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11. 发明授权

US09610750B2 Composite structure and manufacturing method therefor 有权
公开(公告)号：US09610750B2
公开(公告)日：2017-04-04
申请号：US14131730
申请日：2012-06-15
申请人： Tomomi Yukumoto , Takeshi Yamasaki , Shoji Akiyama , Yuji Akiyama
发明人： Tomomi Yukumoto , Takeshi Yamasaki , Shoji Akiyama , Yuji Akiyama
IPC分类号： B32B3/26 , B32B3/20 , B32B3/30 , B32B27/08 , B32B3/08 , B01L3/00 , G01N21/51
CPC分类号： B32B3/30 , B01L3/502707 , B01L3/502715 , B01L2200/0636 , B01L2200/0689 , B01L2200/12 , B01L2300/0645 , B01L2300/0654 , B01L2300/0816 , B01L2300/0838 , B01L2300/0877 , B01L2300/0887 , B32B3/08 , B32B3/266 , B32B27/08 , B32B2307/412 , G01N21/51 , G01N21/645 , G01N2021/513 , G01N2021/6482 , G01N2201/06113 , Y10T428/24612
摘要： There is provided a composite structure including: at least two substrates which are made of thermoplastic resin and which are bonded by thermocompression; and at least one member which is made of a material whose heat distortion temperature is higher than a heat distortion temperature of the thermoplastic resin and which is inserted into a space formed in at least one of the substrates. The member inserted in the space is fixed and held by wall surfaces which form the space of the substrates and which are thermally deformed by thermocompression.

12. 发明申请

US20140308800A1 METHOD FOR MANUFACTURING COMPOSITE WAFERS 有权
标题翻译：制造复合波导的方法
公开(公告)号：US20140308800A1
公开(公告)日：2014-10-16
申请号：US14343515
申请日：2012-09-14
申请人： Shoji Akiyama , Kazutoshi Nagata
发明人： Shoji Akiyama , Kazutoshi Nagata
IPC分类号： H01L21/762
CPC分类号： H01L21/76254 , H01L21/02002 , H01L21/2007 , H01L21/2011 , H01L21/76243 , H01L21/76251
摘要： This invention provides a method for manufacturing composite wafers in which at least two composite wafers can be obtained from one donor wafer, and in which the chamfering step can be omitted. Provided is a method for manufacturing composite wafers comprising: bonding surfaces of at least two handle wafers and a surface of a donor wafer which has a diameter greater than or equal to a sum of diameters of the at least two handle wafers and which has a hydrogen ion implantation layer formed inside thereof by implanting hydrogen ions from the surface of the donor wafer, to obtain a bonded wafer; heating the bonded wafer at 200° C. to 400° C.; and detaching a film from the donor wafer along the hydrogen ion implantation layer of the heated bonded wafer, to obtain the composite wafers having the film transferred onto the at least two handle wafers.
摘要翻译：本发明提供一种制造复合晶片的方法，其中可以从一个施主晶片获得至少两个复合晶片，并且其中可以省略倒角步骤。提供了一种用于制造复合晶片的方法，包括：将至少两个手柄晶片的接合表面和施主晶片的表面直接大于或等于至少两个手柄晶片的直径之和，并且具有氢通过从施主晶片的表面注入氢离子形成在其内部的离子注入层，以获得接合晶片; 将粘合晶片在200℃加热至400℃; 以及沿加热的接合晶片的氢离子注入层从施主晶片分离膜，以获得具有转移到至少两个处理晶片上的膜的复合晶片。

13. 外观设计

USD704580S1 Micro flow channel chip for flow cytometer 有权
标题翻译：用于流式细胞仪的微流通芯片
公开(公告)号：USD704580S1
公开(公告)日：2014-05-13
申请号：US29421304
申请日：2012-06-29
申请人： Yuji Akiyama , Shoji Akiyama , Takeshi Yamasaki
设计人： Yuji Akiyama , Shoji Akiyama , Takeshi Yamasaki

