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11. 发明授权

US06741445B1 Method and system to monitor and control electro-static discharge 失效
标题翻译：监测和控制静电放电的方法和系统
公开(公告)号：US06741445B1
公开(公告)日：2004-05-25
申请号：US10050458
申请日：2002-01-16
申请人： Khoi A. Phan , Bhanwar Singh , Bharath Rangarajan , Ramkumar Subramanian
发明人： Khoi A. Phan , Bhanwar Singh , Bharath Rangarajan , Ramkumar Subramanian
IPC分类号： H01T2300
CPC分类号： H01L21/67253
摘要： A system and methodology is provided for monitoring and controlling static charge during wafer and mask fabrication. The static charge on a target device is monitored. If the static charge becomes too high, corrective actions are taken to reduce the static charge. An antistatic solution is dispensed on the target device. The system and methodology provided reduce damage resulting from electrostatic discharge during fabrication. The system and methodology also reduce delays during fabrication by automatically controlling static charge without the need for manual intervention.
摘要翻译：提供了一种用于在晶片和掩模制造期间监测和控制静电荷的系统和方法。监视目标设备上的静电荷。如果静电荷过高，则采取纠正措施减少静电。抗静电溶液分配在目标装置上。所提供的系统和方法减少了制造过程中静电放电造成的损坏。该系统和方法还通过自动控制静电而减少制造过程中的延迟，而无需人工干预。

12. 发明授权

US06684172B1 Sensor to predict void free films using various grating structures and characterize fill performance 失效
标题翻译：传感器预测使用各种光栅结构的无空隙膜，并表征填充性能
公开(公告)号：US06684172B1
公开(公告)日：2004-01-27
申请号：US10034165
申请日：2001-12-27
申请人： Ramkumar Subramanian , Steven C. Avanzino , Christopher F. Lyons , Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh , Cyrus E. Tabery
发明人： Ramkumar Subramanian , Steven C. Avanzino , Christopher F. Lyons , Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh , Cyrus E. Tabery
IPC分类号： G01L2500
CPC分类号： C23C16/52 , C23C14/547 , C23C18/1675 , C25D21/12 , H01L21/76877
摘要： One aspect of the invention relates to a metal fill process and systems therefor involving providing a standard calibration wafer having a plurality of fill features of known dimensions in a metalization tool; depositing a metal material over the standard calibration wafer; monitoring the deposition of metal material using a sensor system, the sensor system operable to measure one or more fill process parameters and to generate fill process data; controlling the deposition of metal material to minimize void formation using a control system wherein the control system receives fill process data from the sensor system and analyzes the fill process data to generate a feed-forward control data operative to control the metalization tool; and depositing metal material over a production wafer in the metalization tool using the fill process data generated by the sensor system and the control system. The invention further relates to tool characterization processes and systems therefor.
摘要翻译：本发明的一个方面涉及一种金属填充方法及其系统，其涉及在金属化工具中提供具有已知尺寸的多个填充特征的标准校准晶片; 在标准校准晶片上沉积金属材料; 使用传感器系统监测金属材料的沉积，所述传感器系统可操作以测量一个或多个填充过程参数并产生填充过程数据; 控制金属材料的沉积以最小化使用控制系统的空隙形成，其中控制系统从传感器系统接收填充过程数据并分析填充过程数据以产生可操作以控制金属化工具的前馈控制数据; 以及使用由传感器系统和控制系统产生的填充过程数据在金属化工具中的生产晶片上沉积金属材料。本发明还涉及其工具表征过程及其系统。

