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11. 发明授权

US08169754B2 Dedicated noncorrosive smear detector 有权
标题翻译：专用非腐蚀性涂片检测仪
公开(公告)号：US08169754B2
公开(公告)日：2012-05-01
申请号：US12006296
申请日：2007-12-31
申请人： David P. Druist , David J. Seagle , Jila Tabib
发明人： David P. Druist , David J. Seagle , Jila Tabib
IPC分类号： G11B5/33
CPC分类号： G11B5/455 , B82Y10/00 , B82Y25/00 , G11B5/3169 , G11B5/3173 , G11B5/3909 , G11B2005/3996
摘要： A disk drive head slider for a magnetic disk drive is provided. The head slider includes a tunnel magnetic resistance device for reading data on a magnetic disk and a dedicated noncorrosive smear detector for measuring resistance wherein the resistance corresponds to a level of smear associated with the head slider.
摘要翻译：提供了用于磁盘驱动器的磁盘驱动器磁头滑块。磁头滑块包括用于读取磁盘上的数据的隧道磁阻装置和用于测量电阻的专用非腐蚀性涂片检测器，其中电阻对应于与磁头滑块相关联的拖尾水平。

12. 发明申请

US20070246761A1 ELECTRICAL LAPPING GUIDES MADE FROM TUNNELING MAGNETORESISTIVE (TMR) MATERIAL 失效
标题翻译：隧道磁铁（TMR）材料制成的电气导线
公开(公告)号：US20070246761A1
公开(公告)日：2007-10-25
申请号：US11379321
申请日：2006-04-19
申请人： Robert Beach , Daniele Mauri , David Seagle , Jila Tabib
发明人： Robert Beach , Daniele Mauri , David Seagle , Jila Tabib
IPC分类号： H01L29/94
CPC分类号： G11B5/3173 , B82Y10/00 , B82Y25/00 , G11B5/3169 , G11B5/3906 , G11B5/3909 , H01L43/12
摘要： Tunneling magnetoresistive (TMR) electrical lapping guides (ELG) are disclosed for use in wafer fabrication of magnetic sensing devices, such as magnetic recording heads using TMR read elements. A TMR ELG includes a TMR stack comprising a first conductive layer, a barrier layer, and a second conductive layer of TMR material. The TMR ELG also includes a first lead and a second lead that connect to conductive pads used for applying a sense current to the TMR ELG in a current in plane (CIP) fashion. The first lead contacts one side of the TMR stack so that the first lead contacts both the first conductive layer and the second conductive layer of the TMR stack. The second lead contacts the other side of the TMR stack so that the second lead contacts both the first conductive layer and the second conductive layer of the TMR stack.
摘要翻译：公开了隧道磁阻（TMR）电研磨引导件（ELG），用于磁感测装置的晶片制造，例如使用TMR读取元件的磁记录头。 TMR ELG包括TMR堆叠，其包括第一导电层，阻挡层和TMR材料的第二导电层。 TMR ELG还包括连接到用于以当前平面（CIP）方式向TMR ELG施加感测电流的导电焊盘的第一引线和第二引线。第一引线接触TMR堆叠的一侧，使得第一引线接触TMR堆叠的第一导电层和第二导电层。第二引线接触TMR堆叠的另一侧，使得第二引线接触TMR堆叠的第一导电层和第二导电层。

13. 发明申请

US20060146450A1 System, method, and apparatus for providing a temporary, deep shunt on wafer structures for electrostatic discharge protection during processing 有权
标题翻译：用于在晶片结构上提供用于处理期间的静电放电保护的临时的深度分流的系统，方法和装置
公开(公告)号：US20060146450A1
公开(公告)日：2006-07-06
申请号：US11029134
申请日：2005-01-04
申请人： Robert Beach , David Seagle , Jila Tabib
发明人： Robert Beach , David Seagle , Jila Tabib
IPC分类号： H04R31/00 , G11B5/127 , G11B5/33 , B44C1/22 , B24B1/00
CPC分类号： G11B5/11 , G11B5/3163 , G11B5/3903 , G11B5/40 , G11B5/455 , Y10T29/49032 , Y10T29/49041 , Y10T29/49046 , Y10T29/49156
摘要： A wafer-level shunt is incorporated into a sensor design. The sensor is formed with two shields. When the ABS is etched into the slider, this region of the ABS is recessed to form a deep etch region. A top of the shunt is centered in this region and a bottom of the shunt is located therebelow. The two shields form the sensor leads and are electrically connected to the shunt. The shunt is fabricated by depositing and plating a shield one seed layer, and plating a shield one bar for the shunt. A protection layer protects the seed between shield one and the shield one shunt material. Some of the material is deposited, milled, and refilled with insulation. The unmilled material remains as the sensor and the deep etch shunt. Shield two is deposited and connects to the top of the deep etch shunt. A metallic lead connection is located between the two shields to short the shield two shunt material to shield two of the sensor.
摘要翻译：晶片级分流器并入传感器设计中。传感器由两个屏蔽构成。当ABS被滑入滑块时，ABS的该区域被凹入以形成深刻蚀区域。分流器的顶部位于该区域的中心，并且分流器的底部位于其下方。两个屏蔽件形成传感器引线并且电连接到分流器。分流是通过沉积和镀覆屏蔽一个种子层而制成的，并且将屏蔽电镀一个条以用于分路。保护层保护屏蔽层与屏蔽层之间的种子分离材料。一些材料被沉积，研磨并用绝缘材料重新填充。未磨损的材料保持为传感器和深刻蚀分流。屏蔽二被沉积并连接到深蚀刻分流器的顶部。金属引线连接位于两个屏蔽之间，以将屏蔽两个分流材料短路以屏蔽两个传感器。

