专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明授权

US5460687A Anisotropic liquid phase photochemical etch 失效
标题翻译：各向异性液相光化学蚀刻
公开(公告)号：US5460687A
公开(公告)日：1995-10-24
申请号：US246388
申请日：1994-05-20
申请人： Monte A. Douglas
发明人： Monte A. Douglas
IPC分类号： C23F1/02 , C23F4/02 , H01L21/306 , H01L21/3065 , H01L21/3213 , B44C1/22
CPC分类号： C23F1/02 , H01L21/30655 , H01L21/32134
摘要： An anisotropic liquid phase photochemical etch is performed by submersing a substrate 30 (e.g. copper) in a liquid 34 containing an etchant (e.g. hydrochloric acid) and a passivant (e.g. iodine), the passivant forming an insoluble passivation layer 36 (e.g. Cul) on the surface, preventing the etchant from etching the surface. The passivant and its concentration are chosen such that the passivation layer 36 has a solubility which is substantially increased when it is illuminated with radiation 38 (e.g. visible/ultraviolet light). Portions of the surface are then illuminated with radiation 38, whereby the passivation layer 36 is removed from those illuminated portions of the surface, allowing the etch to proceed there. Portions of the surface not illuminated are not etched, resulting in an anisotropic etch. Preferably, an etch mask 32 is used to create the unilluminated areas. This etch mask 32 may be formed on the surface or it may be interposed between the surface and the radiation source.
摘要翻译：通过将衬底30（例如铜）浸没在含有蚀刻剂（例如盐酸）和钝化剂（例如碘））的液体34中来进行各向异性液相光化学蚀刻，钝化剂形成不溶性钝化层36（例如Cul）表面，防止蚀刻剂蚀刻表面。选择钝化剂及其浓度使得钝化层36具有当用辐射38（例如可见/紫外光）照射时基本上增加的溶解度。然后用辐射38照射表面的部分，由此钝化层36从表面的那些照射部分移除，允许蚀刻在那里进行。未被照射的表面的部分没有蚀刻，导致各向异性蚀刻。优选地，使用蚀刻掩模32来产生未发光的区域。该蚀刻掩模32可以形成在表面上，或者它可以插入在表面和辐射源之间。

12. 发明授权

US5431774A Copper etching 失效
标题翻译：铜蚀刻
公开(公告)号：US5431774A
公开(公告)日：1995-07-11
申请号：US277534
申请日：1994-07-19
申请人： Monte A. Douglas
发明人： Monte A. Douglas
IPC分类号： C23F4/00 , H01L21/3213 , H05K3/02 , B44C1/22 , C23F1/00
CPC分类号： C23F4/00 , H01L21/32136 , H05K3/02
摘要： A dry etch for metals such as copper using .pi.-acids in an energetic environment such as a plasma, laser, or afterglow reactor (102) or by using ligands forming volatiles at low temperature within a pulsed energetic environment.
摘要翻译：在诸如等离子体，激光或余辉反应器（102）的能量环境中使用PI-酸的金属（例如铜）的干蚀刻，或通过在脉冲能量环境内通过使用在低温下形成挥发物的配体进行干蚀刻。

13. 发明授权

US5312516A Anisotropic tantalum pentoxide etch 失效
标题翻译：各向异性五氧化二钽蚀刻
公开(公告)号：US5312516A
公开(公告)日：1994-05-17
申请号：US041302
申请日：1993-03-31
申请人： Monte A. Douglas , Howard R. Beratan , Scott R. Summerfelt
发明人： Monte A. Douglas , Howard R. Beratan , Scott R. Summerfelt
IPC分类号： C09K13/00 , C04B41/53 , C23F1/04 , G03F7/20 , H01L21/02 , H01L21/311 , B44C1/22 , C23F1/00
CPC分类号： C04B41/5353 , G03F7/2041 , H01L21/31111 , H01L28/55
摘要： A tantalum pentoxide substrate 34 immersed in a liquid ambient (e.g. 10% hydrofluoric acid 30) and illuminated with radiation (e.g. collimated visible/ultraviolet radiation 24) produced by a radiation source (e.g. a 200 Watt mercury xenon arc lamp 20). A window 26 which is substantially transparent to the collimated radiation 24 allows the radiated energy to reach the Ta.sub.2 O.sub.5 substrate 34. An etch mask (e.g. organic photoresist 32) may be positioned between the radiation source 20 and the substrate 34. The Ta.sub.2 O.sub.5 substrate 34 and liquid ambient 30 are maintained at a nominal temperature (e.g. 25.degree. C.). Without illumination, the Ta.sub.2 O.sub.5 is not appreciably etched by the liquid ambient. Upon illumination the etch rate is substantially increased.
摘要翻译：浸渍在液体环境（例如10％氢氟酸30）中并用辐射源（例如，200瓦汞氙弧灯20）产生的辐射（例如准直可见/紫外线辐射24）照射的五氧化二钽基材34。对准直辐射24基本上透明的窗26允许辐射能到达Ta 2 O 5衬底34.蚀刻掩模（例如有机光致抗蚀剂32）可以位于辐射源20和衬底34之间.Ta 2 O 5衬底34和液体环境30保持在标称温度（例如25℃）。在没有照明的情况下，Ta2O5不会受到液体环境的明显腐蚀。在照射时，蚀刻速率显着增加。

