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11. 发明授权

US07947601B2 Semiconductor devices and methods for forming patterned radiation blocking on a semiconductor device 有权
标题翻译：用于在半导体器件上形成图案化辐射阻挡的半导体器件和方法
公开(公告)号：US07947601B2
公开(公告)日：2011-05-24
申请号：US12410343
申请日：2009-03-24
申请人： Swarnal Borthakur , Marc Sulfridge
发明人： Swarnal Borthakur , Marc Sulfridge
IPC分类号： H01L21/00
CPC分类号： H01L27/14685 , H01L24/05 , H01L24/10 , H01L24/13 , H01L27/14618 , H01L27/14683 , H01L27/1469 , H01L31/02164 , H01L2224/02372 , H01L2224/0401 , H01L2224/05548 , H01L2224/13 , H01L2224/13021 , H01L2224/131 , H01L2924/01029 , H01L2924/12042 , H01L2924/14 , H01L2924/014 , H01L2924/00
摘要： Several embodiments for semiconductor devices and methods for forming semiconductor devices are disclosed herein. One embodiment is directed to a method for manufacturing a microelectronic imager having a die including an image sensor, an integrated circuit electrically coupled to the image sensor, and electrical connectors electrically coupled to the integrated circuit. The method can comprise covering the electrical connectors with a radiation blocking layer and forming apertures aligned with the electrical connectors through a layer of photo-resist on the radiation blocking layer. The radiation blocking layer is not photoreactive such that it cannot be patterned using radiation. The method further includes etching openings in the radiation blocking layer through the apertures of the photo-resist layer.
摘要翻译：本文公开了用于半导体器件的半导体器件的形式和形成方法。一个实施例涉及一种用于制造具有芯片的微电子成像器的方法，所述裸片包括图像传感器，电耦合到图像传感器的集成电路以及电耦合到集成电路的电连接器。该方法可以包括用辐射阻挡层覆盖电连接器，并且通过辐射阻挡层上的光致抗蚀剂层形成与电连接器对准的孔。辐射阻挡层不是光反应的，使得其不能使用辐射进行图案化。该方法还包括通过光致抗蚀剂层的孔蚀刻辐射阻挡层中的开口。

12. 发明授权

US08697473B2 Methods for forming backside illuminated image sensors with front side metal redistribution layers 有权
标题翻译：用前侧金属再分布层形成背面照明图像传感器的方法
公开(公告)号：US08697473B2
公开(公告)日：2014-04-15
申请号：US13112871
申请日：2011-05-20
申请人： Swarnal Borthakur , Kevin W. Hutto , Andrew Perkins , Marc Sulfridge
发明人： Swarnal Borthakur , Kevin W. Hutto , Andrew Perkins , Marc Sulfridge
IPC分类号： H01L21/00 , H01L31/0203 , H01L31/0224 , H01L27/146
CPC分类号： H01L27/14687 , H01L27/14618 , H01L27/14621 , H01L27/14636 , H01L27/1464 , H01L27/14685 , H01L31/0203 , H01L31/022408 , H01L31/20 , H01L2224/13
摘要： Methods for forming backside illuminated (BSI) image sensors having metal redistribution layers (RDL) and solder bumps for high performance connection to external circuitry are provided. In one embodiment, a BSI image sensor with RDL and solder bumps may be formed using a temporary carrier during manufacture that is removed prior to completion of the BSI image sensor. In another embodiment, a BSI image sensor with RDL and solder bumps may be formed using a permanent carrier during manufacture that partially remains in the completed BSI image sensor. A BSI image sensor may be formed before formation of a redistribution layer on the front side of the BSI image sensor. A redistribution layer may, alternatively, be formed on the front side of an image wafer before formation of BSI components such as microlenses and color filters on the back side of the image wafer.
摘要翻译：提供了用于形成具有金属再分布层（RDL）的背面照明（BSI）图像传感器和用于与外部电路的高性能连接的焊料凸块的方法。在一个实施例中，具有RDL和焊料凸块的BSI图像传感器可以在制造期间使用临时载体形成，其在BSI图像传感器完成之前被移除。在另一个实施例中，具有RDL和焊料凸块的BSI图像传感器可以在制造期间使用永久载体形成，其部分保留在完整的BSI图像传感器中。 BSI图像传感器可以在形成BSI图像传感器的前侧上的再分布层之前形成。或者，可以在形成图像晶片的背面上的诸如微透镜和滤色器之类的BSI部件之前，在图像晶片的正面上形成再分布层。

