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11. 发明申请

US20120295397A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20120295397A1
公开(公告)日：2012-11-22
申请号：US13467493
申请日：2012-05-09
申请人： Junichi KOEZUKA , Yuhei SATO , Shunpei YAMAZAKI
发明人： Junichi KOEZUKA , Yuhei SATO , Shunpei YAMAZAKI
IPC分类号： H01L21/38 , H01L21/42
CPC分类号： H01L29/78693
摘要： Stable electrical characteristics and high reliability are provided to a semiconductor device including an oxide semiconductor. In a process of manufacturing a transistor including an oxide semiconductor film, an amorphous oxide semiconductor film is formed, and oxygen is added to the amorphous oxide semiconductor film, so that an amorphous oxide semiconductor film containing excess oxygen is formed. Then, an aluminum oxide film is formed over the amorphous oxide semiconductor film, and heat treatment is performed thereon to crystallize at least part of the amorphous oxide semiconductor film, so that a crystalline oxide semiconductor film is formed.
摘要翻译：将稳定的电特性和高可靠性提供给包括氧化物半导体的半导体器件。在制造包括氧化物半导体膜的晶体管的工艺中，形成非晶氧化物半导体膜，并且向非晶氧化物半导体膜添加氧，从而形成含有过量氧的非晶氧化物半导体膜。然后，在无定形氧化物半导体膜上形成氧化铝膜，并对其进行热处理，使非晶氧化物半导体膜的至少一部分结晶，形成结晶性氧化物半导体膜。

12. 发明申请

US20120276694A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US20120276694A1
公开(公告)日：2012-11-01
申请号：US13453118
申请日：2012-04-23
申请人： Junichi KOEZUKA , Naoto YAMADE , Yuhei SATO , Yutaka OKAZAKI , Shunpei YAMAZAKI
发明人： Junichi KOEZUKA , Naoto YAMADE , Yuhei SATO , Yutaka OKAZAKI , Shunpei YAMAZAKI
IPC分类号： H01L21/336
CPC分类号： H01L27/1274 , H01L21/02565 , H01L21/02609 , H01L21/02667 , H01L21/383 , H01L21/44 , H01L21/477 , H01L27/1225 , H01L29/66742 , H01L29/66969 , H01L29/78606 , H01L29/7869 , H01L29/78696
摘要： A semiconductor device using an oxide semiconductor is provided with stable electric characteristics to improve the reliability. In a manufacturing process of a transistor including an oxide semiconductor film, an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a first crystalline oxide semiconductor film) is formed; oxygen is added to the oxide semiconductor film to amorphize at least part of the oxide semiconductor film, so that an amorphous oxide semiconductor film containing an excess of oxygen is formed; an aluminum oxide film is formed over the amorphous oxide semiconductor film; and heat treatment is performed thereon to crystallize at least part of the amorphous oxide semiconductor film, so that an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a second crystalline oxide semiconductor film) is formed.
摘要翻译：使用氧化物半导体的半导体器件具有稳定的电特性以提高可靠性。在包括氧化物半导体膜的晶体管的制造工艺中，形成含有基本上垂直于其顶表面的c轴的晶体（也称为第一晶体氧化物半导体膜）的氧化物半导体膜; 氧化物被添加到氧化物半导体膜中以使至少部分氧化物半导体膜非晶化，从而形成含有过量氧的非晶氧化物半导体膜; 在非晶氧化物半导体膜上形成氧化铝膜; 在其上进行热处理以使非晶氧化物半导体膜的至少一部分结晶，使得含有具有基本上垂直于其顶表面的c轴的晶体的氧化物半导体膜（也称为第二结晶氧化物半导体膜）形成了。

