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11. 发明申请

US20070070764A1 Memory 有权
标题翻译：记忆
公开(公告)号：US20070070764A1
公开(公告)日：2007-03-29
申请号：US11524273
申请日：2006-09-21
申请人： Hideaki Miyamoto , Shigeharu Matsushita
发明人： Hideaki Miyamoto , Shigeharu Matsushita
IPC分类号： G11C7/00
CPC分类号： G11C11/22
摘要： This memory comprises a first frequency detecting portion detecting access frequencies with respect to a plurality of memory cell blocks respectively, a comparator comparing the access frequencies with respect to the plurality of memory cell blocks detected by the first frequency detecting portion with each other and a refresh portion exercising control for selecting a prescribed memory cell block from among the plurality of memory cell blocks on the basis of comparison data output from the comparator and preferentially rewriting data in the memory cells included in the selected memory cell block.
摘要翻译：该存储器包括分别检测相对于多个存储单元块的存取频率的第一频率检测部分，比较第一频率检测部分检测到的与多个存储单元块相关的存取频率的比较器和刷新基于从比较器输出的比较数据，从多个存储单元块中选择规定的存储单元块的部分运动控制，并优先地重写在所选择的存储单元块中包括的存储单元中的数据。

12. 发明申请

US20070064514A1 Control unit and portable terminal 审中-公开
标题翻译：控制单元和便携式终端
公开(公告)号：US20070064514A1
公开(公告)日：2007-03-22
申请号：US11525010
申请日：2006-09-22
申请人： Hideaki Miyamoto , Shigeharu Matsushita , Shinichiro Okada
发明人： Hideaki Miyamoto , Shigeharu Matsushita , Shinichiro Okada
IPC分类号： G11C5/14
CPC分类号： G11C14/00
摘要： A control unit capable of reliably preventing loss of data also when losing power during data processing is obtained. This control unit comprises a volatile memory temporarily storing data used in the control unit and a nonvolatile memory holding data of the volatile memory, for writing the same data as that written in the volatile memory also in the nonvolatile memory upon occurrence of writing in the volatile memory.
摘要翻译：获得能够可靠地防止在数据处理期间失去电力时数据丢失的控制单元。该控制单元包括临时存储在控制单元中使用的数据的易失性存储器和保存易失性存储器的数据的非易失性存储器，用于在写入易失性存储器时写入与易失性存储器中写入的易失性存储器相同的数据记忆。

13. 发明授权

US06888189B2 Dielectric element including oxide-based dielectric film and method of fabricating the same 有权
标题翻译：包含氧化物基电介质膜的电介质元件及其制造方法
公开(公告)号：US06888189B2
公开(公告)日：2005-05-03
申请号：US09956817
申请日：2001-09-21
申请人： Shigeharu Matsushita , Kazunari Honma
发明人： Shigeharu Matsushita , Kazunari Honma
IPC分类号： H01L27/105 , H01L21/02 , H01L21/314 , H01L21/316 , H01L21/318 , H01L21/8242 , H01L21/8246 , H01L27/108 , H10L27/108
CPC分类号： H01L21/0217 , H01L21/02126 , H01L21/0214 , H01L21/02178 , H01L21/02186 , H01L21/02197 , H01L21/3144 , H01L21/31604 , H01L21/3162 , H01L21/31629 , H01L21/31633 , H01L21/3185 , H01L28/55 , H01L28/75
摘要： A dielectric element capable of effectively suppressing diffusion of oxygen into a region located under a lower electrode in heat treatment for sintering an oxide-based dielectric film is obtained. This dielectric element comprises a lower electrode including a first conductor film having a function of suppressing diffusion of oxygen, a first dielectric film, formed on the lower electrode, including an oxide-based dielectric film, and a first insulator film, arranged on a region other than the lower electrode, having a function of suppressing diffusion of oxygen. Thus, the first conductor film and the first insulator film function as barrier films preventing diffusion of oxygen, whereby the first conductor film effectively prevents oxygen from diffusing downward along grain boundaries of the lower electrode while the first insulator film effectively prevents oxygen from diffusing downward from the region other than the lower electrode in heat treatment for sintering the oxide-based dielectric film.
摘要翻译：得到能够有效地抑制氧化物系电介质膜烧结的热处理中的氧扩散到位于下部电极下方的区域的电介质元件。该电介质元件包括下电极，该下电极包括具有抑制氧扩散功能的第一导体膜，形成在下电极上的包括氧化物类电介质膜的第一电介质膜和布置在区域上的第一绝缘膜除了下部电极之外，具有抑制氧的扩散的功能。因此，第一导体膜和第一绝缘膜用作防止氧扩散的阻挡膜，由此第一导体膜有效地防止氧沿着下电极的晶界向下扩散，而第一绝缘膜有效地防止氧向下扩散在用于烧结氧化物基电介质膜的热处理中除下电极之外的区域。

