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    • 13. 发明申请
    • Implanting a substrate using an ion beam
    • 使用离子束植入底物
    • US20060289800A1
    • 2006-12-28
    • US11386090
    • 2006-03-22
    • Adrian MurrellSteven UnderwoodMajeed Foad
    • Adrian MurrellSteven UnderwoodMajeed Foad
    • H01J37/08
    • H01J37/3171H01J2237/30411
    • This invention relates to a method of implanting a substrate comprising scanning an ion beam relative to a substrate along a series of scan lines extending in a first direction, causing relative rotation between the substrate and the ion beam, scanning the ion beam along a second series of scan lines in a different direction. The implant recipe is changed during scanning in each direction such that different regions are produced during each scanning step. The regions so formed during the two scanning steps overlap such that different parts of the substrate receive different doses according to different recipes during the implantation process. The different recipes may result in different dopant concentrations, doping depths or even different dopant species.
    • 本发明涉及一种植入衬底的方法,包括沿着沿着第一方向延伸的一系列扫描线相对于衬底扫描离子束,引起衬底和离子束之间的相对旋转,沿着第二系列扫描离子束 的扫描线在不同的方向。 在每个方向的扫描期间改变植入物配方,使得在每个扫描步骤期间产生不同的区域。 在两个扫描步骤期间形成的区域重叠,使得在植入过程期间根据不同配方接收不同剂量的基底。 不同的配方可能导致不同的掺杂剂浓度,掺杂深度或甚至不同的掺杂物种类。
    • 16. 发明授权
    • Ion implanters
    • 离子注入机
    • US07928413B2
    • 2011-04-19
    • US12003962
    • 2008-01-03
    • Gregory Robert AlcottAdrian Murrell
    • Gregory Robert AlcottAdrian Murrell
    • G21K5/00
    • H01J37/3171H01J37/04H01J2237/0213H01J2237/022H01J2237/04756
    • The present invention relates to components in an ion implanter that may see incidence of the ion beam, such as a beam dump or a beam stop. Such components will be prone to the ions sputtering material from their surfaces, and sputtered material may become entrained in the ion beam. This entrained material is a source of contamination. The present invention provides an ion implanter comprising power supply apparatus and an ion-receiving component. The component has an opening that receives ions from an ion beam such that ions strike an internal surface. The power supply apparatus is arranged to provide an electrical bias to the internal surface to decelerate the ions prior to their striking the surface, thereby mitigating the problem of material being sputtered from the surface.
    • 本发明涉及离子注入机中的组件,其可以看到离子束的入射,例如光束倾倒或光束停止。 这些组分将倾向于从它们的表面离子溅射材料,并且溅射的材料可能被夹带在离子束中。 这种夹带的材料是污染源。 本发明提供了一种离子注入机,其包括电源装置和离子接收部件。 该组件具有从离子束接收离子的开口,使得离子撞击内表面。 供电装置被布置成在离开表面之前向内表面提供电偏压以使离子减速,从而减轻从表面溅射的材料的问题。
    • 18. 发明申请
    • Ion beam extraction assembly in an ion implanter
    • 离子束提取组件在离子注入机中
    • US20090101834A1
    • 2009-04-23
    • US11976322
    • 2007-10-23
    • Lee SpraggonAdrian Murrell
    • Lee SpraggonAdrian Murrell
    • H01J27/00
    • H01J27/024H01J37/08H01J37/3171
    • The present invention relates to an ion beam extraction assembly for use in an ion beam generation apparatus such as those used, for example, in an ion implanter. An ion beam extraction assembly is provided for mounting within an ion beam generating apparatus comprising an ion source such that the extraction assembly is operable to extract ions from the ion source as an ion beam. The extraction assembly comprises an electrode assembly separate from the ion source, an electrode of the electrode assembly defining at least partly a path through the extraction assembly for passage of an ion beam. At least a part of the electrode assembly adjacent the path is tungsten and at least a part of the electrode assembly that is remote from the path is formed from a less expensive and/or lighter material.
    • 本发明涉及用于离子束产生装置中的离子束提取组件,例如用于离子注入机中的那些。 提供离子束提取组件,用于安装在包括离子源的离子束发生装置内,使得提取组件可操作以从离子源提取离子作为离子束。 提取组件包括与离子源分离的电极组件,电极组件的电极至少部分地限定通过提取组件的通过离子束的路径。 邻近路径的电极组件的至少一部分是钨,远离路径的电极组件的至少一部分由较便宜和/或较轻的材料形成。