13. 发明申请

US20110147738A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110147738A1
公开(公告)日：2011-06-23
申请号：US12968338
申请日：2010-12-15
申请人： Shunpei YAMAZAKI , Junichi KOEZUKA
发明人： Shunpei YAMAZAKI , Junichi KOEZUKA
IPC分类号： H01L29/12 , H01L21/36
CPC分类号： H01L29/7869 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L21/425 , H01L21/426 , H01L21/823418 , H01L29/24 , H01L29/36 , H01L29/66969
摘要： A transistor including an oxide semiconductor, which has good on-state characteristics, and a high-performance semiconductor device including a transistor capable of high-speed response and high-speed operation. In the transistor including an oxide semiconductor, oxygen-defect-inducing factors are introduced (added) into an oxide semiconductor layer, whereby the resistance of a source and drain regions are selectively reduced. Oxygen-defect-inducing factors are introduced into the oxide semiconductor layer, whereby oxygen defects serving as donors can be effectively formed in the oxide semiconductor layer. The introduced oxygen-defect-inducing factors are one or more selected from titanium, tungsten, and molybdenum, and are introduced by an ion implantation method.
摘要翻译：包括具有良好导通状态特性的氧化物半导体的晶体管和包括能够进行高速响应和高速操作的晶体管的高性能半导体器件。在包括氧化物半导体的晶体管中，将氧缺陷诱导因子引入（添加）到氧化物半导体层中，由此选择性地降低源区和漏区的电阻。将氧缺陷诱导因子引入到氧化物半导体层中，由此可以在氧化物半导体层中有效地形成作为供体的氧缺陷。引入的氧缺陷诱导因子是选自钛，钨和钼中的一种或多种，并且通过离子注入法引入。

14. 发明申请

US20080188050A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080188050A1
公开(公告)日：2008-08-07
申请号：US12059652
申请日：2008-03-31
申请人： Keiichi SEKIGUCHI , Junichi KOEZUKA , Yasuyuki ARAI , Shunpei YAMAZAKI
发明人： Keiichi SEKIGUCHI , Junichi KOEZUKA , Yasuyuki ARAI , Shunpei YAMAZAKI
IPC分类号： H01L21/336
CPC分类号： H01L27/1214 , H01L27/1203 , H01L27/127 , H01L29/78624 , H01L29/78645 , H01L29/78675 , H01L29/78696 , H01L2224/05001 , H01L2224/05008 , H01L2224/05024 , H01L2224/05548 , H01L2224/05569 , H01L2224/05572 , H01L2224/16225 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014 , H01L2224/05599 , H01L2224/05099
摘要： The present invention provides a method for manufacturing a semiconductor device, by which a transistor including an active layer, a gate insulating film in contact with the active layer, and a gate electrode overlapping the active layer with the gate insulating film therebetween is provided; an impurity is added to a part of a first region overlapped with the gate electrode with the gate insulating film therebetween in the active layer and a second region but the first region in the active layer by adding the impurity to the active layer from one oblique direction; and the second region is situated in the one direction relative to the first region.
摘要翻译：本发明提供了一种制造半导体器件的方法，通过该方法，提供了包括有源层，与有源层接触的栅极绝缘膜和与有源层重叠的栅极与其间的栅极绝缘膜的晶体管。在有源层和第二区域之间，与栅电极重叠的第一区域的一部分添加杂质，而通过从有源层向一个倾斜方向添加杂质，而在有源层中添加杂质 ; 并且第二区域相对于第一区域位于一个方向上。

