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11. 发明申请

US20150162243A1 SCREEN PRINT MASK FOR LASER SCRIBE AND PLASMA ETCH WAFER DICING PROCESS 有权
标题翻译：用于激光扫描和等离子体蚀刻抛光过程的屏幕打印面罩
公开(公告)号：US20150162243A1
公开(公告)日：2015-06-11
申请号：US14099707
申请日：2013-12-06
申请人： Prabhat Kumar , Brad Eaton , Wei-Sheng Lei , James S. Papanu , Ajay Kumar
发明人： Prabhat Kumar , Brad Eaton , Wei-Sheng Lei , James S. Papanu , Ajay Kumar
IPC分类号： H01L21/78 , H01L21/3065 , B41F15/08 , H01J37/32 , H01L21/67 , H01L21/304 , B23K26/36
CPC分类号： H01L21/78 , B23K26/364 , B41F15/08 , H01J37/32091 , H01J37/321 , H01J2237/334 , H01L21/3043 , H01L21/3065 , H01L21/67207
摘要： Methods of using a screen-print mask for hybrid wafer dicing using laser scribing and plasma etch described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits separated by streets involves screen-printing a patterned mask above the semiconductor wafer, the patterned mask covering the integrated circuits and exposing the streets of the semiconductor wafer. The method also involves laser ablating the streets with a laser scribing process to expose regions of the semiconductor wafer between the integrated circuits. The method also involves plasma etching the semiconductor wafer through the exposed regions of the semiconductor wafer to singulate the integrated circuits. The patterned mask protects the integrated circuits during the plasma etching.
摘要翻译：使用激光划线和等离子体蚀刻使用用于混合晶片切割的丝网印刷掩模的方法。在一个示例中，对具有由街道分开的多个集成电路进行切割的半导体晶片的方法涉及在半导体晶片之上丝网印刷图案化掩模，该图案化掩模覆盖集成电路并暴露半导体晶片的街道。该方法还涉及通过激光划线工艺激光烧蚀街道，以暴露集成电路之间的半导体晶片的区域。该方法还包括通过半导体晶片的暴露区域等离子体蚀刻半导体晶片以对集成电路进行分离。图案化掩模在等离子体蚀刻期间保护集成电路。

12. 发明授权

US08927393B1 Water soluble mask formation by dry film vacuum lamination for laser and plasma dicing 有权
标题翻译：通过用于激光和等离子体切割的干膜真空层压形成水溶性掩模
公开(公告)号：US08927393B1
公开(公告)日：2015-01-06
申请号：US14167548
申请日：2014-01-29
申请人： Wei-Sheng Lei , James S. Papanu , Prabhat Kumar , Brad Eaton , Ajay Kumar
发明人： Wei-Sheng Lei , James S. Papanu , Prabhat Kumar , Brad Eaton , Ajay Kumar
IPC分类号： H01L21/3065 , H01L21/82 , H01L21/67
CPC分类号： H01L21/82 , H01L21/30604 , H01L21/561 , H01L21/67207 , H01L21/6836 , H01L24/16 , H01L24/27 , H01L24/32 , H01L24/743 , H01L2224/16145 , H01L2224/27001 , H01L2224/27436 , H01L2224/32145 , H01L2224/73104 , H01L2224/83191 , H01L2924/12042 , H01L2924/00
摘要： Methods and systems for dicing a semiconductor wafer including a plurality of integrated circuits (ICs) are described. In one embodiment, a method involves adhering an adhesive tape to a thin water soluble dry film. The method involves applying the thin water soluble dry film adhered to the adhesive tape over a surface of the semiconductor wafer. The method involves removing the adhesive tape from the thin water soluble dry film. The thin water soluble dry film is patterned with a laser scribing process, exposing regions of the semiconductor wafer between the ICs. The method involves etching the semiconductor wafer through gaps in the patterned thin water soluble dry film, and removing the thin water soluble dry film.
摘要翻译：描述了用于切割包括多个集成电路（IC）的半导体晶片的方法和系统。在一个实施方案中，一种方法包括将粘合带粘附到薄水溶性干膜上。该方法包括将粘附到粘合带上的薄水溶性干膜涂覆在半导体晶片的表面上。该方法包括从薄水溶性干膜中去除粘合带。用激光刻划工艺对薄水溶性干膜进行图案化，使IC之间的半导体晶片的区域暴露。该方法包括通过图案化的薄水溶性干膜中的间隙蚀刻半导体晶片，以及去除薄水溶性干膜。

