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11. 发明授权

US07054208B2 Method and device for testing a sense amp 失效
标题翻译：检测放大器的方法和装置
公开(公告)号：US07054208B2
公开(公告)日：2006-05-30
申请号：US11076472
申请日：2005-03-08
申请人： Kurt D. Beigel , Douglas J. Cutter
发明人： Kurt D. Beigel , Douglas J. Cutter
IPC分类号： G11C7/00
CPC分类号： G11C29/026 , G11C11/401 , G11C29/02 , G11C29/025 , G11C29/028 , G11C29/12 , G11C29/44 , G11C29/48 , G11C29/50 , G11C29/50012 , G11C29/56 , G11C2029/5004
摘要： As part of a memory array, a circuit is provided for altering the drive applied to an access transistor that regulates electrical communication within the memory array. In one embodiment, the circuit is used to alter the drive applied to a sense amp's voltage-pulling transistor, thereby allowing modification of the voltage-pulling rate for components of the sense amp. A sample of test data is written to the memory array and read several times at varying drive rates in order to determine the sense amp's ability to accommodate external circuitry. In another embodiment, the circuit is used to alter the drive applied to a bleeder device that regulates communication between the digit lines of the memory array and its cell plate. Slowing communication allows defects within the memory array to have a more pronounced effect and hence increases the chances of finding such defects during testing. The circuit is configured to accept and apply a plurality of voltages, either through a contact pad or from a series of discrete voltage sources coupled to the circuit.
摘要翻译：作为存储器阵列的一部分，提供了用于改变施加到调节存储器阵列内的电通信的存取晶体管的驱动电路的电路。在一个实施例中，该电路用于改变施加到感测放大器的电压 - 牵引晶体管的驱动，从而允许改变感测放大器部件的电压提升率。将测试数据的样本写入存储器阵列，并以变化的驱动速率读取数次，以便确定感测放大器容纳外部电路的能力。在另一个实施例中，电路用于改变施加到泄放装置的驱动，其调节存储器阵列的数字线与其单元板之间的通信。缓慢的通信允许存储器阵列中的缺陷具有更显着的效果，因此增加了在测试期间发现这些缺陷的机会。电路被配置为通过接触焊盘或耦合到电路的一系列离散电压源来接受和施加多个电压。

12. 发明授权

US6011731A Cell plate regulator 失效
标题翻译：电池板调节器
公开(公告)号：US6011731A
公开(公告)日：2000-01-04
申请号：US259221
申请日：1999-03-01
申请人： Kurt D. Beigel , Manny K. Ma , Gordon D. Roberts , James E. Miller , Daryl L. Habersetzer , Jeffrey D. Bruce , Eric T. Stubbs
发明人： Kurt D. Beigel , Manny K. Ma , Gordon D. Roberts , James E. Miller , Daryl L. Habersetzer , Jeffrey D. Bruce , Eric T. Stubbs
IPC分类号： G11C7/00 , G11C29/02 , G11C29/12 , G11C29/44 , G11C29/48 , G11C29/50 , G11C29/56
CPC分类号： G11C29/026 , G11C29/02 , G11C29/025 , G11C29/028 , G11C29/12 , G11C29/44 , G11C29/48 , G11C29/50 , G11C29/50012 , G11C29/56 , G11C11/401 , G11C2029/5004
摘要： As part of a memory array, a circuit is provided for altering the drive applied to an access transistor that regulates electrical communication within the memory array. In one embodiment, the circuit is used to alter the drive applied to a sense amp's voltage-pulling transistor, thereby allowing modification of the voltage-pulling rate for components of the sense amp. A sample of test data is written to the memory array and read several times at varying drive rates in order to determine the sense amp's ability to accommodate external circuitry. In another embodiment, the circuit is used to alter the drive applied to a bleeder device that regulates communication between the digit lines of the memory array and its cell plate. Slowing said communication allows defects within the memory array to have a more pronounced effect and hence increases the chances of finding such defects during testing. The circuit is configured to accept and apply a plurality of voltages, either through a contact pad or from a series of discrete voltage sources coupled to the circuit.
摘要翻译：作为存储器阵列的一部分，提供了用于改变施加到调节存储器阵列内的电通信的存取晶体管的驱动电路的电路。在一个实施例中，该电路用于改变施加到感测放大器的电压 - 牵引晶体管的驱动，从而允许改变感测放大器部件的电压提升率。将测试数据的样本写入存储器阵列，并以变化的驱动速率读取数次，以便确定感测放大器容纳外部电路的能力。在另一个实施例中，电路用于改变施加到泄放装置的驱动，其调节存储器阵列的数字线与其单元板之间的通信。减轻所述通信允许存储器阵列中的缺陷具有更显着的效果，并因此增加在测试期间发现这些缺陷的机会。电路被配置为通过接触焊盘或耦合到电路的一系列离散电压源来接受和施加多个电压。