15. 发明申请

US20120315735A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US20120315735A1
公开(公告)日：2012-12-13
申请号：US13482398
申请日：2012-05-29
申请人： Junichi KOEZUKA , Shinji OHNO , Yuichi SATO , Shunpei YAMAZAKI
发明人： Junichi KOEZUKA , Shinji OHNO , Yuichi SATO , Shunpei YAMAZAKI
IPC分类号： H01L21/336
CPC分类号： H01L29/7869
摘要： A transistor using an oxide semiconductor, which has good on-state characteristics is provided. A high-performance semiconductor device including the transistor capable of high-speed response and high-speed operation is provided. In a manufacturing method of the transistor including the oxide semiconductor film including a channel formation region, an insulating film including a metal element is formed over the oxide semiconductor film, and low-resistance regions in which a dopant added through the insulating film by an implantation method is included are formed in the oxide semiconductor film. The channel formation region is positioned between the low-resistance regions in the channel length direction.
摘要翻译：提供了具有良好的导通状态特性的使用氧化物半导体的晶体管。提供了包括能够进行高速响应和高速运行的晶体管的高性能半导体器件。在包括具有沟道形成区域的氧化物半导体膜的晶体管的制造方法中，在氧化物半导体膜上形成包含金属元素的绝缘膜，以及通过注入在绝缘膜上添加的掺杂剂的低电阻区域包含的方法形成在氧化物半导体膜中。沟道形成区域位于沟道长度方向的低电阻区域之间。

16. 发明申请

US20120315730A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US20120315730A1
公开(公告)日：2012-12-13
申请号：US13484670
申请日：2012-05-31
申请人： Junichi KOEZUKA , Shinji OHNO , Yuichi SATO , Shunpei YAMAZAKI
发明人： Junichi KOEZUKA , Shinji OHNO , Yuichi SATO , Shunpei YAMAZAKI
IPC分类号： H01L21/336
CPC分类号： H01L29/7869 , H01L29/24 , H01L29/4908 , H01L29/495 , H01L29/66969 , H01L29/78603 , H01L29/78618
摘要： A transistor using an oxide semiconductor, which has good on-state characteristics is provided. A high-performance semiconductor device including the transistor capable of high-speed response and high-speed operation is provided. The transistor includes the oxide semiconductor film including a channel formation region and low-resistance regions in which a metal element and a dopant are included. The channel formation region is positioned between the low-resistance regions in the channel length direction. In a manufacturing method of the transistor, the metal element is added by heat treatment performed in the state where the oxide semiconductor film is in contact with a film including the metal element and the dopant is added through the film including the metal element by an implantation method so that the low resistance regions in which a metal element and a dopant are included are formed.
摘要翻译：提供了具有良好的导通状态特性的使用氧化物半导体的晶体管。提供了包括能够进行高速响应和高速运行的晶体管的高性能半导体器件。晶体管包括包括沟道形成区域的氧化物半导体膜和包含金属元素和掺杂剂的低电阻区域。沟道形成区域位于沟道长度方向的低电阻区域之间。在晶体管的制造方法中，通过在氧化物半导体膜与包含金属元素的膜接触的状态下进行的热处理来添加金属元素，并且通过植入通过包含金属元素的膜添加掺杂剂形成包含金属元素和掺杂剂的低电阻区域。

17. 发明申请

US20120286270A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120286270A1
公开(公告)日：2012-11-15
申请号：US13463092
申请日：2012-05-03
申请人： Atsuo ISOBE , Toshinari SASAKI , Junichi KOEZUKA , Shunpei YAMAZAKI
发明人： Atsuo ISOBE , Toshinari SASAKI , Junichi KOEZUKA , Shunpei YAMAZAKI
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/4238 , H01L21/02565 , H01L21/265 , H01L21/425 , H01L21/84 , H01L27/1085 , H01L27/10876 , H01L27/1156 , H01L27/1203 , H01L27/1225 , H01L28/40 , H01L29/045 , H01L29/0847 , H01L29/66477 , H01L29/66742 , H01L29/66969 , H01L29/78603 , H01L29/7869 , H01L29/78693
摘要： It is an object to provide a semiconductor device in which a short-channel effect is suppressed and miniaturization is achieved, and a manufacturing method thereof. A trench is formed in an insulating layer and impurities are added to an oxide semiconductor film in contact with an upper end corner portion of the trench, whereby a source region and a drain region are formed. With the above structure, miniaturization can be achieved. Further, with the trench, a short-channel effect can be suppressed setting the depth of the trench as appropriate even when a distance between a source electrode layer and a drain electrode layer is shortened.
摘要翻译：本发明的目的是提供一种抑制短路效应并实现小型化的半导体器件及其制造方法。在绝缘层中形成沟槽，并且将杂质添加到与沟槽的上端角部接触的氧化物半导体膜，由此形成源极区域和漏极区域。利用上述结构，可以实现小型化。此外，利用沟槽，即使当源电极层和漏电极层之间的距离缩短时，也可以适当地抑制沟槽的深度适当地设定短沟道效应。

