专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明授权

US08148257B1 Semiconductor structure and method for making same 有权
标题翻译：半导体结构及其制造方法
公开(公告)号：US08148257B1
公开(公告)日：2012-04-03
申请号：US12894190
申请日：2010-09-30
申请人： Hans-Joachim Barth , Gottfried Beer , Joern Plagmann , Jens Pohl , Werner Robl , Rainer Steiner , Mathias Vaupel
发明人： Hans-Joachim Barth , Gottfried Beer , Joern Plagmann , Jens Pohl , Werner Robl , Rainer Steiner , Mathias Vaupel
IPC分类号： H01L21/44 , H01L21/4763 , H01L21/469
CPC分类号： H01L23/53238 , H01L21/76846 , H01L21/76865 , H01L21/76873 , H01L21/76879 , H01L21/76885 , H01L23/53223 , H01L23/53252 , H01L23/53266 , H01L2924/0002 , H01L2924/00
摘要： One or more embodiments relate to a method of forming an electronic device, comprising: providing a workpiece; forming a first barrier layer over the workpiece; forming an intermediate conductive layer over the first barrier layer; forming a second barrier layer over the intermediate conductive layer; forming a seed layer over the second barrier layer; removing a portion of the seed layer to leave a remaining portion of the seed layer and to expose a portion of the second barrier layer; and electroplating a fill layer on the remaining portion of the seed layer.
摘要翻译：一个或多个实施例涉及一种形成电子设备的方法，包括：提供工件; 在工件上形成第一阻挡层; 在所述第一阻挡层上形成中间导电层; 在所述中间导电层上形成第二阻挡层; 在所述第二阻挡层上形成种子层; 去除种子层的一部分以留下种子层的剩余部分并暴露第二阻挡层的一部分; 并在种子层的剩余部分上电镀填充层。

12. 发明申请

US20110101532A1 DEVICE FABRICATED USING AN ELECTROPLATING PROCESS 有权
标题翻译：使用电镀工艺制作的器件
公开(公告)号：US20110101532A1
公开(公告)日：2011-05-05
申请号：US12611609
申请日：2009-11-03
申请人： Jens Pohl , Hans-Joachim Barth , Gottfried Beer , Rainer Steiner , Werner Robl , Mathias Vaupel
发明人： Jens Pohl , Hans-Joachim Barth , Gottfried Beer , Rainer Steiner , Werner Robl , Mathias Vaupel
IPC分类号： H01L23/48 , H05K1/00 , C25D5/00 , C25D5/34
CPC分类号： H01L23/5389 , H01L21/486 , H01L21/76873 , H01L21/76879 , H01L23/49816 , H01L23/49822 , H01L23/49827 , H01L24/82 , H01L24/97 , H01L2221/1089 , H01L2224/97 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01028 , H01L2924/01029 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/1461 , H01L2924/181 , H01L2224/82 , H01L2924/00
摘要： A method for fabricating a device includes providing a substrate including at least one contact and applying a dielectric layer over the substrate. The method includes applying a first seed layer over the dielectric layer, applying an inert layer over the seed layer, and structuring the inert layer, the first seed layer, and the dielectric layer to expose at least a portion of the contact. The method includes applying a second seed layer over exposed portions of the structured dielectric layer and the contact such that the second seed layer makes electrical contact with the structured first seed layer. The method includes electroplating a metal on the second seed layer.
摘要翻译：一种用于制造器件的方法包括提供包括至少一个接触的衬底并在衬底上施加电介质层。该方法包括在电介质层上施加第一种子层，在种子层上施加惰性层，以及构造惰性层，第一籽晶层和电介质层以暴露至少一部分接触。该方法包括在结构化介电层和触点的暴露部分上施加第二种子层，使得第二籽晶层与结构化的第一籽晶层电接触。该方法包括在第二种子层上电镀金属。

