专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明授权

US07102859B2 Thin-film magnetic head with tunnel magnetoresistive effect element electrically connected in parallel with a resistor element 失效
标题翻译：具有与电阻元件并联电连接的隧道磁阻效应元件的薄膜磁头
公开(公告)号：US07102859B2
公开(公告)日：2006-09-05
申请号：US10765159
申请日：2004-01-28
申请人： Kenji Inage , Shunji Saruki , Nozomu Hachisuka
发明人： Kenji Inage , Shunji Saruki , Nozomu Hachisuka
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3903
摘要： A thin-film magnetic head includes a TMR element and a resistor element connected in parallel with the TMR element. A resistance value RTMR of the TMR element itself is RTMR≧240 Ω, a product RA of the resistance value of the TMR element itself and a cross-sectional area of the TMR element is RA≧3 Ω·μm2, and a resistance value RPARA of the resistor element is RPARA≦480Ω.
摘要翻译：薄膜磁头包括与TMR元件并联连接的TMR元件和电阻元件。 TMR元件本身的电阻值R TMR 是TMR元件本身的电阻值的乘积RA和横截面积的TMR元件的电阻值为RA> =3Ω·m 2，电阻元件的电阻值R PARA 为R PARA = 480Omega。

12. 发明授权

US5998993A Method and apparatus for testing magnetic head with spin-valve magnetoresistive element 失效
标题翻译：用自旋阀磁阻元件测试磁头的方法和装置
公开(公告)号：US5998993A
公开(公告)日：1999-12-07
申请号：US35946
申请日：1998-03-06
申请人： Kenji Inage , Nozomu Hachisuka , Masanori Sakai
发明人： Kenji Inage , Nozomu Hachisuka , Masanori Sakai
IPC分类号： G11B5/00 , G11B5/31 , G11B5/39 , G11B5/455 , G01R33/12 , G01N27/72
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/455 , G11B2005/0008 , G11B2005/3996 , G11B5/3189
摘要： A method of testing a magnetic head with a spin-valve MR element which includes at least a pinned layer, a free layer and a non-magnetic layer for magnetically separating the pinned layer and the free layer. The method includes a step of measuring an output voltage of the spin-valve MR element under application of an external alternating magnetic field to the magnetic head in a direction parallel to a magnetization direction of the pinned layer, a step of obtaining a .rho.-H loop characteristics of the spin-valve MR element from the measured output voltage, and a step of judging pinned direction of the spin-valve MR element in accordance with a polarity of an inclination of the obtained .rho.-H loop characteristics.
摘要翻译：一种用自旋阀MR元件测试磁头的方法，该磁头至少包括被钉扎层，自由层和非磁性层，用于磁性分离被钉扎层和自由层。该方法包括在与被钉扎层的磁化方向平行的方向上向磁头施加外部交变磁场的情况下测量自旋阀MR元件的输出电压的步骤，获得rho -H 根据所测量的输出电压，自旋阀MR元件的回路特性，以及根据获得的rho -H回路特性的倾斜极性来判断自旋阀MR元件的钉扎方向的步骤。

13. 发明申请

US20060221511A1 Low-resistance tunnel magnetoresistive effect element, and manufacturing method, testing method and testing apparatus for the element 有权
标题翻译：低电阻隧道磁阻效应元件，以及元件的制造方法，测试方法和测试装置
公开(公告)号：US20060221511A1
公开(公告)日：2006-10-05
申请号：US11387876
申请日：2006-03-24
申请人： Shunji Saruki , Kenji Inage , Tetsuya Kuwashima , Hiroshi Kiyono , Katsumichi Tagami , Kazumasa Fukuda , Masahide Kohno
发明人： Shunji Saruki , Kenji Inage , Tetsuya Kuwashima , Hiroshi Kiyono , Katsumichi Tagami , Kazumasa Fukuda , Masahide Kohno
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/455 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/3903 , G11B5/3909 , H01F10/3254 , H01F41/303 , H01L43/08 , H01L43/12
摘要： A TMR effect element with sufficiently reduced element resistance and restricted popping noise is provided, which comprises a tunnel barrier layer formed primarily of a metal oxide including many electric charge sites. The electric charge sites density n and the mobility μ of electrons trapped due to the electric charge sites satisfy a relationship expressed by: 0
摘要翻译：提供具有充分降低的元件电阻和限制弹出噪声的TMR效应元件，其包括主要由包括许多电荷位点的金属氧化物形成的隧道势垒层。电荷位置密度n和由于电荷位点而陷入的电子的迁移率μ满足由下式表示的关系：0 <（N _{s1 （mu≠0）> / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / 当元件电阻在读取信号期间分别为最小值和最大值时，隧道电子的密度分别为SUP> <0.2，其中N _{s1 和n2s2 < / SUB>是未被捕获的电子的迁移率。}}