18. 发明申请

US20110070693A1 METHOD FOR MANUFACTURING OXIDE SEMICONDUCTOR FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造氧化物半导体膜的方法和制造半导体器件的方法
公开(公告)号：US20110070693A1
公开(公告)日：2011-03-24
申请号：US12888846
申请日：2010-09-23
申请人： Shunpei YAMAZAKI , Junichiro SAKATA , Akiharu MIYANAGA , Masayuki SAKAKURA , Junichi KOEZUKA , Tetsunori MARUYAMA , Yuki IMOTO
发明人： Shunpei YAMAZAKI , Junichiro SAKATA , Akiharu MIYANAGA , Masayuki SAKAKURA , Junichi KOEZUKA , Tetsunori MARUYAMA , Yuki IMOTO
IPC分类号： H01L21/34 , C23C14/34
CPC分类号： H01L29/66742 , C23C14/086 , H01L21/02422 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L29/7869
摘要： An object is to provide an oxide semiconductor having stable electric characteristics and a semiconductor device including the oxide semiconductor. A manufacturing method of a semiconductor film by a sputtering method includes the steps of holding a substrate in a treatment chamber which is kept in a reduced-pressure state; heating the substrate at lower than 400° C.; introducing a sputtering gas from which hydrogen and moisture are removed in the state where remaining moisture in the treatment chamber is removed; and forming an oxide semiconductor film over the substrate with use of a metal oxide which is provided in the treatment chamber as a target. When the oxide semiconductor film is formed, remaining moisture in a reaction atmosphere is removed; thus, the concentration of hydrogen and the concentration of hydride in the oxide semiconductor film can be reduced. Thus, the oxide semiconductor film can be stabilized.
摘要翻译：目的是提供具有稳定电特性的氧化物半导体和包括氧化物半导体的半导体器件。通过溅射法制造半导体膜的方法包括将基板保持在保持在减压状态的处理室中的步骤; 在低于400℃下加热基材。在去除处理室中的剩余水分的状态下引入除去氢气和水分的溅射气体; 以及使用设置在处理室中的金属氧化物作为目标，在基板上形成氧化物半导体膜。当形成氧化物半导体膜时，除去反应气氛中的剩余水分; 因此，可以降低氧化物半导体膜中的氢浓度和氢化物浓度。因此，可以使氧化物半导体膜稳定。

