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11. 发明授权

US5229569A Laser machining apparatus and method of the same 失效
标题翻译：激光加工设备及其相关方法
公开(公告)号：US5229569A
公开(公告)日：1993-07-20
申请号：US707608
申请日：1991-05-30
申请人： Tateoki Miyauchi , Shigenobu Maruyama , Katsurou Mizukoshi , Mikio Hongo , Koyo Morita , Kaoru Katayama , Minoru Suzuki , Kazuo Mera , Haruhisa Sakamoto
发明人： Tateoki Miyauchi , Shigenobu Maruyama , Katsurou Mizukoshi , Mikio Hongo , Koyo Morita , Kaoru Katayama , Minoru Suzuki , Kazuo Mera , Haruhisa Sakamoto
IPC分类号： B23K26/03
CPC分类号： B23K26/032
摘要： A laser machining apparatus includes a laser beam source, such as of excimer laser, which produces a laser beam to be projected on a work piece or a sample, first and second illumination light sources which have wavelengths substantially equal to the wavelength of the laser beam and illuminate the entire image and the laser beam, respectively, a first beam splitter which guides the image produced by the illumination light to an observation unit, a second beam splitter which guides the laser beam from the laser beam source to an objective lens, and a controller which controls the machining condition including the relative positioning between the sample and the laser beam depending on the result of observation. The laser beam guide path structure from the laser beam source to the sample has its interior wall made of laser-transparent material such as glass, and the transparent material is enclosed by a laser blocking material such as a metal or water.

12. 发明授权

US5086015A Method of etching a semiconductor device by an ion beam 失效
标题翻译：通过离子束蚀刻半导体器件的方法
公开(公告)号：US5086015A
公开(公告)日：1992-02-04
申请号：US394364
申请日：1989-08-15
申请人： Fumikazu Itoh , Akira Shimase , Satoshi Haraichi , Takahiko Takahashi , Mikio Hongo
发明人： Fumikazu Itoh , Akira Shimase , Satoshi Haraichi , Takahiko Takahashi , Mikio Hongo
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/3205 , H01L21/768
CPC分类号： H01L21/76802 , Y10S148/046
摘要： A method of etching a semiconductor device having multi-layered wiring by an ion beam is disclosed which method comprises the steps of: extracting a high-intensity ion beam from a high-density ion source; focusing the extracted ion beam; causing the focused ion beam to perform a scanning operation by a voltage applied to a deflection electrode; forming a first hole in the semiconductor device by the focused ion beam to a depth capable of reaching an insulating film formed between upper and lower wiring conductors so that the first hole has a curved bottom corresponding to the undulation of the upper wiring conductor, and the upper wiring conductor is absent at the bottom of the first hole; and scanning a portion of the bottom of the first hole with the focused ion beam to form a second hole in the insulating film to a depth capable of reaching the lower wiring conductor, thereby preventing the shorting between the upper and lower wiring conductors. Further, a method of forming a hole of a predetermined shape at a surface area having a step-like portion of a semiconductor device by an ion beam is disclosed which method comprises a pre-etching step of scanning the high-level region of the step-like portion with the ion beam so that the high-level region becomes equal in level to the low-level region of the step-like portion, and a main step of scanning the whole of the surface area with the ion beam till the hole of the predetermined shape is formed in the semiconductor device.
摘要翻译：公开了一种通过离子束蚀刻具有多层布线的半导体器件的方法，该方法包括以下步骤：从高密度离子源提取高强度离子束; 聚焦提取的离子束; 使聚焦离子束通过施加到偏转电极的电压进行扫描操作; 通过所述聚焦离子束在所述半导体器件中形成第一孔至能够到达形成在上部和下部布线导体之间的绝缘膜的深度，使得所述第一孔具有对应于所述上部布线导体的起伏的弯曲底部，并且上部布线导体在第一个孔的底部不存在; 并用聚焦离子束扫描第一孔的底部的一部分，以在绝缘膜中形成能够到达下布线导体的深度的第二孔，从而防止上布线导体和下布线导体之间的短路。此外，公开了一种通过离子束在具有半导体器件的阶梯状部分的表面区域形成预定形状的孔的方法，该方法包括：扫描步骤的高级区域的预蚀刻步骤具有离子束的部分，使得高级区域变得与阶梯状部分的低级区域相等，并且主要步骤是用离子束扫描整个表面积直到孔在半导体器件中形成预定形状。

