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11. 发明授权

US08642986B2 Integrated circuit having microelectromechanical system device and method of fabricating the same 有权
标题翻译：具有微机电系统装置的集成电路及其制造方法
公开(公告)号：US08642986B2
公开(公告)日：2014-02-04
申请号：US12565154
申请日：2009-09-23
申请人： Tzung-Han Tan , Bang-Chiang Lan , Ming-I Wang , Tzung-I Su , Chien-Hsin Huang , Hui-Min Wu , Chao-An Su , Min Chen , Meng-Jia Lin
发明人： Tzung-Han Tan , Bang-Chiang Lan , Ming-I Wang , Tzung-I Su , Chien-Hsin Huang , Hui-Min Wu , Chao-An Su , Min Chen , Meng-Jia Lin
IPC分类号： H01L29/84 , H01L21/30
CPC分类号： B81C1/00238
摘要： An integrated circuit (IC) having a microelectromechanical system (MEMS) device buried therein is provided. The integrated circuit includes a substrate, a metal-oxide semiconductor (MOS) device, a metal interconnect, and the MEMS device. The substrate has a logic circuit region and a MEMS region. The MOS device is located on the logic circuit region of the substrate. The metal interconnect, formed by a plurality of levels of wires and a plurality of vias, is located above the substrate to connect the MOS device. The MEMS device is located on the MEMS region, and includes a sandwich membrane located between any two neighboring levels of wires in the metal interconnect and connected to the metal interconnect.
摘要翻译：提供了一种其中埋有微机电系统（MEMS）器件的集成电路（IC）。集成电路包括衬底，金属氧化物半导体（MOS）器件，金属互连和MEMS器件。衬底具有逻辑电路区域和MEMS区域。 MOS器件位于衬底的逻辑电路区域上。由多层电线形成的金属互连和多个通孔位于衬底上方以连接MOS器件。 MEMS器件位于MEMS区域上，并且包括位于金属互连中的任何两个相邻电平线之间并连接到金属互连的夹层膜。

12. 发明授权

US08570772B2 Isolated flyback converter with efficient light load operation 有权
标题翻译：隔离式反激式转换器，具有高效的轻载操作
公开(公告)号：US08570772B2
公开(公告)日：2013-10-29
申请号：US13359447
申请日：2012-01-26
申请人： John D. Morris , Michael G. Negrete , Min Chen
发明人： John D. Morris , Michael G. Negrete , Min Chen
IPC分类号： H02M3/335
CPC分类号： H02M1/32 , H02M3/33584 , H02M3/33592 , H02M2001/0032 , Y02B70/1475 , Y02B70/16
摘要： A flyback converter uses primary side sensing to sense the output voltage for regulation feedback. Such sensing requires a predetermined minimum duty cycle even with very light load currents. Therefore, such a minimum duty cycle may create an over-voltage condition. In the flyback phase, after a minimum duty cycle of the power switch at light load currents, a synchronous rectifier turns off approximately when the current through the secondary winding falls to zero to create a discontinuous mode. If it is detected that there is an over-voltage, the synchronous rectifier is turned on for a brief interval to draw a reverse current through the secondary winding. When the synchronous rectifier shuts off, a current flows through the primary winding via a drain-body diode while the power switch is off. Therefore, excess power is transferred from the secondary side to the power source to reduce the over-voltage so is not wasted.
摘要翻译：反激转换器使用初级侧感测来检测输出电压以进行调节反馈。即使使用非常轻的负载电流，这种感测也需要预定的最小占空比。因此，这样的最小占空比可能产生过电压状态。在反激阶段，在轻负载电流下电源开关的最小占空比之后，当通过次级绕组的电流下降到零时，同步整流器大致关闭以产生不连续模式。如果检测到存在过电压，则同步整流器接通短暂的间隔以通过次级绕组产生反向电流。当同步整流器关闭时，电源开关关闭时，电流通过漏极体二极管流过初级绕组。因此，多余的功率从次级侧传输到电源，以减少过电压，因此不会浪费。

