专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明授权

US5657153A Optical amplifier with complementary modulation signal inputs 失效
标题翻译：具有互补调制信号输入的光放大器
公开(公告)号：US5657153A
公开(公告)日：1997-08-12
申请号：US408030
申请日：1995-03-21
申请人： John Endriz , David F. Welch , Robert G. Waarts , Steven Sanders , Donald R. Scifres
发明人： John Endriz , David F. Welch , Robert G. Waarts , Steven Sanders , Donald R. Scifres
IPC分类号： H04B10/17 , H01S3/00 , H04B10/04
CPC分类号： H04B10/291 , H04B10/2912 , H01S3/005 , H01S3/06712 , H01S3/06754 , H01S3/10015 , H01S3/2383 , H01S5/06216 , H01S5/4087
摘要： In an optical transmission medium, such as a fiber amplifier, two optically distinguishable signals with complementary modulation are both inputted into the amplifying medium for encoding information, particularly a serial stream of digital data, or alternatively, redundant encoding of pulses. The gain profile in the medium is preferably maintained approximately constant at all times, so that whichever amplified signal is used as the primary information carrier, its output intensity will be substantially stable from pulse to pulse, independent of recent pulse history. The two complementary signals may have different orthogonal linear polarizations or wavelengths with the same stimulated emission cross-section, so that the population inversion profile stays constant, whichever signal happens to be on at a given moment. The two signals may be derived from separate intensity modulated laser diode signal sources, from a single laser diode signal source switched between two emission wavelengths, or from a single laser diode with constant emission coupled to a directional coupler directing two complementary polarized light signals into the fiber amplifying medium.
摘要翻译：在诸如光纤放大器的光传输介质中，具有互补调制的两个光学可区分信号都被输入到用于对信息进行编码的放大媒体，特别是串行数字数据流，或备选地，脉冲的冗余编码。介质中的增益分布优选总是保持近似恒定，因此无论使用哪个放大信号作为主信息载体，其输出强度将基本上与脉冲相比稳定，与最近的脉冲历史无关。两个互补信号可以具有不同的具有相同受激发射横截面的正交线性偏振或波长，使得群体反转谱保持恒定，无论哪个信号在给定时刻发生什么信号。两个信号可以从单独的强度调制的激光二极管信号源获得，来自在两个发射波长之间切换的单个激光二极管信号源，或者来自具有恒定发射的单个激光二极管耦合到定向耦合器，其将两个互补偏振光信号引入到光纤放大介质。

