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11. 发明申请

US20120255577A1 PARTIAL SOLUTION REPLACEMENT IN RECYCLABLE PERSULFURIC ACID CLEANING SYSTEMS 有权
标题翻译：可循环使用的清洁系统中的部分溶液替代物
公开(公告)号：US20120255577A1
公开(公告)日：2012-10-11
申请号：US13080097
申请日：2011-04-05
申请人： Richard O. Henry , David F. Hilscher , Sandi E. Merritt , Charles J. Taft , Robert W. Zigner, JR.
发明人： Richard O. Henry , David F. Hilscher , Sandi E. Merritt , Charles J. Taft , Robert W. Zigner, JR.
IPC分类号： C23G1/36 , B08B3/10
CPC分类号： H01L21/67057 , G01N27/4161 , H01L21/02052 , H01L21/67017
摘要： A method of implementing cleaning solution replacement in a recyclable fluid cleaning system for semiconductor wafers includes activating electrode current for an electrolysis reactor included in the cleaning system. At least one of electrode voltage and operating time for the electrolysis reactor is monitored, until a trigger point has been reached. The trigger point includes one of the electrode voltage reaching a predetermined threshold voltage value, a process time counter reaching a predetermined counter value, and a time value that the electrode voltage has been at the threshold voltage value reaching predetermined value. The process time counter is incremented based on one or more of actual wafer processing time, wafer type, number of wafers processed, and thickness of material to be stripped. Upon reaching the trigger point, the electrode current is deactivated, and at least a portion of cleaning system fluid is drained and replaced with fresh cleaning fluid.
摘要翻译：在用于半导体晶片的可再循环流体清洁系统中实施清洁溶液置换的方法包括激活包括在清洁系统中的电解反应器的电极电流。监控电解反应器的电极电压和操作时间中的至少一个，直到达到触发点。触发点包括达到预定阈值电压值的电极电压中的一个，达到预定计数器值的处理时间计数器和电极电压已经达到阈值电压值的时间值达到预定值。基于实际晶片处理时间，晶片类型，处理的晶片数量和要剥离的材料的厚度中的一个或多个，处理时间计数器增加。在达到触发点时，电极电流被去激活，清洁系统流体的至少一部分被排出并用新鲜的清洁流体代替。

12. 发明授权

US08021945B2 Bottle-shaped trench capacitor with enhanced capacitance 有权
标题翻译：具有增强电容的瓶形沟槽电容器
公开(公告)号：US08021945B2
公开(公告)日：2011-09-20
申请号：US12423242
申请日：2009-04-14
申请人： Xi Li , Russell H. Arndt , Kangguo Cheng , Richard O. Henry , Jinghong H. Li
发明人： Xi Li , Russell H. Arndt , Kangguo Cheng , Richard O. Henry , Jinghong H. Li
IPC分类号： H01L21/8242
CPC分类号： H01L29/66181 , H01L27/10829 , H01L27/1087 , H01L28/82 , Y10S438/964
摘要： In accordance with an aspect of the invention, a method is provided for fabricating a semiconductor chip including a trench capacitor. In such method, a monocrystalline semiconductor region can be etched in a vertical direction through an opening in a dielectric layer to form a trench exposing a rough surface of monocrystalline semiconductor material. The trench has an initial lateral dimension in a first direction transverse to the vertical direction. The semiconductor material exposed at the surface of the trench then is etched in a crystallographic orientation-dependent manner to expose a multiplicity of crystal facets of the semiconductor material at the trench surface. A dopant-containing liner may then be deposited to line the surface of the trench and a temperature of the substrate then be elevated to drive a dopant from the dopant-containing liner into the semiconductor region adjacent to the surface. During such step, typically a portion of the semiconductor material exposed at the wall is oxidized. At least some of the oxidized portion is removed to expose a wall of an enlarged trench, along which wall a dielectric layer and conductive material are formed in order to form a trench capacitor.
摘要翻译：根据本发明的一个方面，提供一种用于制造包括沟槽电容器的半导体芯片的方法。在这种方法中，可以通过电介质层中的开口在垂直方向上蚀刻单晶半导体区域，以形成露出单晶半导体材料的粗糙表面的沟槽。沟槽在垂直于垂直方向的第一方向上具有初始侧向尺寸。然后在晶体表面上暴露的半导体材料以结晶方向依赖的方式进行蚀刻，以在沟槽表面暴露半导体材料的多个晶面。然后可以沉积含掺杂剂的衬里以对沟槽的表面进行排列，然后升高衬底的温度以将掺杂剂从含掺杂剂的衬里驱动到与表面相邻的半导体区域中。在这样的步骤中，通常暴露在壁处的半导体材料的一部分被氧化。去除至少一些氧化部分以露出扩大的沟槽的壁，沿着该壁形成介电层和导电材料以形成沟槽电容器。