13. 发明授权

US08502382B2 MEMS and protection structure thereof 有权
标题翻译： MEMS及其保护结构
公开(公告)号：US08502382B2
公开(公告)日：2013-08-06
申请号：US13459268
申请日：2012-04-30
申请人： Bang-Chiang Lan , Ming-I Wang , Hui-Min Wu , Min Chen , Chien-Hsin Huang , Tzung-I Su , Chao-An Su , Tzung-Han Tan , Li-Che Chen , Meng-Jia Lin
发明人： Bang-Chiang Lan , Ming-I Wang , Hui-Min Wu , Min Chen , Chien-Hsin Huang , Tzung-I Su , Chao-An Su , Tzung-Han Tan , Li-Che Chen , Meng-Jia Lin
IPC分类号： H01L23/48
CPC分类号： H01L24/02 , B81B2207/015 , B81B2207/07 , B81B2207/115 , B81C1/00246 , B81C2203/0714 , H01L23/585 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/0104 , H01L2924/0105 , H01L2924/01072 , H01L2924/01074 , H01L2924/014 , H01L2924/04941 , H01L2924/05042 , H01L2924/1461 , H01L2924/00
摘要： A protection structure of a pad is provided. The pad is disposed in a dielectric layer on a semiconductor substrate and the pad includes a connection region and a peripheral region which encompasses the connection region. The protection structure includes at least a barrier, an insulation layer and a mask layer. The barrier is disposed in the dielectric layer in the peripheral region. The insulation layer is disposed on the dielectric layer. The mask layer is disposed on the dielectric layer and covers the insulation layer and the mask layer includes an opening to expose the connection region of the pad.
摘要翻译：提供垫的保护结构。衬垫设置在半导体衬底上的电介质层中，衬垫包括连接区域和包围连接区域的周边区域。保护结构至少包括屏障，绝缘层和掩模层。阻挡层设置在周边区域的电介质层中。绝缘层设置在电介质层上。掩模层设置在电介质层上并覆盖绝缘层，掩模层包括露出焊盘连接区域的开口。

14. 发明申请

US20130194836A1 Isolated Flyback Converter With Efficient Light Load Operation 有权
标题翻译：隔离反激式转换器，高效轻载操作
公开(公告)号：US20130194836A1
公开(公告)日：2013-08-01
申请号：US13359447
申请日：2012-01-26
申请人： John D. Morris , Michael G. Negrete , Min Chen
发明人： John D. Morris , Michael G. Negrete , Min Chen
IPC分类号： H02M3/335
CPC分类号： H02M1/32 , H02M3/33584 , H02M3/33592 , H02M2001/0032 , Y02B70/1475 , Y02B70/16
摘要： A flyback converter uses primary side sensing to sense the output voltage for regulation feedback. Such sensing requires a predetermined minimum duty cycle even with very light load currents. Therefore, such a minimum duty cycle may create an over-voltage condition. In the flyback phase, after a minimum duty cycle of the power switch at light load currents, a synchronous rectifier turns off approximately when the current through the secondary winding falls to zero to create a discontinuous mode. If it is detected that there is an over-voltage, the synchronous rectifier is turned on for a brief interval to draw a reverse current through the secondary winding. When the synchronous rectifier shuts off, a current flows through the primary winding via a drain-body diode while the power switch is off. Therefore, excess power is transferred from the secondary side to the power source to reduce the over-voltage so is not wasted.
摘要翻译：反激转换器使用初级侧感测来检测输出电压以进行调节反馈。即使使用非常轻的负载电流，这种感测也需要预定的最小占空比。因此，这样的最小占空比可能产生过电压状态。在反激阶段，在轻负载电流下电源开关的最小占空比之后，当通过次级绕组的电流下降到零时，同步整流器大致关闭以产生不连续模式。如果检测到存在过电压，则同步整流器接通短暂的间隔以通过次级绕组产生反向电流。当同步整流器关闭时，电源开关关闭时，电流通过漏极体二极管流过初级绕组。因此，多余的功率从次级侧传输到电源，以减少过电压，因此不会浪费。

15. 外观设计

USD673400S1 Chair back 有权
公开(公告)号：USD673400S1
公开(公告)日：2013-01-01
申请号：US29404716
申请日：2011-10-25
申请人： Min Chen
设计人： Min Chen