12. 发明授权

US5539571A Differentially pumped optical amplifer and mopa device 失效
标题翻译：差分泵浦光学放大器和mopa器件
公开(公告)号：US5539571A
公开(公告)日：1996-07-23
申请号：US202359
申请日：1994-02-28
申请人： David F. Welch , Donald R. Scifres , Robert G. Waarts , David G. Mehuys , Amos A. Hardy , Ross A. Parke
发明人： David F. Welch , Donald R. Scifres , Robert G. Waarts , David G. Mehuys , Amos A. Hardy , Ross A. Parke
IPC分类号： H01S5/026 , H01S5/042 , H01S5/062 , H01S5/10 , H01S5/12 , H01S5/125 , H01S5/16 , H01S5/187 , H01S5/20 , H01S5/50 , H01S3/00
CPC分类号： H01S5/0425 , H01S5/026 , H01S5/20 , H01S5/50 , H01S2301/163 , H01S2301/166 , H01S5/0267 , H01S5/0422 , H01S5/06243 , H01S5/1014 , H01S5/1053 , H01S5/1064 , H01S5/1085 , H01S5/12 , H01S5/125 , H01S5/16 , H01S5/187 , H01S5/2036 , H01S5/5018
摘要： An optical amplifier semiconductor device which is differentially pumped and a master oscillator power amplifier (MOPA) device employing such an amplifier. The amplifier allows the light propagating therein to diverge along at least part of its length, and may be a flared amplifier having a gain region that increases in width toward its output at a rate that equals or exceeds the divergence of the light. The amplifier is pumped with a current density at its input end which is smaller than the current density used to pump the output end for maintaining coherence of the beam to high power levels. Differential pumping may be both longitudinal and lateral within the amplifier. A single mode preamplifier section may be optically coupled to the input end of the amplifier. The amplifier input may have a width which is the same as or wider than that of the preamplifier output. The preamplifier may have a constant mode width or may be tapered to alter the divergence of the beams provided to the amplifier section. The laser oscillator in the MOPA device may be a single mode DBR laser diode monolithically integrated on the same substrate as the optical amplifier. Laser sources external to an amplifier chip may also be used. The input portion of the amplifier or the preamplifier section, if present, may be modulated. The laser oscillator might also be modulated if it has a high Q cavity. Tunable laser oscillators are also disclosed.
摘要翻译：差分泵浦的光放大器半导体器件和采用这种放大器的主振荡器功率放大器（MOPA）器件。放大器允许其中传播的光沿其长度的至少一部分发散，并且可以是具有增益区域的扩张放大器，该增益区域以等于或超过光的发散度的速率朝向其输出增加。放大器在其输入端以电流密度泵送，该电流密度小于用于泵浦输出端的电流密度，以将光束的相干性保持在高功率水平。差分泵浦可以在放大器内部纵向和横向两者。单模前置放大器部分可以光耦合到放大器的输入端。放大器输入可以具有与前置放大器输出的宽度相同或更宽的宽度。前置放大器可以具有恒定的模式宽度，或者可以是锥形的，以改变提供给放大器部分的光束的发散度。 MOPA器件中的激光振荡器可以是单模DBR激光二极管，其单片集成在与光放大器相同的衬底上。还可以使用放大器芯片外部的激光源。放大器或前置放大器部分的输入部分（如果存在）可以被调制。如果激光振荡器具有高Q腔，则也可能会被调制。还公开了可调谐激光振荡器。

13. 发明授权

US5159604A Antiguided semiconductor laser array with edge reflectors 失效
标题翻译：具有边缘反射器的反射半导体激光器阵列
公开(公告)号：US5159604A
公开(公告)日：1992-10-27
申请号：US737463
申请日：1991-07-29
申请人： David G. Mehuys , Amos A. Hardy , David F. Welch , Robert G. Waarts , Donald R. Scifres
发明人： David G. Mehuys , Amos A. Hardy , David F. Welch , Robert G. Waarts , Donald R. Scifres
IPC分类号： H01S5/40
CPC分类号： H01S5/4031
摘要： In a semiconductor laser array structure in which antiguided regions between high effective refractive index waveguide regions experience greater gain then the waveguide regions, structures introduced at the sides of the array, next to the edgemost waveguides and not on the array period, reflect laterally transmitted radiation back toward the center of the array. The edge reflecting structures may be waveguide regions having widths of (m'+1/2) half-wavelengths, where "m'" is zero or a positive integer, compared to array waveguides with width m, where "m" is an integer not necessarily equal to "m'". The edge reflecting structures may also be stacks of such waveguides, where the regions between the edge waveguides are of a width substantially equal to (n'+1/2) half-wavelengths, compared to antiguide element widths of n half-wavelengths. The two integers n and n' may be, but are not necessarily, equal. Alternatively, the edge reflectors can be mirrors fabricated at the side edges of the array or by disordering the active region beyond the edgemost waveguides to form a refractive index step. The mirrors should be positioned a distance substantially a/2 from the edgemost emitters, where "a" is the array period.
摘要翻译：在半导体激光器阵列结构中，其中高有效折射率波导区域之间的防护区域具有更大的增益，然后波导区域，引导在阵列侧面的结构，在边缘波导旁边，而不是阵列周期，反射横向透射辐射回到阵列的中心。与具有宽度m的阵列波导相比，边缘反射结构可以是宽度为（m'+ 1/2）半波长的波导区域，其中“m”为零或正整数，其中“m”为整数不一定等于“m”。边缘反射结构也可以是这样的波导的堆叠，其中边缘波导之间的区域的宽度基本上等于（n'+ 1/2）个半波长，与n个半波长的防卫元件宽度相比。两个整数n和n'可以是但并不一定相等。或者，边缘反射器可以是在阵列的侧边缘处制造的反射镜，或者通过使有源区域超出边缘波导的方式来形成折射率步骤。镜子应该与edgemost发射器的距离基本上为1/2，其中“a”是阵列周期。