13. 发明申请

US20120200749A1 IMAGERS WITH STRUCTURES FOR NEAR FIELD IMAGING 审中-公开
标题翻译：具有近场成像结构的图像
公开(公告)号：US20120200749A1
公开(公告)日：2012-08-09
申请号：US13188811
申请日：2011-07-22
申请人： Ulrich Boettiger , Swarnal Borthakur , Jeffrey Mackey , Brian Vaartstra , Marc Sulfridge
发明人： Ulrich Boettiger , Swarnal Borthakur , Jeffrey Mackey , Brian Vaartstra , Marc Sulfridge
IPC分类号： H04N9/04
CPC分类号： H04N5/2254 , H01L27/14621 , H01L27/14629 , H04N5/32 , H04N5/359
摘要： An imaging system may include an image sensor configured to image materials at near field imaging ranges from the image sensor. Near field imaging ranges may be on the scale of 1-10 pixel sizes from the image sensor. The materials being imaged may be fluorescent materials that emit radiation at fluorescent wavelengths when the materials are exposed to radiation at excitation wavelengths. The image sensor may include color filter materials that block radiation at excitation wavelengths while transmitting radiation at fluorescent wavelengths. The image sensor may include light guides that reduce cross-talk between pixels and improve localization of emitted radiation, thereby allowing the image sensor to determine which pixel(s) is (are) located beneath the materials being imaged. The light guides may include may include sloped sidewalls and may include reflective sidewalls, which may improve radiation collection (e.g., efficiency) and localization of emitted radiation.
摘要翻译：成像系统可以包括图像传感器，其构造成在来自图像传感器的近场成像范围内成像材料。近场成像范围可以是来自图像传感器的1-10个像素尺寸的尺度。正在成像的材料可以是当材料暴露于激发波长的辐射时以荧光波长发射辐射的荧光材料。图像传感器可以包括在激发波长处阻挡辐射同时传输荧光波长的辐射的滤色器材料。图像传感器可以包括减少像素之间的串扰并且改善发射的辐射的定位的光导，从而允许图像传感器确定位于被成像材料之下的哪个像素。光导可以包括倾斜的侧壁并且可以包括反射侧壁，其可以改进辐射收集（例如，效率）和发射的辐射的定位。

14. 发明申请

US20120193741A1 METHODS FOR FORMING BACKSIDE ILLUMINATED IMAGE SENSORS WITH FRONT SIDE METAL REDISTRIBUTION LAYERS 有权
标题翻译：用于形成具有前侧金属重分布层的背面照明图像传感器的方法
公开(公告)号：US20120193741A1
公开(公告)日：2012-08-02
申请号：US13112871
申请日：2011-05-20
申请人： Swarnal Borthakur , Kevin W. Hutto , Andrew Perkins , Marc Sulfridge
发明人： Swarnal Borthakur , Kevin W. Hutto , Andrew Perkins , Marc Sulfridge
IPC分类号： H01L31/048 , H01L31/18
CPC分类号： H01L27/14687 , H01L27/14618 , H01L27/14621 , H01L27/14636 , H01L27/1464 , H01L27/14685 , H01L31/0203 , H01L31/022408 , H01L31/20 , H01L2224/13
摘要： Methods for forming backside illuminated (BSI) image sensors having metal redistribution layers (RDL) and solder bumps for high performance connection to external circuitry are provided. In one embodiment, a BSI image sensor with RDL and solder bumps may be formed using a temporary carrier during manufacture that is removed prior to completion of the BSI image sensor. In another embodiment, a BSI image sensor with RDL and solder bumps may be formed using a permanent carrier during manufacture that partially remains in the completed BSI image sensor. A BSI image sensor may be formed before formation of a redistribution layer on the front side of the BSI image sensor. A redistribution layer may, alternatively, be formed on the front side of an image wafer before formation of BSI components such as microlenses and color filters on the back side of the image wafer.
摘要翻译：提供了用于形成具有金属再分布层（RDL）的背面照明（BSI）图像传感器和用于与外部电路的高性能连接的焊料凸块的方法。在一个实施例中，具有RDL和焊料凸块的BSI图像传感器可以在制造期间使用临时载体形成，其在BSI图像传感器完成之前被移除。在另一个实施例中，具有RDL和焊料凸块的BSI图像传感器可以在制造期间使用永久载体形成，其部分保留在完整的BSI图像传感器中。 BSI图像传感器可以在形成BSI图像传感器的前侧上的再分布层之前形成。或者，在形成图像晶片的背侧上的诸如微透镜和滤色器之类的BSI部件之前，可以在图像晶片的正面上形成再分布层。