14. 发明申请

US20130003036A1 PHOTO MASK UNIT COMPRISING A PHOTOMASK AND A PELLICLE AND A METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：包含光电照相机和胶囊的照片遮罩单元及其制造方法
公开(公告)号：US20130003036A1
公开(公告)日：2013-01-03
申请号：US13608716
申请日：2012-09-10
申请人： Shoji Akiyama , Yoshihiro Kubota
发明人： Shoji Akiyama , Yoshihiro Kubota
IPC分类号： G03B27/58 , B23P11/00
CPC分类号： G03F1/24 , G03F1/62 , G03F1/64 , Y10T29/49826
摘要： It is an object of the present invention to provide a photomask unit suitable for forming a microscopic pattern of 32 nm or smaller on a photoresist film using the EUV exposure technique and being able to reliably prevent the flatness of a photomask from being lowered. The photomask unit 1 according to the present invention includes a pellicle membrane 6, a pellicle frame 7 onto one surface of which a region of the pellicle membrane 6 in the vicinity of side portions of the pellicle membrane 6 is fixed, a photomask 2 and a stage 3 onto one surface of which the photomask 2 and the pellicle frame 7 are fixed, and the pellicle frame 7 is fixed onto the stage 3 at a region outside of a region of the stage 3 onto which the photomask 2 is fixed.
摘要翻译：本发明的目的是提供一种适用于使用EUV曝光技术在光致抗蚀剂膜上形成32nm或更小的微观图案并能够可靠地防止光掩模的平坦度降低的光掩模单元。根据本发明的光掩模单元1包括防护薄膜6，防护薄膜框架7，其一个表面上防护薄膜6的侧部附近的防护薄膜6的区域被固定，光掩模2和阶段3在其一个表面上固定光掩模2和防护薄膜组件框架7，并且防护膜框架7在固定有光掩模2的载物台3的区域外部的区域固定到载物台3上。

15. 发明授权

US08268700B2 Method for manufacturing SOI wafer 有权
标题翻译：制造SOI晶圆的方法
公开(公告)号：US08268700B2
公开(公告)日：2012-09-18
申请号：US12153160
申请日：2008-05-14
申请人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Makoto Kawai , Yuuji Tobisaka
发明人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Makoto Kawai , Yuuji Tobisaka
IPC分类号： H01L21/30
CPC分类号： H01L21/76254
摘要： There is disclosed a method for manufacturing an SOI wafer comprising at least: implanting a hydrogen ion, a rare gas ion, or both the ions into a donor wafer formed of a silicon wafer or a silicon wafer having an oxide film formed on a surface thereof from a surface of the donor wafer, thereby forming an ion implanted layer; performing a plasma activation treatment with respect to at least one of an ion implanted surface of the donor wafer and a surface of a handle wafer, the surface of the handle wafer is to be bonded to the ion implanted surface; closely bonding these surfaces to each other; mechanically delaminating the donor wafer at the ion implanted layer as a boundary and thereby reducing a film thickness thereof to provide an SOI layer, and performing a heat treatment at 600 to 1000° C.; and polishing a surface of the SOI layer for 10 to 50 nm based on chemical mechanical polishing.A method for manufacturing with excellent productivity an SOI wafer having an SOI layer with a mirror-finished surface and high film thickness uniformity can be provided.
摘要翻译：公开了一种制造SOI晶片的方法，该方法至少包括：将氢离子，稀有气体离子或两者离子注入到由硅晶片或具有在其表面上形成的氧化膜的硅晶片形成的施主晶片中从施主晶片的表面，从而形成离子注入层; 对施主晶片的离子注入表面和处理晶片的表面中的至少一个进行等离子体激活处理，把手晶片的表面与离子注入表面结合; 将这些表面彼此紧密结合; 以离子注入层的施主晶片作为边界进行机械分层，由此降低其膜厚以提供SOI层，并在600〜1000℃下进行热处理。并且基于化学机械抛光将SOI层的表面抛光10至50nm。可以提供具有优异的生产率的具有SOI层的具有镜面精加工表面和高膜厚均匀性的SOI晶片的方法。