14. 发明授权

US6100546A III-V arsenide-nitride semiconductor 失效
标题翻译： III-V族砷化物半导体
公开(公告)号：US6100546A
公开(公告)日：2000-08-08
申请号：US908766
申请日：1997-08-07
申请人： Jo S. Major , David F. Welch , Donald R. Scifres
发明人： Jo S. Major , David F. Welch , Donald R. Scifres
IPC分类号： C23C16/30 , H01L33/32 , H01S5/323 , H01L33/00 , H01L31/0304
CPC分类号： H01S5/3235 , C23C16/303 , C30B25/02 , C30B29/40 , H01L33/32 , H01S5/32 , H01S5/323 , H01S5/32341 , H01S5/32366 , H01S5/32375
摘要： III-V arsenide-nitride semiconductor are disclosed. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V materials varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V material can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.
摘要翻译：公开了III-V族氮化物半导体。 III族元素与V族元素组合，包括至少氮和砷，其浓度选择为与市售的晶体基质匹配。这些III-V晶体的外延生长导致直接的带隙材料，其可以用于诸如发光二极管和激光器的应用中。改变III-V材料中元素的浓度会改变带隙，从而可以产生跨越可见光谱的光以及中红外和近紫外线发射体的材料。相反，这种材料可用于产生获得光并将光转换成电的装置，用于诸如全色光电检测器和太阳能收集器的应用。 III-V材料的生长可以通过在导致总体晶格匹配和带隙期望的序列中生长薄层的元素或化合物来实现。

15. 发明授权

US5337328A Semiconductor laser with broad-area intra-cavity angled grating 失效
标题翻译：具有广域腔内角度光栅的半导体激光器
公开(公告)号：US5337328A
公开(公告)日：1994-08-09
申请号：US97682
申请日：1993-07-27
申请人： Robert J. Lang , Kenneth M. Dzurko , Donald R. Scifres , David F. Welch
发明人： Robert J. Lang , Kenneth M. Dzurko , Donald R. Scifres , David F. Welch
IPC分类号： H01S5/026 , H01S5/028 , H01S5/10 , H01S5/125 , H01S5/187 , H01S5/20 , H01S5/40 , H01S5/42 , H01S5/50 , H01S3/19
CPC分类号： H01S5/1032 , H01S5/1071 , H01S5/20 , H01S5/423 , H01S5/026 , H01S5/028 , H01S5/1243 , H01S5/125 , H01S5/187 , H01S5/2036 , H01S5/4075 , H01S5/42 , H01S5/50
摘要： A semiconductor laser includes a grating that is disposed at an angle to cavity reflectors to coherently diffract a beam of light along a path that is at least partially laterally directed within the cavity. The grating period and orientation are selected such that a specified wavelength of the light beam propagating along the path will resonate for light that impinges upon the end reflectors at normal incidence. By keeping the angle of incidence of the light beam upon the grating greater than about 45 degrees, reflectivity of the grating is maximized and the required grating period is larger thereby simplifying the fabrication of the grating.
摘要翻译：半导体激光器包括光栅，该光栅与空腔反射器成角度设置，以沿着至少部分横向定向在空腔内的路径相干地衍射光束。选择光栅周期和取向，使得沿着路径传播的光束的指定波长将对于在正常入射时撞击端反射器的光共振。通过将光束的入射角保持在大于45度的光栅上，光栅的反射率最大化，并且所需的光栅周期更大，从而简化了光栅的制造。

