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11. 发明授权

US07969693B2 Tunnel magnetoresistive sensor in which at least part of pinned layer is composed of CoFeB layer and method for manufacturing the tunnel magnetoresistive sensor 有权
标题翻译：隧道磁阻传感器，其中至少部分被钉扎层由CoFeB层组成，隧道磁阻传感器的制造方法
公开(公告)号：US07969693B2
公开(公告)日：2011-06-28
申请号：US11857921
申请日：2007-09-19
申请人： Kazuaki Ikarashi , Eiji Umetsu , Kenichi Tanaka , Kazumasa Nishimura , Masamichi Saito , Yosuke Ide , Ryo Nakabayashi , Yoshihiro Nishiyama , Hidekazu Kobayashi , Naoya Hasegawa
发明人： Kazuaki Ikarashi , Eiji Umetsu , Kenichi Tanaka , Kazumasa Nishimura , Masamichi Saito , Yosuke Ide , Ryo Nakabayashi , Yoshihiro Nishiyama , Hidekazu Kobayashi , Naoya Hasegawa
IPC分类号： G11B5/39
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B5/3906 , G11B5/3909 , G11C11/16 , H01F10/132 , H01F10/3254 , H01F41/302 , H01L43/12
摘要： A tunnel magnetoresistive sensor includes a pinned magnetic layer, an insulating barrier layer formed of Mg—O, and a free magnetic layer. A barrier-layer-side magnetic sublayer constituting at least part of the pinned magnetic layer and being in contact with the insulating barrier layer includes a first magnetic region formed of CoFeB or FeB and a second magnetic region formed of CoFe or Fe. The second magnetic region is disposed between the first magnetic region and the insulating barrier layer.
摘要翻译：隧道磁阻传感器包括钉扎磁性层，由Mg-O形成的绝缘阻挡层和自由磁性层。构成被钉扎磁性层的至少一部分并与绝缘阻挡层接触的阻挡层侧磁性子层包括由CoFeB或FeB形成的第一磁性区域和由CoFe或Fe形成的第二磁性区域。第二磁性区域设置在第一磁性区域和绝缘阻挡层之间。

12. 发明申请

US20080285180A1 MAGNETIC SENSING ELEMENT AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：磁感应元件及其制造方法
公开(公告)号：US20080285180A1
公开(公告)日：2008-11-20
申请号：US12120887
申请日：2008-05-15
申请人： Kenichi Tanaka , Eiji Umetsu , Kazuaki Ikarashi , Kota Asatsuma , Norimasa Okanishi , Yoshihiro Nishiyama , Masamichi Saito , Yosuke Ide , Kazumasa Nishimura , Ryo Nakabayashi , Hidekazu Kobayashi , Akio Hanada , Naoya Hasegawa
发明人： Kenichi Tanaka , Eiji Umetsu , Kazuaki Ikarashi , Kota Asatsuma , Norimasa Okanishi , Yoshihiro Nishiyama , Masamichi Saito , Yosuke Ide , Kazumasa Nishimura , Ryo Nakabayashi , Hidekazu Kobayashi , Akio Hanada , Naoya Hasegawa
IPC分类号： G11B5/33 , B05D5/12
CPC分类号： G01R33/093 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/3906 , G11B5/3909 , H01F10/30 , H01F10/3254 , H01F10/3277 , H01F41/302 , H01L43/08 , H01L43/12
摘要： An underlying layer is composed of Co—Fe—B that is an amorphous magnetic material. Thus, the upper surface of the underlying layer can be taken as a lower shield layer-side reference position for obtaining a gap length (GL) between upper and lower shields, resulting in a narrower gap than before. In addition, since the underlying layer has an amorphous structure, the underlying layer does not adversely affect the crystalline orientation of individual layers to be formed thereon, and the surface of the underlying layer has good planarizability. Accordingly, PW50 (half-amplitude pulse width) and SN ratio can be improved more than before without causing a decrease in rate of change in resistance (Δ R/R) or the like, thereby achieving a structure suitable for increasing recording density.
摘要翻译：下层由作为非晶磁性材料的Co-Fe-B组成。因此，可以将下层的上表面作为下屏蔽层侧参考位置，以获得上屏蔽和下屏蔽之间的间隙长度（GL），导致与之前的间隙较窄。此外，由于底层具有非晶结构，所以下层不会对要在其上形成的各层的结晶取向产生不利影响，并且下层的表面具有良好的平坦化性。因此，可以比以前更多地改善PW50（半幅度脉冲宽度）和SN比，而不会导致电阻变化率（ΔR/ R）等的降低，从而实现适于提高记录密度的结构。

