专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明申请

US20080282982A1 APPARATUS AND METHOD FOR DEPOSITION OVER LARGE AREA SUBSTRATES 审中-公开
标题翻译：大面积沉积物沉积的装置和方法
公开(公告)号：US20080282982A1
公开(公告)日：2008-11-20
申请号：US12039613
申请日：2008-02-28
申请人： John M. White , Sanjay Yadav , Qunhua Wang , Soo Young Choi , Weijie Wang
发明人： John M. White , Sanjay Yadav , Qunhua Wang , Soo Young Choi , Weijie Wang
IPC分类号： C23C16/50
CPC分类号： C23C16/4485 , C23C16/509 , H01J37/321 , H01J37/32449
摘要： The present invention generally relates to an inductively coupled plasma apparatus. When depositing utilizing a plasma generated from a showerhead, the plasma may not be evenly distributed to the edge of the substrate. By inductively coupling plasma to the chamber in an area corresponding to the chamber walls, the plasma distribution within the chamber may be evenly distributed and deposition upon the substrate may be substantially even. By vaporizing the processing gas prior to entry into the processing chamber, the plasma may also be even and thus contribute to an even deposition on the substrate.
摘要翻译：本发明一般涉及电感耦合等离子体装置。当利用从喷头产生的等离子体进行沉积时，等离子体可能不均匀地分布到基板的边缘。通过在对应于室壁的区域中将等离子体电感耦合到腔室，室内的等离子体分布可以均匀分布，并且在衬底上的沉积可以基本上均匀。通过在进入处理室之前汽化处理气体，等离子体也可以是均匀的并且因此有助于在衬底上的均匀沉积。

12. 发明申请

US20120009356A1 CONTAMINATION REDUCING LINER FOR INDUCTIVELY COUPLED CHAMBER 审中-公开
标题翻译：污染减少衬板用于电感耦合室
公开(公告)号：US20120009356A1
公开(公告)日：2012-01-12
申请号：US13238729
申请日：2011-09-21
申请人： Soo Young Choi , Qunhua Wang
发明人： Soo Young Choi , Qunhua Wang
IPC分类号： C23C16/505 , H05H1/24
CPC分类号： C23C16/4404
摘要： A method and apparatus for depositing a film through a plasma enhance chemical vapor deposition process is provided. In one embodiment, an apparatus includes a processing chamber having a coil disposed in the chamber and routed proximate the chamber wall. A liner is disposed over the coil and is protected by a coating of a material, wherein the coating of material has a film property similar to the liner. In one embodiment, the liner is a silicon containing material and is protected by the coating of the material. Thus, in the event that some of the protective coating of material is inadvertently sputtered, the sputter material is not a source of contamination if deposited on the substrate along with the deposited deposition film on the substrate.
摘要翻译：提供了一种通过等离子体沉积膜的方法和装置，提高了化学气相沉积工艺。在一个实施例中，一种设备包括处理室，其具有设置在室中的线圈并且靠近室壁布置。衬套设置在线圈上方并被材料涂层保护，其中材料涂层具有类似于衬垫的膜性质。在一个实施例中，衬垫是含硅材料，并且被材料的涂层保护。因此，在材料的一些保护涂层被无意中溅射的情况下，如果沉积在衬底上并且沉积在衬底上的沉积膜，则溅射材料不是污染源。