16. 发明授权

US06342405B1 Methods for forming group III-arsenide-nitride semiconductor materials 失效
标题翻译：形成III族砷化物 - 氮化物半导体材料的方法
公开(公告)号：US06342405B1
公开(公告)日：2002-01-29
申请号：US09576746
申请日：2000-05-23
申请人： Jo S. Major , David F. Welch , Donald R. Scifres
发明人： Jo S. Major , David F. Welch , Donald R. Scifres
IPC分类号： H01L2100
CPC分类号： H01S5/3235 , C23C16/303 , C30B25/02 , C30B29/40 , H01L33/32 , H01S5/32 , H01S5/323 , H01S5/32341 , H01S5/32366 , H01S5/32375
摘要： Methods are disclosed for forming Group III-arsenide-nitride semiconductor materials. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V crystals can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.
摘要翻译：公开了用于形成III族 - 氮化物 - 氮化物半导体材料的方法。 III族元素与V族元素组合，包括至少氮和砷，其浓度选择为与市售的晶体基质匹配。这些III-V晶体的外延生长导致直接的带隙材料，其可以用于诸如发光二极管和激光器的应用中。改变III-V晶体中元素的浓度会改变带隙，从而可以产生跨越可见光谱的光的材料，以及中红外和近紫外线发射器。相反，这种材料可用于产生获得光并将光转换成电的装置，用于诸如全色光电检测器和太阳能收集器的应用。 III-V晶体的生长可以通过在导致总体晶格匹配和带隙期望的序列中生长薄层的元素或化合物来实现。

17. 再颁专利

USRE37051E1 Semiconductor gain medium with multimode and single mode regions 有权
标题翻译：具有多模和单模区域的半导体增益介质
公开(公告)号：USRE37051E1
公开(公告)日：2001-02-13
申请号：US09419873
申请日：1999-10-15
申请人： David F. Welch , David G. Mehuys , Donald R. Scifres
发明人： David F. Welch , David G. Mehuys , Donald R. Scifres
IPC分类号： H01S319
CPC分类号： H01S5/1014 , G02B6/12004 , G02B6/305 , H01S3/0818 , H01S3/113 , H01S5/026 , H01S5/0286 , H01S5/0425 , H01S5/0625 , H01S5/06256 , H01S5/065 , H01S5/0655 , H01S5/10 , H01S5/1003 , H01S5/1064 , H01S5/1082 , H01S5/1085 , H01S5/1215 , H01S5/125 , H01S5/14 , H01S5/141 , H01S5/146 , H01S5/18 , H01S5/187 , H01S5/20 , H01S5/2036 , H01S5/2063 , H01S5/4025 , H01S5/4062 , H01S5/4087 , H01S5/50 , H01S2301/166
摘要： A semiconductor gain medium has an optical cavity comprising a multimode region permitting propagation of light with a diverging phase front and a single mode region. An optical cavity is formed by optical feedback within the medium. Preferably, the feedback comprises a combination of a cleaved facet and a grating. The gain medium may be an amplifier or, in addition to the amplifier, may include a resonator cavity, or operate as an unstable resonator.
摘要翻译：半导体增益介质具有包括多模区域的光腔，该多模区域允许具有发散相位前沿和单模式区域的光的传播。通过介质内的光学反馈形成光腔。优选地，反馈包括切割面和光栅的组合。增益介质可以是放大器，或者除了放大器之外，还可以包括谐振腔，或作为不稳定谐振器工作。

