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11. 发明授权

US08514166B2 LCD backlight dimming, LCD/image signal compensation and method of controlling an LCD display 有权
标题翻译： LCD背光调光，LCD /图像信号补偿及LCD显示控制方法
公开(公告)号：US08514166B2
公开(公告)日：2013-08-20
申请号：US12129305
申请日：2008-05-29
申请人： Min Chen , Huajun Peng , Guoping Qiu , Chun Kit Hung , Wei Zhang
发明人： Min Chen , Huajun Peng , Guoping Qiu , Chun Kit Hung , Wei Zhang
IPC分类号： G09G3/36
CPC分类号： G09G3/3611 , G09G3/3406 , G09G2320/0646 , G09G2330/021 , G09G2360/16
摘要： A method of reducing power consumption in a liquid crystal display illuminated by a backlight device includes dimming the backlight and adjusting the intensity of the image to compensate for the dimmed backlight. A dimming factor for the backlight is based on a clipping point determining from the pixel intensity distribution of the image signal. The intensity of the image is adjusted based on the dimming factor, wherein a first tone mapping function is used to adjust pixel intensities below an intensity threshold and a second tone mapping function is used to adjust pixel intensities above the intensity threshold.
摘要翻译：一种降低由背光装置照亮的液晶显示器中的功耗的方法包括使背光调光并调节图像的强度以补偿暗淡的背光。用于背光的调光因子基于根据图像信号的像素强度分布确定的剪切点。基于调光因子调整图像的强度，其中使用第一色调映射函数来调整低于强度阈值的像素强度，并且使用第二色调映射函数来调整高于强度阈值的像素强度。

12. 发明授权

US08384214B2 Semiconductor structure, pad structure and protection structure 有权
标题翻译：半导体结构，焊盘结构和保护结构
公开(公告)号：US08384214B2
公开(公告)日：2013-02-26
申请号：US12577734
申请日：2009-10-13
申请人： Hui-Min Wu , Bang-Chiang Lan , Ming-I Wang , Tzung-I Su , Chien-Hsin Huang , Chao-An Su , Tzung-Han Tan , Min Chen , Meng-Jia Lin
发明人： Hui-Min Wu , Bang-Chiang Lan , Ming-I Wang , Tzung-I Su , Chien-Hsin Huang , Chao-An Su , Tzung-Han Tan , Min Chen , Meng-Jia Lin
IPC分类号： H01L31/00 , H01L23/02 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L24/05 , B81B7/0006 , B81B2207/015 , B81C2203/0714 , H01L23/562 , H01L2224/05093 , H01L2224/05556 , H01L2224/05624 , H01L2224/05647 , H01L2224/05684 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01033 , H01L2924/01072 , H01L2924/01074 , H01L2924/01082 , H01L2924/1461 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor structure is provided. The semiconductor structure includes a substrate, a dielectric layer, a pad structure and a protection structure. The dielectric layer is disposed on the substrate. The pad structure is disposed in the dielectric layer. The pad structure includes a plurality of first metal layers and a plurality of plugs which are electrically connected to each other vertically. There is no contact plug disposed between the pad structure and the substrate. The protection structure is disposed in the dielectric layer and encompasses the pad structure.
摘要翻译：提供半导体结构。半导体结构包括衬底，电介质层，衬垫结构和保护结构。电介质层设置在基板上。焊盘结构设置在电介质层中。垫结构包括多个第一金属层和多个彼此垂直电连接的插塞。在衬垫结构和衬底之间没有设置接触插头。保护结构设置在电介质层中并且包围衬垫结构。

