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11. 发明申请

US20080217713A1 TWO-DIMENSIONAL SEMICONDUCTOR DETECTOR HAVING MECHANICALLY AND ELECTRICALLY JOINED SUBSTRATES 审中-公开
标题翻译：具有机械和电接合基板的二维半导体探测器
公开(公告)号：US20080217713A1
公开(公告)日：2008-09-11
申请号：US11775678
申请日：2007-07-10
申请人： Satoshi Tokuda , Hiroyuki Kishihara
发明人： Satoshi Tokuda , Hiroyuki Kishihara
IPC分类号： H01L31/18 , H01L31/00
CPC分类号： H01L29/7869 , H01L27/12 , H01L27/14658 , H01L27/14659 , H01L31/115
摘要： The present invention relates to an industrial or medical radiation detector and a radiation imaging device equipped with the same. More specifically, the present invention relates to a technology for improving the detection properties and production efficiency for radiation detectors. The invention in claim 1 includes: a conductive support substrate; a semiconductor sensitivity film stacked onto the support substrate and generating a carrier (electron, positive hole) in response to an item to be detected; and means for reading equipped with an element for accumulating and reading the carrier generated by the semiconductor sensitivity film.
摘要翻译：本发明涉及一种工业或医疗放射线检测器及其配备的放射线成像装置。更具体地说，本发明涉及用于提高放射线检测器的检测特性和生产效率的技术。权利要求1中的发明包括：导电支撑基板; 半导体敏感膜层叠在所述支撑基板上，并且响应于要检测的物品产生载流子（电子，空穴）; 以及装备有用于累积和读取由半导体敏感膜产生的载体的元件的读取装置。

12. 发明授权

US07301155B2 Radiation detector and radiation imaging apparatus and method for producing radiation detector 有权
标题翻译：辐射检测器和辐射成像装置及其制造方法
公开(公告)号：US07301155B2
公开(公告)日：2007-11-27
申请号：US10691637
申请日：2003-10-24
申请人： Satoshi Tokuda , Hiroyuki Kishihara
发明人： Satoshi Tokuda , Hiroyuki Kishihara
IPC分类号： G01T1/24
CPC分类号： G01T1/24 , H01L27/14676 , H01L27/14683
摘要： A radiation detector provided in a substrate with a detection layer which is sensitive to radiation, the detector being characterized in that said detection layer is formed by a polycrystal film comprising either one of CdTe (cadmium telluride), ZnTe (zinc telluride) and CdZnTe (cadmium zinc telluride) or a laminate film of polycrystal including at least one thereof, and is doped with Cl.
摘要翻译：一种辐射检测器，在基板上设置有对辐射敏感的检测层，检测器的特征在于，所述检测层由包含CdTe（碲化镉），ZnTe（碲化锌）和CdZnTe（碲化镉）之一的多晶膜形成，碲化锌镉）或其中至少一种的多晶体的层压膜，并掺杂有Cl。

13. 发明申请

US20120033110A1 LIGHT OR RADIATION IMAGE PICKUP APPARATUS 有权
标题翻译：光或辐射图像拾取装置
公开(公告)号：US20120033110A1
公开(公告)日：2012-02-09
申请号：US13265064
申请日：2009-04-24
申请人： Koichi Tanabe , Hiroyuki Kishihara
发明人： Koichi Tanabe , Hiroyuki Kishihara
IPC分类号： H04N9/64
CPC分类号： H04N5/361 , A61B6/585 , G01T1/17 , H04N5/32 , H04N5/3742 , H04N5/378
摘要： The radiation image pickup apparatus of this invention can obtain an accurate temperature characteristic of dark current noise, the dark current noise being caused by dark current flowing through an X-ray conversion layer, by obtaining dark image signals at varied times for accumulating in capacitors charge signals converted by an X-ray converting layer. Consequently, the noise due to the dark current can be removed with high accuracy by removing periodically acquired offset signals from X-ray detection signals acquired at a time of X-ray image pickup, and correcting variations of the dark current noise due to a difference in temperature between a time of offset signal acquisition and the time of X-ray image pickup, using the temperature characteristic of the dark current noise.
摘要翻译：本发明的放射线摄像装置可以获得暗电流噪声的精确温度特性，暗电流噪声是由流过X射线转换层的暗电流引起的，通过获得在电容器电荷积累的变化时间的暗图像信号由X射线转换层转换的信号。因此，通过从X射线摄像时获取的X射线检测信号中去除周期性地获取的偏移信号，可以高精度地去除由于暗电流引起的噪声，并且校正由于差异引起的暗电流噪声的变化使用暗电流噪声的温度特性，在偏移信号获取时间与X射线摄像时间之间的温度。

