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11. 发明申请

US20090134480A1 Semiconductor device and method for manufacturing the same 失效
公开(公告)号：US20090134480A1
公开(公告)日：2009-05-28
申请号：US12320278
申请日：2009-01-22
申请人： Yuuichi Kamimuta , Akira Nishiyama , Yasushi Nakasaki , Tsunehiro Ino , Masato Koyama
发明人： Yuuichi Kamimuta , Akira Nishiyama , Yasushi Nakasaki , Tsunehiro Ino , Masato Koyama
IPC分类号： H01L29/78
CPC分类号： H01L27/11521 , H01L21/28194 , H01L21/28202 , H01L29/4933 , H01L29/4975 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/665 , H01L29/6659 , H01L29/7833
摘要： It is possible to prevent the deterioration of device characteristic as much as possible. A semiconductor device includes: a semiconductor substrate; a gate insulating film provided above the semiconductor substrate and containing a metal, oxygen and an additive element; a gate electrode provided above the gate insulating film; and source/drain regions provided in the semiconductor substrate on both sides of the gate electrode. The additive element is at least one element selected from elements of Group 5, 6, 15, and 16 at a concentration of 0.003 atomic % or more but 3 atomic % or less.

12. 发明申请

US20090072331A1 Semiconductor device and manufacturing method thereof 失效
公开(公告)号：US20090072331A1
公开(公告)日：2009-03-19
申请号：US12232079
申请日：2008-09-10
申请人： Masato Koyama , Reika Ichihara , Yoshinori Tsuchiya , Yuuchi Kamimuta , Akira Nishiyama
发明人： Masato Koyama , Reika Ichihara , Yoshinori Tsuchiya , Yuuchi Kamimuta , Akira Nishiyama
IPC分类号： H01L29/78
CPC分类号： H01L21/823842
摘要： A semiconductor device includes a substrate, a p-channel MIS transistor formed on an n-type well on the substrate, having a first gate dielectric and a first gate electrode formed thereon and formed of a Ta—C alloy wherein a crystal orientation ratio of a TaC (111) face in a film thickness direction [TaC (111) face/{TaC (111) face+TaC (200) face}] is 80% or more, and an n-channel MIS transistor formed on a p-type well on the substrate, having a second gate dielectric and a second gate electrode formed thereon and formed of a Ta—C alloy wherein a crystal orientation ratio of a TaC (111) face in a film thickness direction [TaC (111) face/{TaC (111) face+TaC (200) face}] is 60% or less.

13. 发明授权

US07435655B2 Semiconductor device and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07435655B2
公开(公告)日：2008-10-14
申请号：US11736261
申请日：2007-04-17
申请人： Masato Koyama , Akira Nishiyama , Yuuichi Kamimuta
发明人： Masato Koyama , Akira Nishiyama , Yuuichi Kamimuta
IPC分类号： H01L21/336 , H01L21/3205
CPC分类号： H01L21/823814 , H01L21/823864
摘要： A semiconductor device includes a silicon substrate, a channel region formed in a surface of the silicon substrate, a gate insulating film formed on the channel region, a gate electrode formed on the gate insulating film, first gate side walls formed on the gate insulating film to sandwich the gate electrode in a gate length direction, second gate side walls which sandwich the gate electrode and the first gate side wall, first diffused layers formed on the surface of the silicon substrate to sandwich the channel region, second diffused layers which sandwich the channel region and the first diffused layer and have a larger depth than that of the first diffused layer, and low resistance layers which are formed between the first diffused layer and the second gate side wall and contain nitride, boride or carbide of Ti, Zr, Hf or Ta.
摘要翻译：半导体器件包括硅衬底，形成在硅衬底的表面中的沟道区，形成在沟道区上的栅极绝缘膜，形成在栅极绝缘膜上的栅极，形成在栅极绝缘膜上的第一栅极侧壁夹着栅极电极和第一栅极侧壁的第二栅极侧壁，形成在硅衬底的表面上以夹持沟道区域的第一扩散层，夹着所述栅极电极和第二栅极侧壁的第二扩散层，沟道区域和第一扩散层，并且具有比第一扩散层的深度更大的深度，以及形成在第一扩散层和第二栅极侧壁之间的低电阻层，并且包含Ti，Zr的氮化物，硼化物或碳化物， Hf或Ta。

