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1. 发明授权

US08088232B2 Molybdenum tubular sputtering targets with uniform grain size and texture 有权
标题翻译：具有均匀粒度和质地的钼管式溅射靶
公开(公告)号：US08088232B2
公开(公告)日：2012-01-03
申请号：US11574469
申请日：2005-08-29
申请人： Brad Lemon , Joseph Hirt , Timothy Welling , James G. Daily, III , David Meendering , Gary Rozak , Jerome O'Grady , Peter R. Jepson , Prabhat Kumar , Steven A. Miller , Richard Wu , Davd G. Schwarz
发明人： Brad Lemon , Joseph Hirt , Timothy Welling , James G. Daily, III , David Meendering , Gary Rozak , Jerome O'Grady , Peter R. Jepson , Prabhat Kumar , Steven A. Miller , Richard Wu , Davd G. Schwarz
IPC分类号： C22C27/04 , C25B9/00 , C23C14/00 , B22F3/24 , B32B9/00
CPC分类号： C22C1/045 , B22F3/162 , B22F2003/248 , B22F2998/00 , B22F2998/10 , C22C27/04 , C23C14/3414 , B22F3/172 , B22F3/20 , B22F3/04 , B22F3/10 , B22F3/16 , B22F3/24
摘要： Molybdenum, sputtering targets and sintering characterized as having no or minimal texture banding or through thickness gradient. The molybdenum sputtering targets having a fine, uniform grain size as well as uniform texture, are high purity and can be micro-alloyed to improved performance. The sputtering targets can be round discs, square, rectangular or tubular and can be sputtered to form thin films on substrates. By using a segment-forming method, the size of the sputtering target can be up to 6 m×5.5 m. The thin films can be used in electronic components such as Thin Film Transistor-Liquid Crystal Displays, Plasma Display Panels, Organic Light Emitting Diodes, Inorganic Light Emitting Diode Displays, Field Emitting Displays, solar cells, sensors, semiconductor devices, and gate device for CMOS (complementary metal oxide semiconductor) with tunable work functions.
摘要翻译：钼，溅射靶和烧结表征为没有或最小纹理条纹或通过厚度梯度。具有精细，均匀的晶粒尺寸以及均匀织构的钼溅射靶是高纯度的，并且可以微合金化以改善性能。溅射靶可以是圆盘，正方形，矩形或管状，并且可以溅射以在基底上形成薄膜。通过使用段形成方法，溅射靶的尺寸可以达到6m×5.5μm。薄膜可以用于薄膜晶体管 - 液晶显示器，等离子体显示面板，有机发光二极管，无机发光二极管显示器，场发射显示器，太阳能电池，传感器，半导体器件和门装置等电子部件中 CMOS（互补金属氧化物半导体）具有可调功能。

2. 发明申请

US20080193798A1 Molybdenum Tubular Sputtering Targets with Uniform Grain Size and Texture 有权
标题翻译：具有均匀粒度和纹理的钼管状溅射靶
公开(公告)号：US20080193798A1
公开(公告)日：2008-08-14
申请号：US11574469
申请日：2005-08-29
申请人： Brad Lemon , Joseph Hirt , Timothy Welling , James G. Daily , David Meendering , Gary Rozak , Jerome O'Grady , Peter R. Jepson , Prabhat Kumar , Steven A. Miller , Richard Wu , Davd G. Schwarz
发明人： Brad Lemon , Joseph Hirt , Timothy Welling , James G. Daily , David Meendering , Gary Rozak , Jerome O'Grady , Peter R. Jepson , Prabhat Kumar , Steven A. Miller , Richard Wu , Davd G. Schwarz
IPC分类号： C23C14/34 , B22F3/14 , C22C27/04
CPC分类号： C22C1/045 , B22F3/162 , B22F2003/248 , B22F2998/00 , B22F2998/10 , C22C27/04 , C23C14/3414 , B22F3/172 , B22F3/20 , B22F3/04 , B22F3/10 , B22F3/16 , B22F3/24
摘要： Molybdenum sputtering targets and sintering characterized as having no or minimal texture banding or through thickness gradient. The molybdenum sputtering targets having a fine, uniform grain size as well as uniform texture, are high purity and can be micro-alloyed to improved performance. The sputtering targets can be round discs, square, rectangular or tubular and can be sputtered to form thin films on substrates. By using a segment-forming method, the size of the sputtering target can be up to 6 m×5.5 m. The thin films can be used in electronic components such as Thin Film Transistor—Liquid Crystal Displays, Plasma Display Panels, Organic Light Emitting Diodes, Inorganic Light Emitting Diode Displays, Field Emitting Displays, solar cells, sensors, semiconductor devices, and gate device for CMOS (complementary metal oxide semiconductor) with tunable work functions.
摘要翻译：钼溅射靶和烧结表征为没有或最小纹理条带或通过厚度梯度。具有精细，均匀的晶粒尺寸以及均匀织构的钼溅射靶是高纯度的，并且可以微合金化以改善性能。溅射靶可以是圆盘，正方形，矩形或管状，并且可以溅射以在基底上形成薄膜。通过使用段形成方法，溅射靶的尺寸可以达到6m×5.5μm。薄膜可以用于薄膜晶体管 - 液晶显示器，等离子体显示面板，有机发光二极管，无机发光二极管显示器，场发射显示器，太阳能电池，传感器，半导体器件和门装置等电子部件中 CMOS（互补金属氧化物半导体）具有可调功能。

