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11. 发明授权

US4268845A Solid-state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US4268845A
公开(公告)日：1981-05-19
申请号：US96683
申请日：1979-11-23
申请人： Norio Koike , Shoji Hanamura , Masaharu Kubo
发明人： Norio Koike , Shoji Hanamura , Masaharu Kubo
IPC分类号： H01L27/146 , H04N5/335 , H04N5/367 , H04N5/372 , H04N5/374 , H01L27/14
CPC分类号： H01L27/14643 , H04N5/2173
摘要： A solid-state imaging device of a picture element construction made up of photodiodes consisting of an N-type semiconductor substrate, a P-type well region formed in the main surface of said semiconductor substrate, and an N-type region formed in said well region, and vertical switching insulated-gate field effect transistors which utilize said N-type region as either the source or the drain, characterized in that a video voltage is applied to said substrate.
摘要翻译：由N型半导体衬底，形成在所述半导体衬底的主表面中的P型阱区和形成在所述阱中的N型区组成的光电二极管构成的像素结构的固体摄像器件区域和垂直开关绝缘栅场效应晶体管，其利用所述N型区域作为源极或漏极，其特征在于，将视频电压施加到所述衬底。

12. 发明授权

US4323912A Solid-state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US4323912A
公开(公告)日：1982-04-06
申请号：US152690
申请日：1980-05-23
申请人： Norio Koike , Toshihisa Tsukada , Haruhisa Ando , Hideaki Yamamoto , Tadaaki Hirai , Masaharu Kubo , Eiichi Maruyama , Toru Baji , Yukio Takasaki , Shusaku Nagahara
发明人： Norio Koike , Toshihisa Tsukada , Haruhisa Ando , Hideaki Yamamoto , Tadaaki Hirai , Masaharu Kubo , Eiichi Maruyama , Toru Baji , Yukio Takasaki , Shusaku Nagahara
IPC分类号： H01L27/146 , H04N5/335 , H04N5/341 , H04N5/369 , H04N5/372 , H04N5/374 , H01L27/14
CPC分类号： H01L27/14665
摘要： In a solid-state imaging device having a semiconductor integrated circuit in which a plurality of switching elements for addressing positions of picture elements and scanning circuitry for turning the switching elements "on" and "off" in time sequence are disposed on an identical substrate, a photoconductive film which is disposed on the integrated circuit and which is connected with the respective switching elements, and a light transmitting electrode which is disposed on the photoconductive film, a voltage being applied to the light transmitting electrode thereby to bias a region of the photoconductive film on a light entrance side either positively or negatively with respect to a region thereof on the opposite side; a solid-state imaging device characterized in that said each switching element is an element which uses carriers of a polarity opposite to that of carriers having a greater mobility in said photoconductive film.
摘要翻译：在具有半导体集成电路的固态成像装置中，其中用于寻址用于寻址位置的多个开关元件和用于将开关元件“开”和“关”的扫描电路按时间顺序设置在相同的基板上，设置在集成电路上并与各个开关元件连接的光电导膜和设置在光电导膜上的透光电极，施加到光透射电极的电压，从而偏压光电导区域相对于其相对侧的区域，光入射侧的膜是正或负的; 一种固态成像装置，其特征在于，所述每个开关元件是使用与所述光电导膜中迁移率较高的载流子极性相反的载流子的元件。

13. 发明授权

US4032952A Bulk charge transfer semiconductor device 失效
标题翻译：大容量充电传输半导体器件
公开(公告)号：US4032952A
公开(公告)日：1977-06-28
申请号：US347426
申请日：1973-04-03
申请人： Shinya Ohba , Iwao Takemoto , Masaharu Kubo
发明人： Shinya Ohba , Iwao Takemoto , Masaharu Kubo
IPC分类号： H01L29/10 , H01L29/768 , H01L
CPC分类号： H01L29/7685 , H01L29/1062 , H01L29/76833 , H01L29/76841 , Y10S148/08
摘要： In a charge transfer semiconductor device majority carriers are transferred within a semiconductor body on a substrate from means for introducing majority carriers to means for detecting transferred majority carriers by applying pulsed voltages to a series of electrodes disposed on an insulating layer which is disposed on one surface of the semiconductor body between the introducing means and the detecting means. Depletion regions are formed within the semiconductor body, so that one end of a depletion region below one electrode reaches the substrate and another end of a depletion region below an electrode next to the one electrode does not reach the substrate, whereby majority carriers below the one electrode are pushed out below the next electrode.