14. 发明申请

US20080176368A1 Semiconductor Device 有权
标题翻译：半导体器件
公开(公告)号：US20080176368A1
公开(公告)日：2008-07-24
申请号：US11841817
申请日：2007-08-20
申请人： Reika Ichihara , Yoshinori Tsuchiya , Masato Koyama , Akira Nishiyama
发明人： Reika Ichihara , Yoshinori Tsuchiya , Masato Koyama , Akira Nishiyama
IPC分类号： H01L21/8238
CPC分类号： H01L21/823857 , H01L21/823462
摘要： A semiconductor device includes a semiconductor substrate, an nMISFET formed on the substrate, the nMISFET including a first dielectric formed on the substrate and a first metal gate electrode formed on the first dielectric and formed of one metal element selected from Ti, Zr, Hf, Ta, Sc, Y, a lanthanoide and actinide series and of one selected from boride, silicide and germanide compounds of the one metal element, and a pMISFET formed on the substrate, the pMISFET including a second dielectric formed on the substrate and a second metal gate electrode formed on the second dielectric and made of the same material as that of the first metal gate electrode, at least a portion of the second dielectric facing the second metal gate electrode being made of an insulating material different from that of at least a portion of the first dielectric facing the first metal gate electrode.
摘要翻译：半导体器件包括半导体衬底，形成在衬底上的nMISFET，nMISFET包括形成在衬底上的第一电介质和形成在第一电介质上的第一金属栅极，并由选自Ti，Zr，Hf， Ta，Sc，Y，镧系元素和锕系和选自所述一种金属元素的硼化物，硅化物和锗化合物的一种，以及形成在所述衬底上的pMISFET，所述pMISFET包括形成在所述衬底上的第二电介质和第二金属栅电极形成在第二电介质上并由与第一金属栅电极相同的材料制成，第二电介质面向第二金属栅电极的至少一部分由绝缘材料制成，绝缘材料与至少一部分的第一电介质面向第一金属栅电极。

15. 发明授权

US07348644B2 Semiconductor device and method of manufacturing semiconductor device 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07348644B2
公开(公告)日：2008-03-25
申请号：US11407077
申请日：2006-04-20
申请人： Masahiro Koike , Masato Koyama , Tsunehiro Ino , Yuuichi Kamimuta , Akira Takashima , Masamichi Suzuki , Akira Nishiyama
发明人： Masahiro Koike , Masato Koyama , Tsunehiro Ino , Yuuichi Kamimuta , Akira Takashima , Masamichi Suzuki , Akira Nishiyama
IPC分类号： H01L29/94
CPC分类号： H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L29/517 , H01L29/518
摘要： Disclosed is a semiconductor device comprising a substrate, an insulating film formed above the substrate and containing a metal, Si, N and O, the insulating film containing metal-N bonds larger than the sum total of metal-metal bonds and metal-Si bonds, and an electrode formed above the insulating film.
摘要翻译：公开了一种半导体器件，其包括基板，形成在基板上方并且包含金属Si，N和O的绝缘膜，所述绝缘膜含有大于金属 - 金属键和金属-Si键的总和的金属-N键，以及形成在绝缘膜上方的电极。

16. 发明申请

US20070145488A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20070145488A1
公开(公告)日：2007-06-28
申请号：US11461646
申请日：2006-08-01
申请人： Masato Koyama , Reika Ichihara , Yoshinori Tsuchiya , Yuuichi Kamimuta , Akira Nishiyama
发明人： Masato Koyama , Reika Ichihara , Yoshinori Tsuchiya , Yuuichi Kamimuta , Akira Nishiyama
IPC分类号： H01L29/94
CPC分类号： H01L21/823842 , H01L21/823835
摘要： A semiconductor device includes a substrate, a p-channel MIS transistor formed on the substrate, the p-channel MIS transistor having a first gate electrode, and an n-channel MIS transistor formed on the substrate separately from the p-channel MIS transistor, the n-channel MIS transistor having a second gate electrode. Each of the first gate electrode and the second gate electrode is formed of an alloy of Ta and C in which a mole ratio of C to Ta (C/Ta) is from 2 to 4.
摘要翻译：半导体器件包括衬底，形成在衬底上的p沟道MIS晶体管，具有第一栅电极的p沟道MIS晶体管和与p沟道MIS晶体管分开形成在衬底上的n沟道MIS晶体管，该n沟道MIS晶体管具有第二栅电极。第一栅极电极和第二栅极电极由Ta和C的合金形成，其中C与Ta（C / Ta）的摩尔比为2〜4。