14. 发明授权

US07916434B2 Tunnel magnetoresistive effect element with limited electric popping output voltage 有权
标题翻译：隧道磁阻效应元件具有有限的电涌输出电压
公开(公告)号：US07916434B2
公开(公告)日：2011-03-29
申请号：US11387876
申请日：2006-03-24
申请人： Shunji Saruki , Kenji Inage , Tetsuya Kuwashima , Hiroshi Kiyono , Katsumichi Tagami , Kazumasa Fukuda , Masahide Kohno
发明人： Shunji Saruki , Kenji Inage , Tetsuya Kuwashima , Hiroshi Kiyono , Katsumichi Tagami , Kazumasa Fukuda , Masahide Kohno
IPC分类号： G11B5/33
CPC分类号： G11B5/455 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/3903 , G11B5/3909 , H01F10/3254 , H01F41/303 , H01L43/08 , H01L43/12
摘要： A TMR effect element with sufficiently reduced element resistance and restricted popping noise is provided, which comprises a tunnel barrier layer formed primarily of a metal oxide including many electric charge sites. The electric charge sites density n and the mobility μ of electrons trapped due to the electric charge sites satisfy a relationship expressed by: 0
摘要翻译：提供具有充分降低的元件电阻和限制弹出噪声的TMR效应元件，其包括主要由包括许多电荷位点的金属氧化物形成的隧道势垒层。电荷位置密度n和由于电荷位点捕获的电子的迁移率μ满足由下式表示的关系：0 <（ns1-1-ns2-1）-1·（μ0-μ）·（nμ）-1 <0.2，其中ns1和ns2是在读取信号期间元件电阻分别为最小值和最大值时隧道电子的密度，μ0是未被捕获时电子的迁移率。

15. 发明授权

US06972933B1 Head suspension assembly 有权
标题翻译：头悬挂总成
公开(公告)号：US06972933B1
公开(公告)日：2005-12-06
申请号：US09419793
申请日：1999-10-18
申请人： Takeshi Wada , Kenji Inage , Masashi Shiraishi , Haruyuki Morita
发明人： Takeshi Wada , Kenji Inage , Masashi Shiraishi , Haruyuki Morita
IPC分类号： G11B5/39 , G11B5/127
CPC分类号： G11B5/3967
摘要： A head suspension assembly includes a magnetic head slider with at least one thin-film magnetic head element, a support member for supporting the magnetic head slider at a top end portion thereof, a drive circuit electrically connected to the at least one thin-film magnetic head element, and at least two diode elements connected toward one direction in parallel with terminals which are connected across the at least one thin-film magnetic head element. Each of the diode elements has a turn-on voltage higher than the maximum output voltage of the at least one thin-film magnetic head element.
摘要翻译：头悬挂组件包括具有至少一个薄膜磁头元件的磁头滑动器，用于在其顶端部分处支撑磁头滑块的支撑构件，与至少一个薄膜磁性电连接的驱动电路头元件和至少两个二极管元件连接，所述至少两个二极管元件与连接在所述至少一个薄膜磁头元件上的端子平行地朝向一个方向连接。每个二极管元件具有高于至少一个薄膜磁头元件的最大输出电压的导通电压。

16. 发明授权

US07333303B2 Magnetoresistive device supplying sense current thereto dependent upon a relationship existent between the thickness of the fixed layer and its magnetization 有权
标题翻译：根据固定层的厚度与其磁化之间存在的关系，提供感测电流的磁阻器件
公开(公告)号：US07333303B2
公开(公告)日：2008-02-19
申请号：US11023505
申请日：2004-12-29
申请人： Koji Shimazawa , Yoshihiro Tsuchiya , Kenji Inage
发明人： Koji Shimazawa , Yoshihiro Tsuchiya , Kenji Inage
IPC分类号： G11B5/39
CPC分类号： G11B5/3903
摘要： Provided is a magnetoresistive device capable of stably maintaining sufficient output characteristics even under a higher temperature environment while responding to a demand for a higher recording density. The magnetoresistive device comprises an MR film including a fixing layer made of IrMn, an outer pinned layer of which the magnetization direction is fixed in a +Y direction by the fixing layer, and an inner pinned layer of which the magnetization direction is fixed in a −Y direction by the fixing layer, a pair of conductive lead layers and a constant current circuit which flows a sense current in a +X direction so as to generate a current magnetic field toward a −Y direction in the inner pinned layer, and in the magnetoresistive device, a conditional expression (1) is satisfied. Thereby, the magnetization directions of the outer pinned layer and the inner pinned layer can be stabilized, so even under a high temperature environment, the magnetoresistive device can obtain stable output characteristics, and can respond to a demand for a higher recording density.
摘要翻译：提供了一种即使在较高温度环境下也能够稳定地保持足够的输出特性并且响应于更高记录密度的需求的磁阻器件。磁阻器件包括MR膜，其包括由IrMn制成的固定层，通过固定层将磁化方向固定在+ Y方向上的外部钉扎层，以及将磁化方向固定在其中的内部钉扎层 -Y方向，一对导电引线层和恒流电路，其在+ X方向上流过感测电流，以便在内部被钉扎层中朝向-Y方向产生电流磁场，并且在磁阻器件，条件式（1）被满足。由此，外部被钉扎层和内部被钉扎层的磁化方向可以稳定，因此即使在高温环境下，磁阻器件也能够得到稳定的输出特性，能够满足更高记录密度的要求。