14. 发明授权

US4514766A Solid-state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US4514766A
公开(公告)日：1985-04-30
申请号：US482791
申请日：1983-04-07
申请人： Norio Koike , Iwao Takemoto , Shinya Ohba , Toshiaki Masuhara , Masaharu Kubo
发明人： Norio Koike , Iwao Takemoto , Shinya Ohba , Toshiaki Masuhara , Masaharu Kubo
IPC分类号： H04N5/345 , H04N5/372 , H04N5/3728 , H04N3/15
CPC分类号： H04N3/1575 , H01L27/14856 , H04N3/1537
摘要： A solid-state imaging device is provided which employs CCDs as vertical shift registers and a horizontal shift register for vertically and horizontally scanning and reading out a large number of photoelectric elements arrayed in a two-dimensional plane. The imaging device is characterized in that the photoelectric elements of each column arranged between the vertical shift registers are alternately connected to the right and left vertical shift registers. This results in the resolution of the device being enhanced sharply.
摘要翻译：提供了一种使用CCD作为垂直移位寄存器的固态成像装置和用于垂直和水平扫描并读出排列在二维平面中的大量光电元件的水平移位寄存器。成像装置的特征在于，布置在垂直移位寄存器之间的每列的光电元件交替地连接到左右垂直移位寄存器。这导致设备的分辨率急剧增加。

15. 发明授权

US4316205A Solid-state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US4316205A
公开(公告)日：1982-02-16
申请号：US119383
申请日：1980-02-07
申请人： Masakazu Aoki , Iwao Takemoto , Masaharu Kubo , Ryuichi Izawa
发明人： Masakazu Aoki , Iwao Takemoto , Masaharu Kubo , Ryuichi Izawa
IPC分类号： H01L27/146 , H01L31/113 , H04N5/335 , H04N5/374 , H01L27/14
CPC分类号： H01L31/1136 , H01L27/14643
摘要： In a solid-state imaging device having in one major surface region of a monolithic semiconductor body, photodiodes which are arrayed in two dimensions, vertical switching MOS transistors and horizontal switching MOS transistors which address the photodiodes, MOS transistors which constitute vertical and horizontal scanning circuits for turning "on" and "off" the switching MOS transistors, and MOS transistors which constitute other peripheral circuitry, the photodiodes being constructed of source regions of the vertical switching MOS transistors and the semiconductor body; a solid-state imaging device characterized in that among source and drain regions of the various MOS transistors, the source regions of the vertical switching MOS transistors are lower in the surface impurity concentration and deeper in the junction depth than the other source and drain regions.
摘要翻译：在具有单片半导体主体的一个主表面区域的固态成像装置中，以二维排列的光电二极管，构成光电二极管的垂直开关MOS晶体管和水平开关MOS晶体管，构成垂直和水平扫描电路的MOS晶体管为了使开关MOS晶体管“开”和“关”，构成其它外围电路的MOS晶体管，该光电二极管由垂直开关MOS晶体管和半导体本体的源极区构成; 一种固态成像装置，其特征在于，在各种MOS晶体管的源极和漏极区域中，垂直开关MOS晶体管的源极区域的表面杂质浓度较低，并且结深度比其他源极和漏极区域更深。

16. 发明授权

US4360821A Solid-state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US4360821A
公开(公告)日：1982-11-23
申请号：US66230
申请日：1979-08-13
申请人： Toshihisa Tsukada , Eiichi Maruyama , Toru Baji , Saburo Ataka , Yoshinori Imamura , Akira Sasano , Masaharu Kubo , Norio Koike , Shusaku Nagahara
发明人： Toshihisa Tsukada , Eiichi Maruyama , Toru Baji , Saburo Ataka , Yoshinori Imamura , Akira Sasano , Masaharu Kubo , Norio Koike , Shusaku Nagahara
IPC分类号： H01L27/146 , H01L27/14
CPC分类号： H01L27/14665
摘要： In a solid-state imaging device having a plurality of photosensitive portions and a semiconductor substrate which includes at least scanning means for scanning the photosensitive portions, the photosensitive portions including a layer of a photosensitive material overlying the semiconductor substrate and a transparent electrically conductive film overlying the photosensitive material layer; a solid-state imaging device characterized in that the photosensitive material is an amorphous material whose indispensable constituent is silicon and which contains hydrogen. The hydrogen content of the photosensitive material is preferably 5 atomic-% to 30 atomic-%, especially 10 atomic-% to 25 atomic-%.
摘要翻译：在具有多个感光部分的固态成像装置和至少包括用于扫描感光部分的扫描装置的半导体衬底上，感光部分包括覆盖在半导体衬底上的感光材料层和覆盖着透明导电膜的透明导电膜感光材料层; 一种固态成像装置，其特征在于感光材料是不可缺少的成分是硅并且含有氢的无定形材料。感光材料的氢含量优选为5原子％至30原子％，特别是10原子％至25原子％。