17. 发明申请

US20070072374A1 SEMICONDUCTOR DEVICE 失效
公开(公告)号：US20070072374A1
公开(公告)日：2007-03-29
申请号：US11560109
申请日：2006-11-15
申请人： Mizuki ONO , Akira Nishiyama
发明人： Mizuki ONO , Akira Nishiyama
IPC分类号： H01L21/336
CPC分类号： H01L21/28194 , H01L21/28202 , H01L21/823456 , H01L21/823462 , H01L21/823475 , H01L21/823857 , H01L27/088 , H01L27/0922 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/78 , H01L29/785
摘要： A semiconductor device comprises a semiconductor substrate, a first circuit formed on the substrate, and a second circuit connected to the first circuit as an input/output portion thereof and powered by a voltage higher than that for the first circuit, the first circuit including a first and a second field-effect transistor, the first drain region of the first transistor accompanying a first load capacitance, the second drain region of the second transistor accompanying a second load capacitance smaller than the first load capacitance, and the first gate insulation film of the first transistor having an average relative dielectric constant higher than that of the second gate insulation film of the second transistor, thereby realizing a high operation speed.

18. 发明申请

US20060246557A1 Process for preparing optically active 2-[6-(hydroxy-methyl)-1,3-dioxan-4-yl] acetic acid derivatives 审中-公开
标题翻译：光学活性的2- [6-（羟基 - 甲基）-1,3-二恶烷-4-基]乙酸衍生物的制备方法
公开(公告)号：US20060246557A1
公开(公告)日：2006-11-02
申请号：US11477322
申请日：2006-06-30
申请人： Akira Nishiyama , Miho Horikawa , Yoshihiko Yosohara , Noboru Ueyama , Kenji Inoue
发明人： Akira Nishiyama , Miho Horikawa , Yoshihiko Yosohara , Noboru Ueyama , Kenji Inoue
IPC分类号： C12P7/64 , C12P7/62 , C07C51/00
CPC分类号： C07D319/06 , C12P7/42 , C12P17/06
摘要： The present invention is to provide a production technology by which an optically active 2-[6-(hydroxymethyl)-1,3-dioxan-4-yl]acetic acid derivative, which are of value as pharmaceutical intermediates, can be produced from inexpensive and readily available starting materials without using any extraordinary equipment such as an ultra-low-temperature reactor. The present invention is a production process of an optically active 2-[6-(hydroxymethyl)-1,3-dioxan-4-yl]acetic acid derivative which comprises reacting an enolate, prepared by permitting a base or a 0-valent metal to act on an acetic acid ester derivative with (S)-β-hydroxy-γ-butyrolactone at a temperature not lower than −30° C. to give a dihydroxyoxohexanoic acid derivative, treating the same with an acylating agent in the presence of a base to produce a dihydroxyoxohexanoic acid monoacyl derivative, reducing this compound with a microorganism to produce a trihydroxyhexanoic acid monoacyl derivative, treating this compound with an acetal-forming reagent in the presence of an acid catalyst to produce an acyloxy-methyldioxanylacetic acid derivative, and finally, subjecting this compound to solvolysis in the presence of a base.
摘要翻译：本发明提供一种生产技术，通过该技术，可以以廉价的方式生产价值为医药中间体的光学活性的2- [6-（羟甲基）-1,3-二恶烷-4-基]乙酸衍生物和容易获得的起始材料，而不使用任何非常设备，例如超低温反应器。本发明是光学活性的2- [6-（羟甲基）-1,3-二恶烷-4-基]乙酸衍生物的制备方法，该方法包括使通过使碱或0价金属在不低于-30℃的温度下用（S）-β-羟基-γ-丁内酯在乙酸酯衍生物上作用，得到二羟基氧代己酸衍生物，在酰化剂存在下用酰化剂处理制备二羟基氧基己酸单酰基衍生物，用微生物还原该化合物以产生三羟基己酸单酰基衍生物，在酸催化剂存在下用缩醛形成试剂处理该化合物以产生酰氧基 - 甲基二恶烷基乙酸衍生物，最后使该化合物在碱的存在下溶剂解。