13. 发明授权

US06613500B1 Reducing resist residue defects in open area on patterned wafer using trim mask 有权
标题翻译：使用修剪掩模减少图案化晶片上的开放区域中的抗蚀剂残留缺陷
公开(公告)号：US06613500B1
公开(公告)日：2003-09-02
申请号：US09824079
申请日：2001-04-02
申请人： Khoi A. Phan , Bhanwar Singh , Ramkumar Subramanian , Michael K. Templeton , Jeff Erhardt
发明人： Khoi A. Phan , Bhanwar Singh , Ramkumar Subramanian , Michael K. Templeton , Jeff Erhardt
IPC分类号： G03F700
CPC分类号： G03F7/70425 , G03F7/2022 , G03F7/203 , G03F7/70466
摘要： One aspect of the present invention relates to a method for reducing resist residue defects on a wafer structure. The method involves providing a semiconductor structure having a photoresist, the photoresist comprising open areas and circuit areas thereon; irradiating the open areas and circuit areas through a first photomask with a first energy dose to effect an image-wise pattern in the photoresist; irradiating the open areas of the photoresist through a second photomask with a second energy dose; and developing the photoresist.
摘要翻译：本发明的一个方面涉及减少晶片结构上的抗蚀剂残留缺陷的方法。该方法包括提供具有光致抗蚀剂的半导体结构，光致抗蚀剂包括开放区域和其上的电路区域; 通过具有第一能量剂量的第一光掩模照射开放区域和电路区域以在光致抗蚀剂中实现成像图案; 通过具有第二能量剂量的第二光掩模照射光致抗蚀剂的开放区域; 并显影光致抗蚀剂。

14. 发明授权

US06594024B1 Monitor CMP process using scatterometry 有权
标题翻译：使用散点法监测CMP过程
公开(公告)号：US06594024B1
公开(公告)日：2003-07-15
申请号：US09886863
申请日：2001-06-21
申请人： Bhanwar Singh , Ramkumar Subramanian , Khoi A. Phan , Bharath Rangarajan , Carmen Morales
发明人： Bhanwar Singh , Ramkumar Subramanian , Khoi A. Phan , Bharath Rangarajan , Carmen Morales
IPC分类号： G01B1128
CPC分类号： B24B37/005 , B24B49/12 , G01N21/47 , G01N21/9501 , H01L21/30625
摘要： One aspect of the present invention relates to an in-line system for monitoring and optimizing an on-going CMP process in order to determine a CMP process endpoint comprising a wafer, wherein the wafer is subjected to the CMP process; a CMP process monitoring system for generating a signature related to wafer dimensions for the wafer subjected to the CMP process; and a signature library to which the generated signature is compared to determine a state of the wafer. Another aspect relates to an in-line method for monitoring and optimizing an on-going CMP process involving providing a wafer, wherein the wafer is subjected to a CMP process; generating a signature associated with the wafer; comparing the generated signature to a signature library to determine a state of the wafer; and using a closed-loop feedback control system for modifying the on-going CMP process according to the determined state of the wafer.
摘要翻译：本发明的一个方面涉及用于监测和优化正在进行的CMP工艺的在线系统，以便确定包括晶片的CMP工艺端点，其中晶片经历CMP工艺; 用于生成与经历CMP处理的晶片的晶片尺寸相关的签名的CMP过程监控系统; 以及生成的签名被比较的签名库，以确定晶片的状态。另一方面涉及用于监测和优化涉及提供晶片的正在进行的CMP工艺的在线方法，其中所述晶片经受CMP工艺; 产生与晶片相关联的签名; 将生成的签名与签名库进行比较以确定晶片的状态; 以及使用闭环反馈控制系统来根据所确定的晶片状态来修正正在进行的CMP工艺。

15. 发明授权

US06444381B1 Electron beam flood exposure technique to reduce the carbon contamination 有权
标题翻译：电子束泛滥技术减少碳污染
公开(公告)号：US06444381B1
公开(公告)日：2002-09-03
申请号：US09729295
申请日：2000-12-04
申请人： Bhanwar Singh , Ramkumar Subramanian , Michael K. Templeton , Bharath Rangarajan , Khoi A. Phan , Bryan K. Choo , Sanjay K. Yedur
发明人： Bhanwar Singh , Ramkumar Subramanian , Michael K. Templeton , Bharath Rangarajan , Khoi A. Phan , Bryan K. Choo , Sanjay K. Yedur
IPC分类号： G03F900
CPC分类号： G03F1/74 , Y10S430/143
摘要： One aspect of the present invention relates to a method for reducing carbon contamination on a mask involving placing a mask plate having carbon-containing contaminants thereon in a processing chamber; simultaneously contacting the mask plate with oxygen and exposing the mask plate with a flood exposure of electron beams wherein the carbon-containing contaminants are converted to a by-product; and removing the by-product from the processing chamber.
摘要翻译：本发明的一个方面涉及一种用于减少掩模上的碳污染的方法，其涉及将具有含碳污染物的掩模板放置在处理室中; 同时使掩模板与氧气接触，并将电子束的暴露暴露于掩模板，其中含碳污染物转化为副产物; 并从处理室中除去副产物。