13. 发明授权

US07443635B2 Magnetic detector including antiferromagnetic layer, amorphous barrier layer, base layer, and hard layer arranged in that order and method for manufacturing magnetic detector 失效
标题翻译：磁性检测器，包括反铁磁性层，非晶形阻挡层，基层，以及按顺序布置的硬质层以及用于制造磁检测器的方法
公开(公告)号：US07443635B2
公开(公告)日：2008-10-28
申请号：US11249751
申请日：2005-10-04
申请人： Kenichi Tanaka , Eiji Umetsu , Masahiro Oshima , Naoya Hasegawa
发明人： Kenichi Tanaka , Eiji Umetsu , Masahiro Oshima , Naoya Hasegawa
IPC分类号： G11B5/39
CPC分类号： H01F10/3277 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3932 , H01F10/187 , H01F41/308 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048
摘要： A multilayer film is placed on a subatrate. The multilayer film includes an antiferromagnetic layer, a pinned magnetic layer, a non-magnetic material layer, and a free magnetic layer. The multilayer film has recessed sections arranged in both side regions thereof, the recessed sections being formed by partly removing the multilayer film in a vacuum. The bottoms of the recessed sections are located between the upper face and lower face of the antiferromagnetic layer. Amorphous barrier layers with a thickness of Å are placed on the bottoms of the recessed sections, the amorphous barrier layers being formed in the same vacuum as that for forming the recessed sections sequentially to the step of forming the recessed sections.
摘要翻译：将多层膜放置在分层上。多层膜包括反铁磁层，钉扎磁性层，非磁性材料层和自由磁性层。多层膜具有布置在其两侧区域中的凹部，凹部通过在真空中部分去除多层膜而形成。凹陷部分的底部位于反铁磁层的上表面和下表面之间。厚度为10〜32的无定形阻挡层被放置在凹部的底部，与形成凹部的工序相同地形成与用于形成凹部的非晶形阻挡层相同的真空。

14. 发明授权

US07433161B2 Spin-valve element having fixed layer containing nano-oxide layer 失效
标题翻译：旋转阀元件具有含有纳米氧化物层的固定层
公开(公告)号：US07433161B2
公开(公告)日：2008-10-07
申请号：US11034386
申请日：2005-01-12
申请人： Kazuaki Ikarashi , Naoya Hasegawa , Fumihito Koike , Eiji Umetsu
发明人： Kazuaki Ikarashi , Naoya Hasegawa , Fumihito Koike , Eiji Umetsu
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B2005/3996
摘要： A nonmagnetic material-noncontact layer forming a fixed magnetic layer is formed using CoFe, a nonmagnetic material-contact layer is formed using Co, and an NOL (Nano-Oxide Layer) is provided between the nonmagnetic material-noncontact layer and the nonmagnetic material-contact layer. In addition, the average film thickness of the nonmagnetic material-contact layer is set in the range of 16 to 19 Å. Accordingly, compared to a three-layered structure composed of CoFe, an NOL, and CoFe or a three-layered structure composed of Co, an NOL, and Co, which has been conventionally used, the rate (ΔR/R) of change in resistance and the unidirectional exchange bias magnetic field (Hex*) can both be improved.
摘要翻译：使用CoFe形成形成固定磁性层的非磁性材料非接触层，使用Co形成非磁性材料接触层，在非磁性材料 - 非接触层和非磁性材料 - 非接触层之间设置NOL（纳米氧化物层）接触层。此外，非磁性材料接触层的平均膜厚设定在16〜19的范围内。因此，与通常使用的CoFe，NOL，CoFe或由Co，NOL，Co构成的三层结构体构成的三层结构相比，变化率（ΔR/ R）电阻和单向交流偏置磁场（Hex *）都可以提高。