14. 发明授权

US08760544B2 Light or radiation image pickup apparatus 有权
标题翻译：光或辐射摄像装置
公开(公告)号：US08760544B2
公开(公告)日：2014-06-24
申请号：US13265064
申请日：2009-04-24
申请人： Koichi Tanabe , Hiroyuki Kishihara
发明人： Koichi Tanabe , Hiroyuki Kishihara
IPC分类号： G01T1/24 , H04N9/64
CPC分类号： H04N5/361 , A61B6/585 , G01T1/17 , H04N5/32 , H04N5/3742 , H04N5/378
摘要： The radiation image pickup apparatus of this invention can obtain an accurate temperature characteristic of dark current noise, the dark current noise being caused by dark current flowing through an X-ray conversion layer, by obtaining dark image signals at varied times for accumulating in capacitors charge signals converted by an X-ray converting layer. Consequently, the noise due to the dark current can be removed with high accuracy by removing periodically acquired offset signals from X-ray detection signals acquired at a time of X-ray image pickup, and correcting variations of the dark current noise due to a difference in temperature between a time of offset signal acquisition and the time of X-ray image pickup, using the temperature characteristic of the dark current noise.
摘要翻译：本发明的放射线摄像装置可以获得暗电流噪声的精确温度特性，暗电流噪声是由流过X射线转换层的暗电流引起的，通过获得在电容器电荷积累的变化时间的暗图像信号由X射线转换层转换的信号。因此，通过从X射线摄像时获取的X射线检测信号中去除周期性地获取的偏移信号，可以高精度地去除由于暗电流引起的噪声，并且校正由于差异引起的暗电流噪声的变化使用暗电流噪声的温度特性，在偏移信号获取时间与X射线摄像时间之间的温度。

15. 发明授权

US06674081B2 Infrared detecting element, infrared two-dimensional image sensor, and method of manufacturing the same 失效
标题翻译：红外线检测元件，红外二维图像传感器及其制造方法
公开(公告)号：US06674081B2
公开(公告)日：2004-01-06
申请号：US10251953
申请日：2002-09-23
申请人： Kazuhiko Hashimoto , Tomonori Mukaigawa , Ryuichi Kubo , Hiroyuki Kishihara , Minoru Noda , Masanori Okuyama
发明人： Kazuhiko Hashimoto , Tomonori Mukaigawa , Ryuichi Kubo , Hiroyuki Kishihara , Minoru Noda , Masanori Okuyama
IPC分类号： G01J500
CPC分类号： H01L37/02 , G01J5/34 , H01L27/16
摘要： An infrared detecting capacitor formed of a ferroelectric film has its capacitor portion supported by first and second interconnecting lines to be held on an Si substrate located on both sides of a trench. A lower electrode is coupled with the first interconnecting line while an upper electrode is coupled with the second interconnecting line. The capacitor portion is a rectangle in shape in plan view without small triangular sections opposite to each other in the diagonal direction.
摘要翻译：由铁电体膜形成的红外线检测电容器，其电容器部分由第一和第二互连线支撑，以保持在位于沟槽两侧的Si衬底上。下电极与第一互连线耦合，而上电极与第二互连线耦合。电容器部分是平面图中的矩形，没有在对角线方向上彼此相对的小三角形部分。