16. 发明授权

US06322009B1 Common nozzle for resist development 有权
标题翻译：普通喷嘴用于抗蚀剂开发
公开(公告)号：US06322009B1
公开(公告)日：2001-11-27
申请号：US09429992
申请日：1999-10-29
申请人： Ramkumar Subramanian , Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh
发明人： Ramkumar Subramanian , Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh
IPC分类号： B05B900
CPC分类号： H01L21/6708 , H01L21/67051
摘要： A combination nozzle for applying a developer material and a washing solution material at different time intervals to a photoresist material layer disposed on a wafer is provided. The combination nozzle includes a number of developer nozzle tips connected to a developer supply line and a number of washing solution nozzle tips connected to a washing solution supply line. The developer supply line and the washing solution supply line ensure that the developer material and the washing solution material are always substantially isolated from one another. Furthermore, the developer nozzle tips and the washing solution nozzle tips are arranged so that developer material and washing solution material do not come into contact with one another. The volume of the material and the volume flow of the material can be controlled by electronically controlled valves.
摘要翻译：提供了用于将显影剂材料和洗涤液材料以不同的时间间隔施加到设置在晶片上的光致抗蚀剂材料层的组合喷嘴。组合喷嘴包括连接到显影剂供应管线的多个显影剂喷嘴尖端和连接到洗涤溶液供应管线的多个洗涤溶液喷嘴尖端。显影剂供应管线和洗涤溶液供应管线确保显影剂材料和洗涤液材料总是基本上彼此隔离。此外，显影剂喷嘴尖端和洗涤溶液喷嘴尖端被布置成使得显影剂材料和洗涤液材料彼此不接触。材料的体积和材料的体积流量可以通过电子控制阀来控制。

17. 发明授权

US07289193B1 Frame structure for turbulence control in immersion lithography 失效
标题翻译：浸没光刻中湍流控制的框架结构
公开(公告)号：US07289193B1
公开(公告)日：2007-10-30
申请号：US11000654
申请日：2004-12-01
申请人： Ramkumar Subramanian , Bhanwar Singh , Khoi A. Phan
发明人： Ramkumar Subramanian , Bhanwar Singh , Khoi A. Phan
IPC分类号： G03B27/54 , G03B27/42
CPC分类号： G03F7/70341
摘要： Disclosed are systems and methods that employ a structural framework of cell gratings placed on a wafer surface during an immersion lithography process to restrict motion of the immersion fluid. Thus, when the stepper lens comes in contact with the immersion fluid, a typically stable immersion fluid dynamics can be maintained with the cells during the immersion lithography process. In addition, various monitoring and control systems are employed to regulate stability of the immersion fluid.
摘要翻译：公开了在浸没光刻工艺期间采用放置在晶片表面上的单元格栅的结构框架以限制浸没流体的运动的系统和方法。因此，当步进透镜与浸没流体接触时，在浸没光刻工艺期间可以与电池一起保持典型稳定的浸没流体动力学。此外，采用各种监控系统来调节浸液的稳定性。