14. 发明申请

US20060096081A1 Methods of making magnetic write heads with use of a resist channel shrinking solution having corrosion inhibitors 审中-公开
标题翻译：使用具有腐蚀抑制剂的抗蚀剂通道收缩溶液制造磁性写入头的方法
公开(公告)号：US20060096081A1
公开(公告)日：2006-05-11
申请号：US11312064
申请日：2005-12-19
申请人： Christian Bonhote , Jila Tabib , Dennis McKean , Daniel Bedell , Jyh-Shuey Lo , Hieu Lam , Kim Lee
发明人： Christian Bonhote , Jila Tabib , Dennis McKean , Daniel Bedell , Jyh-Shuey Lo , Hieu Lam , Kim Lee
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/3116 , G11B5/3163 , Y10T29/49032 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T29/49048 , Y10T29/49052
摘要： One preferred method for use in making a magnetic write head with use of the resist channel shrinking solution includes the steps of forming a first pole piece layer of a first pole piece; forming a gap layer over the first pole piece layer; forming a patterned resist over the first pole piece layer and the gap layer; electroplating a first pedestal portion of a second pole piece over the gap layer within a channel of the patterned resist; forming an oxide layer over the first pedestal portion; applying the resist channel shrinking solution comprising the resist channel shrinking film and the corrosion inhibitors over the patterned resist; baking the resist channel shrinking solution over the patterned resist to thereby reduce a width of the channel; removing the resist channel shrinking solution; electroplating a second pedestal portion of the second pole piece within the reduced-width channel of the patterned resist; removing the patterned resist; and milling the structure. Advantageously, the oxide layer and the corrosion inhibitors of the resist channel shrinking solution reduce corrosion in the pole piece during the act of baking the resist channel shrinking solution.
摘要翻译：使用抗蚀剂通道收缩溶液制造磁性写入头的一种优选方法包括以下步骤：形成第一极片的第一极片层; 在所述第一极片层上形成间隙层; 在所述第一极片层和所述间隙层上形成图案化的抗蚀剂; 在图案化的抗蚀剂的通道内的间隙层上电镀第二极片的第一基座部分; 在所述第一基座部分上形成氧化物层; 在图案化的抗蚀剂上施加包含抗蚀剂通道收缩膜和腐蚀抑制剂的抗蚀剂通道收缩溶液; 在图案化的抗蚀剂上烘烤抗蚀剂通道收缩溶液，从而减小通道的宽度; 去除抗蚀剂通道收缩溶液; 在所述图案化抗蚀剂的所述减小宽度的通道内电镀所述第二极靴的第二基座部分; 去除图案化的抗蚀剂; 并研磨结构。有利地，抗蚀剂通道收缩溶液的氧化物层和腐蚀抑制剂在烘烤抗蚀剂通道收缩溶液的作用期间减少极片中的腐蚀。