17. 发明授权

US6163437A Magnetic head with spin valve effect magnetoresistive element and its manufacturing method 失效
标题翻译：磁头采用自旋阀效应磁阻元件及其制造方法
公开(公告)号：US6163437A
公开(公告)日：2000-12-19
申请号：US44886
申请日：1998-03-20
申请人： Kenji Inage , Toshiaki Maeda , Jun Shouji , Koichi Terunuma , Masanori Sakai
发明人： Kenji Inage , Toshiaki Maeda , Jun Shouji , Koichi Terunuma , Masanori Sakai
IPC分类号： G11B5/31 , G11B5/39 , G11B5/40 , H01F10/00 , H01F10/08 , H01F10/32 , H01L43/08
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3163 , G11B5/3166 , G11B5/3903 , G11B5/3967 , G11B5/40 , G11B2005/3996
摘要： A magnetic head with a spin valve effect MR element and a method of manufacturing the head. A plurality of spin valve effect MR elements on a substrate are formed, a plurality of pairs of lead conductors connected with the respective spin valve effect MR elements on the substrate are formed, and then a plurality of protection circuits of magnetization inversion connected between the respective pairs of lead conductors on the substrate are formed. Each of the protection circuits is constituted so as to turn on when it receives an energy with a level at which the pinned direction inversion in each of the spin valve effect MR elements occurs.
摘要翻译：具有旋转阀效应MR元件的磁头和制造头部的方法。在衬底上形成多个自旋阀效应MR元件，形成多个与各个自旋阀连接的引导导体，在衬底上形成MR元件，然后将多个磁化反转保护电路连接在相应的形成基板上的导体导体对。每个保护电路被构造成当其接收到具有在每个自旋阀效应MR元件中发生销钉方向反转的水平的能量时接通能量。

18. 发明申请

US20060028773A1 Magnetoresistive device, thin film magnetic head, head gimbal assembly, head arm assembly, magnetic disk drive and method of drive magnetoresistive device 有权
标题翻译：磁阻装置，薄膜磁头，头万向架组件，头臂组件，磁盘驱动器及驱动磁阻装置的方法
公开(公告)号：US20060028773A1
公开(公告)日：2006-02-09
申请号：US11023505
申请日：2004-12-29
申请人： Koji Shimazawa , Yoshihiro Tsuchiya , Kenji Inage
发明人： Koji Shimazawa , Yoshihiro Tsuchiya , Kenji Inage
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/3903
摘要： Provided is a magnetoresistive device capable of stably maintaining sufficient output characteristics even under a higher temperature environment while responding to a demand for a higher recording density. The magnetoresistive device comprises an MR film including a fixing layer made of IrMn, an outer pinned layer of which the magnetization direction is fixed in a +Y direction by the fixing layer, and an inner pinned layer of which the magnetization direction is fixed in a −Y direction by the fixing layer, a pair of conductive lead layers and a constant current circuit which flows a sense current in a +X direction so as to generate a current magnetic field toward a −Y direction in the inner pinned layer, and in the magnetoresistive device, a conditional expression (1) is satisfied. Thereby, the magnetization directions of the outer pinned layer and the inner pinned layer can be stabilized, so even under a high temperature environment, the magnetoresistive device can obtain stable output characteristics, and can respond to a demand for a higher recording density.
摘要翻译：提供了一种即使在较高温度环境下也能够稳定地保持足够的输出特性并且响应于更高记录密度的需求的磁阻器件。磁阻器件包括MR膜，其包括由IrMn制成的固定层，通过固定层将磁化方向固定在+ Y方向上的外部钉扎层，以及将磁化方向固定在其中的内部钉扎层 -Y方向，一对导电引线层和恒流电路，其在+ X方向上流过感测电流，以便在内部被钉扎层中朝向-Y方向产生电流磁场，并且在磁阻器件，条件式（1）被满足。由此，外部被钉扎层和内部被钉扎层的磁化方向可以稳定，因此即使在高温环境下，磁阻器件也能够得到稳定的输出特性，能够满足更高记录密度的要求。

