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    • 17. 发明授权
    • Thermotropic chiral nematic liquid crystalline copolymers
    • 热致度手性向列型液晶共聚物
    • US5332522A
    • 1994-07-26
    • US55120
    • 1993-04-29
    • Shaw H. ChenJohn C. MastrangeloHongqin ShiSushil Krishnamurthy
    • Shaw H. ChenJohn C. MastrangeloHongqin ShiSushil Krishnamurthy
    • C08F220/30C08F220/36C08F220/38C09K19/38C09K19/52C09K19/12C09K19/30G02F1/13
    • C09K19/3857C08F220/30C08F220/36C08F220/38C09K19/3852
    • A thermotropic chiral nematic liquid crystalline copolymer composition comprises ##STR1## wherein --NEM-- and --NEM'-- are each independently nematogenic units of formula ##STR2## wherein R is H or CH.sub.3, --Q-- is an alkylene radical having 1 to about 8 carbon atoms,--X-- is --O--, --S--, or --CH.sub.2 --, --Y-- is ##STR3## --Z is --CN, --NO.sub.2 or --N.dbd.C.dbd.S, q and r are each independently 0 or 1;wherein --CHI-- is a chiral unit of formula ##STR4## wherein R is H or CH.sub.3, --Q'-- is an alkylene radical having 1 to about 8 carbon atoms,--X'-- is --O--, --S--, or --CH.sub.2 --,--Z' is an alkoxy, aralkoxy, alkylamino, or aralkylamino radical having 4 to about 12 carbon atoms and containing at least one asymmetric carbon atom,q' and r' are each independently 0 or 1;and wherein x is the mole fraction of chiral units and (y+y') is the total mole fraction of nematogenic units in said copolymer composition, and the ratio of x to (y+y') is from about 1:50 to 1:1.This compolymer composition is employed to form an optical device.
    • 热致的手性向列型液晶共聚物组合物包含其中-NEM-和-NEM'-各自独立地具有式(II)的制剂单元,其中R是H或CH 3,-Q-是亚烷基 具有1至约8个碳原子的基团,-X-为-O-,-S-或-CH 2 - , - Y - 为-CN,-NO 2或-N = C = S,q 和r各自独立地为0或1; 其中-CHI-是式(III)的手性单元,其中R是H或CH 3,-Q'是具有1至约8个碳原子的亚烷基,-X'是-O-,-S - 或-CH 2 - , - Z'是具有4至约12个碳原子并含有至少一个不对称碳原子的烷氧基,芳烷氧基,烷基氨基或芳烷基氨基,q'和r'各自独立地为0或1; 并且其中x是手性单元的摩尔分数,并且(y + y')是所述共聚物组合物中的引产单元的总摩尔分数,并且x与(y + y')的比率为约1:50至1 :1。 该共聚物组合物用于形成光学装置。
    • 20. 发明授权
    • Etching method in fabrications of microstructures
    • 微观结构的蚀刻方法
    • US06939472B2
    • 2005-09-06
    • US10665998
    • 2003-09-17
    • Gregory P. SchaadtHongqin Shi
    • Gregory P. SchaadtHongqin Shi
    • B01D20060101C23F1/00G01R31/00H01L21/00H01L21/302H01L21/461
    • B81C1/00595B81C2201/0132
    • The present invention teaches a method and apparatus for removing sacrificial materials in fabrications of microstructures using one or more selected spontaneous vapor phase etchants. The selected etchant is fed into an etch chamber containing the microstructure during each feeding cycle of a sequence of feeding cycles until the sacrificial material of the microstructure is exhausted through the chemical reaction between the etchant and the sacrificial material. Specifically, during a first feeding cycle, a first amount of selected spontaneous vapor phase etchant is fed into the etch chamber. At a second feeding cycle, a second amount of the etchant is fed into the etch chamber. The first amount and the second amount of the selected etchant may or may not be the same. The time duration of the feeding cycles are individually adjustable.
    • 本发明教导了使用一种或多种选择的自发气相蚀刻剂去除微结构制造中的牺牲材料的方法和装置。 所选择的蚀刻剂在进料循环序列的每个进料循环期间被送入包含微结构的蚀刻室,直到微结构的牺牲材料通过蚀刻剂和牺牲材料之间的化学反应排出。 具体地,在第一进料循环期间,将第一量的选择的自发气相蚀刻剂送入蚀刻室。 在第二进料循环中,将第二量的蚀刻剂送入蚀刻室。 所选择的蚀刻剂的第一量和第二量可以相同也可以不相同。 进料周期的持续时间可单独调节。