13. 发明授权

US4795720A Method for producing semiconductor devices and cutting fuses 失效
标题翻译：制造半导体器件和切断保险丝的方法
公开(公告)号：US4795720A
公开(公告)日：1989-01-03
申请号：US96778
申请日：1987-09-14
申请人： Takao Kawanabe , Morio Inoue , Mikio Hongo
发明人： Takao Kawanabe , Morio Inoue , Mikio Hongo
IPC分类号： H01L27/10 , H01L21/768 , H01L21/82 , H01L23/525 , H01L21/465 , H01L21/473
CPC分类号： H01L23/5258 , H01L2924/0002 , Y10S438/94 , Y10S438/958
摘要： Herein disclosed are a method of producing a semiconductor device. Especially in a device constructed to have a defective circuit replaced by a redundant circuit, after a fuse is cut by exposure to a laser beam, a portion to be fused is irradiated in a predetermined gas atmosphere with an optical ray to selectively form a CVD film thereby to form a protection film over the fuse so that the formation of the protection film is simplified after the fuse is cut, whereby any rise in the production cost is suppressed while improving the production yield and reliability.
摘要翻译：这里公开的是制造半导体器件的方法。特别是在被构造成具有由冗余电路取代的有缺陷的电路的器件中，在通过暴露于激光束切断熔丝之后，将要熔化的部分在预定的气体气氛中用光线照射以选择性地形成CVD膜从而在保险丝上形成保护膜，从而在保险丝切断之后简化保护膜的形成，从而在提高生产成品率和可靠性的同时抑制生产成本的上升。

14. 发明授权

US4581628A Circuit programming by use of an electrically conductive light shield 失效
标题翻译：使用导电灯罩进行电路编程
公开(公告)号：US4581628A
公开(公告)日：1986-04-08
申请号：US424370
申请日：1982-09-27
申请人： Tateoki Miyauchi , Mikio Hongo , Masao Mitani , Isao Tanabe , Toshiaki Masuhara
发明人： Tateoki Miyauchi , Mikio Hongo , Masao Mitani , Isao Tanabe , Toshiaki Masuhara
IPC分类号： H01L21/3205 , H01L21/00 , H01L21/82 , H01L23/52 , H01L23/525 , H01L23/552 , H01L27/10 , H01L23/48 , H01L29/04
CPC分类号： H01L21/82 , H01L23/525 , H01L23/5254 , H01L23/552 , H01L2924/0002
摘要： The present invention consists in a semiconductor integrated circuit device characterized in that a circuit programming wiring layer is formed on an insulating film which is provided on a semiconductor substrate, and that a light shielding protective mask material is deposited around the circuit programming wiring layer except a program part thereof, through an insulating film.
摘要翻译：本发明是一种半导体集成电路器件，其特征在于，在设置在半导体衬底上的绝缘膜上形成电路编程布线层，并且在电路编程布线层周围沉积遮光保护掩模材料，除了程序部分，通过绝缘膜。

15. 发明授权

US4190759A Processing of photomask 失效
标题翻译：光掩模加工
公开(公告)号：US4190759A
公开(公告)日：1980-02-26
申请号：US922369
申请日：1978-07-06
申请人： Mikio Hongo , Junichi Nakabayashi
发明人： Mikio Hongo , Junichi Nakabayashi
IPC分类号： B23K26/08 , G03F1/72 , H05K3/00 , H05K3/02 , H05K3/22 , B23K9/00
CPC分类号： B23K26/0063 , B23K26/082 , B23K26/0853 , G03F1/72 , H05K3/0002 , H05K3/027 , H05K3/225
摘要： A laser beam of a pulse width 10 to 20 nanoseconds is irradiated and scanned relatively and two-dimensionally on a metal thin film formed on a transparent substrate from the transparent substrate side and through the transparent substrate with a superposition number of laser beam spots set up to at most 15 and to thereby remove a predetermined region of the metal thin film. The irradiated metal film begins to melt from the substrate side and is removed away explosively from the substrate, leaving the substrate substantially unaffected.
摘要翻译：将脉冲宽度为10〜20纳秒的激光束从透明基板侧在透明基板上形成的金属薄膜上相对二维地进行二维扫描，并通过透明基板以叠加数量的激光束点设置至多15°，从而去除金属薄膜的预定区域。被照射的金属膜从基板侧开始熔化，并从基板上被爆炸地移走，留下基板基本上不受影响。

