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11. 发明授权

US08246749B2 Substrate processing apparatus and semiconductor device producing method 有权
标题翻译：基板加工装置及半导体装置的制造方法
公开(公告)号：US08246749B2
公开(公告)日：2012-08-21
申请号：US11989488
申请日：2006-07-20
申请人： Jie Wang , Ryuji Yamamoto , Sadao Nakashima
发明人： Jie Wang , Ryuji Yamamoto , Sadao Nakashima
IPC分类号： C23C16/44 , H01L21/31
CPC分类号： H01L21/67109 , C23C16/4401
摘要： Disclosed is a substrate processing apparatus, including a reaction tube to process a substrate therein, wherein the reaction tube includes an outer tube, an inner tube disposed inside the outer tube, and a support section to support the inner tube, the inner tube and the support section are made of quartz or silicon carbide, and a shock-absorbing member is provided between the support section and the inner tube.
摘要翻译：公开了一种基板处理装置，其包括在其中处理基板的反应管，其中反应管包括外管，设置在外管内的内管和支撑部分，以支撑内管，内管和支撑部分由石英或碳化硅制成，并且在支撑部分和内管之间设置有减震构件。

12. 发明申请

US20110212599A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SUBSTRATE AND SUBSTRATE PROCESSING APPARATUS 失效
标题翻译：制造半导体器件的方法，制造衬底和衬底加工装置的方法
公开(公告)号：US20110212599A1
公开(公告)日：2011-09-01
申请号：US13036330
申请日：2011-02-28
申请人： Koei Kuribayashi , Yoshinori Imai , Sadao Nakashima , Takafumi Sasaki
发明人： Koei Kuribayashi , Yoshinori Imai , Sadao Nakashima , Takafumi Sasaki
IPC分类号： H01L21/20 , C23C16/455 , C23C16/458 , H01L21/00
CPC分类号： H01L21/0262 , C23C16/325 , C23C16/45578 , H01L21/02529 , H01L21/67109
摘要： Provided is a method of manufacturing a semiconductor device using a substrate processing apparatus including a reaction chamber in which a plurality of substrates are stacked at a predetermined distance; a first gas supply nozzle installed to extend to a region in which the plurality of substrates are stacked; a second gas supply nozzle installed to extend to a different position from a position at which the first gas supply nozzle is installed in the region in which the plurality of substrates are stacked; a first branch nozzle installed at the first gas supply nozzle in a direction parallel to major surfaces of the plurality of substrates, at least one line of which is branched in a direction of the second gas supply nozzle, and including at least one first gas supply port; and a second branch nozzle installed at the second gas supply nozzle in the direction parallel to the major surfaces of the plurality of substrates, at least one line of which is branched in a direction of the first gas supply nozzle, and including at least one second gas supply port; wherein the first gas supply port and the second gas supply port are installed adjacent to each other in a direction that the plurality of substrates are stacked, the method including the steps of: loading the plurality of substrates into the reaction chamber; and forming SiC films by supplying at least a silicon-containing gas and a chlorine-containing gas or a silicon/chlorine-containing gas through the first gas supply port and supplying at least a carbon-containing gas and a reduction gas through the second gas supply port.
摘要翻译：提供一种使用基板处理设备制造半导体器件的方法，该基板处理设备包括其中多个基板以预定距离堆叠的反应室; 第一气体供给喷嘴，其安装成延伸到所述多个基板堆叠的区域; 第二气体供给喷嘴，其安装成在与堆叠所述多个基板的区域中延伸到与所述第一气体供给喷嘴的位置不同的位置; 第一分支喷嘴，其安装在所述第一气体供给喷嘴的平行于所述多个基板的主表面的方向上，所述第一分支喷嘴的至少一条线沿所述第二气体供给喷嘴的方向分支，并且包括至少一个第一气体供应港口; 以及第二分支喷嘴，其在与所述多个基板的主表面平行的方向上安装在所述第二气体供给喷嘴处，所述第二分支喷嘴的至少一条线沿所述第一气体供给喷嘴的方向分支，并且包括至少一个第二喷嘴供气口; 其特征在于，所述第一气体供给口和所述第二气体供给口沿所述多个基板层叠的方向彼此相邻地安装，所述方法包括以下步骤：将所述多个基板装载到所述反应室中; 以及通过经由所述第一气体供给口至少供给含硅气体和含氯气体或含硅/氯气体而形成SiC膜，并且通过所述第二气体供给至少含碳气体和还原气体供应口。