13. 发明授权

US09443765B2 Water soluble mask formation by dry film vacuum lamination for laser and plasma dicing 有权
公开(公告)号：US09443765B2
公开(公告)日：2016-09-13
申请号：US14590910
申请日：2015-01-06
申请人： Wei-Sheng Lei , James S. Papanu , Prabhat Kumar , Brad Eaton , Ajay Kumar
发明人： Wei-Sheng Lei , James S. Papanu , Prabhat Kumar , Brad Eaton , Ajay Kumar
IPC分类号： H01L21/78 , H01L21/82 , H01L21/67 , H01L21/306 , H01L21/56 , H01L21/683 , H01L23/00
CPC分类号： H01L21/82 , H01L21/30604 , H01L21/561 , H01L21/67207 , H01L21/6836 , H01L24/16 , H01L24/27 , H01L24/32 , H01L24/743 , H01L2224/16145 , H01L2224/27001 , H01L2224/27436 , H01L2224/32145 , H01L2224/73104 , H01L2224/83191 , H01L2924/12042 , H01L2924/00
摘要： Methods and systems for dicing a semiconductor wafer including a plurality of integrated circuits (ICs) are described. In one embodiment, a method involves adhering an adhesive tape to a thin water soluble dry film. The method involves applying the thin water soluble dry film adhered to the adhesive tape over a surface of the semiconductor wafer. The method involves removing the adhesive tape from the thin water soluble dry film. The thin water soluble dry film is patterned with a laser scribing process, exposing regions of the semiconductor wafer between the ICs. The method involves etching the semiconductor wafer through gaps in the patterned thin water soluble dry film, and removing the thin water soluble dry film.

14. 发明授权

US09112050B1 Dicing tape thermal management by wafer frame support ring cooling during plasma dicing 有权
标题翻译：切割胶带通过晶片框架进行热管理，支持等离子体切割期间的环形冷却
公开(公告)号：US09112050B1
公开(公告)日：2015-08-18
申请号：US14276683
申请日：2014-05-13
申请人： Wei-Sheng Lei , Prabhat Kumar , Brad Eaton , Ajay Kumar
发明人： Wei-Sheng Lei , Prabhat Kumar , Brad Eaton , Ajay Kumar
IPC分类号： H01L21/00 , H01L21/82 , H01L21/3065 , H01L21/67 , H01L21/78
CPC分类号： H01L21/82 , H01L21/3065 , H01L21/67 , H01L21/67069 , H01L21/67092 , H01L21/67109 , H01L21/67207 , H01L21/78
摘要： Methods of and apparatuses for dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves introducing a substrate supported by a substrate carrier into a plasma etch chamber. The substrate has a patterned mask thereon covering integrated circuits and exposing streets of the substrate. The substrate carrier has a backside. The method also involves supporting at least a portion of the backside of the substrate carrier on a chuck of the plasma etch chamber. The method also involves cooling substantially all of the backside of the substrate carrier, the cooling involving cooling at least a first portion of the backside of the substrate carrier by the chuck. The method also involves plasma etching the substrate through the streets to singulate the integrated circuits while performing the cooling substantially all of the backside of the substrate carrier.
摘要翻译：对具有多个集成电路的各晶片的切割半导体晶片的方法和装置进行说明。在一个实例中，对具有多个集成电路的半导体晶片进行切割的方法包括将由衬底载体支撑的衬底引入等离子体蚀刻室。衬底上具有图案化掩模，其覆盖集成电路并暴露衬底的街道。衬底载体具有背面。该方法还涉及将衬底载体的背侧的至少一部分支撑在等离子体蚀刻室的卡盘上。该方法还包括冷却基板载体的基本上所有背面，冷却涉及通过卡盘冷却基板载体的背面的至少第一部分。该方法还涉及通过街道等离子体蚀刻衬底以对集成电路进行单片化，同时基本上全部衬底载体的背面进行冷却。

