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11. 发明授权

US08123856B2 Method and apparatus for producing group III nitride based compound semiconductor 有权
标题翻译：制备III族氮化物基化合物半导体的方法和装置
公开(公告)号：US08123856B2
公开(公告)日：2012-02-28
申请号：US12225550
申请日：2007-04-05
申请人： Shiro Yamazaki , Makoto Iwai , Takanao Shimodaira , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
发明人： Shiro Yamazaki , Makoto Iwai , Takanao Shimodaira , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
IPC分类号： C30B19/00 , C30B19/06
CPC分类号： C30B29/403 , C30B9/00 , Y10S117/90 , Y10T117/10 , Y10T117/1024
摘要： In the flux method, a source nitrogen gas is sufficiently heated before feeding to an Na—Ga mixture.The apparatus of the invention is provided for producing a group III nitride based compound semiconductor. The apparatus includes a reactor which maintains a group III metal and a metal differing from the group III metal in a molten state, a heating apparatus for heating the reactor, an outer vessel for accommodating the reactor and the heating apparatus, and a feed pipe for feeding a gas containing at least nitrogen from the outside of the outer vessel into the reactor. The feed pipe has a zone for being heated together with the reactor by means of the heating apparatus, wherein the zone is heated inside the outer vessel and outside the reactor.
摘要翻译：在通量法中，在将氮源充分加热至Na-Ga混合物之前，充分加热。提供本发明的装置用于制造III族氮化物基化合物半导体。该装置包括在熔融状态下维持III族金属和不同于III族金属的金属的反应器，用于加热反应器的加热装置，用于容纳反应器的外部容器和加热装置，以及用于将从外部容器外部至少含有氮气的气体进料到反应器中。进料管具有通过加热装置与反应器一起加热的区域，其中该区域在外部容器内部和反应器外部被加热。

12. 发明授权

US08227324B2 Method for producing group III nitride-based compound semiconductor crystal 有权
标题翻译：制备III族氮化物基化合物半导体晶体的方法
公开(公告)号：US08227324B2
公开(公告)日：2012-07-24
申请号：US12448207
申请日：2007-12-10
申请人： Shiro Yamazaki , Makoto Iwai , Takanao Shimodaira , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
发明人： Shiro Yamazaki , Makoto Iwai , Takanao Shimodaira , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
IPC分类号： H01L21/20
CPC分类号： C30B19/02 , C30B9/10 , C30B29/406 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02625
摘要： A GaN single crystal 20 is grown on a crystal growth surface of a seed crystal (GaN layer 13) through the flux method in a nitrogen (N2) atmosphere at 3.7 MPa and 870° C. employing a flux mixture including Ga, Na, and Li at about 870° C. Since the back surface of the template 10 is R-plane of the sapphire substrate 11, the template 10 is readily corroded or dissolved in the flux mixture from the back surface thereof. Therefore, the template 10 is gradually dissolved or corroded from the back surface thereof, resulting in separation from the semiconductor or dissolution in the flux. When the GaN single crystal 20 is grown to a sufficient thickness, for example, about 500 μm or more, the temperature of the crucible is maintained at 850° C. to 880° C., whereby the entirety of the sapphire substrate 11 is dissolved in the flux mixture.
摘要翻译：在氮（N 2）气氛中，在3.7MPa和870℃下，通过助熔剂法在GaN晶体生长面（GaN层13）上生长GaN单晶20，使用包含Ga，Na和 Li在约870℃。由于模板10的背面是蓝宝石衬底11的R平面，所以模板10容易被腐蚀或溶解在焊剂混合物的背面。因此，模板10从其背面逐渐溶解或腐蚀，导致与半导体的分离或焊剂的溶解。当GaN单晶20生长至足够的厚度，例如约500μm或更大时，坩埚的温度保持在850℃至880℃，从而整个蓝宝石衬底11溶解在助焊剂混合物中。