16. 发明授权

US08299555B2 Semiconductor optoelectronic structure 有权
标题翻译：半导体光电结构
公开(公告)号：US08299555B2
公开(公告)日：2012-10-30
申请号：US12618774
申请日：2009-11-15
申请人： Tzung-I Su , Chao-An Su , Ming-I Wang , Bang-Chiang Lan , Tzung-Han Tan , Hui-Min Wu , Chien-Hsin Huang , Min Chen , Meng-Jia Lin
发明人： Tzung-I Su , Chao-An Su , Ming-I Wang , Bang-Chiang Lan , Tzung-Han Tan , Hui-Min Wu , Chien-Hsin Huang , Min Chen , Meng-Jia Lin
IPC分类号： H01L31/0232
CPC分类号： G02B6/1228 , G02B6/12002 , G02B6/12004 , G02B6/136 , G02B6/428
摘要： A method of fabricating a semiconductor optoelectronic structure is provided. First, a substrate is provided, and a waveguide is formed therein, and then a plurality of dielectric layers is formed on the waveguide. Next, a contact pad and a passivation layer are provided on the dielectric layers and a patterned mask layer is formed thereon. Last, an etching process is provided by using the patterned mask layer to expose the contact pad and remove a portion of the passivation layer and the dielectric layers to form a transformer.
摘要翻译：提供一种制造半导体光电子结构的方法。首先，提供基板，并且在其中形成波导，然后在波导上形成多个电介质层。接下来，在电介质层上设置接触焊盘和钝化层，并且在其上形成图案化的掩模层。最后，通过使用图案化掩模层来暴露接触焊盘并去除钝化层和电介质层的一部分以形成变压器来提供蚀刻工艺。

17. 发明授权

US08096048B2 Method for fabricating MEMS structure 有权
标题翻译： MEMS结构的制造方法
公开(公告)号：US08096048B2
公开(公告)日：2012-01-17
申请号：US12849168
申请日：2010-08-03
申请人： Bang-Chiang Lan , Ming-I Wang , Li-Hsun Ho , Hui-Min Wu , Min Chen , Chien-Hsin Huang , Tzung-I Su
发明人： Bang-Chiang Lan , Ming-I Wang , Li-Hsun Ho , Hui-Min Wu , Min Chen , Chien-Hsin Huang , Tzung-I Su
IPC分类号： B81C1/00
CPC分类号： B81C1/00246 , B81C2203/0714 , B81C2203/0742 , Y10T29/41 , Y10T29/49155
摘要： A method for fabricating a MEMS is described as follows. A substrate is provided, including a circuit region and a MEMS region separated from each other. A first metal interconnection structure is formed on the substrate in the circuit region, and simultaneously a first dielectric structure is formed on the substrate in the MEMS region. A second metal interconnection structure is formed on the first metal interconnection structure, and simultaneously a second dielectric structure, at least two metal layers and at least one protection ring are formed on the first dielectric structure. The metal layers and the protection ring are formed in the second dielectric structure and the protection ring connects two adjacent metal layers to define an enclosed space between two adjacent metal layers. The first dielectric structure and the second dielectric structure outside the enclosed space are removed to form a MEMS device in the MEMS region.
摘要翻译： MEMS的制造方法如下所述。提供了包括彼此分离的电路区域和MEMS区域的衬底。第一金属互连结构形成在电路区域中的衬底上，并且同时在MEMS区域中的衬底上形成第一电介质结构。第二金属互连结构形成在第一金属互连结构上，并且同时具有第二电介质结构，至少两个金属层和至少一个保护环形成在第一电介质结构上。金属层和保护环形成在第二电介质结构中，并且保护环连接两个相邻的金属层以限定两个相邻金属层之间的封闭空间。去除封闭空间外部的第一电介质结构和第二电介质结构，以在MEMS区域中形成MEMS器件。

18. 发明申请

US20110131893A1 Adjustable jack post 有权
标题翻译：可调节千斤顶柱
公开(公告)号：US20110131893A1
公开(公告)日：2011-06-09
申请号：US12592844
申请日：2009-12-04
申请人： Min Chen
发明人： Min Chen
IPC分类号： E04G25/04
CPC分类号： E04G25/04 , E04G25/06 , E04G25/065
摘要： The post is adjustable in length as required. The post can be adjusted at any time during and after construction. The post can be used as an extension of a column which need in adjust in length. The post can be used as a jack. The post can withstand compression, tension, and dynamic load. The post can be used to provide support to the beams and girder in house frame.
摘要翻译：该柱可根据需要调整长度。该岗位可以在施工期间和施工后随时调整。该柱可用作需要调整长度的柱的延伸。该帖子可以用作插孔。该柱可以承受压缩，张力和动态载荷。该柱可用于在框架内为梁和梁提供支撑。