13. 发明申请

US20100188905A1 Spin Device 有权
标题翻译：旋转装置
公开(公告)号：US20100188905A1
公开(公告)日：2010-07-29
申请号：US12358721
申请日：2009-01-23
申请人： Gerhard Poeppel , Hans-Joerg Timme , Werner Robl
发明人： Gerhard Poeppel , Hans-Joerg Timme , Werner Robl
IPC分类号： G11C15/02 , H01L29/66
CPC分类号： H01L29/66984 , B82Y25/00 , H01F10/3254
摘要： According to an embodiment of the present invention, a spin device includes an intermediate semiconductor region arranged between a first terminal and a second terminal, wherein the first terminal is adapted to provide a current having a first degree of spin polarization to the intermediate semiconductor region, and wherein the second terminal is adapted to output the current having a second degree of spin polarization. The spin device further includes a spin selective scattering structure abutting the intermediate semiconductor region, the spin selective scattering structure being adapted such that the first degree of spin polarization is altered to be the second degree, wherein the spin selective scattering structure comprises a control electrode being electrically insulated from the intermediate semiconductor region, and wherein the control electrode is adapted to apply an electrical field perpendicular to a direction of the current through the intermediate semiconductor region to control a magnitude of the current.
摘要翻译：根据本发明的实施例，自旋装置包括布置在第一端子和第二端子之间的中间半导体区域，其中第一端子适于向中间半导体区域提供具有第一自旋极化度的电流，并且其中所述第二端子适于输出具有第二自旋极化度的电流。自旋装置还包括邻接中间半导体区域的自旋选择性散射结构，自旋选择性散射结构适于使第一自旋极化程度改变为第二程度，其中自旋选择性散射结构包括控制电极与中间半导体区域电绝缘，并且其中控制电极适于施加垂直于通过中间半导体区域的电流的方向的电场以控制电流的大小。

14. 发明申请

US20080257744A1 METHOD OF MAKING AN INTEGRATED CIRCUIT INCLUDING ELECTRODEPOSITION OF ALUMINIUM 审中-公开
标题翻译：制造包含铝电沉积的集成电路的方法
公开(公告)号：US20080257744A1
公开(公告)日：2008-10-23
申请号：US11737530
申请日：2007-04-19
申请人： Johannes Lodermeyer , Edmund Riedl , Werner Robl
发明人： Johannes Lodermeyer , Edmund Riedl , Werner Robl
IPC分类号： C25D3/56
CPC分类号： C25D3/44 , C25D17/002 , C25D17/004 , C25D21/11
摘要： A method of making an integrated circuit including composition of matter for electrodepositing of aluminium is disclosed. One embodiment includes a bath having a solution of selected aluminium salts in a substantially anhydrous organic solvent, to uses of certain aluminium salts for electrodepositing and to processes for electrodepositing aluminium.
摘要翻译：公开了一种制造集成电路的方法，该集成电路包括用于电沉积铝的物质的组成。一个实施方案包括具有选定的铝盐在基本上无水的有机溶剂中的溶液的浴，使用某些铝盐进行电沉积和电沉积铝的方法。

15. 发明授权

US06943114B2 Integration scheme for metal gap fill, with fixed abrasive CMP 有权
标题翻译：金属间隙填充的集成方案，固定磨料CMP
公开(公告)号：US06943114B2
公开(公告)日：2005-09-13
申请号：US10084194
申请日：2002-02-28
申请人： Peter Wrschka , Werner Robl , Thomas Goebel
发明人： Peter Wrschka , Werner Robl , Thomas Goebel
IPC分类号： H01L21/3105 , H01L21/302 , H01L21/461
CPC分类号： H01L21/31053 , Y10S438/959
摘要： In a method of planarizing a semiconductor wafer, the improvement comprising polishing above metal interconnect lines to uniformly polish the topography of the wafer to a predetermined endpoint on the wafer sufficiently close above the metal interconnect lines, yet far enough away from the lines to prevent damage to the lines, comprising:a) filling gaps between metal interconnect lines of an inter metal dielectric in a wafer being formed, by depositing HDP fill on top of the metal interconnects, between the metal interconnects, and on the surface of a dielectric layer between the metal interconnects to create an HDP overfill;b) contacting the surface of HDP overfill of the processed semiconductor wafer from step a) with a fixed abrasive polishing pad; andc) relatively moving the wafer and the fixed abrasive polishing pad to affect a polishing rate sufficient to reach a predetermined endpoint and uniformly planar surface on the wafer sufficiently close above the metal interconnect lines and yet far enough away from the lines to prevent damage to the lines.
摘要翻译：在平坦化半导体晶片的方法中，改进包括在金属互连线上方抛光，以将晶片的形貌均匀地抛光到晶片上的预定端点上，该晶圆足够靠近金属互连线上方，远离线路远离线以防止损坏包括：a）通过在金属互连件的顶部，金属互连件之间以及电介质层的表面上沉积HDP填充物，填充在形成的晶片之间的金属互连线之间的间隙，金属互连以产生HDP溢出; b）使来自步骤a）的经处理的半导体晶片的HDP的填充表面与固定的研磨抛光垫接触; 以及c）相对移动所述晶片和所述固定研磨抛光垫以影响足以达到所述晶片上的预定端点和所述晶片上的均匀平坦表面的抛光速率，所述平坦表面足够靠近所述金属互连线，并且远离所述线远离所述线，以防止损坏线条。