13. 发明申请

US20090173273A1 Method and Apparatus for Producing Group III Nitride Based Compound Semiconductor 有权
标题翻译：用于生产基于III族氮化物的化合物半导体的方法和装置
公开(公告)号：US20090173273A1
公开(公告)日：2009-07-09
申请号：US12225550
申请日：2007-04-05
申请人： Shiro Yamazaki , Makoto Iwai , Takanao Shimodaira , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
发明人： Shiro Yamazaki , Makoto Iwai , Takanao Shimodaira , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
IPC分类号： C30B19/00 , C30B19/06
CPC分类号： C30B29/403 , C30B9/00 , Y10S117/90 , Y10T117/10 , Y10T117/1024
摘要： In the flux method, a source nitrogen gas is sufficiently heated before feeding to an Na—Ga mixture.The apparatus of the invention is provided for producing a group III nitride based compound semiconductor The apparatus includes a reactor which maintains a group III metal and a metal differing from the group III metal in a molten state, a heating apparatus for heating the reactor, an outer vessel for accommodating the reactor and the heating apparatus, and a feed pipe for feeding a gas containing at least nitrogen from the outside of the outer vessel into the reactor. The feed pipe has a zone for being heated together with the reactor by means of the heating apparatus, wherein the zone is heated inside the outer vessel and outside the reactor.
摘要翻译：在通量法中，在将氮源充分加热至Na-Ga混合物之前，充分加热。本发明的装置用于制造III族氮化物基化合物半导体该装置包括：在熔融状态下保持III族金属和不同于III族金属的金属的反应器，用于加热反应器的加热装置，用于容纳反应器和加热装置的外部容器，以及用于将从外部容器的外部至少含有氮气的气体进料到反应器中的进料管。进料管具有通过加热装置与反应器一起加热的区域，其中该区域在外部容器内部和反应器外部被加热。

14. 发明申请

US20100093157A1 METHOD FOR PRODUCING GROUP III NITRIDE-BASED COMPOUND SEMICONDUCTOR CRYSTAL 有权
标题翻译：用于生产III族氮化物化合物半导体晶体的方法
公开(公告)号：US20100093157A1
公开(公告)日：2010-04-15
申请号：US12448207
申请日：2007-12-10
申请人： Shiro Yamazaki , Makoto Iwai , Takanao Shimodaira , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
发明人： Shiro Yamazaki , Makoto Iwai , Takanao Shimodaira , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
IPC分类号： H01L21/20
CPC分类号： C30B19/02 , C30B9/10 , C30B29/406 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02625
摘要： A GaN single crystal 20 is grown on a crystal growth surface of a seed crystal (GaN layer 13) through the flux method in a nitrogen (N2) atmosphere at 3.7 MPa and 870° C. employing a flux mixture including Ga, Na, and Li at about 870° C. Since the back surface of the template 10 is R-plane of the sapphire substrate 11, the template 10 is readily corroded or dissolved in the flux mixture from the back surface thereof. Therefore, the template 10 is gradually dissolved or corroded from the back surface thereof, resulting in separation from the semiconductor or dissolution in the flux. When the GaN single crystal 20 is grown to a sufficient thickness, for example, about 500 μm or more, the temperature of the crucible is maintained at 850° C. to 880° C., whereby the entirety of the sapphire substrate 11 is dissolved in the flux mixture.
摘要翻译：在氮（N 2）气氛中，在3.7MPa和870℃下，通过助熔剂法在GaN晶体生长面（GaN层13）上生长GaN单晶20，使用包含Ga，Na和 Li在约870℃。由于模板10的背面是蓝宝石衬底11的R平面，所以模板10容易被腐蚀或溶解在焊剂混合物的背面。因此，模板10从其背面逐渐溶解或腐蚀，导致与半导体的分离或焊剂的溶解。当GaN单晶20生长至足够的厚度，例如约500μm或更大时，坩埚的温度保持在850℃至880℃，从而整个蓝宝石衬底11溶解在助焊剂混合物中。

15. 发明申请

US20090169444A1 Apparatus for Producing Group III Nitride Based Compound Semiconductor 审中-公开
标题翻译：用于生产基于III族氮化物的化合物半导体的装置
公开(公告)号：US20090169444A1
公开(公告)日：2009-07-02
申请号：US12225716
申请日：2007-04-05
申请人： Shiro Yamazaki , Makoto Iwai , Takanao Shimodaira , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
发明人： Shiro Yamazaki , Makoto Iwai , Takanao Shimodaira , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
IPC分类号： B01J19/00
CPC分类号： C30B9/00 , C30B29/403
摘要： An object of the invention is to prevent, in the flux method, diffusion of substances that constitute the atmosphere of the outer vessel into the reactor.The apparatus for producing a group III nitride based compound semiconductor, the apparatus including a reactor which maintains a group III metal and a metal differing from the group III metal in a molten state, a heating apparatus for heating the reactor, and an outer vessel for accommodating the reactor and the heating apparatus, characterized in that diffusion of substances that constitute the atmosphere of the outer vessel into the reactor is prevented.
摘要翻译：本发明的目的是在助焊剂方法中防止构成外容器气氛的物质扩散到反应器中。用于制造III族氮化物基化合物半导体的装置，该装置包括在熔融状态下保持III族金属和不同于III族金属的金属的反应器，用于加热反应器的加热装置和用于容纳反应器和加热装置，其特征在于防止构成外部容器的气体的物质扩散到反应器中。