18. 发明授权

US06844206B1 Refractive index system monitor and control for immersion lithography 失效
$Refractive index system monitor and control for immersion lithography$
标题翻译：折射率系统监测和控制浸没光刻
公开(公告)号：US06844206B1
公开(公告)日：2005-01-18
申请号：US10645363
申请日：2003-08-21
申请人： Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh , Ramkumar Subramanian
发明人： Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh , Ramkumar Subramanian
IPC分类号： G03F7/20 , H01L21/00 , G03C5/00
CPC分类号： G03F7/70341
摘要： A system and/or method are disclosed for measuring and/or controlling refractive index (n) and/or lithographic constant (k) of an immersion medium utilized in connection with immersion lithography. A known grating structure is built upon a substrate. A refractive index monitoring component facilitates measuring and/or controlling the immersion medium by utilizing detected light scattered from the known grating structure.
摘要翻译：公开了用于测量和/或控制与浸没式光刻相关联的浸渍介质的折射率（n）和/或光刻常数（k）的系统和/或方法。已知的光栅结构被构建在衬底上。折射率监测部件通过利用从已知光栅结构散射的检测光，便于测量和/或控制浸没介质。

19. 发明授权

US06808591B1 Model based metal overetch control 有权
标题翻译：基于型号的金属防腐控制
公开(公告)号：US06808591B1
公开(公告)日：2004-10-26
申请号：US10021531
申请日：2001-12-12
申请人： Khoi A. Phan , Bharath Rangarajan , Christopher F. Lyons , Steven C. Avanzino , Ramkumar Subramanian , Bhanwar Singh , Cyrus E. Tabery
发明人： Khoi A. Phan , Bharath Rangarajan , Christopher F. Lyons , Steven C. Avanzino , Ramkumar Subramanian , Bhanwar Singh , Cyrus E. Tabery
IPC分类号： H01L21302
CPC分类号： H01L21/67253 , H01L21/32136
摘要： A systems and methodologies are provided for metal overetch control. Metal overetch processes are controlled by utilizing overetch device models to determine overetch times or overetch endpoints. The systems and methodologies reduce the need for manual testing and manual overetch characterization. An overetch system includes a metal etcher, a target device and an overetch controller. The target device is located in or on the metal etcher. The overetch controller is coupled to the metal etcher. The overetch controller controls overetching of the target device by the metal etcher. The overetch controller includes an overetch time controller, a set of etch control models and a control system.
摘要翻译：提供了用于金属过程控制的系统和方法。通过利用过滤设备模型来确定金属过蚀刻过程以确定过蚀刻时间或过程延伸端点。系统和方法减少了手动测试和手动过程表征的需要。一种过蚀系统包括金属蚀刻机，目标装置和过程控制器。目标设备位于金属蚀刻机中或其上。该过程控制器耦合到金属蚀刻器。过程控制器通过金属蚀刻器控制目标器件的过蚀刻。该过程控制器包括一个过时延时间控制器，一组蚀刻控制模型和一个控制系统。

20. 发明授权

US06583871B1 System and method to measure closed area defects 有权
标题翻译：测量封闭区域缺陷的系统和方法
公开(公告)号：US06583871B1
公开(公告)日：2003-06-24
申请号：US09911238
申请日：2001-07-23
申请人： Bharath Rangarajan , Bhanwar Singh , Khoi A. Phan , Ramkumar Subramanian
发明人： Bharath Rangarajan , Bhanwar Singh , Khoi A. Phan , Ramkumar Subramanian
IPC分类号： G01N2100
CPC分类号： G01N21/956 , G01N21/9501
摘要： A system adapted to provide in-situ detection of closed area defects and a method for the same is provided. The system comprises a light source for directing light on to a wafer having a grating pattern etched thereon; a light detector for collecting the light reflected from the wafer; a processor operatively coupled to the light detector for converting the collected light into data associated with the grating pattern and determining the presence of the closed area defect; and a controller operatively coupled to the processor for determining whether the wafer requires additional processing to repair the closed area defect.
摘要翻译：提供一种适于提供闭合区域缺陷的原位检测的系统及其方法。该系统包括用于将光引导到具有蚀刻在其上的光栅图案的晶片的光源; 用于收集从晶片反射的光的光检测器; 处理器，其可操作地耦合到所述光检测器，用于将所收集的光转换成与所述光栅图案相关联的数据，并确定所述封闭区域缺陷的存在; 以及可操作地耦合到所述处理器的控制器，用于确定所述晶片是否需要额外的处理以修复所述封闭区域缺陷。

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