13. 发明授权

US08217840B2 Dual-band antenna assembly 有权
标题翻译：双频天线组合
公开(公告)号：US08217840B2
公开(公告)日：2012-07-10
申请号：US12627014
申请日：2009-11-30
申请人： Min Chen , Cho-Ju Chung
发明人： Min Chen , Cho-Ju Chung
IPC分类号： H01Q1/38
CPC分类号： H01Q1/38 , H01Q5/40 , H01Q9/0407 , H01Q9/42 , H01Q21/30
摘要： A dual-band antenna assembly is positioned on a substrate, and includes an insulation body, a plane antenna and a microstrip antenna. The insulation body includes a plane surface paralleled to the substrate, and a side surface perpendicularly extending from edges of the plane surface to the substrate. The plane antenna includes a first feed portion and a first radiator. The first feed portion passes through the substrate to the plane surface of the insulation body. The first radiator is substantially positioned on a center of the plane surface of the insulation body, and electrically connected to the first feed portion. The microstrip antenna includes a second feed portion and a second radiator. The second radiator is a microstrip, electrically connected to the second feed portion and positioned on the side surface of the insulation body.
摘要翻译：双频天线组件位于基板上，并且包括绝缘体，平面天线和微带天线。绝缘体包括与基板平行的平面，以及从平面的边缘垂直延伸到基板的侧面。平面天线包括第一馈送部分和第一辐射器。第一进料部分穿过基材到绝缘体的平面。第一散热器基本上位于绝缘体的平面表面的中心，并且电连接到第一馈送部分。微带天线包括第二馈电部分和第二辐射器。第二散热器是微带，电连接到第二馈电部分并且位于绝缘体的侧表面上。

14. 发明授权

US08208768B2 Focusing member and optoelectronic device 有权
标题翻译：聚焦构件和光电器件
公开(公告)号：US08208768B2
公开(公告)日：2012-06-26
申请号：US12605891
申请日：2009-10-26
申请人： Tzung-I Su , Ming-I Wang , Bang-Chiang Lan , Te-Kan Liao , Chao-An Su , Hui-Min Wu , Chien-Hsin Huang , Tzung-Han Tan , Min Chen , Meng-Jia Lin
发明人： Tzung-I Su , Ming-I Wang , Bang-Chiang Lan , Te-Kan Liao , Chao-An Su , Hui-Min Wu , Chien-Hsin Huang , Tzung-Han Tan , Min Chen , Meng-Jia Lin
IPC分类号： G02B6/12
CPC分类号： G02B6/12004 , G02B6/305
摘要： A focusing member and an optoelectronic device having the same are provided. The focusing member includes multiple levels of conductive plugs and multiple levels of conductive layers that together form an inversed half-boat shape. The optoelectronic device includes a bottom layer, an optical waveguide above the bottom layer, a dielectric layer covering the optical waveguide, and the above focusing member disposed at an edge of the optoelectronic device and located in the dielectric layer above the optical waveguide. A wider end of the inversed half-boat shape of the focusing member faces the outside of the optoelectronic device. The refractive indexes of the bottom layer and the dielectric layer are smaller than that of the optical waveguide.
摘要翻译：提供聚焦构件和具有该聚焦构件的光电子器件。聚焦构件包括多个级别的导电插塞和多层导电层，这些导电层一起形成反转的半舟形状。光电子器件包括底层，底层上方的光波导，覆盖光波导的电介质层，以及设置在光电子器件的边缘并位于光波导上方的电介质层中的上述聚焦构件。聚焦构件的反转半舟形的较宽端面向光电器件的外侧。底层和电介质层的折射率小于光波导的折射率。