19. 发明授权

US06194896B1 Method of controlling magnetic characteristics of magnetoresistive effect element and of magnetic head with the element, magnetic head device with magnetoresistive effect element, and magnetic disk unit with the device 有权
标题翻译：用磁阻效应元件控制磁阻效应元件和磁头的磁特性的方法，具有磁阻效应元件的磁头装置和装置的磁盘装置
公开(公告)号：US06194896B1
公开(公告)日：2001-02-27
申请号：US09291376
申请日：1999-04-14
申请人： Masato Takahashi , Toshiaki Maeda , Kenji Inage
发明人： Masato Takahashi , Toshiaki Maeda , Kenji Inage
IPC分类号： G01R3302
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G11B5/00 , G11B5/3163 , G11B5/3903 , G11B2005/0008 , H01F10/3268 , H01F41/304
摘要： A method of controlling magnetic characteristics of a MR element and a method of controlling magnetic characteristics of a magnetic head with the MR element utilizing exchange coupling magnetization, include a step of supplying discrete rectangular waveform currents or a rectangular waveform current to the MR element so as to generate magnetic field in a desired direction and to generate joule heat, the generated magnetic field and the generated joule heat being applied to the MR element, and a step of controlling a duty ratio of the discrete rectangular waveform currents or a time constant of the falling of the rectangular waveform current so that a temperature of the MR element is controlled under a desired temperature change characteristics, whereby a magnetization direction caused by the exchange coupling in the MR element is aligned to a desired direction.
摘要翻译：控制MR元件的磁特性的方法和利用MR元件利用交换耦合磁化来控制磁头的磁特性的方法包括向MR元件提供离散矩形波形电流或矩形波形电流的步骤，以便在期望的方向上产生磁场并产生焦耳热，所产生的磁场和产生的焦耳热被施加到MR元件，以及控制离散矩形波形电流的占空比或者矩形波形电流的下降使得MR元件的温度被控制在期望的温度变化特性下，由此由MR元件中的交换耦合引起的磁化方向与期望的方向对准。

20. 发明授权

US07283328B2 Thin-film magnetic head, head gimbal assembly with thin-film magnetic head, magnetic disk drive apparatus with head gimbal assembly, method for designing thin-film magnetic head and manufacturing method of thin-film magnetic head 有权
标题翻译：薄膜磁头，具有薄膜磁头的头万向架组件，具有头万向节组件的磁盘驱动装置，薄膜磁头的设计方法和薄膜磁头的制造方法
公开(公告)号：US07283328B2
公开(公告)日：2007-10-16
申请号：US11113973
申请日：2005-04-26
申请人： Norikazu Ota , Kenji Inage , Taro Oike
发明人： Norikazu Ota , Kenji Inage , Taro Oike
IPC分类号： G11B21/02 , G11B5/56 , G11B5/10
CPC分类号： G11B5/3136 , G11B5/314 , G11B5/4826 , G11B5/6064
摘要： A thin-film magnetic head includes at least one inductive write head element and at least one read magnetic head element, capable of controlling a spacing between a magnetic recording medium and the at least one magnetic read head element by heating. A gain SG (nm/° C.) of the spacing is greater than a spacing gain threshold SGTHLD (nm/° C.) defined by the following expression: SGLIMT=A*dPTP+B A=1.4642E−02*exp(−6.6769E−05*LRDMF) B=4.9602E−01*exp(−2.0423E−03*LRDMF) where dPTP represents an amount of change in protrusion (nm) of a top end of the at least one inductive write head element and/or the at least one read magnetic head element by heating, and LRDMF represents a line recording density (kFCI) at a frequency half of the maximum recording frequency.
摘要翻译：薄膜磁头包括至少一个感应写头元件和至少一个读磁头元件，能够通过加热来控制磁记录介质和至少一个磁读头元件之间的间隔。间隔的增益SG（nm /℃）大于由以下表达式定义的间隔增益阈值SG （nm /℃）：<？在线公式描述 =“直线公式”end =“lead”？> SG _{LIMT = A * dPTP + B <？in-line-formula description =“In-line Formulas”end =“tail”？ > A = 1.4642E-02 * exp（-6.6769E-05 * LRD MF）B = 4.9602E-01 * exp（-2.0423E-03 * LRD MF MF ）其中dPTP表示通过加热至少一个感应写入头元件和/或至少一个读磁头元件的顶端的突起（nm）的变化量，并且LRD < 表示在最大记录频率的一半频率处的行记录密度（kFCI）。}

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式