19. 发明申请

US20110068336A1 SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体元件及其制造方法
公开(公告)号：US20110068336A1
公开(公告)日：2011-03-24
申请号：US12888835
申请日：2010-09-23
申请人： Shunpei YAMAZAKI , Junichiro SAKATA , Akiharu MIYANAGA , Masayuki SAKAKURA , Junichi KOEZUKA , Tetsunori MARUYAMA , Yuki IMOTO
发明人： Shunpei YAMAZAKI , Junichiro SAKATA , Akiharu MIYANAGA , Masayuki SAKAKURA , Junichi KOEZUKA , Tetsunori MARUYAMA , Yuki IMOTO
IPC分类号： H01L29/26 , H01L21/336
CPC分类号： H01L29/66969 , H01L21/02565 , H01L27/1225 , H01L29/7869
摘要： An object is to provide a thin film transistor and a method for manufacturing the thin film transistor including an oxide semiconductor with a controlled threshold voltage, high operation speed, a relatively easy manufacturing process, and sufficient reliability. An impurity having influence on carrier concentration in the oxide semiconductor layer, such as a hydrogen atom or a compound containing a hydrogen atom such as H2O, may be eliminated. An oxide insulating layer containing a large number of defects such as dangling bonds may be formed in contact with the oxide semiconductor layer, such that the impurity diffuses into the oxide insulating layer and the impurity concentration in the oxide semiconductor layer is reduced. The oxide semiconductor layer or the oxide insulating layer in contact with the oxide semiconductor layer may be formed in a deposition chamber which is evacuated with use of a cryopump whereby the impurity concentration is reduced.
摘要翻译：目的在于提供一种薄膜晶体管及其制造方法，该薄膜晶体管包括具有受控阈值电压，高操作速度，相对容易的制造工艺以及足够的可靠性的氧化物半导体。可以消除影响氧化物半导体层中的载流子浓度的杂质，例如氢原子或含有氢原子如H 2 O的化合物。可以与氧化物半导体层接触形成含有大量缺陷的氧化物绝缘层，例如悬挂键，使得杂质扩散到氧化物绝缘层中，并且氧化物半导体层中的杂质浓度降低。与氧化物半导体层接触的氧化物半导体层或氧化物绝缘层可以在使用低温泵抽真空的沉积室中形成，从而杂质浓度降低。

20. 发明申请

US20100294535A1 LIGHT-TRANSMITTING CONDUCTIVE FILM, DISPLAY DEVICE, ELECTRONIC DEVICE, AND MANUFACTURING METHOD OF LIGHT-TRANSMITTING CONDUCTIVE FILM 有权
标题翻译：透光导电膜，显示装置，电子装置及发光导体膜的制造方法
公开(公告)号：US20100294535A1
公开(公告)日：2010-11-25
申请号：US12781894
申请日：2010-05-18
申请人： Junichi KOEZUKA , Tetsunori MARUYAMA , Takayuki SAITO , Yuki IMOTO , Noriaki UTO , Yuta ENDO , Hitomi SHIONOYA , Takuya HIROHASHI , Shunpei YAMAZAKI
发明人： Junichi KOEZUKA , Tetsunori MARUYAMA , Takayuki SAITO , Yuki IMOTO , Noriaki UTO , Yuta ENDO , Hitomi SHIONOYA , Takuya HIROHASHI , Shunpei YAMAZAKI
IPC分类号： H01B5/00 , C23C14/34
CPC分类号： H01B1/02 , C23C14/0676 , C23C14/3414 , C23C14/541 , C23C14/5806
摘要： An object is to provide a transparent conductive film having favorable transparency and conductivity at low cost. Another object is to reduce the resistivity of a transparent conductive film formed using conductive oxynitride including zinc and aluminum. Another object is to provide a transparent conductive film that is formed using conductive oxynitride including zinc and aluminum. When aluminum and nitrogen are made to be included in a transparent conductive film formed using oxide including zinc to form a transparent conductive film that is formed using conductive oxynitride including zinc and aluminum, the transparent conductive film can have reduced resistivity. Heat treatment after the formation of the transparent conductive film that is formed using conductive oxynitride including zinc and aluminum enables reduction in resistivity of the transparent conductive film.
摘要翻译：本发明的目的是提供一种透明导电膜，其具有良好的透明性和低导电性。另一个目的是降低使用包括锌和铝的导电氮氧化物形成的透明导电膜的电阻率。另一个目的是提供使用包括锌和铝的导电氮氧化物形成的透明导电膜。当使用包含锌的氧化物形成的透明导电膜中包含铝和氮以形成使用包括锌和铝的导电氮氧化物形成的透明导电膜时，透明导电膜可以具有降低的电阻率。在形成使用包括锌和铝的导电氮氧化物形成的透明导电膜之后的热处理使得能够降低透明导电膜的电阻率。

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