13. 发明申请

US20090311873A1 Substrate processing apparatus and semiconductor device producing method 有权
标题翻译：基板加工装置及半导体装置的制造方法
公开(公告)号：US20090311873A1
公开(公告)日：2009-12-17
申请号：US11989488
申请日：2006-07-20
申请人： Jie Wang , Ryuji Yamamoto , Sadao Nakashima
发明人： Jie Wang , Ryuji Yamamoto , Sadao Nakashima
IPC分类号： H01L21/30
CPC分类号： H01L21/67109 , C23C16/4401
摘要： Disclosed is a substrate processing apparatus, including a reaction tube to process a substrate therein, wherein the reaction tube includes an outer tube, an inner tube disposed inside the outer tube, and a support section to support the inner tube, the inner tube and the support section are made of quartz or silicon carbide, and a shock-absorbing member is provided between the support section and the inner tube.
摘要翻译：公开了一种基板处理装置，其包括在其中处理基板的反应管，其中反应管包括外管，设置在外管内的内管和支撑部分，以支撑内管，内管和支撑部分由石英或碳化硅制成，并且在支撑部分和内管之间设置有减震构件。

14. 发明申请

US20080268644A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS 审中-公开
标题翻译：半导体器件和衬底加工设备的制造方法
公开(公告)号：US20080268644A1
公开(公告)日：2008-10-30
申请号：US12068330
申请日：2008-02-05
申请人： Kenji Kameda , Naonori Akae , Kenichi Suzaki , Yushin Takasawa , Sadao Nakashima
发明人： Kenji Kameda , Naonori Akae , Kenichi Suzaki , Yushin Takasawa , Sadao Nakashima
IPC分类号： H01L21/306
CPC分类号： C23C16/4405 , H01L21/3185
摘要： There are provided the steps of loading a substrate into a reaction vessel; forming a film on the substrate while supplying a film forming gas into the reaction vessel; unloading the substrate after film formation from the reaction vessel; supplying a cleaning gas into the reaction vessel while lowering a temperature in the reaction vessel and removing a deposit deposited on at least an inner wall of the reaction vessel in the film forming step.
摘要翻译：提供了将基底装载到反应容器中的步骤; 在将所述成膜气体供给到所述反应容器中的同时在所述基板上形成膜; 从反应容器中成膜后卸载基材; 在降低反应容器内的温度的同时将清洗气体供给到反应容器中，并且在成膜步骤中除去沉积在反应容器的至少内壁上的沉积物。

15. 发明授权

US5658809A SOI substrate and method of producing the same 失效
标题翻译： SOI衬底及其制造方法
公开(公告)号：US5658809A
公开(公告)日：1997-08-19
申请号：US403518
申请日：1995-03-13
申请人： Sadao Nakashima , Katsutoshi Izumi , Norihiko Ohwada , Tatsuhiko Katayama
发明人： Sadao Nakashima , Katsutoshi Izumi , Norihiko Ohwada , Tatsuhiko Katayama
IPC分类号： H01L21/76 , H01L21/02 , H01L21/265 , H01L21/31 , H01L21/762 , H01L21/86 , H01L27/00 , H01L27/12
CPC分类号： H01L21/26533 , H01L21/76243
摘要： A method of producing an SOI substrate having a single-crystal silicon layer on a buried oxide layer in an electrically insulating state from the substrate by implanting oxygen ions into a single crystal silicon substrate and practicing an anneal processing in an inert gas atmosphere at high temperatures to form the buried oxide layer. After the anneal processing in which the thickness of the buried oxide layer becomes a theoretical value in conformity with the thickness of the buried oxide layer formed by the implanted oxygen, the oxidation processing of the substrate is carried out in a high temperature oxygen atmosphere.
摘要翻译：一种通过将氧离子注入单晶硅衬底并在高温下在惰性气体气氛中进行退火处理的方法来制造具有电绝缘状态的掩埋氧化层上的单晶硅层的SOI衬底以形成掩埋氧化物层。在掩埋氧化物层的厚度成为与由注入氧形成的掩埋氧化物层的厚度一致的理论值的退火处理之后，基板的氧化处理在高温氧气氛中进行。