16. 发明授权

US08030118B2 Method for producing single crystal silicon solar cell and single crystal silicon solar cell 有权
公开(公告)号：US08030118B2
公开(公告)日：2011-10-04
申请号：US11976021
申请日：2007-10-19
申请人： Atsuo Ito , Shoji Akiyama , Makoto Kawai , Koichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
发明人： Atsuo Ito , Shoji Akiyama , Makoto Kawai , Koichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
IPC分类号： H01L21/00
CPC分类号： H01L31/068 , H01L31/022466 , H01L31/1884 , H01L31/1896 , Y02B10/10 , Y02E10/547
摘要： A method for producing a single crystal silicon solar cell including the steps of: implanting ions into a single crystal silicon substrate through an ion implanting surface thereof; closely contacting the single crystal silicon substrate and a transparent insulator substrate with each other via a transparent electroconductive adhesive while using the ion implanting surface as a bonding surface; curing and maturing the transparent electroconductive adhesive into a transparent electroconductive film; applying an impact to the ion implanted layer to mechanically delaminate the single crystal silicon substrate to leave a single crystal silicon layer; and forming a p-n junction in the single crystal silicon layer.

17. 发明授权

US07993818B2 Optical disk manufacturing method 失效
标题翻译：光盘制造方法
公开(公告)号：US07993818B2
公开(公告)日：2011-08-09
申请号：US11613062
申请日：2006-12-19
申请人： Hidetoshi Watanabe , Shoji Akiyama
发明人： Hidetoshi Watanabe , Shoji Akiyama
IPC分类号： B29D17/00
CPC分类号： B29D17/005 , G11B7/24038 , G11B7/26
摘要： A method for manufacturing an optical disk having a middle layer on a substrate includes the steps of coating an ultraviolet curing resin over the substrate, irradiating ultraviolet rays to the ultraviolet curing resin and prepolymerizing the ultraviolet curing resin, and forming the middle layer by pressing a stamper against the prepolymerized ultraviolet curing resin, irradiating ultraviolet rays to the ultraviolet curing resin and thus curing the ultraviolet curing resin.
摘要翻译：一种在基板上具有中间层的光盘的制造方法，其特征在于，在基板上涂布紫外线固化树脂，向紫外线固化树脂照射紫外线，使紫外线固化树脂预聚合，通过按压压制预聚合的紫外线固化树脂，向紫外线固化树脂照射紫外线，从而固化紫外线固化树脂。

18. 发明申请

US20110104871A1 METHOD FOR MANUFACTURING BONDED SUBSTRATE 有权
标题翻译：制造粘结基板的方法
公开(公告)号：US20110104871A1
公开(公告)日：2011-05-05
申请号：US12934788
申请日：2009-04-10
申请人： Yuji Tobisaka , Yoshihiro Kubota , Atsuo Ito , Kouichi Tanaka , Makoto Kawai , Shoji Akiyama , Hiroshi Tamura
发明人： Yuji Tobisaka , Yoshihiro Kubota , Atsuo Ito , Kouichi Tanaka , Makoto Kawai , Shoji Akiyama , Hiroshi Tamura
IPC分类号： H01L21/762
CPC分类号： H01L21/187 , H01L21/76254
摘要： Provided is a method for manufacturing a bonded wafer with a good thin film over the entire substrate surface, especially in the vicinity of the lamination terminal point. The method for manufacturing a bonded wafer comprises at least the following steps of: forming an ion-implanted region by implanting a hydrogen ion or a rare gas ion, or the both types of ions from a surface of a first substrate which is a semiconductor substrate; subjecting at least one of an ion-implanted surface of the first substrate and a surface of a second substrate to be attached to a surface activation treatment; laminating the ion-implanted surface of the first substrate and the surface of the second substrate in an atmosphere with a humidity of 30% or less and/or a moisture content of 6 g/m3 or less; and a splitting the first substrate at the ion-implanted region so as to reduce thickness of the first substrate, thereby manufacturing a bonded wafer with a thin film on the second substrate.
摘要翻译：提供一种在整个基板表面上，特别是在层叠终点附近制造具有良好薄膜的接合晶片的方法。制造接合晶片的方法至少包括以下步骤：通过从作为半导体衬底的第一衬底的表面注入氢离子或稀有气体离子或两种离子形成离子注入区域 ; 对第一基板的离子注入表面和第二基板的表面中的至少一个进行表面活化处理; 将第一基板的离子注入表面和第二基板的表面在湿度为30％以下和/或6g / m 3以下的气氛中层压; 以及在离子注入区域处分裂第一衬底以便减小第一衬底的厚度，由此在第二衬底上制造具有薄膜的接合晶片。