13. 发明授权

US5991187A Method for programming semiconductor junctions and for using the programming to control the operation of an integrated device 有权
标题翻译：用于编程半导体结以及使用编程来控制集成器件的操作的方法
公开(公告)号：US5991187A
公开(公告)日：1999-11-23
申请号：US206784
申请日：1998-12-07
申请人： Douglas J. Cutter , Kurt D. Beigel
发明人： Douglas J. Cutter , Kurt D. Beigel
IPC分类号： G11C17/16 , G11C17/18 , H01L27/105 , G11C17/00
CPC分类号： H01L27/105 , G11C17/16 , G11C17/18
摘要： An integrated semiconductor junction antifuse is formed from either adjacent regions of opposite doping types or spaced apart regions of similar doping type within a substrate. In its unblown state, the junction antifuse forms an open circuit that blocks current from flowing while in the blown state, the junction antifuse conducts current. The junction antifuse is blown by applying a breakdown voltage sufficient to overcome a semiconductor junction so that current flows across the reverse-biased semiconductor junction. As current flows across the reverse-biased junction, dopant migration forms a conductive path so that the junction antifuse no longer forms an open circuit.
摘要翻译：集成半导体结反熔丝由衬底内相似掺杂类型的相邻区域或类似掺杂类型的间隔开的区域形成。在其未吹塑状态下，结合反熔丝形成开路，其在处于吹制状态时阻止电流流动，接点反熔丝导通电流。通过施加足以克服半导体结的击穿电压来使得结反熔丝熔断，使得电流流过反向偏置的半导体结。当电流流过反向偏置结时，掺杂剂迁移形成导电路径，使得结型反熔丝不再形成开路。

14. 发明授权

US5838625A Anti-fuse programming path 失效
公开(公告)号：US5838625A
公开(公告)日：1998-11-17
申请号：US742820
申请日：1996-10-29
申请人： Douglas J. Cutter , Fan Ho , Kurt D. Beigel
发明人： Douglas J. Cutter , Fan Ho , Kurt D. Beigel
IPC分类号： G11C17/18 , G11C17/16
CPC分类号： G11C17/18
摘要： A programmable circuit in an integrated circuit provides a programmed signal, which is based on the state of a first node. An anti-fuse includes a first terminal coupled to the first node and a second terminal coupled to a programming bus. An anti-fuse programming pad is coupled to the first programming bus for permitting a sufficient voltage to short the first anti-fuse to be applied to the first programming bus from external to the integrated circuit. The state of the programmed signal can be used to replace a primary circuit element in the integrated circuit, such a row or column of memory cells in a memory integrated circuit, with a redundant circuit element.

15. 发明申请

US20130026562A1 VERTICAL MEMORY CELL 有权
标题翻译：垂直存储单元
公开(公告)号：US20130026562A1
公开(公告)日：2013-01-31
申请号：US13192207
申请日：2011-07-27
申请人： Kurt D. Beigel , Sanh D. Tang
发明人： Kurt D. Beigel , Sanh D. Tang
IPC分类号： H01L29/78 , H01L21/265
CPC分类号： H01L29/0638 , H01L27/1027 , H01L27/10802 , H01L29/0688 , H01L29/7841 , H01L29/78642 , H01L29/7889
摘要： Methods of forming, devices, and apparatus associated with a vertical memory cell are provided. One example method of forming a vertical memory cell can include forming a semiconductor structure over a conductor line. The semiconductor structure can have a first region that includes a first junction between first and second doped materials. An etch-protective material is formed on a first pair of sidewalls of the semiconductor structure above the first region. A volume of the first region is reduced relative to a body region of the semiconductor structure in a first dimension.
摘要翻译：提供了形成装置的方法以及与垂直存储单元相关联的装置。形成垂直存储单元的一个示例性方法可以包括在导体线上形成半导体结构。半导体结构可以具有包括第一和第二掺杂材料之间的第一结的第一区域。在第一区域上方的半导体结构的第一对侧壁上形成蚀刻保护材料。第一区域的体积相对于半导体结构的体区在第一维度上减小。

16. 发明授权

US06462608B2 Low current redundancy anti-fuse apparatus 失效
标题翻译：低电流冗余反熔丝装置
公开(公告)号：US06462608B2
公开(公告)日：2002-10-08
申请号：US08896490
申请日：1997-07-18
申请人： Douglas J. Cutter , Kurt D. Beigel , Fan Ho
发明人： Douglas J. Cutter , Kurt D. Beigel , Fan Ho
IPC分类号： H01H3776
CPC分类号： G11C29/785 , G11C17/18 , G11C29/83
摘要： A programmable circuit includes a first node and provides a programmed signal based on the state of the first node. A first anti-fuse has a programmed state and an unprogrammed state and couples the first node to a first power supply when in the programmed state and decouples the first node from the first power supply when in the unprogrammed state. A second anti-fuse has a programmed state and an unprogrammed state and couples the first node to a second power supply when in the programmed state and decouples the first node from the second power supply when in the unprogrammed state. The state of the programmed signal can be used to replace a primary circuit element of an integrated circuit with a redundant circuit element.
摘要翻译：可编程电路包括第一节点并且基于第一节点的状态提供编程信号。第一反熔丝具有编程状态和未编程状态，并且当处于编程状态时将第一节点耦合到第一电源并且当处于未编程状态时将第一节点与第一电源解耦。第二反熔丝具有编程状态和未编程状态，并且当处于编程状态时将第一节点耦合到第二电源，并且当处于未编程状态时将第一节点与第二电源解耦。编程信号的状态可用于用冗余电路元件代替集成电路的主电路元件。

