会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 14. 发明申请
    • Buried ridge waveguide laser diode
    • 埋脊波导激光二极管
    • US20070076773A1
    • 2007-04-05
    • US11633739
    • 2006-12-05
    • Su Hwan OhKi KimOh Kee KwonYong Baek
    • Su Hwan OhKi KimOh Kee KwonYong Baek
    • H01S5/00
    • H01S5/2231B82Y20/00H01S5/1039H01S5/2222H01S5/3211H01S5/3213H01S5/34306
    • Provided is a buried ridge waveguide laser diode that has improved temperature characteristics and can reduce optical loss by a leakage current. The buried ridge waveguide laser diode includes: a ridge region that extends vertically with a constant width and is composed of a selective etching layer and a first compound layer formed of a first conductive type material on a portion of the clad layer; and a p-n-p current blocking layer that has a thickness identical to the depth of the ridge region on the clad layer outside the ridge region and includes a second compound layer formed of a second conductive type material opposite to the first conductive type material. At this time, the current blocking layer includes the first compound layer extending on the second compound layer.
    • 提供了具有改善的温度特性并且可以通过漏电流来减少光学损耗的埋脊式波导激光二极管。 掩埋脊波导激光二极管包括:以恒定宽度垂直延伸的脊区域,并且由包层的一部分上的选择性蚀刻层和由第一导电型材料形成的第一复合层构成; 以及p-n-p电流阻挡层,其厚度与脊区域外的包覆层上的脊区域的深度相同,并且包括由与第一导电类型材料相对的第二导电类型材料形成的第二化合物层。 此时,电流阻挡层包括在第二化合物层上延伸的第一化合物层。
    • 17. 发明授权
    • Tunable external cavity laser diode using variable optical deflector
    • 可调谐外腔激光二极管使用可变光学偏转器
    • US07212560B2
    • 2007-05-01
    • US11029784
    • 2004-12-21
    • Kwang Ryong OhOh Kee KwonKang Ho KimJong Hoi KimHyun Soo Kim
    • Kwang Ryong OhOh Kee KwonKang Ho KimJong Hoi KimHyun Soo Kim
    • H01S3/08H01S3/10
    • H01S5/141G02B6/29308G02B6/2931G02B6/29313H01S5/005H01S5/026H01S5/101H01S5/143
    • Provided is a tunable external cavity laser diode using a variable optical deflector wherein the variable optical deflector, in which a refractive index varies according to an electrical signal, is arranged in a triangular shape between a concave diffraction grating and a reflective mirror. Since a resonant frequency is changed using the electrical signal rather than the mechanical movement, the stable operation and continuous high-speed tenability may be enabled. In addition, when the tunable external cavity laser diode according to the present invention is implemented in an InP/InGaAsP/InP slab waveguide, a variable time determined by the carrier lifetime may be reduced to several nanoseconds or less, the miniaturization is enabled, and the manufacturing costs are significantly reduced due to the process simplification. Moreover, when the concave diffraction grating is designed based on a silica (or polymer) based slab waveguide, the fabrication may be performed even by a lithography process having low resolution, thereby enhancing reproducibility and uniformity of the diffraction grating, and accordingly reducing the manufacturing costs.
    • 提供了一种可调谐的外腔激光二极管,其使用可变光学偏转器,其中折射率根据电信号变化的可变光学偏转器在凹面衍射光栅和反射镜之间布置成三角形。 由于使用电信号而不是机械运动来改变谐振频率,因此可以实现稳定的运行和连续的高速可靠性。 此外,当根据本发明的可调谐外腔激光二极管在InP / InGaAsP / InP平板波导中实现时,由载流子寿命确定的可变时间可以减少到几纳秒或更小,可实现小型化,并且 由于过程简化,制造成本显着降低。 此外,当基于基于二氧化硅(或聚合物)的平板波导设计凹面衍射光栅时,即使通过具有低分辨率的光刻工艺也可以进行制造,从而提高衍射光栅的再现性和均匀性,并因此降低制造 费用
    • 18. 发明授权
    • Logic element employing saturable absorber
    • 使用可饱和吸收器的逻辑元件
    • US06822591B2
    • 2004-11-23
    • US10682453
    • 2003-10-08
    • Hyun Soo KimJong Hoi KimEun Deok SimKang Ho KimOh Kee KwonKwang Ryong Oh
    • Hyun Soo KimJong Hoi KimEun Deok SimKang Ho KimOh Kee KwonKwang Ryong Oh
    • H03M100
    • G02F3/00G02F1/3517
    • The present invention relates to all-optical OR and XOR logic elements employing saturable absorbers as optical gates. Saturable absorbers are arranged in paths of the Mach-Zehnder interferometer, respectively. If the total power of an input optical signal and a continuous wave signal is higher than a transparent input power of the saturable absorbers, the input optical signal passes through the saturable absorbers, and then the optical signals through the two paths are combined, so that it is possible to obtain the operational characteristics of the OR and XOR logic elements. According to the present invention, unlike the optical logic element using a cross-phase modulation by a semiconductor optical amplifier, phase difference depending upon the input optical power is not generated between two paths, so that it is possible to alleviate a restriction of an allowable range of the input optical power.
    • 本发明涉及采用可饱和吸收器作为光栅的全光学OR和异或逻辑元件。 可饱和吸收器分别布置在马赫 - 曾德干涉仪的路径上。 如果输入光信号和连续波信号的总功率高于可饱和吸收体的透明输入功率,则输入光信号通过可饱和吸收体,然后将通过两条路径的光信号合并,使得 可以获得OR和XOR逻辑元件的操作特性。根据本发明,与使用半导体光放大器的交叉相位调制的光逻辑元件不同,不产生取决于输入光功率的相位差 在两个路径之间,使得可以减轻对输入光功率的允许范围的限制。
    • 20. 发明授权
    • Buried ridge waveguide laser diode
    • 埋脊波导激光二极管
    • US07551658B2
    • 2009-06-23
    • US11633739
    • 2006-12-05
    • Su Hwan OhKi soo KimOh Kee KwonYong soon Baek
    • Su Hwan OhKi soo KimOh Kee KwonYong soon Baek
    • H01S5/00
    • H01S5/2231B82Y20/00H01S5/1039H01S5/2222H01S5/3211H01S5/3213H01S5/34306
    • Provided is a buried ridge waveguide laser diode that has improved temperature characteristics and can reduce optical loss by a leakage current. The buried ridge waveguide laser diode includes: a ridge region that extends vertically with a constant width and is composed of a selective etching layer and a first compound layer formed of a first conductive type material on a portion of the clad layer; and a p-n-p current blocking layer that has a thickness identical to the depth of the ridge region on the clad layer outside the ridge region and includes a second compound layer formed of a second conductive type material opposite to the first conductive type material. At this time, the current blocking layer includes the first compound layer extending on the second compound layer.
    • 提供了具有改善的温度特性并且可以通过漏电流来减少光学损耗的埋脊式波导激光二极管。 掩埋脊波导激光二极管包括:以恒定宽度垂直延伸的脊区域,并且由包层的一部分上的选择性蚀刻层和由第一导电型材料形成的第一复合层构成; 以及p-n-p电流阻挡层,其厚度与脊区域外的包覆层上的脊区域的深度相同,并且包括由与第一导电类型材料相对的第二导电类型材料形成的第二化合物层。 此时,电流阻挡层包括在第二化合物层上延伸的第一化合物层。