15. 发明申请

US20150214111A1 WATER SOLUBLE MASK FORMATION BY DRY FILM VACUUM LAMINATION FOR LASER AND PLASMA DICING 审中-公开
标题翻译：水溶性膜由干膜真空层压制成，用于激光和等离子体处理
公开(公告)号：US20150214111A1
公开(公告)日：2015-07-30
申请号：US14590910
申请日：2015-01-06
申请人： Wei-Sheng Lei , James S. Papanu , Prabhat Kumar , Brad Eaton , Ajay Kumar
发明人： Wei-Sheng Lei , James S. Papanu , Prabhat Kumar , Brad Eaton , Ajay Kumar
IPC分类号： H01L21/82 , H01L21/683 , H01L21/306 , H01L21/56
CPC分类号： H01L21/82 , H01L21/30604 , H01L21/561 , H01L21/67207 , H01L21/6836 , H01L24/16 , H01L24/27 , H01L24/32 , H01L24/743 , H01L2224/16145 , H01L2224/27001 , H01L2224/27436 , H01L2224/32145 , H01L2224/73104 , H01L2224/83191 , H01L2924/12042 , H01L2924/00
摘要： Methods and systems for dicing a semiconductor wafer including a plurality of integrated circuits (ICs) are described. In one embodiment, a method involves adhering an adhesive tape to a thin water soluble dry film. The method involves applying the thin water soluble dry film adhered to the adhesive tape over a surface of the semiconductor wafer. The method involves removing the adhesive tape from the thin water soluble dry film. The thin water soluble dry film is patterned with a laser scribing process, exposing regions of the semiconductor wafer between the ICs. The method involves etching the semiconductor wafer through gaps in the patterned thin water soluble dry film, and removing the thin water soluble dry film.
摘要翻译：描述了用于切割包括多个集成电路（IC）的半导体晶片的方法和系统。在一个实施方案中，一种方法包括将粘合带粘附到薄水溶性干膜上。该方法包括将粘附到粘合带上的薄水溶性干膜涂覆在半导体晶片的表面上。该方法包括从薄水溶性干膜中去除粘合带。用激光刻划工艺对薄水溶性干膜进行图案化，使IC之间的半导体晶片的区域暴露。该方法包括通过图案化的薄水溶性干膜中的间隙蚀刻半导体晶片，以及去除薄水溶性干膜。

16. 发明授权

US09926623B2 Methods of forming molybdenum sputtering targets 有权
公开(公告)号：US09926623B2
公开(公告)日：2018-03-27
申请号：US15061566
申请日：2016-03-04
申请人： Brad Lemon , Joseph Hirt , Timothy Welling , James G. Daily, III , David Meendering , Gary Rozak , Jerome O'Grady , Prabhat Kumar , Steven A. Miller , Rong-chein Richard Wu , David G. Schwartz
发明人： Brad Lemon , Joseph Hirt , Timothy Welling , James G. Daily, III , David Meendering , Gary Rozak , Jerome O'Grady , Prabhat Kumar , Steven A. Miller , Rong-chein Richard Wu , David G. Schwartz
IPC分类号： C23C14/34 , B22F3/16 , C22C1/04 , C22C27/04 , C23C14/35 , C23C14/46 , B22F1/00 , B22F5/00 , C21D8/02 , C22F1/18 , C23C14/14 , B22F3/24
CPC分类号： C23C14/3414 , B22F1/0003 , B22F3/16 , B22F3/162 , B22F3/24 , B22F5/006 , B22F2003/248 , B22F2301/20 , B22F2998/00 , B22F2998/10 , C21D8/0221 , C21D8/0247 , C22C1/045 , C22C27/04 , C22F1/18 , C23C14/14 , C23C14/3478 , C23C14/3485 , C23C14/35 , C23C14/46 , B22F3/172 , B22F3/20 , B22F3/04 , B22F3/10
摘要： In various embodiments, sputtering targets are formed by introducing molybdenum powder into a sheet bar mold, pressing the powder to form a sheet bar, sintering the sheet bar to form an ingot having a density of at least 90% of a theoretical density, preheating the ingot, rolling the ingot to form a plate, and heat treating the plate.