14. 发明授权

US4957590A Method for forming local interconnects using selective anisotropy 失效
标题翻译：使用选择性各向异性形成局部互连的方法
公开(公告)号：US4957590A
公开(公告)日：1990-09-18
申请号：US402944
申请日：1989-09-05
申请人： Monte A. Douglas
发明人： Monte A. Douglas
IPC分类号： C01B23/00 , H01L21/302 , H01L21/3065 , H01L21/311 , H01L21/3213 , H01L21/768 , H01L23/532
CPC分类号： H01L21/31116 , H01L21/32136 , H01L21/32137 , H01L21/32139 , H01L21/76895 , H01L23/53257 , H01L2924/0002
摘要： A method for etching titanium nitride local interconnects is disclosed. A layer of titaniun nitride is either formed as a by-product of the formation of titanium silicide by direct reaction or by deposition. The location of the interconnects is defined by patterning photoresist at the desired locations. A plasma etch using a chlorine-bearing agent such as CCl.sub.4 as the etchant etches the titanium nitride anisotropically at those locations covered by photoresist, and isotropically elsewhere, so that filaments of the titanium nitride are removed without undercutting the photoresist mask. The etch is selective relative to the underlying material, such as a refractory metal silicide, refractory metals, or silicon, due to the passivation of the underlying material by the carbon atoms of the CCl.sub.4. The selectivity, together with the selective anisotropy, even allows significant overetch of the material to remove the filaments without undercutting the masked interconnect material.
摘要翻译：公开了一种用于蚀刻氮化钛局部互连的方法。一层氮化钛是通过直接反应或通过沉积形成硅化钛的副产物形成的。互连的位置通过在期望的位置处图案化光刻胶来限定。使用含氯试剂如CCl4作为蚀刻剂的等离子体蚀刻在各种各向异性地蚀刻氮化钛，在由光致抗蚀剂覆盖的位置处各向异性地蚀刻氮化钛，从而去除氮化钛的细丝而不使光刻胶掩模下切。由于CCl4的碳原子钝化下面的材料，蚀刻相对于下面的材料是可选择的，例如难熔金属硅化物，难熔金属或硅。选择性以及选择性各向异性甚至允许材料的显着过蚀刻去除长丝，而不会掩盖掩蔽的互连材料。

15. 发明授权

US4793896A Method for forming local interconnects using chlorine bearing agents 失效
标题翻译：使用含氯剂形成局部互连的方法
公开(公告)号：US4793896A
公开(公告)日：1988-12-27
申请号：US159852
申请日：1988-02-22
申请人： Monte A. Douglas
发明人： Monte A. Douglas
IPC分类号： C23F1/12 , H01L21/302 , H01L21/3065 , H01L21/311 , H01L21/3213 , H01L21/768 , B44C , C03C15/00 , C03C25/06 , C23F1/02
CPC分类号： H01L21/31116 , H01L21/32137 , H01L21/76895
摘要： A method for etching titanium nitride local interconnects is disclosed. A layer of titanium nitride is formed as a by-product of the formation of titanium silicide by direct reaction; this layer of titanium nitride is present over the titanium silicide layer, as well as over insulators such as oxide. A plasma etch using CCl.sub.4 as the etchant is used to etch the titanium nitride anisotropically, and selectively relative to the titanium silicide due to the passivation of the titanium silicide surface by the carbon atoms of the CCl.sub.4. Excess chlorine concentration may be reduced, further reducing the undesired etching of the titanium silicide, by providing a consumable power electrode, or by introducing chlorine scavenger gases into the reactor. The plasma may be ignited by exposing the gases to a mercury/argon light source, photodetaching electrons from the anions in the gas.