15. 发明授权

US08089209B2 Electrodless globe florescent lamp with high luminant efficiency 失效
标题翻译：无光地球荧光灯具有高亮度效率
公开(公告)号：US08089209B2
公开(公告)日：2012-01-03
申请号：US12482085
申请日：2009-06-10
申请人： Min Chen
发明人： Min Chen
IPC分类号： H01J17/16 , H01J17/49 , H01J17/04
CPC分类号： H01J65/048 , H01J61/10
摘要： The present invention comprises a globe shield and an inner disposed inside the shield, between which a low-pressured plasmic arc discharging zone is enclosed. Further, a glass division device near the inner in the discharging zone is coated with fluorescent powder on the surface thereof and is formed by glass or sheet glass having at least one opening defined on the glass to ensure the passage of air. The present invention advantages preferable ruminant efficiency as 15 to 20% higher as that of the conventional products, increasing the thermal resistance between the high-temperature circular discharging zone of the plasmic arc and the power coupler to decrease the heat generated by the corresponding radiation conduction for the inner, so that a large power is enabled by the present invention, accomplishing a performance of 200-300 W of the lighting power, and attaining a 75-85 Lm/W of the ruminant efficiency.
摘要翻译：本发明包括一个屏蔽罩和一个设置在屏蔽内部的内部，在其间封装一个低压等离子体电弧放电区。此外，在排出区内部附近的玻璃分割装置在其表面上涂覆有荧光粉，并由玻璃或玻璃板形成，玻璃或玻璃板具有限定在玻璃上的至少一个开口，以确保空气通过。本发明优选的反刍动物效率优于常规产品的15-20％，提高了等离子体电弧的高温环形放电区与功率耦合器之间的热阻，从而减少了相应辐射传导产生的热量对于内部，通过本发明能够实现大功率，实现200-300W的照明功率的性能，并获得75-85Lm / W的反刍动物效率。

16. 发明申请

US20110234612A1 ADJUSTING A BRIGHTNESS LEVEL OF A DISPLAY DEVICE 有权
标题翻译：调整显示设备的亮度级别
公开(公告)号：US20110234612A1
公开(公告)日：2011-09-29
申请号：US12748222
申请日：2010-03-26
申请人： Zhang Wei , Min Chen , Tsai Chen Jung
发明人： Zhang Wei , Min Chen , Tsai Chen Jung
IPC分类号： G09G5/02 , G09G5/10
CPC分类号： G09G3/3426 , G09G2320/0646 , G09G2360/144 , G09G2360/16
摘要： Embodiments of methods, systems, or apparatuses relating to adjusting a brightness level of at least a portion of a backlight of a display device based, at least in part, on one or more measurements of ambient light values.
摘要翻译：至少部分地基于对环境光值的一个或多个测量值来调整与显示装置的背光源的至少一部分的亮度水平相关的方法，系统或装置的实施例。

17. 外观设计

USD643401S1 Network multimedia player 有权
标题翻译：网络多媒体播放器
公开(公告)号：USD643401S1
公开(公告)日：2011-08-16
申请号：US29376940
申请日：2010-10-14
申请人： Min Chen , Dan Hu
设计人： Min Chen , Dan Hu

18. 发明申请

US20110158582A1 STRUCTURE OF A SEMICONDUCTOR DEVICE HAVING A WAVEGUIDE AND METHOD OF FORMING THE SAME 审中-公开
标题翻译：具有波导的半导体器件的结构及其形成方法
公开(公告)号：US20110158582A1
公开(公告)日：2011-06-30
申请号：US12649337
申请日：2009-12-30
申请人： Tzung-I Su , Ming-I Wang , Bang-Chiang Lan , Te-Kan Liao , Chao-An Su , Chien-Hsin Huang , Hui-Min Wu , Tzung-Han Tan , Min Chen , Meng-Jia Lin
发明人： Tzung-I Su , Ming-I Wang , Bang-Chiang Lan , Te-Kan Liao , Chao-An Su , Chien-Hsin Huang , Hui-Min Wu , Tzung-Han Tan , Min Chen , Meng-Jia Lin
IPC分类号： G02B6/122 , G02B6/136 , H01L21/70
CPC分类号： H01L29/78 , G02B6/131 , G02B6/136
摘要： A method of forming the structure of the semiconductor device having a waveguide. Firstly, a SOI substrate including a bulk silicon, an insulating layer, and a silicon layer is provided and a device region and a waveguide region are defined on the SOI substrate. Afterwards, a protection layer and a patterned shielding layer are formed to cover the waveguide region and expose the device region. Subsequently, a recess is formed by etching the protection layer, the silicon layer and the insulating layer and thereby the bulk silicon is exposed. After that, an epitaxial silicon layer is formed in the recess and a semiconductor device is subsequently formed on the epitaxial silicon layer. Also, the present invention conquers the poor electrical performance of the semiconductor device integrated into the SOI substrate.
摘要翻译：一种形成具有波导的半导体器件的结构的方法。首先，提供包括体硅，绝缘层和硅层的SOI衬底，并且在SOI衬底上限定器件区域和波导区域。之后，形成保护层和图案化屏蔽层以覆盖波导区域并暴露设备区域。随后，通过蚀刻保护层，硅层和绝缘层，从而暴露体硅，形成凹部。之后，在凹槽中形成外延硅层，随后在外延硅层上形成半导体器件。此外，本发明还涉及集成到SOI衬底中的半导体器件的差的电性能。

