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11. 发明授权

US09469522B2 Epi-poly etch stop for out of plane spacer defined electrode 有权
标题翻译：用于外平面间隔物限定电极的Epi-多晶蚀刻停止
公开(公告)号：US09469522B2
公开(公告)日：2016-10-18
申请号：US14201453
申请日：2014-03-07
申请人： Robert Bosch GmbH
发明人： Andrew Graham , Gary Yama , Gary O'Brien
IPC分类号： B81C1/00 , B81B3/00
CPC分类号： B81B3/0021 , B81B2201/0271 , B81B2203/04 , B81B2203/053 , B81C1/00095 , B81C1/00166 , B81C2201/0132 , B81C2201/014 , B81C2201/0177 , B81C2203/0136
摘要： In one embodiment, a method of forming an out-of-plane electrode includes forming an oxide layer above an upper surface of a device layer, etching an etch stop perimeter defining trench extending through the oxide layer, forming a first cap layer portion on an upper surface of the oxide layer and within the etch stop perimeter defining trench, etching a first electrode perimeter defining trench extending through the first cap layer portion and stopping at the oxide layer, depositing a first material portion within the first electrode perimeter defining trench, depositing a second cap layer portion above the deposited first material portion, and vapor releasing a portion of the oxide layer with the etch stop portion providing a lateral etch stop.
摘要翻译：在一个实施例中，形成平面外电极的方法包括在器件层的上表面上形成氧化物层，蚀刻限定延伸穿过氧化物层的沟槽的蚀刻停止周界，在第一帽层部分上形成氧化物层的上表面，并且在蚀刻停止周界内限定沟槽，蚀刻延伸穿过第一盖层部分并停止在氧化物层处的第一电极周界，限定沟槽，在第一电极周界限定沟槽内沉积第一材料部分，沉积在沉积的第一材料部分上方的第二盖层部分，以及用蚀刻停止部分提供横向蚀刻停止物的一部分氧化物层的蒸气。

12. 发明申请

US20160137493A1 MEMS DEVICE HAVING A GETTER 有权
标题翻译：具有GETTER的MEMS器件
公开(公告)号：US20160137493A1
公开(公告)日：2016-05-19
申请号：US14207752
申请日：2014-03-13
申请人： Robert Bosch GmbH
发明人： Ashwin Samarao , Gary O'Brien , Ando Feyh , Gary Yama , Andrew Graham , Bongsang Kim , Fabian Purkl
IPC分类号： B81C1/00
CPC分类号： B81C1/00285 , B81C2201/0115 , B81C2203/0109 , B81C2203/0118 , B81C2203/035 , H01L21/3223 , H01L21/3225 , H01L23/28
摘要： A microelectromechanical system (MEMS) device includes a high density getter. The high density getter includes a silicon surface area formed by porosification or by the formation of trenches within a sealed cavity of the device. The silicon surface area includes a deposition of titanium or other gettering material to reduce the amount of gas present in the sealed chamber such that a low pressure chamber is formed. The high density getter is used in bolometers and gyroscopes but is not limited to those devices.
摘要翻译：微机电系统（MEMS）装置包括高密度吸气剂。高密度吸气剂包括通过孔化形成的硅表面积或通过在该装置的密封腔内形成沟槽。硅表面积包括钛或其它吸气材料的沉积物，以减少密封室中存在的气体的量，从而形成低压室。高密度吸气剂用于测辐射仪和陀螺仪，但不限于这些设备。