18. 发明授权

US5914978A Semiconductor gain medium with multimode and single mode regions 失效
标题翻译：具有多模和单模区域的半导体增益介质
公开(公告)号：US5914978A
公开(公告)日：1999-06-22
申请号：US69350
申请日：1998-04-29
申请人： David F. Welch , David G. Mehuys , Donald R. Scifres
发明人： David F. Welch , David G. Mehuys , Donald R. Scifres
IPC分类号： H01S3/081 , H01S3/23 , H01S5/026 , H01S5/042 , H01S5/0625 , H01S5/065 , H01S5/10 , H01S5/12 , H01S5/125 , H01S5/14 , H01S5/18 , H01S5/187 , H01S5/20 , H01S5/40 , H01S5/50 , H01S3/19
CPC分类号： H01S5/1014 , G02B6/305 , H01S5/026 , H01S5/065 , H01S5/10 , H01S5/141 , H01S5/20 , G02B6/12004 , H01S2301/166 , H01S3/0818 , H01S3/113 , H01S5/0286 , H01S5/0425 , H01S5/0625 , H01S5/06256 , H01S5/0655 , H01S5/1003 , H01S5/1064 , H01S5/1082 , H01S5/1085 , H01S5/1215 , H01S5/125 , H01S5/14 , H01S5/146 , H01S5/18 , H01S5/187 , H01S5/2036 , H01S5/2063 , H01S5/4025 , H01S5/4062 , H01S5/4087 , H01S5/50
摘要： A semiconductor gain medium has an optical cavity comprising a multimode region permitting propagation of light with a diverging phase front and a single mode region. An optical cavity is formed by optical feedback within the medium. Preferably, the feedback comprises a combination of a cleaved facet and a grating. The gain medium may be an amplifier or, in addition to the amplifier, may include a resonator cavity, or operate as an unstable resonator.
摘要翻译：半导体增益介质具有包括多模区域的光腔，该多模区域允许具有发散相位前沿和单模式区域的光的传播。通过介质内的光学反馈形成光腔。优选地，反馈包括切割面和光栅的组合。增益介质可以是放大器，或者除了放大器之外，还可以包括谐振腔，或作为不稳定谐振器工作。

19. 发明授权

US5696779A Wavelength tunable semiconductor laser with mode locked operation 失效
标题翻译：波长可调半导体激光器，具有锁模操作
公开(公告)号：US5696779A
公开(公告)日：1997-12-09
申请号：US642063
申请日：1996-05-03
申请人： David F. Welch , David G. Mehuys , Donald R. Scifres
发明人： David F. Welch , David G. Mehuys , Donald R. Scifres
IPC分类号： H01S3/081 , H01S3/23 , H01S5/026 , H01S5/042 , H01S5/0625 , H01S5/065 , H01S5/10 , H01S5/12 , H01S5/125 , H01S5/14 , H01S5/18 , H01S5/187 , H01S5/20 , H01S5/40 , H01S5/50 , H01S3/098
CPC分类号： H01S5/1014 , G02B6/305 , H01S5/026 , H01S5/065 , H01S5/10 , H01S5/141 , H01S5/20 , G02B6/12004 , H01S2301/166 , H01S3/0818 , H01S3/113 , H01S5/0286 , H01S5/0425 , H01S5/0625 , H01S5/06256 , H01S5/0655 , H01S5/1003 , H01S5/1064 , H01S5/1082 , H01S5/1085 , H01S5/1215 , H01S5/125 , H01S5/14 , H01S5/146 , H01S5/18 , H01S5/187 , H01S5/2036 , H01S5/2063 , H01S5/4025 , H01S5/4062 , H01S5/4087 , H01S5/50
摘要： A wavelength tunable, semiconductor laser includes a gain region, e.g., a flared amplifier region, that permits light propagation with a diverging phase front along at least a portion of the gain region. Optical feedback defines a resonant laser cavity that has a first reflector at a first end of the cavity a second reflector at a second end of the cavity for reflecting at least a portion of the light back propagating in the cavity back into the cavity. Wavelength tuned selection, such as through orientation of a grating reflector or via a prism, is provided in the resonant laser cavity for producing a relatively lower optical loss in the cavity to a selected wavelength or a band of wavelengths of the light propagating within the cavity relative to other nonselected wavelengths such that stable laser oscillation is established at the selected wavelength or band of wavelengths. A single spatial mode region disposed in the resonant laser cavity with at least a portion modulated independent of the excitation of the gain region can be used to achieve mode locked operation of the laser.
摘要翻译：波长可调谐半导体激光器包括增益区域，例如扩口放大器区域，其允许沿着增益区域的至少一部分沿着发散相位前沿的光传播。光学反馈限定谐振激光腔，其在空腔的第一端处具有第一反射器，在空腔的第二端处具有第二反射器，用于将至少一部分在空腔中反射的光反射回到空腔中。在谐振激光腔中提供诸如通过光栅反射器的取向或通过棱镜的波长调谐选择，以在空腔中产生相对较低的光学损耗，使其在腔内传播的光的选定波长或波长带相对于其它未选择的波长，使得在所选择的波长或波段下建立稳定的激光振荡。可以使用设置在谐振激光器腔中的单个空间模式区域，其中至少一部分被调制为与增益区域的激励无关，以实现激光器的锁模操作。