17. 发明授权

US4242694A Solid-state color imaging device 失效
标题翻译：固态彩色成像装置
公开(公告)号：US4242694A
公开(公告)日：1980-12-30
申请号：US832676
申请日：1977-09-12
申请人： Norio Koike , Masaharu Kubo
发明人： Norio Koike , Masaharu Kubo
IPC分类号： H04N9/07 , H01L27/108 , H01L27/148 , H04N1/04 , H01L27/14 , H01L29/78 , H01L31/00
CPC分类号： H01L27/14843 , H01L27/108 , H01L27/14812
摘要： A solid-state color imaging device contains semiconductive photoelectric elements for light of the respective primary colors, and means for sequentially transmitting charges as electric signals, the charges having been generated and stored according to the quantities of the corresponding primary color light beams received by the photoelectric elements. Transparent conductive films are provided through transparent insulating films on the light receiving sides of the photoelectric elements for at least two primary color light beams, and the charge storage capacitances of the respective photoelectric elements or the ratios of the quantities of light actually reaching photoelectric transduction portions to the entering quantities of the corresponding primary color light beam in the respective photoelectric elements are set at predetermined values.
摘要翻译：固体彩色成像装置包含用于各种原色光的半导体光电元件，以及用于依次将电荷作为电信号传输的装置，电荷根据由所述原色接收的相应原色光束的量而被生成和存储光电元件。透明导电膜通过用于至少两个原色光束的光电元件的光接收侧上的透明绝缘膜提供，并且各个光电元件的电荷存储电容或实际到达光电转换部分的光量比将相应的光电元件中的相应原色光束的输入量设定为预定值。

18. 发明授权

US4177391A Charge transfer semiconductor device 失效
标题翻译：电荷转移半导体器件
公开(公告)号：US4177391A
公开(公告)日：1979-12-04
申请号：US649746
申请日：1976-01-16
申请人： Hideo Sunami , Masaharu Kubo , Iwao Takemoto
发明人： Hideo Sunami , Masaharu Kubo , Iwao Takemoto
IPC分类号： G11C19/28 , H01L27/105 , H01L29/78
CPC分类号： H01L27/1057 , G11C19/287
摘要： A charge transfer semiconductor device has the input signals of charge carriers divided successively; the successively divided input signals are transferred by more than two charge transfer semiconductor elements successively, and transferred input signals are successively combined and detected, whereby a high speed transferring operation of the input signals is accomplished.
摘要翻译：电荷转移半导体器件依次分配电荷载流子的输入信号; 连续分割的输入信号依次由两个以上的电荷转移半导体元件传送，并且传送的输入信号被连续地组合和检测，从而实现输入信号的高速传输操作。

19. 发明授权

US4143389A Photoelectric element in a solid-state image pick-up device 失效
标题翻译：光电元件在固态图像拾取器件中
公开(公告)号：US4143389A
公开(公告)日：1979-03-06
申请号：US823646
申请日：1977-08-11
申请人： Norio Koike , Masaharu Kubo
发明人： Norio Koike , Masaharu Kubo
IPC分类号： H01L27/146 , H01L31/113 , H04N5/335 , H04N5/374 , H01L27/14
CPC分类号： H01L31/1136 , H01L27/14643
摘要： In a solid-state image pickup device having photoelectric elements each of which includes one or more switching MOS field-effect transistors and which are arrayed in one dimension or two dimensions on one semiconductor substrate, and scanning circuits which address the photoelectric devices time-sequentially, a transparent or semitransparent electrode is disposed over a light detecting region provided for the switching field-effect transistor, with an insulating oxide film intervening therebetween, whereby a capacitance is formed between the electrode and the substrate, charges generated under the electrode by photoexcitation are stored in a charge-storage region including the capacitance for a certain time, and the stored charges are taken out by the scanning circuits to a signal output line connecting the drains of the transistors in common.

20. 发明授权

US07138722B2 Semiconductor device 有权
公开(公告)号：US07138722B2
公开(公告)日：2006-11-21
申请号：US11057495
申请日：2005-02-15
申请人： Toshio Miyamoto , Asao Nishimura , Koki Noguchi , Satoshi Michishita , Masashi Horiguchi , Masaharu Kubo , Kazuyoshi Shiba
发明人： Toshio Miyamoto , Asao Nishimura , Koki Noguchi , Satoshi Michishita , Masashi Horiguchi , Masaharu Kubo , Kazuyoshi Shiba
IPC分类号： H01L23/48
CPC分类号： H01L24/50 , H01L23/49572 , H01L23/49816 , H01L24/06 , H01L24/45 , H01L24/48 , H01L25/0657 , H01L25/105 , H01L27/10897 , H01L2224/0401 , H01L2224/04042 , H01L2224/06136 , H01L2224/16245 , H01L2224/451 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2225/1029 , H01L2225/1035 , H01L2225/1058 , H01L2225/107 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01021 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01055 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/12033 , H01L2924/13091 , H01L2924/14 , H01L2924/1433 , H01L2924/15311 , H01L2924/15312 , H01L2924/15331 , H01L2924/181 , H01L2924/19041 , H01L2924/3011 , H01L2924/3511 , H01L2924/00015 , H01L2224/05599 , H01L2924/00 , H01L2924/00012
摘要： Described herein is a stacked package according to the present invention, wherein a plurality of tape carriers which seal semiconductor chips, are multilayered in upward and downward directions. In the stacked package, one ends of leads formed over the whole surfaces of each tape carrier are electrically connected to their corresponding connecting terminals of the semiconductor chip. Other ends of the leads are electrically connected to their corresponding through holes defined in the tape carrier. Connecting terminals common to the plurality of semiconductor chips are formed at the same places of the plurality of tape carriers and withdrawn to the same external connecting terminals through a plurality of mutually-penetrated through holes.

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