13. 发明授权

US09233842B2 Passivation layer for harsh environments and methods of fabrication thereof 有权
标题翻译：用于恶劣环境的钝化层及其制造方法
公开(公告)号：US09233842B2
公开(公告)日：2016-01-12
申请号：US14201247
申请日：2014-03-07
申请人： Robert Bosch GmbH
发明人： Ando Lars Feyh , Fabian Purkl , Andrew Graham , Gary Yama
IPC分类号： H01L21/31 , B81C1/00 , H01L23/31 , H01L21/314 , H01L45/00 , H01L21/02
CPC分类号： B81C1/00809 , B81C2201/016 , H01L21/02601 , H01L23/3192 , H01L45/146 , H01L2924/0002 , H01L2924/00
摘要： A method of fabricating a passivation layer and a passivation layer for an electronic device. The passivation layer includes at least one passivation film layer and at least one nanoparticle layer. A first film layer is formed of an insulating matrix, such as aluminum oxide (Al2O3) and a first layer of a noble metal nanoparticle layer, such as a platinum nanoparticle layer, is deposited on the first film layer. Additional layers are formed of alternating film layers and nanoparticle layers. The resulting passivation layer provides a thin and robust passivation layer of high film quality to protect electronic devices, components, and systems from the disruptive environmental conditions.
摘要翻译：一种制造用于电子设备的钝化层和钝化层的方法。钝化层包括至少一个钝化膜层和至少一个纳米颗粒层。第一膜层由诸如氧化铝（Al2O3）的绝缘基体形成，并且第一层金属纳米颗粒层（例如铂纳米颗粒层）沉积在第一膜层上。附加层由交替的膜层和纳米颗粒层形成。所得到的钝化层提供了一种具有高膜质量的薄且坚固的钝化层，以保护电子设备，部件和系统免受破坏性环境条件的影响。

14. 发明申请

US20140248735A1 THIN-FILM ENCAPSULATED INFRARED SENSOR 有权
标题翻译：薄膜封装红外传感器
公开(公告)号：US20140248735A1
公开(公告)日：2014-09-04
申请号：US14109917
申请日：2013-12-17
申请人： Robert Bosch GmbH
发明人： Fabian Purkl , Gary Yama , Ando Feyh , Andrew Graham , Ashwin Samarao , Gary O'Brien
IPC分类号： H01L31/0203 , H01L31/18 , H01L31/09
CPC分类号： H01L31/0203 , G01J5/045 , G01J5/20 , H01L31/09 , H01L31/18
摘要： A method of fabricating a bolometer infrared sensor includes depositing a first sacrificial layer on a surface of a substrate over a sensor region, and forming an absorber structure for the infrared sensor on top of the first sacrificial layer. A second sacrificial layer is deposited on top of the absorber structure. An encapsulating thin film is then deposited on top of the second sacrificial layer. Vent holes are formed in the encapsulating thin film. The first and the second sacrificial layers are removed below the encapsulating thin film to release the absorber structure and form a cavity above the sensing region that extends down to the substrate in which the absorber structure is located via the vent holes. The vent holes are then closed in a vacuum environment to seal the absorber structure within the cavity.
摘要翻译：一种制造测辐射热计红外传感器的方法包括在传感器区域上的衬底表面上沉积第一牺牲层，以及在第一牺牲层的顶部上形成用于红外传感器的吸收体结构。第二牺牲层沉积在吸收体结构的顶部。然后将封装的薄膜沉积在第二牺牲层的顶部上。在封装薄膜中形成排气孔。在封装薄膜下方移除第一和第二牺牲层，以释放吸收体结构，并在感应区域之上形成一个空腔，该感应区域向下延伸到吸收体结构通过通气孔位于其中的衬底。然后在真空环境中关闭通气孔以密封空腔内的吸收体结构。

15. 发明授权

US10175188B2 Trench based capacitive humidity sensor 有权
公开(公告)号：US10175188B2
公开(公告)日：2019-01-08
申请号：US13832904
申请日：2013-03-15
申请人： Robert Bosch GmbH
发明人： Gary O'Brien , Ando Feyh , Andrew Graham , Ashwin Samarao , Gary Yama
IPC分类号： G01N27/22 , B81B7/00
摘要： A trenched base capacitive humidity sensor includes a plurality of trenches formed in a conductive layer, such as polysilicon or metal, on a substrate. The trenches are arranged parallel to the each other and partition the conductive layer into a plurality of trenched silicon electrodes. At least two trenched silicon electrodes are configured to form a capacitive humidity sensor. The trenches that define the trenched silicon electrodes can be filled partially (e.g., sidewall coverage) or completely with polyimide (Pl) or silicon nitride (SiN). A polyimide layer may also be provided on the conductive layer over the trenches and trenched electrodes. The trenches and the trenched silicon electrodes may have different widths to enable different sensor characteristics in the same structure.