16. 发明授权

US08338317B2 Method for processing a semiconductor wafer or die, and particle deposition device 有权
标题翻译：用于处理半导体晶片或模具的方法以及颗粒沉积装置
公开(公告)号：US08338317B2
公开(公告)日：2012-12-25
申请号：US13080813
申请日：2011-04-06
申请人： Manfred Engelhardt , Hans-Joerg Timme , Ivan Nikitn , Manfred Frank , Thomas Kunstmann , Werner Robl , Guenther Ruhl
发明人： Manfred Engelhardt , Hans-Joerg Timme , Ivan Nikitn , Manfred Frank , Thomas Kunstmann , Werner Robl , Guenther Ruhl
IPC分类号： H01L21/00
CPC分类号： H01L33/405 , C23C4/08 , C23C4/134 , H01L21/02115 , H01L21/02118 , H01L21/02203 , H01L21/02263 , H01L21/0331 , H01L21/2855 , H01L21/6835 , H01L21/76877 , H01L21/76885 , H01L24/05 , H01L24/06 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/743 , H01L24/83 , H01L25/0657 , H01L25/074 , H01L2221/68327 , H01L2221/6834 , H01L2224/04026 , H01L2224/04105 , H01L2224/05166 , H01L2224/05644 , H01L2224/05647 , H01L2224/06181 , H01L2224/27418 , H01L2224/27622 , H01L2224/29111 , H01L2224/29118 , H01L2224/29139 , H01L2224/29147 , H01L2224/32145 , H01L2224/32245 , H01L2224/83191 , H01L2224/83801 , H01L2224/83805 , H01L2224/8381 , H01L2224/8382 , H01L2224/94 , H01L2924/01029 , H01L2924/01322 , H01L2924/01327 , H01L2924/10253 , H01L2924/10272 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/1305 , H01L2924/1306 , H01L2924/13062 , H01L2924/181 , H05H1/42 , H05K2203/1344 , H01L2924/00 , H01L2224/27 , H01L2924/0105
摘要： According to various embodiments, a method for processing a semiconductor wafer or die is provided including supplying particles to a plasma such that the particles are activated by the plasma and spraying the activated particles on the semiconductor wafer or die to generate a particle layer on the semiconductor wafer or die.
摘要翻译：根据各种实施例，提供了一种用于处理半导体晶片或裸片的方法，包括向等离子体供应颗粒，使得颗粒被等离子体激活并将活化的颗粒喷射在半导体晶片或裸片上，以在半导体上产生颗粒层晶片或模具。

17. 发明申请

US20120256323A1 METHOD FOR PROCESSING A SEMICONDUCTOR WAFER OR DIE, AND PARTICLE DEPOSITION DEVICE 有权
标题翻译：用于处理半导体晶片或晶片的方法和颗粒沉积器件
公开(公告)号：US20120256323A1
公开(公告)日：2012-10-11
申请号：US13080813
申请日：2011-04-06
申请人： Manfred Engelhardt , Hans-Joerg Timme , Ivan Nikitn , Manfred Frank , Thomas Kunstmann , Werner Robl , Guenther Ruhl
发明人： Manfred Engelhardt , Hans-Joerg Timme , Ivan Nikitn , Manfred Frank , Thomas Kunstmann , Werner Robl , Guenther Ruhl
IPC分类号： H01L23/485 , H01L21/768 , B05B5/03
CPC分类号： H01L33/405 , C23C4/08 , C23C4/134 , H01L21/02115 , H01L21/02118 , H01L21/02203 , H01L21/02263 , H01L21/0331 , H01L21/2855 , H01L21/6835 , H01L21/76877 , H01L21/76885 , H01L24/05 , H01L24/06 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/743 , H01L24/83 , H01L25/0657 , H01L25/074 , H01L2221/68327 , H01L2221/6834 , H01L2224/04026 , H01L2224/04105 , H01L2224/05166 , H01L2224/05644 , H01L2224/05647 , H01L2224/06181 , H01L2224/27418 , H01L2224/27622 , H01L2224/29111 , H01L2224/29118 , H01L2224/29139 , H01L2224/29147 , H01L2224/32145 , H01L2224/32245 , H01L2224/83191 , H01L2224/83801 , H01L2224/83805 , H01L2224/8381 , H01L2224/8382 , H01L2224/94 , H01L2924/01029 , H01L2924/01322 , H01L2924/01327 , H01L2924/10253 , H01L2924/10272 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/1305 , H01L2924/1306 , H01L2924/13062 , H01L2924/181 , H05H1/42 , H05K2203/1344 , H01L2924/00 , H01L2224/27 , H01L2924/0105
摘要： According to various embodiments, a method for processing a semiconductor wafer or die is provided including supplying particles to a plasma such that the particles are activated by the plasma and spraying the activated particles on the semiconductor wafer or die to generate a particle layer on the semiconductor wafer or die.
摘要翻译：根据各种实施例，提供了一种用于处理半导体晶片或裸片的方法，包括向等离子体供应颗粒，使得颗粒被等离子体激活并将活化的颗粒喷射在半导体晶片或裸片上，以在半导体上产生颗粒层晶片或模具。