13. 发明申请

US20110079255A1 CLEANING EXHAUST SCREENS IN A MANUFACTURING PROCESS 有权
标题翻译：清洁过程中的清洁排气筛
公开(公告)号：US20110079255A1
公开(公告)日：2011-04-07
申请号：US12571477
申请日：2009-10-01
申请人： John A. Fitzsimmons , Richard O. Henry
发明人： John A. Fitzsimmons , Richard O. Henry
IPC分类号： B01D35/02 , B01D35/22 , B01D29/62 , B01D35/01 , B08B3/08
CPC分类号： B08B3/08 , B01D41/04
摘要： A method of cleaning an screen in a manufacturing process step that employs a chamber including a drain line having a screen configured and disposed in the chamber above the drain line to trap soluble materials includes detecting a build-up of soluble material on the screen, ceasing a work operation in the chamber, and initiating a screen cleaning operation. The screen cleaning operation includes closing a computer operated valve fluidly connected to the drain line to fluidly isolate a portion of the chamber, automatically introducing an amount of solvent into the chamber once the computer operated valve is closed with the amount of solvent filling the chamber and/or the drain line to fully immerse the screen, and opening the operated valve after a predetermined amount of time to empty the chamber and the drain line of solvent once the soluble materials trapped on the screen are dissolved.
摘要翻译：一种在制造工艺步骤中清洁屏幕的方法，该方法采用包括排水线的室，该室具有配置并设置在排出管线上方的室内的筛网以捕获可溶性材料，包括检测可溶物质在筛网上的积聚，停止在室中进行工作操作，并启动屏幕清洁操作。屏幕清洁操作包括关闭流体地连接到排水管线的计算机操作的阀，以流体地隔离室的一部分，一旦计算机操作的阀被填充室的溶剂量封闭，则自动将一定量的溶剂引入室中， /或排水管线，以完全浸没屏幕，并且一旦被捕获在屏幕上的可溶性材料溶解，则在预定量的时间之后打开操作的阀以清空溶剂和溶剂的排出管线。

14. 发明申请

US20100258904A1 BOTTLE-SHAPED TRENCH CAPACITOR WITH ENHANCED CAPACITANCE 有权
标题翻译：具有增强电容的瓶形TRENCH电容器
公开(公告)号：US20100258904A1
公开(公告)日：2010-10-14
申请号：US12423242
申请日：2009-04-14
申请人： Xi Li , Russell H. Arndt , Kangguo Cheng , Richard O. Henry , Jinghong H. Li
发明人： Xi Li , Russell H. Arndt , Kangguo Cheng , Richard O. Henry , Jinghong H. Li
IPC分类号： H01L27/07 , H01L21/02
CPC分类号： H01L29/66181 , H01L27/10829 , H01L27/1087 , H01L28/82 , Y10S438/964
摘要： In accordance with an aspect of the invention, a method is provided for fabricating a semiconductor chip including a trench capacitor. In such method, a monocrystalline semiconductor region can be etched in a vertical direction through an opening in a dielectric layer to form a trench exposing a rough surface of monocrystalline semiconductor material. The trench has an initial lateral dimension in a first direction transverse to the vertical direction. The semiconductor material exposed at the surface of the trench then is etched in a crystallographic orientation-dependent manner to expose a multiplicity of crystal facets of the semiconductor material at the trench surface. A dopant-containing liner may then be deposited to line the surface of the trench and a temperature of the substrate then be elevated to drive a dopant from the dopant-containing liner into the semiconductor region adjacent to the surface. During such step, typically a portion of the semiconductor material exposed at the wall is oxidized. At least some of the oxidized portion is removed to expose a wall of an enlarged trench, along which wall a dielectric layer and conductive material are formed in order to form a trench capacitor.
摘要翻译：根据本发明的一个方面，提供一种用于制造包括沟槽电容器的半导体芯片的方法。在这种方法中，可以通过电介质层中的开口在垂直方向上蚀刻单晶半导体区域，以形成露出单晶半导体材料的粗糙表面的沟槽。沟槽在垂直于垂直方向的第一方向上具有初始侧向尺寸。然后在晶体表面上暴露的半导体材料以结晶方向依赖的方式进行蚀刻，以在沟槽表面暴露半导体材料的多个晶面。然后可以沉积含掺杂剂的衬里以对沟槽的表面进行排列，然后升高衬底的温度以将掺杂剂从含掺杂剂的衬里驱动到与表面相邻的半导体区域中。在这样的步骤中，通常暴露在壁处的半导体材料的一部分被氧化。去除至少一些氧化部分以露出扩大的沟槽的壁，沿着该壁形成介电层和导电材料以形成沟槽电容器。

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