13. 发明申请

US20050251990A1 Plasma uniformity control by gas diffuser hole design 有权
标题翻译：通过气体扩散器孔设计的等离子体均匀性控制
公开(公告)号：US20050251990A1
公开(公告)日：2005-11-17
申请号：US10889683
申请日：2004-07-12
申请人： Soo Young Choi , John White , Qunhua Wang , Li Hou , Ki Kim , Shinichi Kurita , Tae Won , Suhail Anwar , Beom Park , Robin Tiner
发明人： Soo Young Choi , John White , Qunhua Wang , Li Hou , Ki Kim , Shinichi Kurita , Tae Won , Suhail Anwar , Beom Park , Robin Tiner
IPC分类号： H01L21/02 , C23C16/00 , C23C16/34 , C23C16/44 , C23C16/455 , C23C16/505 , C23C16/509 , C23F1/00 , H01J37/32 , H01L21/205
CPC分类号： H01J37/3244 , C23C16/345 , C23C16/455 , C23C16/45565 , C23C16/5096 , H01J37/32082 , H01J37/32091 , H01J37/32541 , H01J37/32596 , H01J2237/327 , H01J2237/3321 , H01J2237/3323 , H01J2237/3325 , Y10T29/49885 , Y10T29/49996
摘要： Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.
摘要翻译：提供了用于在处理室中分配气体的气体扩散板的实施例。气体分配板包括具有上游侧和下游侧的扩散板，以及在扩散板的上游侧和下游侧之间通过的多个气体通路。气体通道包括在下游侧的中空阴极腔，以增强等离子体电离。延伸到下游端的气体通道的空心阴极腔的深度，直径，表面积和密度可以从扩散板的中心到边缘逐渐增加，以改善衬底上的膜厚度和性能均匀性。从扩散板的中心到边缘的直径，深度和表面积的增加可以通过向下游侧弯曲扩散板，然后在凸出的下游侧加工出来。扩散板的弯曲可以通过热处理或真空工艺来实现。从扩散板的中心到边缘的直径，深度和表面积的增加也可以用计算机数字控制加工。具有从扩散板的中心到边缘的中空阴极腔的直径逐渐增加，深度和表面积逐渐增大的扩散板已被证明可以产生改善的膜厚度和膜性质的均匀性。

14. 发明申请

US20120027918A1 SHOWERHEAD SUPPORT STRUCTURE FOR IMPROVED GAS FLOW 有权
标题翻译：改善气体流量的淋浴支撑结构
公开(公告)号：US20120027918A1
公开(公告)日：2012-02-02
申请号：US13163241
申请日：2011-06-17
申请人： Robin L. Tiner , Soo Young Choi , Qunhua Wang , Jrjyan Jerry Chen
发明人： Robin L. Tiner , Soo Young Choi , Qunhua Wang , Jrjyan Jerry Chen
IPC分类号： C23C16/455 , B05D5/12
CPC分类号： B05B1/005 , C23C16/45565 , H01J37/3244
摘要： Embodiments of the present invention generally provide apparatus and methods for supporting a gas distribution showerhead in a processing chamber. In one embodiment, a gas distribution showerhead for a vacuum chamber is provided. The gas distribution showerhead comprises a body having a first side and a second side opposite the first side, and a plurality of gas passages formed through the body, the gas passages comprising a first bore formed in the first side that is fluidly coupled to a second bore formed in the second side by a restricting orifice, and a suspension feature formed in the first bore of at least one of the gas passages.
摘要翻译：本发明的实施例通常提供用于在处理室中支撑气体分配喷头的装置和方法。在一个实施例中，提供了一种用于真空室的气体分配喷头。所述气体分配喷头包括具有第一侧和与所述第一侧相对的第二侧的主体和穿过所述主体形成的多个气体通道，所述气体通道包括形成在所述第一侧中的第一孔，所述第一孔流体地联接到第二侧通过限制孔形成在第二侧中的孔，以及形成在至少一个气体通道的第一孔中的悬挂特征。

15. 发明申请

US20080118663A1 CONTAMINATION REDUCING LINER FOR INDUCTIVELY COUPLED CHAMBER 审中-公开
标题翻译：污染减少衬板用于电感耦合室
公开(公告)号：US20080118663A1
公开(公告)日：2008-05-22
申请号：US11866490
申请日：2007-10-03
申请人： Soo Young Choi , Qunhua Wang
发明人： Soo Young Choi , Qunhua Wang
IPC分类号： C23C16/00
CPC分类号： C23C16/4404
摘要： A method and apparatus for depositing a film through a plasma enhance chemical vapor deposition process is provided. In one embodiment, an apparatus includes a processing chamber having a coil disposed in the chamber and routed proximate the chamber wall. A liner is disposed over the coil and is protected by a coating of a material, wherein the coating of material has a film property similar to the liner. In one embodiment, the liner is a silicon containing material and is protected by the coating of the material. Thus, in the event that some of the protective coating of material is inadvertently sputtered, the sputter material is not a source of contamination if deposited on the substrate along with the deposited deposition film on the substrate.
摘要翻译：提供了一种通过等离子体沉积膜的方法和装置，提高了化学气相沉积工艺。在一个实施例中，一种设备包括处理室，其具有设置在室中的线圈并且靠近室壁布置。衬套设置在线圈上方并被材料涂层保护，其中材料涂层具有类似于衬垫的膜性质。在一个实施例中，衬垫是含硅材料，并且被材料的涂层保护。因此，在材料的一些保护涂层被无意中溅射的情况下，如果沉积在衬底上并且沉积在衬底上的沉积膜，则溅射材料不是污染源。