19. 发明申请

US20060138554A1 Semiconductor device and fabricating method for the same 失效
公开(公告)号：US20060138554A1
公开(公告)日：2006-06-29
申请号：US11340549
申请日：2006-01-27
申请人： Masato Koyama , Akira Nishiyama
发明人： Masato Koyama , Akira Nishiyama
IPC分类号： H01L29/76
CPC分类号： H01L21/28088 , H01L21/823835 , H01L21/823842 , H01L29/4966 , H01L29/665
摘要： The present invention is intended to provide a semiconductor device having a gate electrode free from increasing of resistance of the gate electrode, from decreasing of capacitance of the insulation film due to depletion, and from penetrating of impurity. The semiconductor device comprises a silicon layer, a gate insulating film formed on the silicon layer, a metal boron compound layer formed on the gate insulating film, and a gate electrode formed on the metal boron compound layer and containing at least silicon.

20. 发明申请

US20050080277A1 Process for preparing optically active 2-[6-(hydroxy-methyl)-1,3-dioxan-4-yl] acetic acid derivatives 失效
标题翻译：光学活性的2- [6-（羟基 - 甲基）-1,3-二恶烷-4-基]乙酸衍生物的制备方法
公开(公告)号：US20050080277A1
公开(公告)日：2005-04-14
申请号：US10048553
申请日：2001-06-05
申请人： Akira Nishiyama , Miho Horikawa , Yoshihiko Yasohara , Noboru Ueyama , Kenji Inoue
发明人： Akira Nishiyama , Miho Horikawa , Yoshihiko Yasohara , Noboru Ueyama , Kenji Inoue
IPC分类号： C07D319/06 , C12P7/42 , C12P17/06
CPC分类号： C07D319/06 , C12P7/42 , C12P17/06
摘要： The present invention is to provide a production technology by which an optically active 2-[6-(hydroxymethyl)-1,3-dioxan-4-yl]acetic acid derivative, which are of value as pharmaceutical intermediates, can be produced from inexpensive and readily available starting materials without using any extraordinary equipment such as an ultra-low-temperature reactor. The present invention is a production process of an optically active 2-[6-(hydroxymethyl)-1,3-dioxan-4-yl]acetic acid derivative which comprises reacting an enolate, prepared by permitting a base or a 0-valent metal to act on an acetic acid ester derivative with (S)-β-hydroxy-γ-butyrolactone at a temperature not lower than −30° C. to give a dihydroxyoxohexanoic acid derivative, treating the same with an acylating agent in the presence of a base to produce a dihydroxyoxohexanoic acid monoacyl derivative, reducing this compound with a microorganism to produce a trihydroxyhexanoic acid monoacyl derivative, treating this compound with an acetal-forming reagent in the presence of an acid catalyst to produce an acyloxymethyldioxanylacetic acid derivative, and finally, subjecting this compound to solvolysis in the presence of a base.
摘要翻译：本发明提供一种生产技术，通过该技术，可以以廉价的方式生产价值为医药中间体的光学活性的2- [6-（羟甲基）-1,3-二恶烷-4-基]乙酸衍生物和容易获得的起始材料，而不使用任何非常设备，例如超低温反应器。本发明是光学活性的2- [6-（羟甲基）-1,3-二恶烷-4-基]乙酸衍生物的制备方法，该方法包括使通过使碱或0价金属在不低于-30℃的温度下用（S）-β-羟基-γ-丁内酯在乙酸酯衍生物上作用，得到二羟基氧代己酸衍生物，在酰化剂存在下用酰化剂处理碱化以制备二羟基氧己基单酰基衍生物，用微生物还原该化合物以产生三羟基己酸单酰基衍生物，在酸催化剂存在下用缩醛形成试剂处理该化合物，得到酰氧基甲基二恶烷基乙酸衍生物，最后，该化合物在碱存在下溶剂解。

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