15. 发明授权

US08230582B2 Methods of making magnetic write heads with use of a resist channel shrinking solution having corrosion inhibitors 失效
标题翻译：使用具有腐蚀抑制剂的抗蚀剂通道收缩溶液制造磁性写入头的方法
公开(公告)号：US08230582B2
公开(公告)日：2012-07-31
申请号：US12685455
申请日：2010-01-11
申请人： Christian Rene Bonhote , Jila Tabib , Dennis Richard Mckean , Daniel Wayne Bedell , Jyh-Shuey Lo , Heiu Lam , Kim Y Lee
发明人： Christian Rene Bonhote , Jila Tabib , Dennis Richard Mckean , Daniel Wayne Bedell , Jyh-Shuey Lo , Heiu Lam , Kim Y Lee
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/3116 , G11B5/3163 , Y10T29/49032 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T29/49048 , Y10T29/49052
摘要： One preferred method for use in making a device structure with use of the resist channel shrinking solution includes the steps of forming a first pedestal portion within a channel of a patterned resist; applying a resist channel shrinking solution comprising a resist channel shrinking film and corrosion inhibitors within the channel of the patterned resist; baking the resist channel shrinking solution over the patterned resist to thereby reduce a width of the channel of the patterned resist; removing the resist channel shrinking solution; and forming a second pedestal portion within the reduced-width channel of the patterned resist. Advantageously, the oxide layer and the corrosion inhibitors of the resist channel shrinking solution reduce corrosion in the pedestal during the act of baking the resist channel shrinking solution.
摘要翻译：用于制造使用抗蚀剂通道收缩溶液的器件结构的一种优选方法包括在图案化抗蚀剂的通道内形成第一基座部分的步骤; 在图案化的抗蚀剂的通道内施加包含抗蚀剂通道收缩膜和腐蚀抑制剂的抗蚀剂通道收缩溶液; 在图案化的抗蚀剂上烘烤抗蚀剂通道收缩溶液，从而减小图案化抗蚀剂的通道的宽度; 去除抗蚀剂通道收缩溶液; 以及在所述图案化抗蚀剂的所述减小宽度的通道内形成第二基座部分。有利地，抗蚀剂通道收缩溶液的氧化物层和腐蚀抑制剂在烘烤抗蚀剂通道收缩溶液的作用下降低了基座中的腐蚀。

16. 发明授权

US07564110B2 Electrical lapping guides made from tunneling magnetoresistive (TMR) material 失效
标题翻译：由隧道磁阻（TMR）材料制成的电气研磨导轨
公开(公告)号：US07564110B2
公开(公告)日：2009-07-21
申请号：US11379321
申请日：2006-04-19
申请人： Robert S. Beach , Daniele Mauri , David J. Seagle , Jila Tabib
发明人： Robert S. Beach , Daniele Mauri , David J. Seagle , Jila Tabib
IPC分类号： H01L29/82
CPC分类号： G11B5/3173 , B82Y10/00 , B82Y25/00 , G11B5/3169 , G11B5/3906 , G11B5/3909 , H01L43/12
摘要： Tunneling magnetoresistive (TMR) electrical lapping guides (ELG) are disclosed for use in wafer fabrication of magnetic sensing devices, such as magnetic recording heads using TMR read elements. A TMR ELG includes a TMR stack comprising a first conductive layer, a barrier layer, and a second conductive layer of TMR material. The TMR ELG also includes a first lead and a second lead that connect to conductive pads used for applying a sense current to the TMR ELG in a current in plane (CIP) fashion. The first lead contacts one side of the TMR stack so that the first lead contacts both the first conductive layer and the second conductive layer of the TMR stack. The second lead contacts the other side of the TMR stack so that the second lead contacts both the first conductive layer and the second conductive layer of the TMR stack.
摘要翻译：公开了隧道磁阻（TMR）电研磨引导件（ELG），用于磁感测装置的晶片制造，例如使用TMR读取元件的磁记录头。 TMR ELG包括TMR堆叠，其包括第一导电层，阻挡层和TMR材料的第二导电层。 TMR ELG还包括连接到用于以当前平面（CIP）方式向TMR ELG施加感测电流的导电焊盘的第一引线和第二引线。第一引线接触TMR堆叠的一侧，使得第一引线接触TMR堆叠的第一导电层和第二导电层。第二引线接触TMR堆叠的另一侧，使得第二引线接触TMR堆叠的第一导电层和第二导电层。

17. 发明申请

US20090168268A1 Dedicated noncorrosive smear detector 有权
标题翻译：专用非腐蚀性涂片检测仪
公开(公告)号：US20090168268A1
公开(公告)日：2009-07-02
申请号：US12006296
申请日：2007-12-31
申请人： David P. Druist , David J. Seagle , Jila Tabib
发明人： David P. Druist , David J. Seagle , Jila Tabib
IPC分类号： G11B5/33
CPC分类号： G11B5/455 , B82Y10/00 , B82Y25/00 , G11B5/3169 , G11B5/3173 , G11B5/3909 , G11B2005/3996
摘要： A disk drive head slider for a magnetic disk drive is provided. The head slider includes a tunnel magnetic resistance device for reading data on a magnetic disk and a dedicated noncorrosive smear detector for measuring resistance wherein the resistance corresponds to a level of smear associated with the head slider.
摘要翻译：提供了用于磁盘驱动器的磁盘驱动器磁头滑块。磁头滑块包括用于读取磁盘上的数据的隧道磁阻装置和用于测量电阻的专用非腐蚀性涂片检测器，其中电阻对应于与磁头滑块相关联的拖尾水平。