15. 发明申请

US20100244172A1 SEMICONDUCTOR DEVICES AND METHODS FOR FORMING PATTERNED RADIATION BLOCKING ON A SEMICONDUCTOR DEVICE 有权
标题翻译：用于在半导体器件上形成图案化辐射阻挡的半导体器件及方法
公开(公告)号：US20100244172A1
公开(公告)日：2010-09-30
申请号：US12410343
申请日：2009-03-24
申请人： Swarnal Borthakur , Marc Sulfridge
发明人： Swarnal Borthakur , Marc Sulfridge
IPC分类号： H01L31/02 , H01L21/768
CPC分类号： H01L27/14685 , H01L24/05 , H01L24/10 , H01L24/13 , H01L27/14618 , H01L27/14683 , H01L27/1469 , H01L31/02164 , H01L2224/02372 , H01L2224/0401 , H01L2224/05548 , H01L2224/13 , H01L2224/13021 , H01L2224/131 , H01L2924/01029 , H01L2924/12042 , H01L2924/14 , H01L2924/014 , H01L2924/00
摘要： Several embodiments for semiconductor devices and methods for forming semiconductor devices are disclosed herein. One embodiment is directed to a method for manufacturing a microelectronic imager having a die including an image sensor, an integrated circuit electrically coupled to the image sensor, and electrical connectors electrically coupled to the integrated circuit. The method can comprise covering the electrical connectors with a radiation blocking layer and forming apertures aligned with the electrical connectors through a layer of photo-resist on the radiation blocking layer. The radiation blocking layer is not photoreactive such that it cannot be patterned using radiation. The method further includes etching openings in the radiation blocking layer through the apertures of the photo-resist layer.
摘要翻译：本文公开了用于半导体器件的半导体器件的形式和形成方法。一个实施例涉及一种用于制造具有芯片的微电子成像器的方法，所述裸片包括图像传感器，电耦合到图像传感器的集成电路以及电耦合到集成电路的电连接器。该方法可以包括用辐射阻挡层覆盖电连接器，并且通过辐射阻挡层上的光致抗蚀剂层形成与电连接器对准的孔。辐射阻挡层不是光反应的，使得其不能使用辐射进行图案化。该方法还包括通过光致抗蚀剂层的孔蚀刻辐射阻挡层中的开口。

16. 发明申请

US20120194669A1 FLUID SAMPLE ANALYSIS SYSTEMS 有权
标题翻译：流体样品分析系统
公开(公告)号：US20120194669A1
公开(公告)日：2012-08-02
申请号：US13105232
申请日：2011-05-11
申请人： Kevin W. Hutto , Swarnal Borthakur
发明人： Kevin W. Hutto , Swarnal Borthakur
IPC分类号： H04N7/18 , B32B38/08 , B32B37/22 , B32B38/10
CPC分类号： G01N21/6458 , G01N15/1484 , G01N21/05 , G01N21/6454 , G01N2015/144 , G01N2021/0346 , G01N2021/6478
摘要： A fluid sample analyzing system may be formed from an image sensor integrated circuit substrate. A glass wafer may be used to cover a wafer of image sensors. The glass wafer and the image sensor wafer may be attached using oxide bonding. Fluid channels may be formed in a layer that is interposed between the image sensor wafer and the glass wafer. The layer may be deposited on the image sensor wafer and the glass wafer prior to oxide bonding. A spacer may be used to deliver the fluid channel layer to the image sensor wafer before the glass wafer is bonded to the image sensor wafer. The spacer may be formed from a silicon wafer. The silicon wafer may be bonded to the image sensor wafer and thinned, leaving a thin spacer wafer layer on the image sensor wafer in which fluid channels may be formed.
摘要翻译：流体样品分析系统可以由图像传感器集成电路基板形成。可以使用玻璃晶片来覆盖图像传感器的晶片。可以使用氧化物结合来附接玻璃晶片和图像传感器晶片。流体通道可以形成在介于图像传感器晶片和玻璃晶片之间的层中。该层可以在氧化物粘合之前沉积在图像传感器晶片和玻璃晶片上。在将玻璃晶片接合到图像传感器晶片之前，可以使用间隔物将流体通道层传送到图像传感器晶片。间隔物可以由硅晶片形成。硅晶片可以结合到图像传感器晶片并变薄，在可以形成流体通道的图像传感器晶片上留下薄的间隔晶片层。