18. 发明授权

US07974120B2 Spin device 有权
标题翻译：旋转装置
公开(公告)号：US07974120B2
公开(公告)日：2011-07-05
申请号：US12358721
申请日：2009-01-23
申请人： Gerhard Poeppel , Hans-Joerg Timme , Werner Robl
发明人： Gerhard Poeppel , Hans-Joerg Timme , Werner Robl
IPC分类号： G11C11/00
CPC分类号： H01L29/66984 , B82Y25/00 , H01F10/3254
摘要： According to an embodiment of the present invention, a spin device includes an intermediate semiconductor region arranged between a first terminal and a second terminal, wherein the first terminal is adapted to provide a current having a first degree of spin polarization to the intermediate semiconductor region, and wherein the second terminal is adapted to output the current having a second degree of spin polarization. The spin device further includes a spin selective scattering structure abutting the intermediate semiconductor region, the spin selective scattering structure being adapted such that the first degree of spin polarization is altered to be the second degree, wherein the spin selective scattering structure comprises a control electrode being electrically insulated from the intermediate semiconductor region, and wherein the control electrode is adapted to apply an electrical field perpendicular to a direction of the current through the intermediate semiconductor region to control a magnitude of the current.
摘要翻译：根据本发明的实施例，自旋装置包括布置在第一端子和第二端子之间的中间半导体区域，其中第一端子适于向中间半导体区域提供具有第一自旋极化度的电流，并且其中所述第二端子适于输出具有第二自旋极化度的电流。自旋装置还包括邻接中间半导体区域的自旋选择性散射结构，自旋选择性散射结构适于使第一自旋极化程度改变为第二程度，其中自旋选择性散射结构包括控制电极与中间半导体区域电绝缘，并且其中控制电极适于施加垂直于通过中间半导体区域的电流的方向的电场以控制电流的大小。

19. 发明申请

US20080257743A1 METHOD OF MAKING AN INTEGRATED CIRCUIT INCLUDING ELECTRODEPOSITION OF METALLIC CHROMIUM 有权
标题翻译：制造包含金属铬电沉积的集成电路的方法
公开(公告)号：US20080257743A1
公开(公告)日：2008-10-23
申请号：US11737536
申请日：2007-04-19
申请人： Johannes Lodermeyer , Edmund Riedl , Werner Robl
发明人： Johannes Lodermeyer , Edmund Riedl , Werner Robl
IPC分类号： C09D5/00 , C25C7/00 , C25D7/12
CPC分类号： C25D7/12 , C25D3/06 , C25D3/10 , C25D21/04
摘要： A method of making an integrated circuit including a composition of matter for electrodepositing of chromium is disclosed. One embodiment provides a bath having a solution of a chromium salt in a substantially anhydrous organic solvent, to uses of certain chromium salts for electrodepositing and to processes for electrodepositing chromium.
摘要翻译：公开了一种制造集成电路的方法，该集成电路包括用于电沉积铬的物质组合物。一个实施方案提供了一种具有铬盐在基本上无水的有机溶剂中的溶液的浴，用于某些铬盐的电沉积和电沉积铬的方法。

20. 发明授权

US09425146B2 Semiconductor structure and method for making same 有权
标题翻译：半导体结构及其制造方法
公开(公告)号：US09425146B2
公开(公告)日：2016-08-23
申请号：US12891865
申请日：2010-09-28
申请人： Thomas Fischer , Juergen Foerster , Werner Robl , Andreas Stueckjuergen
发明人： Thomas Fischer , Juergen Foerster , Werner Robl , Andreas Stueckjuergen
IPC分类号： H01L23/532 , H01L21/3213 , H01L21/768 , H01L23/00
CPC分类号： H01L23/535 , H01L21/30604 , H01L21/32134 , H01L21/76838 , H01L21/76885 , H01L23/53238 , H01L24/03 , H01L24/05 , H01L2221/1078 , H01L2224/03614 , H01L2224/03622 , H01L2224/05166 , H01L2224/05186 , H01L2224/05193 , H01L2224/05647 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/14 , H01L2924/00014 , H01L2924/00
摘要： One or more embodiments relate to a method for making a semiconductor structure, comprising: providing a workpiece; forming a barrier layer over the workpiece; forming a separation layer over the barrier layer; forming a conductive layer over the separation layer; and wet etching the conductive layer.
摘要翻译：一个或多个实施例涉及制造半导体结构的方法，包括：提供工件; 在工件上形成阻挡层; 在阻挡层上形成分离层; 在分离层上形成导电层; 并湿式蚀刻导电层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式