16. 发明授权

US4784720A Trench etch process for a single-wafer RIE dry etch reactor 失效
标题翻译：单晶片RIE干蚀刻反应器的沟槽蚀刻工艺
公开(公告)号：US4784720A
公开(公告)日：1988-11-15
申请号：US071111
申请日：1987-07-08
申请人： Monte A. Douglas
发明人： Monte A. Douglas
IPC分类号： H01L21/3065 , H01L21/308 , H01L21/306 , B05D3/06 , B44C1/22 , C03C15/00
CPC分类号： H01L21/30655 , H01L21/3065 , H01L21/3085
摘要： A plasma dry etch process for trench etching in single slice RIE etch reactors wherein a selective sidewall passivation is accomplished to control the profile of the trench being etched. The process comprises methods of passivating the sidewall by passivation on a molecular scale and by passivation by a veneer type passivation comprising buildup of a macroscopic residue over the surface of the sidewall. Several methods are disclosed for forming and shaping the passivating layers (both mono-atomic and bulk). By carefully controlling the composition and shape of the sidewall passivating veneer in conjunction with other etch factors, the desired trench profiles can be achieved.
摘要翻译：用于在单切片RIE蚀刻反应器中进行沟槽蚀刻的等离子体干蚀刻工艺，其中实现选择性侧壁钝化以控制被蚀刻的沟槽的轮廓。该方法包括通过在分子尺度上的钝化钝化侧壁的方法，以及通过在侧壁的表面上形成宏观残留物的单板型钝化来钝化。公开了用于形成和成形钝化层（单原子和本体）的几种方法。通过结合其他蚀刻因子仔细控制侧壁钝化单板的组成和形状，可以实现所需的沟槽轮廓。

17. 发明授权

US06432317B1 Method to produce masking 失效
标题翻译：产生掩蔽的方法
公开(公告)号：US06432317B1
公开(公告)日：2002-08-13
申请号：US08286106
申请日：1994-08-04
申请人： Monte A. Douglas , Richard A. Stoltz
发明人： Monte A. Douglas , Richard A. Stoltz
IPC分类号： H01L213065
CPC分类号： B82Y30/00 , B82Y10/00 , C23C16/04 , G03C5/58 , G03F7/2043 , Y10S148/105 , Y10S438/945
摘要： This is a method for masking a structure 12 for patterning micron and submicron features, the method comprises: forming at least one monolayer 32 of adsorbed molecules on the structure; prenucleating portions 46,48 of the adsorbed layer by exposing the portions corresponding to a desired pattern 36 of an energy source 42; and selectively forming build-up layers 66,68 over the prenucleated portions to form a mask over the structure to be patterned. Other methods are also disclosed.
摘要翻译：这是用于掩蔽用于图案化微米和亚微米特征的结构12的方法，所述方法包括：在结构上形成吸附分子的至少一个单层32; 通过暴露对应于能量源42的期望图案36的部分，来吸附层的原核部分46,48; 并且在去核部分之上选择性地形成积层66,68以在待图案化的结构上形成掩模。还公开了其它方法。

18. 发明授权

US06177358B1 Photo-stimulated etching of CaF2 失效
标题翻译：光激发蚀刻CaF2
公开(公告)号：US06177358B1
公开(公告)日：2001-01-23
申请号：US08175865
申请日：1993-12-30
申请人： Monte A. Douglas
发明人： Monte A. Douglas
IPC分类号： H01L21302
CPC分类号： H01L21/31111
摘要： Generally, and in one form of the invention, a method is presented for the photo-stimulated etching of a CaF2 surface 12, comprising the steps of exposing the CaF2 surface 12 to an ambient species 16, exciting the CaF2 surface 12 and/or the ambient species 16 by photo-stimulation sufficiently to allow reaction of the CaF2 surface 12 with the ambient species 16 to form CaF2 ambient species products, and removing the ambient species 16 and the CaF2 ambient species products from the CaF2 surface 12. Other devices, systems and methods are also disclosed.
摘要翻译：通常，在本发明的一种形式中，提出了用于CaF2表面12的光刺激蚀刻的方法，包括以下步骤：将CaF 2表面12暴露于环境物质16，激发CaF 2表面12和/或环境物质16通过光刺激足以允许CaF 2表面12与环境物质16反应以形成CaF 2环境物质产物，以及从CaF 2表面12除去环境物质16和CaF 2环境物质产物。其它装置，系统并且还公开了方法。