17. 发明授权

US08211787B2 Semiconductor processing methods 有权
标题翻译：半导体加工方法
公开(公告)号：US08211787B2
公开(公告)日：2012-07-03
申请号：US12959678
申请日：2010-12-03
申请人： Swarnal Borthakur , Richard L. Stocks
发明人： Swarnal Borthakur , Richard L. Stocks
IPC分类号： H01L21/768
CPC分类号： H01L27/14683 , H01L27/14618 , H01L27/14625 , H01L2924/0002 , H01L2924/00
摘要： Some embodiments include methods of forming semiconductor constructions in which a semiconductor material sidewall is along an opening, a protective organic material is over at least one semiconductor material surface, and the semiconductor material sidewall and protective organic material are both exposed to an etch utilizing at least one fluorine-containing composition. The etch is selective for the semiconductor material relative to the organic material, and reduces sharpness of at least one projection along the semiconductor material sidewall. In some embodiments, the opening is a through wafer opening, and subsequent processing forms one or more materials within such through wafer opening to form a through wafer interconnect. In some embodiments, the opening extends to a sensor array, and the protective organic material is comprised by a microlens system over the sensor array. Subsequent processing may form a macrolens structure across the opening.
摘要翻译：一些实施例包括形成半导体结构的方法，其中半导体材料侧壁沿着开口，保护性有机材料在至少一个半导体材料表面上，并且半导体材料侧壁和保护性有机材料都暴露于至少利用蚀刻一种含氟组合物。蚀刻对于半导体材料相对于有机材料是选择性的，并且降低沿着半导体材料侧壁的至少一个突起的锐度。在一些实施例中，开口是贯穿晶片开口，随后的处理在该贯穿晶片开口内形成一个或多个材料以形成贯穿晶片互连。在一些实施例中，开口延伸到传感器阵列，并且保护性有机材料由传感器阵列上的微透镜系统包括。随后的处理可以在整个开口处形成一个宏观结构。

18. 发明申请

US20110230007A1 SEMICONDUCTOR FABRICATION METHOD AND SYSTEM 有权
标题翻译：半导体制造方法与系统
公开(公告)号：US20110230007A1
公开(公告)日：2011-09-22
申请号：US13151478
申请日：2011-06-02
申请人： Swarnal Borthakur
发明人： Swarnal Borthakur
IPC分类号： H01L31/18 , H01L21/283
CPC分类号： H01L27/14683 , H01L23/10 , H01L23/3171 , H01L23/3192 , H01L23/481 , H01L24/13 , H01L24/94 , H01L27/14618 , H01L2224/0401 , H01L2224/05008 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05164 , H01L2224/05166 , H01L2224/05181 , H01L2224/05571 , H01L2224/05644 , H01L2224/13022 , H01L2924/0002 , H01L2924/01078 , H01L2924/01079 , H01L2924/14 , H01L2924/16235 , H01L2924/19042 , H01L2924/00012 , H01L2224/05552 , H01L2924/00014 , H01L2924/01028 , H01L2924/013
摘要： A method for manufacturing a semiconductor device is disclosed. In one embodiment, the method includes attaching a carrier to a substrate including a via to form a pressurized sealed cavity between the carrier and the substrate. The method may also include thinning the substrate attached to the carrier and forming a redistribution layer on the thinned substrate in electrical communication with the via, the redistribution layer including a conductive layer formed through atmospheric pressure chemical vapor deposition. Additional methods, devices, and systems are devices, systems, and methods are also disclosed.
摘要翻译：公开了一种制造半导体器件的方法。在一个实施例中，该方法包括将载体附接到包括通孔的基底，以在载体和基底之间形成加压的密封空腔。该方法还可以包括使连接到载体的衬底变薄，并在与通孔电连通的薄化衬底上形成再分布层，再分布层包括通过大气压化学气相沉积形成的导电层。还公开了附加的方法，设备和系统的装置，系统和方法。