15. 发明申请

US20080145523A1 SPIN-VALVE ELEMENT HAVING FIXED LAYER CONTAINING NANO-OXIDE LAYER 审中-公开
标题翻译：具有包含纳米氧化层的固定层的旋转阀元件
公开(公告)号：US20080145523A1
公开(公告)日：2008-06-19
申请号：US12033272
申请日：2008-02-19
申请人： Kazuaki Ikarashi , Naoya Hasegawa , Fumihito Koike , Eiji Umetsu
发明人： Kazuaki Ikarashi , Naoya Hasegawa , Fumihito Koike , Eiji Umetsu
IPC分类号： B05D5/12
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B2005/3996
摘要： A nonmagnetic material-noncontact layer forming a fixed magnetic layer is formed using CoFe, a nonmagnetic material-contact layer is formed using Co, and an NOL (Nano-Oxide Layer) is provided between the nonmagnetic material-noncontact layer and the nonmagnetic material-contact layer. In addition, the average film thickness of the nonmagnetic material-contact layer is set in the range of 16 to 19 Å. Accordingly, compared to a three-layered structure composed of CoFe, an NOL, and CoFe or a three-layered structure composed of Co, an NOL, and Co, which has been conventionally used, the rate (ΔR/R) of change in resistance and the unidirectional exchange bias magnetic field (Hex*) can both be improved.
摘要翻译：使用CoFe形成形成固定磁性层的非磁性材料非接触层，使用Co形成非磁性材料接触层，在非磁性材料 - 非接触层和非磁性材料 - 非接触层之间设置NOL（纳米氧化物层）接触层。此外，非磁性材料接触层的平均膜厚设定在16〜19的范围内。因此，与通常使用的CoFe，NOL，CoFe或由Co，NOL，Co构成的三层结构体构成的三层结构相比，变化率（ΔR/ R）电阻和单向交流偏置磁场（Hex *）都可以提高。

16. 发明授权

US07362546B2 Spin-valve magnetoresistive element having fixed magnetic layer of epitaxal laminate including magnetic layer and nonmagnetic layer 有权
标题翻译：旋转阀磁阻元件具有包含磁性层和非磁性层的上层叠层的固定磁性层
公开(公告)号：US07362546B2
公开(公告)日：2008-04-22
申请号：US10925268
申请日：2004-08-24
申请人： Naoya Hasegawa , Eiji Umetsu , Masamichi Saito , Yosuke Ide , Masahiro Oshima
发明人： Naoya Hasegawa , Eiji Umetsu , Masamichi Saito , Yosuke Ide , Masahiro Oshima
IPC分类号： G11B5/39 , G11B5/127
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3906 , Y10T29/49034 , Y10T428/1121 , Y10T428/1143
摘要： A fixed magnetic layer contains a first magnetic layer formed on a non-magnetic metal layer. The non-magnetic metal layer is composed of an X—Mn alloy (where X is selected from Pt, Pd, Ir, Rh, Ru, Os, Ni, and Fe). While atoms forming the first magnetic layer and atoms forming the non-magnetic metal layer are being aligned with each other, strains are generated in the individual crystal structures. By generating the strain in the crystal structure of the first magnetic layer, the magnetostriction constant λ is increased. As a result, a magnetic sensor having a large magnetoelastic effect can be provided.
摘要翻译：固定磁性层包含形成在非磁性金属层上的第一磁性层。非磁性金属层由X-Mn合金（其中X选自Pt，Pd，Ir，Rh，Ru，Os，Ni和Fe）组成。虽然形成第一磁性层的原子和形成非磁性金属层的原子彼此对准，但在各个晶体结构中产生应变。通过在第一磁性层的晶体结构中产生应变，磁致伸缩常数λ增加。结果，可以提供具有大的磁弹性效应的磁传感器。

17. 发明授权

US07312960B2 Magnetic sensing element comprising a pinned magnetic layer, a free magnetic layer, and a nonmagnetic conductive layer disposed therebetween 失效
标题翻译：磁感测元件包括钉扎磁性层，自由磁性层和设置在它们之间的非磁性导电层
公开(公告)号：US07312960B2
公开(公告)日：2007-12-25
申请号：US11072079
申请日：2005-03-03
申请人： Kazumi Matsuzaka , Eiji Umetsu , Naoya Hasegawa
发明人： Kazumi Matsuzaka , Eiji Umetsu , Naoya Hasegawa
IPC分类号： G11B5/39
CPC分类号： B82Y10/00 , G11B5/3903 , H01F10/3277
摘要： A magnetic sensing element is provided in which the magnetization of a pinned magnetic layer is pinned by a uniaxial anisotropy of the pinned magnetic layer itself. A nonmagnetic layer for increasing the coercive force of the pinned magnetic layer is disposed adjacent to the pinned magnetic layer at the opposite side of a nonmagnetic conductive layer. Specifically, the nonmagnetic layer is composed of, for example, Cu. In addition, the thickness of the nonmagnetic layer is adequately controlled.
摘要翻译：提供了一种磁敏元件，其中被钉扎的磁性层的磁化被钉扎的磁性层本身的单轴各向异性固定。用于增加被钉扎磁性层的矫顽力的非磁性层与非磁性导电层的相对侧的被钉扎的磁性层相邻设置。具体地说，非磁性层由例如Cu构成。此外，非磁性层的厚度被充分地控制。