3. 发明申请

US20130224059A1 METHODS OF FORMING MOLYBDENUM SPUTTERING TARGETS 有权
标题翻译：形成莫氏体溅射目标的方法
公开(公告)号：US20130224059A1
公开(公告)日：2013-08-29
申请号：US13849918
申请日：2013-03-25
申请人： Brad Lemon , Joseph Hirt , Timothy Welling , James G. Daily, III , David Meendering , Gary Rozak , Jerome O'Grady , Peter R. Jepson , Prabhat Kumar , Steven A. Miller , Rong-chein Richard Wu , David G. Schwarz
发明人： Brad Lemon , Joseph Hirt , Timothy Welling , James G. Daily, III , David Meendering , Gary Rozak , Jerome O'Grady , Peter R. Jepson , Prabhat Kumar , Steven A. Miller , Rong-chein Richard Wu , David G. Schwarz
IPC分类号： C23C14/34
CPC分类号： C23C14/3414 , B22F1/0003 , B22F3/16 , B22F3/162 , B22F3/24 , B22F5/006 , B22F2003/248 , B22F2301/20 , B22F2998/00 , B22F2998/10 , C21D8/0221 , C21D8/0247 , C22C1/045 , C22C27/04 , C22F1/18 , C23C14/14 , C23C14/3478 , C23C14/3485 , C23C14/35 , C23C14/46 , B22F3/172 , B22F3/20 , B22F3/04 , B22F3/10
摘要： In various embodiments, planar sputtering targets are produced by forming a billet at least by pressing molybdenum powder in a mold and sintering the pressed powder, working the billet to form a worked billet, heat treating the worked billet, working the worked billet to form a final billet, and heat treating the final billet.
摘要翻译：在各种实施例中，平面溅射靶通过至少通过在模具中压制钼粉末并烧结压粉，加工坯料以形成加工的坯料，热处理加工的坯料，加工加工的坯料以形成最终坯料，并对最终坯料进行热处理。

4. 发明授权

US08425833B2 Methods of forming molybdenum sputtering targets 有权
标题翻译：形成钼溅射靶的方法
公开(公告)号：US08425833B2
公开(公告)日：2013-04-23
申请号：US13340973
申请日：2011-12-30
申请人： Brad Lemon , Joseph Hirt , Timothy Welling , James G. Daily, III , David Meendering , Gary Rozak , Jerome O'Grady , Peter R. Jepson , Prabhat Kumar , Steven A. Miller , Richard Wu , David G. Schwarz
发明人： Brad Lemon , Joseph Hirt , Timothy Welling , James G. Daily, III , David Meendering , Gary Rozak , Jerome O'Grady , Peter R. Jepson , Prabhat Kumar , Steven A. Miller , Richard Wu , David G. Schwarz
IPC分类号： B22F3/12 , B22F3/24 , B22F3/20 , C22C27/04
CPC分类号： C23C14/3414 , B22F1/0003 , B22F3/16 , B22F3/162 , B22F3/24 , B22F5/006 , B22F2003/248 , B22F2301/20 , B22F2998/00 , B22F2998/10 , C21D8/0221 , C21D8/0247 , C22C1/045 , C22C27/04 , C22F1/18 , C23C14/14 , C23C14/3478 , C23C14/3485 , C23C14/35 , C23C14/46 , B22F3/172 , B22F3/20 , B22F3/04 , B22F3/10
摘要： In various embodiments, tubular sputtering targets are produced by forming a tubular billet at least by pressing molybdenum powder in a mold and sintering the pressed molybdenum powder, working the tubular billet to form a worked billet, and heat treating the worked billet.
摘要翻译：在各种实施方案中，管状溅射靶通过至少通过在模具中挤压钼粉末并烧结压制的钼粉末，加工管状坯料以形成加工的坯料并且对加工的坯料进行热处理而形成管状坯料来生产。

