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    • 12. 发明申请
    • System for studying power of laser beam
    • 研究激光束功率的系统
    • US20060278822A1
    • 2006-12-14
    • US11385729
    • 2006-03-22
    • Sang Park
    • Sang Park
    • G01D18/00
    • G11B7/126G11B7/1263
    • A laser beam power studying system for studying laser power in a reproducing mode and a recording mode of an optical recording apparatus. A laser beam having different powers in the recording mode and the reproduction mode is emitted and a first part of the laser beam is measured. A second part of the laser beam is measured by a front photo diode and a signal corresponding to the measurement by the front photo diode is amplified by a single amplifier in both reproducing recording study operations. Relational expression between measurements of the first part of the laser beam and the second part of the laser beam at different power levels of the laser beam is developed for both the recording and reproducing modes.
    • 一种用于在再现模式下研究激光功率的激光束功率学习系统和光学记录装置的记录模式。 发射在记录模式和再现模式下具有不同功率的激光束,并且测量激光束的第一部分。 激光束的第二部分由前光电二极管测量,并且在再现记录研究操作中,通过前光电二极管测量的信号被单个放大器放大。 对于记录和再现模式,开发了在激光束的不同功率水平下的激光束的第一部分和激光束的第二部分的测量之间的关系表达。
    • 14. 发明申请
    • System and method for studying power of laser beam
    • 研究激光束功率的系统和方法
    • US20060266940A1
    • 2006-11-30
    • US11371096
    • 2006-03-09
    • Sang Park
    • Sang Park
    • G01D18/00
    • G01D5/26
    • A laser beam power studying system and method. A laser beam is emitted and a power of the laser beam at a position to be incident on a recording medium is measured. A part of the laser beam is converted to a photovoltage signal corresponding to an amount of the laser beam and amplified with reference to a reference voltage signal to provide an output voltage signal. A difference between the output voltage signal and the reference voltage signal is obtained at a plurality of different laser beam power levels, to derive a difference to laser beam power correlation.
    • 激光束功率研究系统及方法。 发射激光束,并且测量入射在记录介质上的位置处的激光束的功率。 将激光束的一部分转换成对应于激光束量的光电压信号,并参考参考电压信号进行放大,以提供输出电压信号。 在多个不同的激光束功率电平下获得输出电压信号和参考电压信号之间的差异,以导出与激光束功率相关的差异。
    • 16. 发明申请
    • Voltage Level Detection Circuit
    • 电压电平检测电路
    • US20060220690A1
    • 2006-10-05
    • US11275463
    • 2006-01-06
    • Sang ParkJa Gou
    • Sang ParkJa Gou
    • H03K5/22
    • H03K5/24
    • A voltage level detection circuit is disclosed. The detection circuit may include a pull-up unit including a plurality of pull-up devices, each for supplying an internal voltage in response to a signal resulting from a logic operation of a voltage up control signal and a voltage down control signal, a voltage division unit including a plurality of voltage dividers, each for dividing the internal voltage from a corresponding one of the pull-up device, a switching unit including a plurality of switching devices, each for switching and supplying an output voltage from a corresponding one of the voltage dividers to an output node in response to a signal resulting from a logic operation of the voltage up control signal and voltage down control signal, and a comparator for comparing the voltage at the output node with a predetermined reference voltage and outputting a voltage pumping enable signal according to a result of the comparison.
    • 公开了电压电平检测电路。 检测电路可以包括上拉单元,其包括多个上拉装置,每个上拉装置用于响应于由升压控制信号和降压控制信号的逻辑运算产生的信号而提供内部电压,电压 分割单元包括多个分压器,每个分压器用于分压来自上拉装置中的相应一个的内部电压,包括多个开关装置的开关单元,每个开关装置用于切换和提供来自所述上拉装置中的相应一个的输出电压 响应由升压控制信号和降压控制信号的逻辑运算而产生的信号,将输出节点的分压器分压到输出节点;以及比较器,用于将输出节点处的电压与预定参考电压进行比较,并输出电压泵浦使能 信号根据比较的结果。
    • 17. 发明申请
    • Methods for forming isolation films
    • 形成隔离膜的方法
    • US20060205173A1
    • 2006-09-14
    • US11156998
    • 2005-06-20
    • Pil SongYoung KimSang Park
    • Pil SongYoung KimSang Park
    • H01L21/76
    • H01L21/76224
    • A method of forming an isolation film in a semiconductor device is disclosed. The disclosed method includes performing a patterning process on a predetermined region of a semiconductor substrate in which a patterned pad film is formed, forming a trench defining an inactive region and an active region, forming a liner film on the entire surface including the trench, forming an insulating film for trench burial only within the trench, stripping the remaining liner film formed except for the inside of the trench and the patterned pad film formed below the liner film, forming a sacrificial film on the entire surface, and performing a polishing process on the entire surface in which the sacrificial film is formed until the semiconductor substrate of the active region is exposed, thereby forming the isolation film having no topology difference with the semiconductor substrate of the active region.
    • 公开了一种在半导体器件中形成隔离膜的方法。 所公开的方法包括在其上形成图案化焊盘膜的半导体衬底的预定区域上执行图案化工艺,形成限定非活性区域和有源区域的沟槽,在包括沟槽的整个表面上形成衬垫膜,形成 用于仅在沟槽内进行沟槽埋置的绝缘膜,剥离除了沟槽内部形成的剩余衬垫膜和形成在衬垫膜下方的图案化衬垫膜,在整个表面上形成牺牲膜,并对 其中形成牺牲膜的整个表面直到有源区的半导体衬底被暴露,从而形成与有源区的半导体衬底没有拓扑结构差异的隔离膜。