16. 发明申请

US20120315767A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SUBSTRATE AND SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：制造半导体器件的方法，制造衬底和衬底加工装置的方法
公开(公告)号：US20120315767A1
公开(公告)日：2012-12-13
申请号：US13580933
申请日：2011-02-22
申请人： Takafumi Sasaki , Yoshinori Imai , Koei Kuribayashi , Sadao Nakashima
发明人： Takafumi Sasaki , Yoshinori Imai , Koei Kuribayashi , Sadao Nakashima
IPC分类号： H01L21/31 , C23C16/32
CPC分类号： C23C16/45578 , C23C16/325 , H01L21/02529 , H01L21/02532 , H01L21/02573 , H01L21/0262 , Y10S438/931
摘要： A method of manufacturing a semiconductor device by using a substrate processing apparatus comprises a reaction chamber configured to process a plurality of substrates stacked at predetermined intervals, wherein a first gas flow from a first gas supply inlet and a second gas flow from a second gas supply inlet are crossed with each other before these gas flows reach the substrates. The method of manufacturing a semiconductor device comprises: loading the plurality of substrates into the reaction chamber; supplying a silicon-containing gas and a chlorine-containing gas from the first gas supply inlet into the reaction chamber, supplying a carbon-containing gas and a reducing gas from the second gas supply inlet into the reaction chamber and supplying a dopant-containing gas into the reaction chamber from the first gas supply inlet or the second gas supply inlet; and unloading the substrates from the reaction chamber.
摘要翻译：通过使用基板处理装置制造半导体器件的方法包括：反应室，被配置为处理以预定间隔堆叠的多个基板，其中来自第一气体供应入口的第一气体流和来自第二气体供应源的第二气体流入口在这些气体流到达基板之前彼此交叉。制造半导体器件的方法包括：将多个衬底装载到反应室中; 将来自所述第一气体供给口的含硅气体和含氯气体供给到所述反应室中，将来自所述第二气体供给口的含碳气体和还原气体供给到所述反应室内，并供给含掺杂剂的气体从第一供气口或第二供气口进入反应室; 并从反应室中卸载基板。

17. 发明授权

US08679989B2 Method of manufacturing semiconductor device including removal of deposits from process chamber and supply portion 有权
标题翻译：制造半导体器件的方法，包括从处理室和供应部分去除沉积物
公开(公告)号：US08679989B2
公开(公告)日：2014-03-25
申请号：US12224879
申请日：2007-03-27
申请人： Sadao Nakashima , Takahiro Maeda , Kiyohiko Maeda , Kenji Kameda , Yushin Takasawa
发明人： Sadao Nakashima , Takahiro Maeda , Kiyohiko Maeda , Kenji Kameda , Yushin Takasawa
IPC分类号： H01L21/31
CPC分类号： C23C16/4405 , B08B7/00
摘要： A method of manufacturing a semiconductor device has: carrying a substrate into a process chamber; depositing a thin film on the substrate by supplying inside the process chamber a first film deposition gas including at least one element among plural elements forming a thin film to be deposited and capable of accumulating a film solely and a second film deposition gas including at least another element among the plural elements and incapable of accumulating a film solely; carrying the substrate on which is deposited the thin film out from inside the process chamber; and removing a first sediment adhering to an interior of the process chamber and a second sediment adhering to an interior of the supply portion and having a chemical composition different from a chemical composition of the first sediment by supplying cleaning gases inside the process chamber and inside a supply portion that supplies the first film deposition gas while changing at least one of a supply flow rate, a concentration, and a type between a cleaning gas to be supplied inside the process chamber and a cleaning gas to be supplied inside the supply portion.
摘要翻译：制造半导体器件的方法具有：将衬底运送到处理室中; 通过在所述处理室内部供给包括形成要沉积的薄膜的多个元素中的至少一个元素并且能够单独地积聚膜的第一膜沉积气体和包括至少另一个的第二膜沉积气体而在所述基板上沉积薄膜元素，不能单独积聚; 携带其上沉积有薄膜的基板从处理室内部; 以及除去附着在处理室内部的第一沉淀物和附着在供应部分内部的第二沉淀物，并且具有与第一沉积物的化学成分不同的化学组成，其中通过在处理室内部和内部提供清洁气体供给部，其供给第一成膜气体，同时改变供给流量，浓度和待处理室内供给的清洗气体与要供给到供给部内部的清洗气体之间的种类中的至少一种。

18. 发明申请

US20100275848A1 HEAT TREATMENT APPARATUS 有权
标题翻译：热处理设备
公开(公告)号：US20100275848A1
公开(公告)日：2010-11-04
申请号：US12768191
申请日：2010-04-27
申请人： Masanao Fukuda , Kenji Shirako , Akihiro Sato , Kazuhiro Morimitsu , Sadao Nakashima
发明人： Masanao Fukuda , Kenji Shirako , Akihiro Sato , Kazuhiro Morimitsu , Sadao Nakashima
IPC分类号： C23C16/32
CPC分类号： C23C16/325 , C23C16/4401 , C23C16/45574 , C30B25/10 , C30B25/14 , C30B29/36
摘要： Provided is a heat treatment apparatus that can form films having a uniform thickness on a plurality of substrates. The heat treatment apparatus comprises a process chamber configured to grow silicon carbide (SiC) films on wafers, a boat configured to hold a plurality of wafers in a state where the wafers are vertically arranged and approximately horizontally oriented so as to hold the wafers in the process chamber, a heating unit installed in the processing chamber, and a gas supply nozzle configured to supply a reaction gas. The heating unit comprises a susceptor configured to cover at least a part of the boat, and a susceptor wall disposed between the boat and the susceptor.
摘要翻译：提供一种能够在多个基板上形成均匀厚度的膜的热处理装置。所述热处理装置包括：处理室，被配置为在晶片上生长碳化硅（SiC）膜;舟状结构，用于在所述晶片垂直布置且大致水平定向的状态下保持多个晶片，以将所述晶片保持在所述晶片中处理室，安装在处理室中的加热单元和构造成供应反应气体的气体供给喷嘴。加热单元包括构造成覆盖船的至少一部分的基座和设置在船和基座之间的基座壁。