18. 发明申请

US20080273265A1 Determining smear of a hard disk drive slider 审中-公开
标题翻译：确定硬盘驱动器滑块的拖尾
公开(公告)号：US20080273265A1
公开(公告)日：2008-11-06
申请号：US11800262
申请日：2007-05-03
申请人： Glenn P. Gee , David J. Seagle , Hicham M. Sougrati , Jila Tabib , Xiao Z. Wu
发明人： Glenn P. Gee , David J. Seagle , Hicham M. Sougrati , Jila Tabib , Xiao Z. Wu
IPC分类号： G11B21/02
CPC分类号： G11B5/3166 , G11B5/102 , G11B5/3169
摘要： A disk drive head slider for a magnetic disk drive is provided. The head slider includes a tunnel magnetic resistance device for reading data on a magnetic disk and a dedicated sensor for measuring resistance wherein the resistance corresponds to a level of smear associated with the head slider.
摘要翻译：提供了用于磁盘驱动器的磁盘驱动器磁头滑块。头滑动器包括用于读取磁盘上的数据的隧道磁阻装置和用于测量电阻的专用传感器，其中电阻对应于与磁头滑块相关联的拖尾水平。

19. 发明申请

US20080266719A1 Process methods for noise reduction of TMR magnetic transducer 有权
标题翻译： TMR磁传感器降噪的工艺方法
公开(公告)号：US20080266719A1
公开(公告)日：2008-10-30
申请号：US11799235
申请日：2007-04-30
申请人： Peter M. Dang , Eric W. Flint , Daryl J. Pocker , Yongjian Sun , Jila Tabib , Brian R. York
发明人： Peter M. Dang , Eric W. Flint , Daryl J. Pocker , Yongjian Sun , Jila Tabib , Brian R. York
IPC分类号： G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3163 , G11B5/3906 , Y10T428/1114 , Y10T428/32
摘要： A hard disk drive slider comprises a tunneling magnetoresistance transducer, which comprises an insulator barrier. A nitrogen atom from a nitrogen atmosphere occupies an oxygen atom vacancy within the insulator barrier, such that noise in read data from the tunneling magnetoresistance transducer is reduced.
摘要翻译：硬盘驱动器滑块包括隧道磁阻换能器，其包括绝缘体屏障。来自氮气气氛的氮原子在绝缘体屏障内占据氧原子空位，使得来自隧道磁阻换能器的读取数据中的噪声减小。

20. 发明授权

US06589436B1 Method of adjusting the flatness of a slider using selective plasma etching 失效
标题翻译：使用选择性等离子体蚀刻来调节滑块的平坦度的方法
公开(公告)号：US06589436B1
公开(公告)日：2003-07-08
申请号：US09593990
申请日：2000-06-14
申请人： Jila Tabib , Yiping Hsiao , Richard Hsiao , Richard T. Campbell , Ciaran A. Fox
发明人： Jila Tabib , Yiping Hsiao , Richard Hsiao , Richard T. Campbell , Ciaran A. Fox
IPC分类号： G11B1732
CPC分类号： G11B5/6005 , Y10T29/49041
摘要： Provided is a reactive ion etching (RIE) method for use in altering the flatness of a slider, whereby a slider or row of sliders is placed within a RIE apparatus. The apparatus comprises essentially an electrode within a chamber having an inlet and an outlet. The electrode is controlled by a bias power source. A source power is provided to the chamber to generate the plasma, wherein a gas or gas mixture is first introduced to the chamber and the source power is adjusted to maximize the plasma composition of ions and reactive neutral species. The ions and reactive neutral species are generated from reactive chemical species such as CHF3 and other F-containing species. An inert gas such as Argon may also be present. Typically, TiC within the Al2O3 matrix of the slider substrate surface is etched at a faster rate than other substrate species.
摘要翻译：提供了用于改变滑块的平坦度的反应离子蚀刻（RIE）方法，由此在RIE装置内放置滑块或滑块排。该设备基本上包括具有入口和出口的腔室内的电极。电极由偏压电源控制。将源功率提供给腔室以产生等离子体，其中首先将气体或气体混合物引入腔室，并且调节源功率以最大化离子和反应性中性物质的血浆组成。离子和反应性中性物质由反应性化学物质如CHF3和其他含F物质产生。惰性气体如氩气也可能存在。通常，滑块衬底表面的Al 2 O 3基体内的TiC以比其它衬底物质更快的速度被蚀刻。

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