14. 发明授权

US06617660B2 Field effect transistor semiconductor and method for manufacturing the same 失效
标题翻译：场效应晶体管半导体及其制造方法
公开(公告)号：US06617660B2
公开(公告)日：2003-09-09
申请号：US09391507
申请日：1999-09-08
申请人： Shigeyuki Murai , Emi Fujii , Shigeharu Matsushita , Hisaaki Tominaga
发明人： Shigeyuki Murai , Emi Fujii , Shigeharu Matsushita , Hisaaki Tominaga
IPC分类号： H01L29095
CPC分类号： H01L29/66871 , H01L21/28587 , H01L29/42316 , H01L29/812
摘要： This invention has an objective to provide a field effect transistor semiconductor which has great adhesiveness between a gate metal and an insulating film defining a gate electrode end and to improve production yield thereof. The field effect transistor semiconductor of this invention comprises a source/drain electrode 6 positioned in a predetermined position in a GaAs substrate 1, a channel region provided in the GaAs substrate 1 and between the source/drain electrodes 6, a gate electrode 11 which is in schottky contact with a part of a channel region and is positioned between the source/drain electrodes 6, and an insulating film 7 which electrically insulates a surface of the GaAs substrate and the gate electrode 11 at both side surfaces of the gate electrode 11. The gate electrode 11 covers a part of the insulating film 7 and the surface of the GaAs substrate serving as the channel region, and a bottom metallic layer 8 contained in the gate electrode 11 is covered with a second metallic layer 9 which is highly adhesive to the insulating film 7.
摘要翻译：本发明的目的是提供一种场效应晶体管半导体，其在栅极金属和限定栅电极端的绝缘膜之间具有很大的粘合性，并提高其生产成品率。本发明的场效应晶体管半导体包括源极/漏极 6位于GaAs衬底1中的预定位置，设置在GaAs衬底1中并在源/漏电极6之间的沟道区，与沟道区的一部分肖特基接触并位于源极/漏极6以及绝缘膜7，其将栅极电极11的两个侧表面处的GaAs衬底的表面和栅极电极11电绝缘。栅电极11覆盖绝缘膜7的一部分，并且作为沟道区的GaAs衬底的表面和包含在栅极11中的底部金属层8被第二个元件覆盖与绝缘膜7高度粘合的层9。

15. 发明授权

US07440307B2 Memory 失效
标题翻译：记忆
公开(公告)号：US07440307B2
公开(公告)日：2008-10-21
申请号：US11584491
申请日：2006-10-23
申请人： Yoshiki Murayama , Shigeharu Matsushita
发明人： Yoshiki Murayama , Shigeharu Matsushita
IPC分类号： G11C11/22
CPC分类号： G11C11/22 , G11C11/223 , G11C11/5657
摘要： This memory comprises a bit line, a first word line and a second word line arranged to intersect with the bit line while holding the bit line therebetween and a first ferroelectric film and a second ferroelectric film, having capacitances different from each other, arranged between the bit line and the first word line and between the bit line and the second word line respectively at least on a region where the bit line and the first and second word lines intersect with each other. The bit line, the first word line and the first ferroelectric film constitute a first ferroelectric capacitor while the bit line, the second word line and the second ferroelectric film constitute a second ferroelectric capacitor, and the first ferroelectric capacitor and the second ferroelectric capacitor constitute a memory cell.
摘要翻译：该存储器包括位线，第一字线和第二字线，其被布置成在保持位线之间与位线相交并且具有电容彼此不同的第一铁电体膜和第二铁电体膜，第一铁电体膜和第二铁电体膜布置在至少在位线和第一和第二字线彼此相交的区域上分别位于第一字线和第一字线之间以及位线与第二字线之间。位线，第一字线和第一铁电体膜构成第一铁电电容器，而位线，第二字线和第二铁电体膜构成第二铁电电容器，并且第一铁电电容器和第二铁电电容器构成记忆单元

16. 发明授权

US07366004B2 Memory 有权
标题翻译：记忆
公开(公告)号：US07366004B2
公开(公告)日：2008-04-29
申请号：US11328223
申请日：2006-01-10
申请人： Hideaki Miyamoto , Naofumi Sakai , Kouichi Yamada , Shigeharu Matsushita
发明人： Hideaki Miyamoto , Naofumi Sakai , Kouichi Yamada , Shigeharu Matsushita
IPC分类号： G11C11/22
CPC分类号： G11C11/22
摘要： A memory capable of suppressing reduction of a reading voltage in data reading regardless of dispersion in a manufacturing process is provided. This memory comprises charge storage means, a first field-effect transistor and data determination means. The memory sets a voltage between a control terminal and a remaining first terminal of the first field-effect transistor to a threshold voltage for bringing the first field-effect transistor into an OFF-state in the vicinity of a boundary state between ON- and OFF-states through the threshold voltage of the first field-effect transistor.
摘要翻译：提供了能够抑制数据读取中的读取电压的降低而不管制造过程中的分散性的存储器。该存储器包括电荷存储装置，第一场效应晶体管和数据确定装置。存储器将第一场效应晶体管的控制端子和剩余的第一端子之间的电压设置为阈值电压，以使第一场效应晶体管处于ON和OFF之间的边界状态附近的截止状态 - 通过第一场效应晶体管的阈值电压。