16. 发明申请

US20170082567A1 TRENCH BASED CAPACITIVE HUMIDITY SENSOR 审中-公开
公开(公告)号：US20170082567A1
公开(公告)日：2017-03-23
申请号：US13832904
申请日：2013-03-15
申请人： Robert Bosch Gmbh
发明人： Gary O'Brien , Ando Feyh , Andrew Graham , Ashwin Samarao , Gary Yama
IPC分类号： G01N27/22 , B81B7/00
CPC分类号： G01N27/223 , B81B7/0006 , B81B2201/0292 , G01N27/225
摘要： A trenched base capacitive humidity sensor includes a plurality of trenches formed in a conductive layer, such as polysilicon or metal, on a substrate. The trenches are arranged parallel to the each other and partition the conductive layer into a plurality of trenched silicon electrodes. At least two trenched silicon electrodes are configured to form a capacitive humidity sensor. The trenches that define the trenched silicon electrodes can be filled partially (e.g., sidewall coverage) or completely with polyimide (Pl) or silicon nitride (SiN). A polyimide layer may also be provided on the conductive layer over the trenches and trenched electrodes. The trenches and the trenched silicon electrodes may have different widths to enable different sensor characteristics in the same structure.

17. 发明申请

US20140169405A1 Sensor With An Embedded Thermistor For Precise Local Temperature Measurement 有权
标题翻译：具有嵌入式热敏电阻的传感器，用于精确的局部温度测量
公开(公告)号：US20140169405A1
公开(公告)日：2014-06-19
申请号：US14096306
申请日：2013-12-04
申请人： Robert Bosch GmbH
发明人： Andrew Graham , Ando Feyh , Gary O'Brien
IPC分类号： G01K7/22
CPC分类号： G01K7/226 , B81B7/008 , B81B7/0087 , B81B2201/0264 , B81B2207/03 , Y10T29/49085
摘要： A resistive temperature sensor (thermistor) for a microelectromechanical system (MEMS) device provides local temperatures of MEMS sensors and other MEMS devices for temperature compensation. Local accurate temperatures of the sensors and other devices provide for temperature compensation of such sensors or devices. By incorporating the thermistor structure into a MEMS device, an accurate temperature is sensed and measured adjacent to or within the structural layers of the device. In one embodiment, the thermistor is located within a few micrometers of the primary device.
摘要翻译：用于微机电系统（MEMS）器件的电阻式温度传感器（热敏电阻）提供MEMS传感器和其他MEMS器件的温度补偿的局部温度。传感器和其他设备的本地准确温度可提供这种传感器或设备的温度补偿。通过将热敏电阻结构结合到MEMS器件中，在设备的结构层附近或内部感测和测量精确的温度。在一个实施例中，热敏电阻位于主要装置的几微米内。

18. 发明申请

US20140167791A1 Resistive MEMS Humidity Sensor 审中-公开
标题翻译：电阻式MEMS湿度传感器
公开(公告)号：US20140167791A1
公开(公告)日：2014-06-19
申请号：US14108198
申请日：2013-12-16
申请人： Robert Bosch GmbH
发明人： Ando Feyh , Andrew Graham , Ashwin Samarao , Gary Yama , Gary O'Brien
IPC分类号： G01N27/04
CPC分类号： G01N27/121
摘要： A semiconductor device includes a substrate, an insulating film provided on a surface of the substrate, and a sensing film formed of a conductive material deposited on top of the insulating film. The sensing film defines at least one conductive path between a first position and a second position on the insulating film. A first circuit connection is electrically connected to the sensing film at the first position on the insulating layer, and a second circuit connection is electrically connected to the sensing film at the second position. A control circuit is operatively connected to the first circuit connection and the second circuit connection for measuring an electrical resistance of the sensing film. The sensing film has a thickness that enables a resistivity of the sensing film to be altered predictably in a manner that is dependent on ambient moisture content.
摘要翻译：半导体器件包括衬底，设置在衬底的表面上的绝缘膜和由沉积在绝缘膜的顶部上的导电材料形成的感测膜。感测膜在绝缘膜上的第一位置和第二位置之间限定至少一个导电路径。第一电路连接在绝缘层上的第一位置处电连接到感测膜，并且第二电路连接在第二位置电连接到感测膜。控制电路可操作地连接到第一电路连接和用于测量感测膜的电阻的第二电路连接。感测膜具有能够以取决于环境水分含量的方式预测地改变感测膜的电阻率的厚度。