16. 发明申请

US20090294909A1 N-type group III nitride-based compound semiconductor and production method therefor 有权
标题翻译： N型III族氮化物系化合物半导体及其制造方法
公开(公告)号：US20090294909A1
公开(公告)日：2009-12-03
申请号：US12453743
申请日：2009-05-20
申请人： Seiji Nagai , Shiro Yamazaki , Yasuhide Yakushi , Takayuki Sato , Makoto Iwai , Katsuhiro Imai , Yusuke Mori , Yasuo Kitaoka
发明人： Seiji Nagai , Shiro Yamazaki , Yasuhide Yakushi , Takayuki Sato , Makoto Iwai , Katsuhiro Imai , Yusuke Mori , Yasuo Kitaoka
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： C30B9/12 , C30B9/10 , C30B29/403
摘要： An object of the present invention is to realize, by the flux process, the production of a high-quality n-type semiconductor crystal having high concentration of electrons. The method of the invention for producing an n-type Group III nitride-based compound semiconductor by the flux process, the method including preparing a melt by melting at least a Group III element by use of a flux; supplying a nitrogen-containing gas to the melt; and growing an n-type Group III nitride-based compound semiconductor crystal on a seed crystal from the melt. In the method, carbon and germanium are dissolved in the melt, and germanium is incorporated as a donor into the semiconductor crystal, to thereby produce an n-type semiconductor crystal.The mole percentage of germanium to gallium in the melt is 0.05 mol % to 0.5 mol %, and the mole percentage of carbon to sodium is 0.1 mol % to 3.0 mol %.
摘要翻译：本发明的目的是通过磁通处理来实现具有高浓度电子的高质量n型半导体晶体的生产。本发明的用于通过助熔剂制造n型III族氮化物基化合物半导体的方法，该方法包括通过使用助熔剂熔化至少III族元素来制备熔体; 向熔体供给含氮气体; 以及从所述熔体在籽晶上生长n型III族氮化物基化合物半导体晶体。在该方法中，将碳和锗溶解在熔体中，并将锗作为供体掺入到半导体晶体中，从而制备n型半导体晶体。熔体中锗与镓的摩尔比为0.05摩尔％〜0.5摩尔％，碳与钠的摩尔比为0.1摩尔％〜3.0摩尔％。

17. 发明授权

US08507364B2 N-type group III nitride-based compound semiconductor and production method therefor 有权
公开(公告)号：US08507364B2
公开(公告)日：2013-08-13
申请号：US12453743
申请日：2009-05-20
申请人： Seiji Nagai , Shiro Yamazaki , Yasuhide Yakushi , Takayuki Sato , Makoto Iwai , Katsuhiro Imai , Yusuke Mori , Yasuo Kitaoka
发明人： Seiji Nagai , Shiro Yamazaki , Yasuhide Yakushi , Takayuki Sato , Makoto Iwai , Katsuhiro Imai , Yusuke Mori , Yasuo Kitaoka
IPC分类号： H01L21/20
CPC分类号： C30B9/12 , C30B9/10 , C30B29/403
摘要： An object of the present invention is to realize, by the flux process, the production of a high-quality n-type semiconductor crystal having high concentration of electrons. The method of the invention for producing an n-type Group III nitride-based compound semiconductor by the flux process, the method including preparing a melt by melting at least a Group III element by use of a flux; supplying a nitrogen-containing gas to the melt; and growing an n-type Group III nitride-based compound semiconductor crystal on a seed crystal from the melt. In the method, carbon and germanium are dissolved in the melt, and germanium is incorporated as a donor into the semiconductor crystal, to thereby produce an n-type semiconductor crystal.The mole percentage of germanium to gallium in the melt is 0.05 mol % to 0.5 mol %, and the mole percentage of carbon to sodium is 0.1 mol % to 3.0 mol %.

