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    • 20. 发明授权
    • GaAs-based long-wavelength laser incorporating tunnel junction structure
    • 基于GaAs的长波长激光器结合隧道结结构
    • US07016392B2
    • 2006-03-21
    • US10427585
    • 2003-04-30
    • Ashish TandonMichael H. LearyYing-Lan Chang
    • Ashish TandonMichael H. LearyYing-Lan Chang
    • H01S3/08
    • H01S5/3095H01S5/18313H01S5/18358
    • The light-emitting device comprises a substrate, an active region and a tunnel junction structure. The substrate comprises gallium arsenide. The active region comprises an n-type spacing layer and a p-type spacing layer. The tunnel junction structure comprises a p-type tunnel junction layer adjacent the p-type spacing layer, an n-type tunnel junction layer and a tunnel junction between the p-type tunnel junction layer and the n-type tunnel junction layer. The p-type tunnel junction layer comprises a layer of a p-type first semiconductor material that includes gallium and arsenic. The n-type tunnel junction layer comprises a layer of an n-type second semiconductor material that includes indium, gallium and phosphorus. The high dopant concentration attainable in the second semiconductor material reduces the width of the depletion region at the tunnel junction and increases the electrostatic field across the tunnel junction, so that the reverse bias at which tunneling occurs is reduced.
    • 发光器件包括衬底,有源区和隧道结结构。 衬底包括砷化镓。 有源区包括n型间隔层和p型间隔层。 隧道结结构包括邻近p型间隔层的p型隧道结层,p型隧道结层和n型隧道结层之间的n型隧道结层和隧道结。 p型隧道结层包括包含镓和砷的p型第一半导体材料层。 n型隧道结层包括包含铟,镓和磷的n型第二半导体材料层。 在第二半导体材料中可获得的高掺杂浓度降低了隧道结处的耗尽区的宽度,并且增加了穿过隧道结的静电场,从而减少了发生隧穿的反向偏压。