19. 发明申请

US20110115039A1 MEMS STRUCTURE AND METHOD FOR MAKING THE SAME 有权
标题翻译： MEMS结构及其制造方法
公开(公告)号：US20110115039A1
公开(公告)日：2011-05-19
申请号：US12621526
申请日：2009-11-19
申请人： Chien-Hsin Huang , Bang-Chiang Lan , Ming-I Wang , Hui-Min Wu , Tzung-I Su , Chao-An Su , Tzung-Han Tan , Min Chen , Meng-Jia Lin
发明人： Chien-Hsin Huang , Bang-Chiang Lan , Ming-I Wang , Hui-Min Wu , Tzung-I Su , Chao-An Su , Tzung-Han Tan , Min Chen , Meng-Jia Lin
IPC分类号： H01L29/84 , H01L21/02
CPC分类号： H04R19/005 , B81B3/0072 , B81B2201/0221 , B81B2201/0257 , B81B2203/0127 , H01L29/84
摘要： A micro electro mechanical system (MEMS) structure is disclosed. The MEMS structure includes a backplate electrode and a 3D diaphragm electrode. The 3D diaphragm electrode has a composite structure so that a dielectric is disposed between two metal layers. The 3D diaphragm electrode is adjacent to the backplate electrode to form a variable capacitor together.
摘要翻译：公开了一种微机电系统（MEMS）结构。 MEMS结构包括背板电极和3D隔膜电极。 3D隔膜电极具有复合结构，使得电介质设置在两个金属层之间。 3D隔膜电极与背板电极相邻，以形成可变电容器。

20. 发明申请

US20110068374A1 INTEGRATED CIRCUIT HAVING MICROELECTROMECHANICAL SYSTEM DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：具有微电子机电系统装置的集成电路及其制造方法
公开(公告)号：US20110068374A1
公开(公告)日：2011-03-24
申请号：US12565154
申请日：2009-09-23
申请人： Tzung-Han Tan , Bang-Chiang Lan , Ming-I Wang , Tzung-I Su , Chien-Hsin Huang , Hui-Min Wu , Chao-An Su , Min Chen , Meng-Jia Lin
发明人： Tzung-Han Tan , Bang-Chiang Lan , Ming-I Wang , Tzung-I Su , Chien-Hsin Huang , Hui-Min Wu , Chao-An Su , Min Chen , Meng-Jia Lin
IPC分类号： H01L29/84 , H01L21/30
CPC分类号： B81C1/00238
摘要： An integrated circuit (IC) having a microelectromechanical system (MEMS) device buried therein is provided. The integrated circuit includes a substrate, a metal-oxide semiconductor (MOS) device, a metal interconnect, and the MEMS device. The substrate has a logic circuit region and a MEMS region. The MOS device is located on the logic circuit region of the substrate. The metal interconnect, formed by a plurality of levels of wires and a plurality of vias, is located above the substrate to connect the MOS device. The MEMS device is located on the MEMS region, and includes a sandwich membrane located between any two neighboring levels of wires in the metal interconnect and connected to the metal interconnect.
摘要翻译：提供了一种其中埋有微机电系统（MEMS）器件的集成电路（IC）。集成电路包括衬底，金属氧化物半导体（MOS）器件，金属互连和MEMS器件。衬底具有逻辑电路区域和MEMS区域。 MOS器件位于衬底的逻辑电路区域上。由多层电线形成的金属互连和多个通孔位于衬底上方以连接MOS器件。 MEMS器件位于MEMS区域上，并且包括位于金属互连中的任何两个相邻电平线之间并连接到金属互连的夹层膜。

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