19. 发明授权

US07895749B2 Method of manufacturing heat exchanger 有权
标题翻译：换热器的制造方法
公开(公告)号：US07895749B2
公开(公告)日：2011-03-01
申请号：US12382962
申请日：2009-03-27
申请人： Yoshihisa Eto , Naoto Takayanagi , Shoji Akiyama , Muneo Sakurada
发明人： Yoshihisa Eto , Naoto Takayanagi , Shoji Akiyama , Muneo Sakurada
IPC分类号： B23P15/26
CPC分类号： F28F9/18 , F28D1/0391 , F28D1/0535 , F28F3/025 , Y10T29/49391
摘要： A heat exchange tube is formed by using a sheet member not clad with a brazing material layer, with bonding regions at which ends of the sheet member are overlapped and brazed by using a brazing material. This structure reduces the extent to which the brazing material becomes dispersed while the heat exchange tube is brazed and the likelihood of dissolution due to erosion, which makes it possible to assure the desired product quality, such as corrosion resistance, even when a tube material with a smaller wall thickness is used.
摘要翻译：通过使用未包覆钎焊材料层的片材构件形成热交换管，其中，通过使用钎焊材料将片状构件的端部重叠并钎焊的接合区域。这种结构减少了钎焊材料在钎焊时的分散程度以及由于侵蚀导致的溶解的可能性，这使得即使当管材料具有耐腐蚀性时，也可以确保期望的产品质量，例如耐腐蚀性使用较小的壁厚。

20. 发明授权

US07879175B2 Method for manufacturing pyrolytic boron nitride composite substrate 有权
标题翻译：制造热解氮化硼复合基板的方法
公开(公告)号：US07879175B2
公开(公告)日：2011-02-01
申请号：US12078276
申请日：2008-03-28
申请人： Makoto Kawai , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Yuuji Tobisaka , Shoji Akiyama
发明人： Makoto Kawai , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Yuuji Tobisaka , Shoji Akiyama
IPC分类号： B32B38/10
CPC分类号： H01L21/76254 , C23C14/48
摘要： Wettability of a PBN material surface with respect to a metal is improved to expand use applications. Hydrogen ions are implanted into a surface of a silicon substrate 10 to form an ion implanted region 11 at a predetermined depth near a surface of the silicon substrate 10, and a plasma treatment or an ozone treatment is performed with respect to a main surface of the silicon substrate 10 for the purpose of surface cleaning or surface activation. The main surfaces of the silicon substrate 10 and a PBN substrate 20 subjected to the surface treatment are appressed against each other to be bonded at a room temperature, and an external impact shock is given to the bonded substrate to mechanically delaminate a silicon film 12 from a bulk 13 of the silicon substrate to be transferred. An obtained PBN composite substrate 30 is diced to form a chip having a desired size, and a refractory metal is metallized on the silicon film 12 side to be connected with a wiring material.
摘要翻译： PBN材料表面相对于金属的润湿性得到改善以扩大使用应用。将氢离子注入到硅衬底10的表面中以在硅衬底10的表面附近的预定深度处形成离子注入区11，并且相对于硅衬底10的主表面进行等离子体处理或臭氧处理硅基板10，用于表面清洁或表面活化。经过表面处理的硅衬底10和PBN衬底20的主表面在室温下相互粘合，并且对键合衬底施加外部冲击冲击，从而将硅膜12从待转移的硅衬底的体积13。将获得的PBN复合基板30切割成具有所需尺寸的芯片，并且将难熔金属在硅膜12侧金属化以与布线材料连接。

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