18. 发明授权

US07312959B2 Magnetic sensor having antiferromagnetic layers and free magnetic layer and method for manufacturing magnetic sensor 失效
标题翻译：具有反铁磁层和自由磁性层的磁传感器及其制造方法
公开(公告)号：US07312959B2
公开(公告)日：2007-12-25
申请号：US10946323
申请日：2004-09-21
申请人： Ryou Nakabayashi , Eiji Umetsu , Naoya Hasegawa
发明人： Ryou Nakabayashi , Eiji Umetsu , Naoya Hasegawa
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/332
摘要： At two sides of a multilayer film including a free magnetic layer, a first non-magnetic material layer, and a fixed magnetic layer, extension portions extending from the fixed magnetic layer are formed. At lower sides of the extension portions, a pair of first antiferromagnetic layers is formed with a space therebetween in a track width direction, and in addition, at upper sides of the extension portions, a pair of second antiferromagnetic layers is formed with a space therebetween in the track width direction.
摘要翻译：在包括自由磁性层，第一非磁性材料层和固定磁性层的多层膜的两侧形成从固定磁性层延伸的延伸部分。在延伸部分的下侧，一对第一反铁磁性层在轨道宽度方向上形成有间隔，另外在延伸部的上侧形成有一对第二反铁磁性层，在轨道宽度方向。

19. 发明授权

US07310208B2 Magnetoresistive sensor containing self-pinned layer containing a plurality of magnetic sublayers with magnetostriction-enhancing layer made of a nonmagnetic material 有权
标题翻译：含有包含由非磁性材料制成的具有磁致伸缩增强层的多个磁性子层的自固位层的磁阻传感器
公开(公告)号：US07310208B2
公开(公告)日：2007-12-18
申请号：US11156677
申请日：2005-06-20
申请人： Naoya Hasegawa , Masamichi Saito , Eiji Umetsu
发明人： Naoya Hasegawa , Masamichi Saito , Eiji Umetsu
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3906 , G11B2005/3996
摘要： A first magnetic sublayer constituting a pinned magnetic layer is provided in contact with a first magnetostriction-enhancing layer to increase the magnetostriction constant of the first magnetic sublayer. In addition, a nonmagnetic intermediate sublayer constituting the pinned magnetic layer is made of a material having a lattice constant larger than that of Ru, such as a Ru—X alloy, to distort the crystal structures of the first magnetic sublayer and a second magnetic sublayer each in contact with the nonmagnetic intermediate sublayer, increasing the magnetostriction constants of the first magnetic sublayer and the second magnetic sublayer.
摘要翻译：提供构成被钉扎磁性层的第一磁性子层与第一磁致伸缩增强层接触以增加第一磁性子层的磁致伸缩常数。此外，构成被钉扎磁性层的非磁性中间子层由具有大于Ru的晶格常数（例如Ru-X合金）的材料制成，以使第一磁性子层和第二磁性子层的晶体结构变形每个与非磁性中间子层接触，增加第一磁性子层和第二磁性子层的磁致伸缩常数。

20. 发明授权

US07283335B2 Magnetic detecting element 失效
标题翻译：磁性检测元件
公开(公告)号：US07283335B2
公开(公告)日：2007-10-16
申请号：US10430893
申请日：2003-05-06
申请人： Naoya Hasegawa , Eiji Umetsu
发明人： Naoya Hasegawa , Eiji Umetsu
IPC分类号： G11B5/39 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903
摘要： In a magnetic detecting element, ferromagnetic layers are formed on both side portions of a free magnetic layer through nonmagnetic intermediate layers, and second antiferromagnetic layers are formed on the ferromagnetic layers with a spacing greater than the spacing between the ferromagnetic layers in the track width direction. Also, in both side portions of the element, the ferromagnetic layers have portions extending from the inner end surfaces of the respective second antiferromagnetic layers toward the center in the track width direction. Furthermore, electrode layers are formed on the second antiferromagnetic layers and on the extending portions of the ferromagnetic layers. It is thus possible to improve reproduced output, and suppress widening of an effective reproducing track width to appropriately suppress the occurrence of side reading.
摘要翻译：在磁检测元件中，铁磁层通过非磁性中间层形成在自由磁性层的两侧部分上，并且第二反铁磁层形成在铁磁层上，间隔大于轨道宽度方向上的铁磁层之间的间隔。此外，在元件的两侧部分中，铁磁层具有从相应的第二反铁磁层的内端表面朝向轨道宽度方向的中心延伸的部分。此外，电极层形成在第二反铁磁层上和铁磁层的延伸部分上。因此，可以改善再现输出，并且抑制有效再现轨迹宽度的加宽以适当地抑制侧读的发生。

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