19. 发明授权

US07767544B2 Semiconductor fabrication method and system 有权
标题翻译：半导体制造方法和系统
公开(公告)号：US07767544B2
公开(公告)日：2010-08-03
申请号：US11786609
申请日：2007-04-12
申请人： Swarnal Borthakur
发明人： Swarnal Borthakur
IPC分类号： H01L21/30 , H01L21/46 , H01L21/50 , H01L21/48 , H01L21/44
CPC分类号： H01L27/14683 , H01L23/10 , H01L23/3171 , H01L23/3192 , H01L23/481 , H01L24/13 , H01L24/94 , H01L27/14618 , H01L2224/0401 , H01L2224/05008 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05164 , H01L2224/05166 , H01L2224/05181 , H01L2224/05571 , H01L2224/05644 , H01L2224/13022 , H01L2924/0002 , H01L2924/01078 , H01L2924/01079 , H01L2924/14 , H01L2924/16235 , H01L2924/19042 , H01L2924/00012 , H01L2224/05552 , H01L2924/00014 , H01L2924/01028 , H01L2924/013
摘要： Embodiments of the present invention are generally directed to a method for manufacturing a semiconductor device. In one embodiment, the method includes providing a substrate that includes a via or interconnect. In this embodiment, the method also includes forming a sealed array, in which forming such an array includes attaching a carrier to a first surface of the substrate to form a sealed cavity between the carrier and the substrate. Further, the method of this embodiment also includes forming a redistribution layer on the sealed array over a second surface of the substrate. Devices and systems having a carrier attached to a substrate are also disclosed.
摘要翻译：本发明的实施例一般涉及半导体器件的制造方法。在一个实施例中，该方法包括提供包括通孔或互连的衬底。在该实施例中，该方法还包括形成密封阵列，其中形成这样的阵列包括将载体附接到基板的第一表面以在载体和基板之间形成密封空腔。此外，本实施例的方法还包括在衬底的第二表面上的密封阵列上形成再分布层。还公开了具有附着到基底的载体的装置和系统。

20. 发明授权

US07629249B2 Microfeature workpieces having conductive interconnect structures formed by chemically reactive processes, and associated systems and methods 有权
标题翻译：具有通过化学反应过程形成的导电互连结构的微型工件以及相关的系统和方法
公开(公告)号：US07629249B2
公开(公告)日：2009-12-08
申请号：US11511690
申请日：2006-08-28
申请人： Swarnal Borthakur
发明人： Swarnal Borthakur
IPC分类号： H01L21/4763
CPC分类号： H01L21/76898 , H01L21/76846 , H01L21/76856 , H01L21/76868 , H01L24/14 , H01L25/0657 , H01L2224/05001 , H01L2224/05009 , H01L2224/05025 , H01L2224/05147 , H01L2224/05155 , H01L2224/05181 , H01L2224/05184 , H01L2224/0557 , H01L2224/05647 , H01L2224/13025 , H01L2224/16 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2924/14 , H01L2924/00 , H01L2924/00014
摘要： Microfeature workpieces having conductive vias formed by chemically reactive processes, and associated systems and methods are disclosed. A method in accordance with one embodiment includes disposing a conductive lining on walls of a via in a microfeature workpiece, so that a space is located between opposing portions of the lining facing toward each other from opposing portions of the wall. The method can further include chemically reacting the lining with a reactive material to form a chemical compound from a constituent of the reactive material and a constituent of the lining. The method can still further include at least partially filling the space with the compound. In particular embodiments, the conductive lining includes copper, the reactive material includes sulfur hexafluoride, and the chemical compound that at least partially fills the space in the via includes copper sulfide.
摘要翻译：公开了具有通过化学反应过程形成的导电通孔的微型工件，以及相关联的系统和方法。根据一个实施例的方法包括在微特征工件中在通孔的壁上布置导电衬里，使得空间位于相对于壁的相对部分彼此面对的相对部分之间。该方法还可以包括使衬里与反应性材料发生化学反应以从反应性材料的组分和衬里的成分形成化学化合物。该方法还可以进一步包括至少部分地填充该化合物的空间。在具体实施方案中，导电衬里包括铜，反应性材料包括六氟化硫，并且至少部分填充通孔中的空间的化合物包括硫化铜。

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