17. 发明授权

US08784729B2 High density refractory metals and alloys sputtering targets 有权
$High density refractory metals and alloys sputtering targets$
标题翻译：高密度难熔金属和合金溅射靶
公开(公告)号：US08784729B2
公开(公告)日：2014-07-22
申请号：US11653816
申请日：2007-01-16
申请人： Prabhat Kumar , Charles Wood , Gary Rozak , Steven A. Miller , Glen Zeman , Rong-Chein Richard Wu
发明人： Prabhat Kumar , Charles Wood , Gary Rozak , Steven A. Miller , Glen Zeman , Rong-Chein Richard Wu
IPC分类号： B22F1/00 , B22F1/02
CPC分类号： C23C14/3414 , B22F3/1017 , B22F2003/241 , B22F2003/247 , B22F2998/10 , C22C1/045 , B22F3/04 , B22F3/24
摘要： The present invention is directed to a process for producing high density, refractory metal products via a press/sintering process. The invention is also directed to a process for producing a sputtering target and to the sputtering target so produced.
摘要翻译：本发明涉及一种通过压制/烧结方法生产高密度难熔金属产品的方法。本发明还涉及一种用于制造溅射靶和如此制造的溅射靶的方法。

18. 发明申请

US20130224059A1 METHODS OF FORMING MOLYBDENUM SPUTTERING TARGETS 有权
标题翻译：形成莫氏体溅射目标的方法
公开(公告)号：US20130224059A1
公开(公告)日：2013-08-29
申请号：US13849918
申请日：2013-03-25
申请人： Brad Lemon , Joseph Hirt , Timothy Welling , James G. Daily, III , David Meendering , Gary Rozak , Jerome O'Grady , Peter R. Jepson , Prabhat Kumar , Steven A. Miller , Rong-chein Richard Wu , David G. Schwarz
发明人： Brad Lemon , Joseph Hirt , Timothy Welling , James G. Daily, III , David Meendering , Gary Rozak , Jerome O'Grady , Peter R. Jepson , Prabhat Kumar , Steven A. Miller , Rong-chein Richard Wu , David G. Schwarz
IPC分类号： C23C14/34
CPC分类号： C23C14/3414 , B22F1/0003 , B22F3/16 , B22F3/162 , B22F3/24 , B22F5/006 , B22F2003/248 , B22F2301/20 , B22F2998/00 , B22F2998/10 , C21D8/0221 , C21D8/0247 , C22C1/045 , C22C27/04 , C22F1/18 , C23C14/14 , C23C14/3478 , C23C14/3485 , C23C14/35 , C23C14/46 , B22F3/172 , B22F3/20 , B22F3/04 , B22F3/10
摘要： In various embodiments, planar sputtering targets are produced by forming a billet at least by pressing molybdenum powder in a mold and sintering the pressed powder, working the billet to form a worked billet, heat treating the worked billet, working the worked billet to form a final billet, and heat treating the final billet.
摘要翻译：在各种实施例中，平面溅射靶通过至少通过在模具中压制钼粉末并烧结压粉，加工坯料以形成加工的坯料，热处理加工的坯料，加工加工的坯料以形成最终坯料，并对最终坯料进行热处理。