19. 发明申请

US20140116122A1 COMBINED PRESSURE AND HUMIDITY SENSOR 审中-公开
标题翻译：组合式压力和湿度传感器
公开(公告)号：US20140116122A1
公开(公告)日：2014-05-01
申请号：US14062886
申请日：2013-10-25
申请人： Robert Bosch Tool Corporation , Robert Bosch GmbH
发明人： Gerhard Lammel , Sybille Waffenschmidt , Ando Feyh , Gary O'Brien , Andrew Graham
IPC分类号： G01N27/04 , G01N27/22
CPC分类号： G01N27/041 , G01D3/0365 , G01L19/0038 , G01L19/0092 , G01L19/141 , G01L19/143 , G01L19/147 , G01N27/223 , H01L2224/16225 , H01L2224/32145 , H01L2224/48091 , H01L2224/73253 , H01L2224/73265 , H01L2924/15174 , H01L2924/00014
摘要： A sensor device package includes a pressure sensor and a humidity sensor mounted on the same substrate and in the same housing with light protection for the pressure sensor a media opening for gas exchange for the humidity sensor. Light protection and rapid response times are provided through strategic positioning of the media opening, strategic arrangement of the pressure sensor, humidity sensor, and the media opening, and/or the use of opaque materials.
摘要翻译：一种传感器装置包括一个压力传感器和一个湿度传感器，该传感器和湿度传感器安装在相同的基板上，同时在相同的外壳中，具有用于压力传感器的光保护器，用于湿度传感器的气体交通过介质打开的策略性定位，压力传感器的策略布置，湿度传感器和介质打开，和/或使用不透明材料来提供光保护和快速响应时间。

20. 发明申请

US20160137485A1 Epi-Poly Etch Stop for Out of Plane Spacer Defined Electrode 有权
标题翻译：用于平面间隔定子电极的Epi-Poly蚀刻停止
公开(公告)号：US20160137485A1
公开(公告)日：2016-05-19
申请号：US14201453
申请日：2014-03-07
申请人： Robert Bosch GmbH
发明人： Andrew Graham , Gary Yama , Gary O'Brien
IPC分类号： B81B3/00 , B81C1/00
CPC分类号： B81B3/0021 , B81B2201/0271 , B81B2203/04 , B81B2203/053 , B81C1/00095 , B81C1/00166 , B81C2201/0132 , B81C2201/014 , B81C2201/0177 , B81C2203/0136
摘要： In one embodiment, a method of forming an out-of-plane electrode includes forming an oxide layer above an upper surface of a device layer, etching an etch stop perimeter defining trench extending through the oxide layer, forming a first cap layer portion on an upper surface of the oxide layer and within the etch stop perimeter defining trench, etching a first electrode perimeter defining trench extending through the first cap layer portion and stopping at the oxide layer, depositing a first material portion within the first electrode perimeter defining trench, depositing a second cap layer portion above the deposited first material portion, and vapor releasing a portion of the oxide layer with the etch stop portion providing a lateral etch stop.
摘要翻译：在一个实施例中，形成平面外电极的方法包括在器件层的上表面上形成氧化物层，蚀刻限定延伸穿过氧化物层的沟槽的蚀刻停止周界，在第一帽层部分上形成氧化物层的上表面，并且在蚀刻停止周界内限定沟槽，蚀刻延伸穿过第一盖层部分并停止在氧化物层处的第一电极周界，限定沟槽，在第一电极周界限定沟槽内沉积第一材料部分，沉积在沉积的第一材料部分上方的第二盖层部分，以及用蚀刻停止部分提供横向蚀刻停止物的一部分氧化物层的蒸气。

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