19. 发明申请

US20090305517A1 Method of Manufacturing Semiconductor Device and Substrate Processing Apparatus 有权
标题翻译：制造半导体器件和衬底处理设备的方法
公开(公告)号：US20090305517A1
公开(公告)日：2009-12-10
申请号：US12224879
申请日：2007-03-27
申请人： Sadao Nakashima , Takahiro Maeda , Kiyohiko Maeda , Kenji Kameda , Yushin Takasawa
发明人： Sadao Nakashima , Takahiro Maeda , Kiyohiko Maeda , Kenji Kameda , Yushin Takasawa
IPC分类号： H01L21/469 , C23C16/46
CPC分类号： C23C16/4405 , B08B7/00
摘要： A method of manufacturing a semiconductor device has: carrying a substrate into a process chamber; depositing a thin film on the substrate by supplying inside the process chamber a first film deposition gas including at least one element among plural elements forming a thin film to be deposited and capable of accumulating a film solely and a second film deposition gas including at least another element among the plural elements and incapable of accumulating a film solely; carrying the substrate on which is deposited the thin film out from inside the process chamber; and removing a first sediment adhering to an interior of the process chamber and a second sediment adhering to an interior of the supply portion and having a chemical composition different from a chemical composition of the first sediment by supplying cleaning gases inside the process chamber and inside a supply portion that supplies the first film deposition gas while changing at least one of a supply flow rate, a concentration, and a type between a cleaning gas to be supplied inside the process chamber and a cleaning gas to be supplied inside the supply portion.
摘要翻译：制造半导体器件的方法具有：将衬底运送到处理室中; 通过在所述处理室内部供给包括形成要沉积的薄膜的多个元素中的至少一个元素并且能够单独地积聚膜的第一膜沉积气体和包括至少另一个的第二膜沉积气体而在所述基板上沉积薄膜元素，不能单独积聚; 携带其上沉积有薄膜的基板从处理室内部; 以及除去附着在处理室内部的第一沉淀物和附着在供应部分内部的第二沉淀物，并且具有与第一沉积物的化学成分不同的化学组成，其中通过在处理室内部和内部提供清洁气体供给部，其供给第一成膜气体，同时改变供给流量，浓度和待处理室内供给的清洗气体与要供给到供给部内部的清洗气体之间的种类中的至少一种。

20. 发明申请

US20090061651A1 Substrate processing apparatus and method for manufacturing semiconductor device 审中-公开
标题翻译：基板处理装置及半导体装置的制造方法
公开(公告)号：US20090061651A1
公开(公告)日：2009-03-05
申请号：US12230679
申请日：2008-09-03
申请人： Sadao Nakashima , Takahiro Maeda , Jie Wang
发明人： Sadao Nakashima , Takahiro Maeda , Jie Wang
IPC分类号： C23C16/34 , H01L21/31
CPC分类号： C23C16/345 , C23C16/4404
摘要： A substrate processing apparatus comprising: a reaction tube that processes a substrate; a support portion that supports the substrate in the reaction tube; a process gas supply line that supplies a process gas into the reaction tube; and an exhaust line that exhausts an inside of the reaction tube, wherein the process gas is supplied into the reaction tube to form a silicon nitride film on the substrate, at least the reaction tube is made of quartz, a plurality of projections are provided on the inner wall of the reaction tube, and the diameter of the projections is larger than 2 μm but smaller than 86 μm.
摘要翻译：一种基板处理装置，包括：处理基板的反应管; 支撑部，其支撑反应管中的基板; 将处理气体供给到反应管的工艺气体供给管线; 以及排出反应管内部的排气管，其中处理气体被供给到反应管中以在基板上形成氮化硅膜，至少反应管由石英制成，多个突起设置在反应管的内壁和突起的直径大于2μm但小于86μm。

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