20. 发明授权

US5592503A Semiconductor laser with integral spatial mode filter 失效
标题翻译：具有积分空间模式滤波器的半导体激光器
公开(公告)号：US5592503A
公开(公告)日：1997-01-07
申请号：US263190
申请日：1994-06-21
申请人： David F. Welch , David G. Mehuys , Donald R. Scifres
发明人： David F. Welch , David G. Mehuys , Donald R. Scifres
IPC分类号： H01S3/081 , H01S3/23 , H01S5/026 , H01S5/042 , H01S5/0625 , H01S5/065 , H01S5/10 , H01S5/12 , H01S5/125 , H01S5/14 , H01S5/18 , H01S5/187 , H01S5/20 , H01S5/40 , H01S5/50 , H01S3/19
CPC分类号： H01S5/1014 , G02B6/305 , H01S5/026 , H01S5/065 , H01S5/10 , H01S5/141 , H01S5/20 , G02B6/12004 , H01S2301/166 , H01S3/0818 , H01S3/113 , H01S5/0286 , H01S5/0425 , H01S5/0625 , H01S5/06256 , H01S5/0655 , H01S5/1003 , H01S5/1064 , H01S5/1082 , H01S5/1085 , H01S5/1215 , H01S5/125 , H01S5/14 , H01S5/146 , H01S5/18 , H01S5/187 , H01S5/2036 , H01S5/2063 , H01S5/4025 , H01S5/4062 , H01S5/4087 , H01S5/50
摘要： A semiconductor laser having a light amplifying diode heterostructure with a flared gain region in an external resonant cavity. The flared gain region has a narrow aperture end which may be coupled to a single mode waveguide and a wide output end. A light emitting surface of the heterostructure proximate to the wide end of the flared gain region is partially reflective and combines with an external reflector to form a resonant cavity that is effectively unstable. The intracavity light-emitting surface proximate to the narrow aperture end is antireflection coated. The external reflector may be a planar mirror or a grating reflector. A lens or an optical fiber may couple the aperture end of the flared gain region to the external reflector. Frequency-selective feedback is provided by orienting the grating reflector or providing a prism in the cavity in front of the external planar mirror. Other filtering elements may also be placed in the external cavity. The flared gain region and waveguide may be differentially pumped or modulated with current provided by separate contacts.
摘要翻译：一种具有在外部谐振腔中具有扩张增益区的光放大二极管异质结构的半导体激光器。扩口增益区域具有窄孔径端，其可以耦合到单模波导和宽输出端。接近扩张增益区域的宽端的异质结构的发光表面是部分反射的，并且与外部反射器组合以形成有效不稳定的谐振腔。靠近窄孔径的腔内发光表面是抗反射涂层的。外部反射器可以是平面镜或光栅反射器。透镜或光纤可将扩张增益区域的孔径端耦合到外部反射器。通过定向光栅反射器或在外部平面镜的前面的空腔中提供棱镜来提供频率选择反馈。其它过滤元件也可以放置在外部空腔中。扩张增益区域和波导可以通过由单独的触点提供的电流进行差分泵浦或调制。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式