5. 发明申请

US20120189483A1 Methods of forming molybdenum sputtering targets 有权
标题翻译：形成钼溅射靶的方法
公开(公告)号：US20120189483A1
公开(公告)日：2012-07-26
申请号：US13340973
申请日：2011-12-30
申请人： Brad Lemon , Joseph Hirt , Timothy Welling , James G. Daily, III , David Meendering , Gary Rozak , Jerome O'Grady , Peter R. Jepson , Prabhat Kumar , Steven A. Miller , Richard Wu , David G. Schwarz
发明人： Brad Lemon , Joseph Hirt , Timothy Welling , James G. Daily, III , David Meendering , Gary Rozak , Jerome O'Grady , Peter R. Jepson , Prabhat Kumar , Steven A. Miller , Richard Wu , David G. Schwarz
IPC分类号： B22F3/12 , B22F3/24 , B22F3/20
CPC分类号： C23C14/3414 , B22F1/0003 , B22F3/16 , B22F3/162 , B22F3/24 , B22F5/006 , B22F2003/248 , B22F2301/20 , B22F2998/00 , B22F2998/10 , C21D8/0221 , C21D8/0247 , C22C1/045 , C22C27/04 , C22F1/18 , C23C14/14 , C23C14/3478 , C23C14/3485 , C23C14/35 , C23C14/46 , B22F3/172 , B22F3/20 , B22F3/04 , B22F3/10
摘要： In various embodiments, tubular sputtering targets are produced by forming a tubular billet at least by pressing molybdenum powder in a mold and sintering the pressed molybdenum powder, working the tubular billet to form a worked billet, and heat treating the worked billet.
摘要翻译：在各种实施方案中，管状溅射靶通过至少通过在模具中挤压钼粉末并烧结压制的钼粉末，加工管状坯料以形成加工的坯料并且对加工的坯料进行热处理而形成管状坯料来生产。

6. 发明授权

US07794554B2 Rejuvenation of refractory metal products 有权
$Rejuvenation of refractory metal products$
标题翻译：耐火金属制品的复兴
公开(公告)号：US07794554B2
公开(公告)日：2010-09-14
申请号：US11038890
申请日：2005-01-19
申请人： Paul R. Aimone , Prabhat Kumar , Peter R. Jepson , Henning Uhlenhut , Howard V. Goldberg , Steven A. Miller
发明人： Paul R. Aimone , Prabhat Kumar , Peter R. Jepson , Henning Uhlenhut , Howard V. Goldberg , Steven A. Miller
IPC分类号： C21D5/00
CPC分类号： H01J37/3491 , B22F7/062 , B22F2007/068 , B22F2999/00 , C23C14/3414 , Y02P10/295 , B22F3/1055
摘要： Refractory metal products, such as tantalum, can be rejuvenated after metal consumption in selected zones by filling the zones with powder and simultaneously applying focused radiant energy to the powder.
摘要翻译：耐火金属制品，如钽，可以在选定区域的金属消耗后通过用粉末填充区域并同时向粉末施加聚焦的辐射能来恢复活力。