19. 发明授权

US08197894B2 Methods of forming sputtering targets 有权
标题翻译：形成溅射靶的方法
公开(公告)号：US08197894B2
公开(公告)日：2012-06-12
申请号：US11937164
申请日：2007-11-08
申请人： Steven A. Miller , Olaf Schmidt-Park , Prabhat Kumar , Richard Wu , Shuwei Sun , Stefan Zimmermann
发明人： Steven A. Miller , Olaf Schmidt-Park , Prabhat Kumar , Richard Wu , Shuwei Sun , Stefan Zimmermann
IPC分类号： B05D1/12
CPC分类号： C23C14/3414 , B22F1/0014 , C22C1/045 , C23C4/134 , C23C14/0057 , C23C14/0089 , C23C14/0641 , C23C14/08 , C23C14/14 , C23C24/04 , H01J37/3426 , H01J2237/332
摘要： In various embodiments, sputter-target formation includes application of a layer having an intermediate coefficient of thermal expansion between the backing plate and the target material.
摘要翻译：在各种实施例中，溅射靶的形成包括在背板和目标材料之间施加具有中间热膨胀系数的层。

20. 发明授权

US08088232B2 Molybdenum tubular sputtering targets with uniform grain size and texture 有权
标题翻译：具有均匀粒度和质地的钼管式溅射靶
公开(公告)号：US08088232B2
公开(公告)日：2012-01-03
申请号：US11574469
申请日：2005-08-29
申请人： Brad Lemon , Joseph Hirt , Timothy Welling , James G. Daily, III , David Meendering , Gary Rozak , Jerome O'Grady , Peter R. Jepson , Prabhat Kumar , Steven A. Miller , Richard Wu , Davd G. Schwarz
发明人： Brad Lemon , Joseph Hirt , Timothy Welling , James G. Daily, III , David Meendering , Gary Rozak , Jerome O'Grady , Peter R. Jepson , Prabhat Kumar , Steven A. Miller , Richard Wu , Davd G. Schwarz
IPC分类号： C22C27/04 , C25B9/00 , C23C14/00 , B22F3/24 , B32B9/00
CPC分类号： C22C1/045 , B22F3/162 , B22F2003/248 , B22F2998/00 , B22F2998/10 , C22C27/04 , C23C14/3414 , B22F3/172 , B22F3/20 , B22F3/04 , B22F3/10 , B22F3/16 , B22F3/24
摘要： Molybdenum, sputtering targets and sintering characterized as having no or minimal texture banding or through thickness gradient. The molybdenum sputtering targets having a fine, uniform grain size as well as uniform texture, are high purity and can be micro-alloyed to improved performance. The sputtering targets can be round discs, square, rectangular or tubular and can be sputtered to form thin films on substrates. By using a segment-forming method, the size of the sputtering target can be up to 6 m×5.5 m. The thin films can be used in electronic components such as Thin Film Transistor-Liquid Crystal Displays, Plasma Display Panels, Organic Light Emitting Diodes, Inorganic Light Emitting Diode Displays, Field Emitting Displays, solar cells, sensors, semiconductor devices, and gate device for CMOS (complementary metal oxide semiconductor) with tunable work functions.
摘要翻译：钼，溅射靶和烧结表征为没有或最小纹理条纹或通过厚度梯度。具有精细，均匀的晶粒尺寸以及均匀织构的钼溅射靶是高纯度的，并且可以微合金化以改善性能。溅射靶可以是圆盘，正方形，矩形或管状，并且可以溅射以在基底上形成薄膜。通过使用段形成方法，溅射靶的尺寸可以达到6m×5.5μm。薄膜可以用于薄膜晶体管 - 液晶显示器，等离子体显示面板，有机发光二极管，无机发光二极管显示器，场发射显示器，太阳能电池，传感器，半导体器件和门装置等电子部件中 CMOS（互补金属氧化物半导体）具有可调功能。

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