16. 发明授权

US08721791B2 Showerhead support structure for improved gas flow 有权
标题翻译：喷头支撑结构，用于改善气流
公开(公告)号：US08721791B2
公开(公告)日：2014-05-13
申请号：US13163241
申请日：2011-06-17
申请人： Robin L. Tiner , Soo Young Choi , Qunhua Wang , Jrjyan Jerry Chen
发明人： Robin L. Tiner , Soo Young Choi , Qunhua Wang , Jrjyan Jerry Chen
IPC分类号： C23C16/455 , H01J37/32
CPC分类号： B05B1/005 , C23C16/45565 , H01J37/3244
摘要： Embodiments of the present invention generally provide apparatus and methods for supporting a gas distribution showerhead in a processing chamber. In one embodiment, a gas distribution showerhead for a vacuum chamber is provided. The gas distribution showerhead comprises a body having a first side and a second side opposite the first side, and a plurality of gas passages formed through the body, the gas passages comprising a first bore formed in the first side that is fluidly coupled to a second bore formed in the second side by a restricting orifice, and a suspension feature formed in the first bore of at least one of the gas passages.
摘要翻译：本发明的实施例通常提供用于在处理室中支撑气体分配喷头的装置和方法。在一个实施例中，提供了一种用于真空室的气体分配喷头。所述气体分配喷头包括具有第一侧和与所述第一侧相对的第二侧的主体和穿过所述主体形成的多个气体通道，所述气体通道包括形成在所述第一侧中的第一孔，所述第一孔流体地联接到第二侧通过限制孔形成在第二侧中的孔，以及形成在至少一个气体通道的第一孔中的悬挂特征。

17. 发明申请

US20080292811A1 CHAMBER IDLE PROCESS FOR IMPROVED REPEATABILITY OF FILMS 审中-公开
标题翻译：改进膜片可重复性的室内空白过程
公开(公告)号：US20080292811A1
公开(公告)日：2008-11-27
申请号：US11753571
申请日：2007-05-25
申请人： YOUNG-JIN CHOI , Soo Young Choi , Qunhua Wang , Weijie Wang
发明人： YOUNG-JIN CHOI , Soo Young Choi , Qunhua Wang , Weijie Wang
IPC分类号： C23C16/00 , H05H1/24
CPC分类号： C23C16/54 , C23C16/4401 , H01J37/32458
摘要： Methods and apparatus for improving the substrate-to-substrate uniformity of silicon-containing films deposited by vapor deposition of precursors vaporized from a liquid source on substrates in a chamber are provided. The methods include exposing a chamber to a processing step at a predetermined time that is after one substrate is processed in the chamber and is before the next substrate is processed in the chamber. In one aspect, the processing step includes introducing a flow of a silicon-containing precursor into the chamber for a period of time. In another aspect, the processing step includes exposing the chamber to a gas in the presence or absence of a plasma for a period of time.
摘要翻译：提供了用于改善通过气相沉积从液体源在室中的基板上蒸发的前体沉积的含硅膜的基板到基板均匀性的方法和装置。所述方法包括在室中处理一个衬底之后的预定时间并且在腔室中处理下一个衬底之前将腔室暴露于处理步骤。在一个方面，处理步骤包括将含硅前体的流动引入室中一段时间。在另一方面，所述处理步骤包括在存在或不存在等离子体的情况下将所述室暴露于气体一段时间。