17. 发明授权

US06456149B2 Low current redundancy anti-fuse method and apparatus 有权
公开(公告)号：US06456149B2
公开(公告)日：2002-09-24
申请号：US09794685
申请日：2001-02-27
申请人： Douglas J. Cutter , Kurt D. Beigel , Fan Ho
发明人： Douglas J. Cutter , Kurt D. Beigel , Fan Ho
IPC分类号： H01H3776
CPC分类号： G11C29/785 , G11C17/18 , G11C29/83
摘要： A programmable circuit includes a first node and provides a programmed signal based on the state of the first node. A first anti-fuse has a programmed state and an unprogrammed state and couples the first node to a first power supply when in the programmed state and decouples the first node from the first power supply when in the unprogrammed state. A second anti-fuse has a programmed state and an unprogrammed state and couples the first node to a second power supply when in the programmed state and decouples the first node from the second power supply when in the unprogrammed state. The state of the programmed signal can be used to replace a primary circuit element of an integrated circuit with a redundant circuit element.

18. 发明授权

US06444558B1 Methods of forming and programming junctionless antifuses 有权
标题翻译：无连接反熔丝的形成和编程方法
公开(公告)号：US06444558B1
公开(公告)日：2002-09-03
申请号：US09130781
申请日：1998-08-07
申请人： Douglas J. Cutter , Fan Ho , Kurt D. Beigel
发明人： Douglas J. Cutter , Fan Ho , Kurt D. Beigel
IPC分类号： H01L2900
CPC分类号： H01L23/5252 , H01L2924/0002 , H01L2924/00
摘要： A method and apparatus for forming a junctionless antifuse semiconductor structure comprises forming an antifuse in non-active areas of a semiconductor wafer. In one embodiment, the antifuse is formed over a polysilicon layer, which is coupled to a field oxide layer. In a further embodiment, the polysilicon layer comprises a bottom conductor layer in the antifuse. In another embodiment, a refractory metal silicide layer is formed between the polysilicon layer and the antifuse. In yet a further embodiment, the refractory metal silicide layer comprises the bottom conductor layer in the antifuse.
摘要翻译：用于形成无连接反熔丝半导体结构的方法和装置包括在半导体晶片的非有源区域中形成反熔丝。在一个实施例中，反熔丝形成在多晶硅层上，多晶硅层与场氧化物层耦合。在另一实施例中，多晶硅层包括反熔丝中的底部导体层。在另一个实施例中，在多晶硅层和反熔丝之间形成难熔金属硅化物层。在又一个实施例中，难熔金属硅化物层包括反熔丝中的底部导体层。

19. 发明授权

US6154398A Low current redundancy anti-fuse method and apparatus 失效
公开(公告)号：US6154398A
公开(公告)日：2000-11-28
申请号：US896702
申请日：1997-07-18
申请人： Douglas J. Cutter , Kurt D. Beigel , Fan Ho
发明人： Douglas J. Cutter , Kurt D. Beigel , Fan Ho
IPC分类号： G11C17/18 , G11C29/00 , G11C7/00
CPC分类号： G11C29/785 , G11C17/18 , G11C29/83
摘要： A programmable circuit includes a first node and provides a programmed signal based on the state of the first node. A first anti-fuse has a programmed state and an unprogrammed state and couples the first node to a first power supply when in the programmed state and decouples the first node from the first power supply when in the unprogrammed state. A second anti-fuse has a programmed state and an unprogrammed state and couples the first node to a second power supply when in the programmed state and decouples the first node from the second power supply when in the unprogrammed state. The state of the programmed signal can be used to replace a primary circuit element of an integrated circuit with a redundant circuit element.

20. 发明授权

US6023431A Low current redundancy anti-fuse method and apparatus 失效
公开(公告)号：US6023431A
公开(公告)日：2000-02-08
申请号：US724851
申请日：1996-10-03
申请人： Douglas J. Cutter , Kurt D. Beigel , Fan Ho
发明人： Douglas J. Cutter , Kurt D. Beigel , Fan Ho
IPC分类号： G11C17/18 , G11C29/00 , G11C7/00
CPC分类号： G11C29/785 , G11C17/18 , G11C29/83
摘要： A programmable circuit includes a first node and provides a programmed signal based on the state of the first node. A first anti-fuse has a programmed state and an unprogrammed state and couples the first node to a first power supply when in the programmed state and decouples the first node from the first power supply when in the unprogrammed state. A second anti-fuse has a programmed state and an unprogrammed state and couples the first node to a second power supply when in the programmed state and decouples the first node from the second power supply when in the unprogrammed state. The state of the programmed signal can be used to replace a primary circuit element of an integrated circuit with a redundant circuit element.

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