19. 发明申请

US20110084394A1 Semiconductor Structure 有权
标题翻译：半导体结构
公开(公告)号：US20110084394A1
公开(公告)日：2011-04-14
申请号：US12577734
申请日：2009-10-13
申请人： Hui-Min Wu , Bang-Chiang Lan , Ming-I Wang , Tzung-I Su , Chien-Hsin Huang , Chao-An Su , Tzung-Han Tan , Min Chen , Meng-Jia Lin
发明人： Hui-Min Wu , Bang-Chiang Lan , Ming-I Wang , Tzung-I Su , Chien-Hsin Huang , Chao-An Su , Tzung-Han Tan , Min Chen , Meng-Jia Lin
IPC分类号： H01L23/485
CPC分类号： H01L24/05 , B81B7/0006 , B81B2207/015 , B81C2203/0714 , H01L23/562 , H01L2224/05093 , H01L2224/05556 , H01L2224/05624 , H01L2224/05647 , H01L2224/05684 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01033 , H01L2924/01072 , H01L2924/01074 , H01L2924/01082 , H01L2924/1461 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor structure is provided. The semiconductor structure includes a substrate, a dielectric layer, a pad structure and a protection structure. The dielectric layer is disposed on the substrate. The pad structure is disposed in the dielectric layer. The pad structure includes a plurality of first metal layers and a plurality of plugs which are electrically connected to each other vertically. There is no contact plug disposed between the pad structure and the substrate. The protection structure is disposed in the dielectric layer and encompasses the pad structure.
摘要翻译：提供半导体结构。半导体结构包括衬底，电介质层，衬垫结构和保护结构。电介质层设置在基板上。焊盘结构设置在电介质层中。垫结构包括多个第一金属层和多个彼此垂直电连接的插塞。在衬垫结构和衬底之间没有设置接触插头。保护结构设置在电介质层中并且包围衬垫结构。

20. 发明申请

US20110084344A1 MEMS DEVICE WITH A COMPOSITE BACK PLATE ELECTRODE AND METHOD OF MAKING THE SAME 审中-公开
标题翻译：具有复合背板电极的MEMS器件及其制造方法
公开(公告)号：US20110084344A1
公开(公告)日：2011-04-14
申请号：US12579395
申请日：2009-10-14
申请人： Chien-Hsin Huang , Bang-Chiang Lan , Ming-I Wang , Hui-Min Wu , Tzung-I Su , Chao-An Su , Tzung-Han Tan , Min Chen , Meng-Jia Lin
发明人： Chien-Hsin Huang , Bang-Chiang Lan , Ming-I Wang , Hui-Min Wu , Tzung-I Su , Chao-An Su , Tzung-Han Tan , Min Chen , Meng-Jia Lin
IPC分类号： H01L29/84 , H01L21/30
CPC分类号： B81C1/00801 , B81B2201/0257 , B81B2207/015 , B81C2201/014 , B81C2203/0735
摘要： A method of fabricating MEMS device includes: providing a substrate with a first surface and a second surface. The substrate includes at least one logic region and at least one MEMS region. The logic region includes at least one logic device positioned on the first surface of the substrate. Then, an interlayer material is formed on the first surface of the substrate within the MEMS region. Finally, the second surface of the substrate within the MEMS region is patterned. After the pattern process, a vent pattern is formed in the second surface of the substrate within the MEMS region. The interlayer material does not react with halogen radicals. Therefore, during the formation of the vent pattern, the substrate is protected by the interlayer material and the substrate can be prevented from forming any undercut.
摘要翻译：一种制造MEMS器件的方法包括：向基片提供第一表面和第二表面。衬底包括至少一个逻辑区域和至少一个MEMS区域。逻辑区域包括位于衬底的第一表面上的至少一个逻辑器件。然后，在MEMS区域内的衬底的第一表面上形成中间层材料。最后，对MEMS区域内的衬底的第二表面进行图案化。在图案处理之后，在MEMS区域内的衬底的第二表面中形成通气图案。中间层材料不与卤素原子反应。因此，在形成通气图案的过程中，基板被中间层材料保护，并且可以防止基板形成任何底切。

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