18. 发明授权

US07501161B2 Methods and apparatus for reducing arcing during plasma processing 失效
标题翻译：在等离子体处理期间减少电弧的方法和装置
公开(公告)号：US07501161B2
公开(公告)日：2009-03-10
申请号：US10858267
申请日：2004-06-01
申请人： Li Hou , Qunhua Wang , Edwin Sum , John M. White
发明人： Li Hou , Qunhua Wang , Edwin Sum , John M. White
IPC分类号： H05H1/24 , C23C16/50
CPC分类号： H01L21/67069 , C23C16/4585 , H01J37/32623
摘要： In a first aspect, a method is provided for use during plasma processing. The first method includes the steps of (1) placing a substrate on a substrate holder of a plasma chamber; (2) positioning a cover frame adjacent and below a perimeter of the substrate; and (3) employing the cover frame to reduce arcing during plasma processing within the plasma chamber. Numerous other aspects are provided.
摘要翻译：在第一方面，提供了一种在等离子体处理期间使用的方法。第一种方法包括以下步骤：（1）将衬底放置在等离子体室的衬底保持器上; （2）将盖框架定位在所述基板的周边附近和下方; 和（3）采用盖框架来减小等离子体室内的等离子体处理期间的电弧。提供了许多其他方面。

19. 发明申请

US20130004681A1 MINI BLOCKER PLATE WITH STANDOFF SPACERS 审中-公开
标题翻译：迷你防撞板与标准间隔
公开(公告)号：US20130004681A1
公开(公告)日：2013-01-03
申请号：US13174690
申请日：2011-06-30
申请人： Alan Tso , Jeonghoon Oh , Yi Zheng , Tom K. Cho , Zheng Yuan , Lin Zhang , Qunhua Wang , Robin L. Tiner
发明人： Alan Tso , Jeonghoon Oh , Yi Zheng , Tom K. Cho , Zheng Yuan , Lin Zhang , Qunhua Wang , Robin L. Tiner
IPC分类号： C23C16/50 , F24H9/12
CPC分类号： C23C16/45565
摘要： Embodiments of the present invention provide a plasma processing chamber having a mini blocker plate for delivering processing gas to a processing chamber and methods to use the mini blocker plate to improve uniformity. The blocker plate assembly comprising a mini blocker plate having a plurality of through holes, and two or more standoff spacers configured to position the mini blocker plate at a distance away from a blocker plate.
摘要翻译：本发明的实施例提供了一种等离子体处理室，其具有用于将处理气体输送到处理室的微型封隔板以及使用迷你封隔板来提高均匀性的方法。阻挡板组件包括具有多个通孔的迷你阻塞板，以及两个或更多个支架间隔件，其构造成将迷你阻挡板定位成远离阻挡板。

20. 发明申请

US20060228490A1 Gas distribution uniformity improvement by baffle plate with multi-size holes for large size PECVD systems 审中-公开
标题翻译：用于大尺寸PECVD系统的具有多尺寸孔的挡板的气体分布均匀性改善
公开(公告)号：US20060228490A1
公开(公告)日：2006-10-12
申请号：US11101305
申请日：2005-04-07
申请人： Qunhua Wang , Li Hou , Sanjay Yadav , Gaku Furuta , Kenji Omori , Soo Choi , John White
发明人： Qunhua Wang , Li Hou , Sanjay Yadav , Gaku Furuta , Kenji Omori , Soo Choi , John White
IPC分类号： C23F1/00 , B01J19/08 , C23C16/00 , H01L21/306
CPC分类号： H01J37/3244 , C23C16/45565 , C23F4/00 , H01J37/32449
摘要： Embodiments of a gas distribution plate for distributing gas in a processing chamber for large area substrates are provided. The embodiments describe a gas distribution plate assembly for a plasma processing chamber having a cover plate comprises a diffuser plate having an upstream side, a downstream side facing a processing region, and a plurality of gas passages formed through the diffuser plate, and a baffle plate, placed between the cover plate of the process chamber and the diffuser plate, having a plurality of holes extending from the upper surface to the lower surface of the baffle plate, wherein the plurality of holes have at least two sizes. The small pinholes of the baffle plate are used to allow sufficient pass-through of gas mixture, while the large holes of the baffle plate are used to improve the process uniformity across the substrate.
摘要翻译：提供了用于在大面积基板的处理室中分配气体的气体分配板的实施例。实施方式描述了一种用于等离子体处理室的气体分配板组件，其具有盖板，该盖板包括具有上游侧，面向加工区域的下游侧和通过扩散板形成的多个气体通道的扩散板，以及挡板，放置在处理室的盖板和扩散板之间，具有从挡板的上表面延伸到下表面的多个孔，其中多个孔具有至少两个尺寸。挡板的小针孔用于允许气体混合物的充分通过，而挡板的大孔用于改善基板上的工艺均匀性。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式