17. 发明申请

US20070047363A1 Memory 有权
标题翻译：记忆
公开(公告)号：US20070047363A1
公开(公告)日：2007-03-01
申请号：US11509057
申请日：2006-08-24
申请人： Hideaki Miyamoto , Shigeharu Matsushita
发明人： Hideaki Miyamoto , Shigeharu Matsushita
IPC分类号： G11C5/14
CPC分类号： G11C11/22
摘要： A memory capable of preventing a memory cell from disappearance of data resulting from accumulated disturbances is obtained. This memory comprises a nonvolatile memory cell and a refresh portion for rewriting data in the memory cell. The refresh portion reads and rewrites data from and in the memory cell in a power-down state.
摘要翻译：获得能够防止存储器单元从累积干扰导致的数据消失的存储器。该存储器包括非易失性存储器单元和用于重写存储单元中的数据的刷新部分。刷新部分在掉电状态下读取和重写来自存储器单元的数据。

18. 发明申请

US20060164877A1 Memory 有权
标题翻译：记忆
公开(公告)号：US20060164877A1
公开(公告)日：2006-07-27
申请号：US11328223
申请日：2006-01-10
申请人： Hideaki Miyamoto , Naofumi Sakai , Kouichi Yamada , Shigeharu Matsushita
发明人： Hideaki Miyamoto , Naofumi Sakai , Kouichi Yamada , Shigeharu Matsushita
IPC分类号： G11C11/22
CPC分类号： G11C11/22
摘要： A memory capable of suppressing reduction of a reading voltage in data reading regardless of dispersion in a manufacturing process is provided. This memory comprises charge storage means, a first field-effect transistor and data determination means. The memory sets a voltage between a control terminal and a remaining first terminal of the first field-effect transistor to a threshold voltage for bringing the first field-effect transistor into an OFF-state in the vicinity of a boundary state between ON- and OFF-states through the threshold voltage of the first field-effect transistor.
摘要翻译：提供了能够抑制数据读取中的读取电压的降低而不管制造过程中的分散性的存储器。该存储器包括电荷存储装置，第一场效应晶体管和数据确定装置。存储器将第一场效应晶体管的控制端子和剩余的第一端子之间的电压设置为阈值电压，以使第一场效应晶体管处于ON和OFF之间的边界状态附近的截止状态 - 通过第一场效应晶体管的阈值电压。

19. 发明授权

US06930906B2 Ferroelectric memory and operating method therefor, and memory device 有权
标题翻译：铁电存储器及其操作方法及存储器件
公开(公告)号：US06930906B2
公开(公告)日：2005-08-16
申请号：US10387869
申请日：2003-03-14
申请人： Shigeharu Matsushita , Yoh Takano , Satoru Sekine
发明人： Shigeharu Matsushita , Yoh Takano , Satoru Sekine
IPC分类号： G11C11/22
CPC分类号： G11C11/22
摘要： A ferroelectric memory capable of improving disturbance resistance in a non-selected memory cell includes a bit line, a word line arranged to intersect with the bit line, and a memory cell, which is arranged between the bit line and the word line an includes a ferroelectric capacitor and a diode serially connected to the ferroelectric capacitor. Thus, when a voltage in a range hardly feeding a current to the diode is applied to a non-selected cell in data writing or data reading, substantially no voltage is applied to the ferroelectric capacitor.
摘要翻译：能够提高未选择存储单元中的抗干扰性的铁电存储器包括位线，布置成与位线相交的字线以及布置在位线和字线a之间的存储单元，包括：铁电电容器和串联连接到铁电电容器的二极管。因此，当在数据写入或数据读取中向非选择单元施加难以向二极管供给电流的范围内的电压时，基本上不向铁电体电容器施加电压。

20. 发明授权

US6100547A Field effect type semiconductor device and method of fabricating the same 失效
标题翻译：场效应型半导体器件及其制造方法
公开(公告)号：US6100547A
公开(公告)日：2000-08-08
申请号：US113386
申请日：1998-07-10
申请人： Shigeharu Matsushita
发明人： Shigeharu Matsushita
IPC分类号： H01L29/43 , H01L21/28 , H01L21/285 , H01L21/338 , H01L29/47 , H01L29/812 , H01L27/085
CPC分类号： H01L21/28581 , H01L29/475 , H01L29/8128
摘要： A first electrode layer composed of Pt is formed on an operating layer, and a second electrode layer composed of a material which is different from Pt is formed on the operating layer so as to cover the first electrode layer. A buried electrode layer composed of Pt is formed in the operating layer under the first electrode layer. The first electrode layer, the second electrode layer and the buried electrode layer constitute a gate electrode.
摘要翻译：在工作层上形成由Pt构成的第一电极层，在工作层上形成由与Pt不同的材料构成的第二电极层，以覆盖第一电极层。在第一电极层下方的工作层中形成由Pt构成的掩埋电极层。第一电极层，第二电极层和掩埋电极层构成栅电极。

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