19. 发明授权

US5868862A Method of removing inorganic contamination by chemical alteration and extraction in a supercritical fluid media 失效
标题翻译：在超临界流体介质中通过化学改变和萃取去除无机污染物的方法
公开(公告)号：US5868862A
公开(公告)日：1999-02-09
申请号：US903907
申请日：1997-07-31
申请人： Monte A. Douglas , Allen C. Templeton
发明人： Monte A. Douglas , Allen C. Templeton
IPC分类号： B08B3/08 , B08B7/00 , C11D7/50 , C11D11/00 , H01L21/304 , H01L21/306 , B08B3/00
CPC分类号： H01L21/02046 , B08B3/08 , B08B7/0021 , C11D11/0023 , C11D7/50 , Y10S134/902 , Y10S438/902
摘要： A method of removing inorganic contamination (contamination 104 of FIGS. 2a-2b) from a layer (layer 102) overlying a substrate (substrate 100), the method comprising the steps of: removing the layer overlying the substrate with at least one removal agent; reacting the inorganic contamination with at least one conversion agent, thereby converting the inorganic contamination; removing the converted inorganic contamination by subjecting it to at least one solvent agent, the solvent agent included in a first supercritical fluid; and wherein the converted inorganic contamination is more highly soluble in the solvent agent than the inorganic contamination.
摘要翻译：从覆盖衬底（衬底100）的层（层102）去除无机污染物（图2a-2b的污染物104）的方法，该方法包括以下步骤：用至少一种去除剂去除覆盖衬底的层 ; 使无机污染与至少一种转化剂反应，从而转化无机污染物; 通过使转化的无机污染物经受至少一种溶剂，除去第一超临界流体中所含的溶剂; 并且其中转化的无机污染物比无机污染物在溶剂中更易溶解。

20. 发明授权

US5584938A Electrostatic particle removal and characterization 失效
标题翻译：静电除尘和表征
公开(公告)号：US5584938A
公开(公告)日：1996-12-17
申请号：US166321
申请日：1993-12-10
申请人： Monte A. Douglas
发明人： Monte A. Douglas
IPC分类号： B08B6/00 , H01L21/00 , A47L13/40
CPC分类号： H01L21/67028 , B08B6/00 , Y10S422/906 , Y10T436/25375
摘要： An electrostatic decontamination method and decontamination device (10) is disclosed for decontaminating the surface of a semiconductor substrate. The decontamination device (10) includes particle ionizing device (24) that charges contaminating particles (26) on the surface of semiconductor substrate (16) thereby creating ionized particles. Decontamination device (10) also includes substrate biasing device (12) for creating a charge accumulation layer (14) at the top of semiconductor substrate (16) so that the charge accumulation layer (14) has the same charge sign as the ionized particles. In addition, the invention analytically characterizes particles using contaminating particle isolator (44) which contains a particle ionizing device (24) that charges contaminating particles (26) on the surface of semiconductor substrate (16) thereby creating ionized particles. Contaminating particle isolator (44) includes substrate biasing device (12) operable to create charge accumulation layer (14) at the top of semiconductor substrate (16) so that the charge accumulation layer (14) has the same charge sign as the ionized particles. Contaminating particle isolator (44) also includes particle collector (46) that collects the ionized particles. This permits characterizing the particles to determine their chemical composition.
摘要翻译：公开了一种用于对半导体衬底的表面进行净化的静电去污方法和去污设备（10）。净化装置（10）包括对半导体衬底（16）的表面上的污染颗粒（26）进行充电的颗粒电离装置（24），由此产生电离颗粒。去污设备（10）还包括用于在半导体衬底（16）的顶部产生电荷累积层（14）的衬底偏压器件（12），使得电荷累积层（14）具有与电离粒子相同的电荷符号。此外，本发明使用污染粒子隔离器（44）分析地表征粒子，其包含对半导体衬底（16）的表面上的污染颗粒（26）进行电荷的粒子离子化装置（24），由此产生电离粒子。污染粒子隔离器（44）包括可操作以在半导体衬底（16）的顶部产生电荷累积层（14）的衬底偏置器件（12），使得电荷累积层（14）具有与电离粒子相同的电荷符号。污染粒子隔离器（44）还包括收集离子化颗粒的颗粒收集器（46）。这允许表征颗粒以确定其化学组成。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式