16. 发明授权

US06576566B2 Apparatus and method for forming thin film at low temperature and high deposition rate 有权
公开(公告)号：US06576566B2
公开(公告)日：2003-06-10
申请号：US09866869
申请日：2001-05-30
申请人： Kazuhiko Hashimoto , Tomonori Mukaigawa , Ryuichi Kubo , Hiroyuki Kishihara , Tatsuro Usuki , Minoru Noda , Masanori Okuyama
发明人： Kazuhiko Hashimoto , Tomonori Mukaigawa , Ryuichi Kubo , Hiroyuki Kishihara , Tatsuro Usuki , Minoru Noda , Masanori Okuyama
IPC分类号： H01L2131
CPC分类号： H01L21/02197 , C23C14/0021 , C23C14/048 , C23C14/088 , C23C14/28 , H01L21/02266 , H01L21/31691
摘要： A thin film formation apparatus includes a vacuum chamber, a target holding mount held movably in the vacuum chamber, a target containing a film material, an ArF excimer laser for emitting high energy radiation to a surface of the target, an optical system for concentrating the radiation from the excimer laser to the surface of the target, a substrate holding mount holding the substrate, an oxidizing gas inlet for supplying an oxidizing gas into the vacuum chamber for oxidizing a substance deposited on the substrate, a heater placed inside the substrate holding mount for heating the substrate in the vacuum chamber, and a light for irradiating the substrate held on the substrate holding mount with light rays.

17. 发明授权

US5231289A Thermal photodetector and method of manufacturing the same 失效
标题翻译：热像仪及其制造方法
公开(公告)号：US5231289A
公开(公告)日：1993-07-27
申请号：US871771
申请日：1992-04-21
申请人： Jun-ichi Kita , Hiroyuki Kishihara
发明人： Jun-ichi Kita , Hiroyuki Kishihara
IPC分类号： G01J1/02 , G01J5/02 , G01J5/06 , G01J5/34 , H01L37/02
CPC分类号： G01J5/34 , H01L37/02 , G01J5/061
摘要： A thermal photodetector includes a thermal photodetector element and a support stand for supporting the thermal photodetector element. The support stand is made of a material of which heat conduction is relatively small, and is thermally connected to and mounted on a mount of which temperature is controlled to a predetermined temperature. The sizes of the support stand are determined such that the quantity of heat conduction in a heat conduction passage from the thermal photodetector element to the mount is equal to a predetermined quantity. The method of manufacturing this thermal detector includes the steps of exposing, to light, a photosensitive glass plate having a thickness corresponding to the height of a support stand of a thermal photodetector to be manufactured. The light exposure is made with the use of a mask having a shape which corresponds to the shape in transverse section of the support stand. The photosensitive glass plate is adhered to pyroelectric crystal plate provided on one surface thereof with an electrode. The surface of the pyroelectric crystal plate on which the electrode is mounted faces the photosensitive glass plate. The surface of the pyroelectric crystal plate opposite to the adhered surface is polished. The light-sensed portion of the photosensitive glass plate is then removed.

18. 发明授权

US06635495B2 Infrared detecting element, infrared two-dimensional image sensor, and method of manufacturing the same 有权
公开(公告)号：US06635495B2
公开(公告)日：2003-10-21
申请号：US09866881
申请日：2001-05-30
申请人： Kazuhiko Hashimoto , Tomonori Mukaigawa , Ryuichi Kubo , Hiroyuki Kishihara , Minoru Noda , Masanori Okuyama
发明人： Kazuhiko Hashimoto , Tomonori Mukaigawa , Ryuichi Kubo , Hiroyuki Kishihara , Minoru Noda , Masanori Okuyama
IPC分类号： H01L2100
CPC分类号： H01L37/02 , G01J5/34 , H01L27/16
摘要： An infrared detecting capacitor formed of a ferroelectric film has its capacitor portion supported by first and second interconnecting lines to be held on an Si substrate located on both sides of a trench. A lower electrode is coupled with the first interconnecting line while an upper electrode is coupled with the second interconnecting line. The capacitor portion is a rectangle in shape in plan view without small triangular sections opposite to each other in the diagonal direction.

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