18. 发明申请

US20090106959A1 Group III nitride semiconductor manufacturing system 有权
标题翻译： III族氮化物半导体制造系统
公开(公告)号：US20090106959A1
公开(公告)日：2009-04-30
申请号：US12289257
申请日：2008-10-23
申请人： Shiro Yamazaki , Koji Hirata
发明人： Shiro Yamazaki , Koji Hirata
IPC分类号： H01L21/67
CPC分类号： C30B29/403 , C30B9/10 , Y10T29/41 , Y10T117/10
摘要： The invention provides a group III nitride semiconductor manufacturing system which is free from interruption to rotation of a rotational shaft. The group III nitride semiconductor manufacturing system has a reacting vessel having an opening, a crucible disposed in an interior of the reaction vessel and containing a melt including at least a group III metal and an alkali metal, a holding unit supporting the crucible and having a rotational shaft extending from the interior of the reaction vessel to an exterior of the reaction vessel through the opening, a rotational shaft cover covering a part of the rotational shaft positioned at the exterior of the reacting vessel and connected to the reacting vessel at the opening, a rotational driving unit disposed at an outside of the reacting vessel and regulating the rotational shaft and a supply pipe connected to the rotational shaft cover and supplying a gas including at least nitrogen into a gap between the rotational shaft and the rotational shaft cover, wherein the gas and the melt react to grow a group III nitride semiconductor crystal.
摘要翻译：本发明提供一种不影响旋转轴旋转的III族氮化物半导体制造系统。 III族氮化物半导体制造系统具有开口的反应容器，设置在反应容器的内部并含有至少具有III族金属和碱金属的熔融物的坩埚，支撑坩埚的保持单元，旋转轴通过开口从反应容器的内部延伸到反应容器的外部;旋转轴盖，其覆盖位于反应容器外部并连接到开口处的反应容器的旋转轴的一部分，旋转驱动单元，设置在所述反应容器的外部并调节所述旋转轴;以及供给管，其连接到所述旋转轴盖，并且将至少包含氮的气体供应到所述旋转轴和所述旋转轴盖之间的间隙中，其中，气体和熔体反应以生长III族氮化物半导体晶体。

19. 发明授权

US08349079B2 Apparatus for manufacturing group III nitride semiconductor 有权
标题翻译： III族氮化物半导体制造装置
公开(公告)号：US08349079B2
公开(公告)日：2013-01-08
申请号：US12153973
申请日：2008-05-28
申请人： Shiro Yamazaki , Koji Hirata
发明人： Shiro Yamazaki , Koji Hirata
IPC分类号： C30B35/00 , C30B11/00
CPC分类号： C30B29/403 , C01B21/0632 , C30B9/00 , Y10T117/10 , Y10T117/1024
摘要： An apparatus for manufacturing a Group III nitride semiconductor is composed of a pressure vessel, a reaction vessel disposed within the pressure vessel, a heating device disposed within the pressure vessel so as to heat the reaction vessel, and a glove box filled with argon gas. The pressure vessel and the glove box are connected to each other via a gate valve. By virtue of this configuration, a large-sized reusable reaction vessel can be disposed within the pressure vessel without causing oxidation of Na.
摘要翻译：用于制造III族氮化物半导体的装置由压力容器，设置在压力容器内的反应容器，设置在压力容器内以加热反应容器的加热装置和装有氩气的手套箱组成。压力容器和手套箱通过闸阀相互连接。由于这种构造，可以在压力容器内设置大尺寸的可重复使用的反应容器，而不会引起Na的氧化。

20. 发明授权

US08343239B2 Group III nitride semiconductor manufacturing system 有权
公开(公告)号：US08343239B2
公开(公告)日：2013-01-01
申请号：US12289257
申请日：2008-10-23
申请人： Shiro Yamazaki , Koji Hirata
发明人： Shiro Yamazaki , Koji Hirata
IPC分类号： H01L21/02 , C30B9/00 , C30B35/00
CPC分类号： C30B29/403 , C30B9/10 , Y10T29/41 , Y10T117/10
摘要： The invention provides a group III nitride semiconductor manufacturing system which is free from interruption to rotation of a rotational shaft. The group III nitride semiconductor manufacturing system has a reacting vessel having an opening, a crucible disposed in an interior of the reaction vessel and containing a melt including at least a group III metal and an alkali metal, a holding unit supporting the crucible and having a rotational shaft extending from the interior of the reaction vessel to an exterior of the reaction vessel through the opening, a rotational shaft cover covering a part of the rotational shaft positioned at the exterior of the reacting vessel and connected to the reacting vessel at the opening, a rotational driving unit disposed at an outside of the reacting vessel and regulating the rotational shaft and a supply pipe connected to the rotational shaft cover and supplying a gas including at least nitrogen into a gap between the rotational shaft and the rotational shaft cover, wherein the gas and the melt react to grow a group III nitride semiconductor crystal.

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