7. 发明授权

US07651658B2 Refractory metal and alloy refining by laser forming and melting 有权
$Refractory metal and alloy refining by laser forming and melting$
标题翻译：耐火金属和合金精炼通过激光成形和熔化
公开(公告)号：US07651658B2
公开(公告)日：2010-01-26
申请号：US10501837
申请日：2003-01-22
申请人： Paul R. Aimone , Prabhat Kumar , Peter R. Jepson
发明人： Paul R. Aimone , Prabhat Kumar , Peter R. Jepson
IPC分类号： B22F5/00 , B23K26/32
CPC分类号： B22F5/00 , C23C14/3414 , C23C24/10
摘要： A process to chemically refine and consolidate tantalum, niobium and their alloys to a fabricated product of net shape or near-net shape with higher throughput, more consistency, and lower manufacturing costs compared to prior art routes or rejuvenate damaged and deteriorated refractory metal parts. Powder metal is loaded into hoppers to be fed into laser forming/melting equipment. A suitable substrate is loaded into a laser forming/melting chamber onto which the powder will be deposited and consolidated in a point-scan process. As the powder is fed onto successive points of the surface of the substrate in linear traces, the laser is used to heat and partially melt the substrate and completely melt the powder. A combined deposition and melt beam traces the substrate surface repeatedly over a selected area to build up a dense coating of controlled microstructure in multiple layers. A fully dense deposit is built up that becomes the desired shape.
摘要翻译：与现有技术路线相比，将钽，铌及其合金化学改善和固结成网状或近净形状的制造产品，具有更高的生产能力，更高的一致性和更低的制造成本，或者使受损和劣化的难熔金属部件恢复活力。将粉末金属装入料斗中以供入激光成形/熔化设备。合适的基底被加载到激光成形/熔化室中，粉末将在其中沉积并在点扫描过程中固结到其上。当粉末以线性迹线供给到基底表面的连续点时，激光用于加热和部分熔化基底并完全熔化粉末。组合的沉积和熔体束在选择的区域上重复地跟踪衬底表面，以在多层中建立受控微结构的致密涂层。建立了一个完全致密的沉积物，成为所需的形状。

8. 发明授权

US08499606B2 Refractory metal pots 有权
$Refractory metal pots$
标题翻译：耐火金属锅
公开(公告)号：US08499606B2
公开(公告)日：2013-08-06
申请号：US13301066
申请日：2011-11-21
申请人： Peter R. Jepson
发明人： Peter R. Jepson
IPC分类号： B21D22/00
CPC分类号： C22F1/18 , B21J1/025 , B21J5/00 , B21K21/02 , C21D8/0205 , C21D9/46 , Y10S72/70 , Y10T29/49826
摘要： In accordance with various embodiments, plates are formed via a plurality of upset-forging and forging-back cycles followed by a plurality of rolling passes.
摘要翻译：根据各种实施例，通过多个锻造和锻造循环，随后进行多次轧制，形成板。

9. 发明申请

US20120117780A1 REFRACTORY METAL POTS 有权
标题翻译： REFRACTORY金属POTS
公开(公告)号：US20120117780A1
公开(公告)日：2012-05-17
申请号：US13301066
申请日：2011-11-21
申请人： Peter R. Jepson
发明人： Peter R. Jepson
IPC分类号： B21B15/00 , B23K28/00 , C21D1/26 , B23P15/00 , B21B3/00
CPC分类号： C22F1/18 , B21J1/025 , B21J5/00 , B21K21/02 , C21D8/0205 , C21D9/46 , Y10S72/70 , Y10T29/49826
摘要： In accordance with various embodiments, plates are formed via a plurality of upset-forging and forging-back cycles followed by a plurality of rolling passes.
摘要翻译：根据各种实施例，通过多个锻造和锻造循环，随后进行多次轧制，形成板。

10. 发明申请

US20090038362A1 Refractory metal plates with improved uniformity of texture 有权
$Refractory metal plates with improved uniformity of texture$
标题翻译：具有改善质地均匀性的耐火金属板
公开(公告)号：US20090038362A1
公开(公告)日：2009-02-12
申请号：US12221646
申请日：2008-08-05
申请人： Peter R. Jepson , Dincer Bozkaya
发明人： Peter R. Jepson , Dincer Bozkaya
IPC分类号： B21B41/02 , B22F5/00 , B32B15/00 , B32B5/14
CPC分类号： H01J37/3426 , B21B1/227 , B21B39/04 , B21B2265/24 , B21B2267/065 , B21B2273/02 , B22F3/18 , C22F1/18 , C23C14/3414 , Y10T428/12 , Y10T428/12014 , Y10T428/12458
摘要： A refractory metal plate is provided. The plate has a center, a thickness, an edge, a top surface and a bottom surface, and has a crystallographic texture (as characterized by through thickness gradient, banding severity; and variation across the plate, for each of the texture components 100//ND and 111//ND, which is substantially uniform throughout the plate.
摘要翻译：提供难熔金属板。板具有中心，厚度，边缘，顶表面和底表面，并且具有晶体学结构（通过厚度梯度，条带严重性以及板上的变化的特征，对于每个纹理组件100 / / ND和111 // ND，其在整个板中基本均匀。

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