16. 发明授权

US07834353B2 Method of manufacturing display device 有权
标题翻译：显示装置的制造方法
公开(公告)号：US07834353B2
公开(公告)日：2010-11-16
申请号：US12021714
申请日：2008-01-29
申请人： Mikio Hongo , Sachio Uto , Mineo Nomoto , Toshihiko Nakata , Mutsuko Hatano , Shinya Yamaguchi , Makoto Ohkura
发明人： Mikio Hongo , Sachio Uto , Mineo Nomoto , Toshihiko Nakata , Mutsuko Hatano , Shinya Yamaguchi , Makoto Ohkura
IPC分类号： H01L31/0376 , H01L21/00
CPC分类号： H01L29/04 , B23K26/0622 , B23K26/064 , B23K26/0648 , B23K26/066 , B23K26/0665 , B23K26/0732 , H01L21/02422 , H01L21/02532 , H01L21/02678 , H01L21/02683 , H01L21/268 , H01L27/1285 , H01L27/1296 , H01L29/66757 , H01L29/78675
摘要： A TFT device having a pixel portion and a driving circuit portion formed on a glass substrate; wherein at least the active layer (active region) of a transistor constituting said driving circuit comprises polycrystalline silicon including crystals that do not have crystal grain boundaries which cross the direction of current flow.
摘要翻译：一种具有形成在玻璃基板上的像素部分和驱动电路部分的TFT器件; 其中构成所述驱动电路的晶体管的至少有源层（有源区）包括多晶硅，其包括不具有与电流流动方向交叉的晶界的晶体。

17. 发明授权

US07732268B2 Manufacturing method of display device 有权
标题翻译：显示装置的制造方法
公开(公告)号：US07732268B2
公开(公告)日：2010-06-08
申请号：US11882828
申请日：2007-08-06
申请人： Hideaki Shimmoto , Mikio Hongo , Akio Yazaki , Takeshi Noda , Takuo Kaitoh
发明人： Hideaki Shimmoto , Mikio Hongo , Akio Yazaki , Takeshi Noda , Takuo Kaitoh
IPC分类号： H01L21/00
CPC分类号： H01L21/02532 , H01L21/02683 , H01L21/02691 , H01L27/1285
摘要： A method of manufacturing a display device to improve the quality of a polycrystal silicon upon dehydrogenating and polycrystallizing an amorphous silicon at the outside of a display region of a substrate, by forming a plurality of pixels having TFT devices using an amorphous silicon in the display region of the substrate, and forming a plurality of driving circuits having semiconductor devices using a polycrystal silicon at the outside of the display region, the method including irradiation of a first continuous oscillation laser only to the amorphous silicon in the region for forming the driving circuit and the peripheral region thereof to conduct dehydrogenation and then irradiation of a second continuous oscillation region only to the dehydrogenated region to polycrystallize the amorphous silicon, wherein the region to which the first continuous oscillation laser is irradiated is wider than the region to which the second continuous oscillation laser is irradiated.
摘要翻译：一种制造显示装置的方法，通过在显示区域中形成具有使用非晶硅的TFT器件的多个像素，从而在衬底的显示区域的外侧使非晶硅脱氢和多晶化时提高多晶硅的质量并且在显示区域的外部形成具有使用多晶硅的半导体器件的多个驱动电路，该方法包括仅在用于形成驱动电路的区域中的非晶硅上照射第一连续振荡激光，以及其周边区域进行脱氢，然后仅将第二连续振荡区域照射到脱氢区域以将非晶硅多晶化，其中第一连续振荡激光器照射的区域比第二连续振荡区域激光被照射。

18. 发明授权

US07723135B2 Manufacturing method of display device 有权
标题翻译：显示装置的制造方法
公开(公告)号：US07723135B2
公开(公告)日：2010-05-25
申请号：US12022201
申请日：2008-01-30
申请人： Akio Yazaki , Mikio Hongo , Takeshi Sato , Takahiro Kamo
发明人： Akio Yazaki , Mikio Hongo , Takeshi Sato , Takahiro Kamo
IPC分类号： H01L21/00
CPC分类号： H01L21/02691 , B23K26/032 , H01L21/02532 , H01L21/02678 , H01L21/02683 , H01L21/02686 , H01L27/1214 , H01L27/1285
摘要： In crystallization of a silicon film by annealing with a linear-shaped laser beam having an ununiform width of the short axis of the beam, the profile (intensity distribution) of the laser beam is evaluated, and the result is fed back to an oscillating condition of the laser beam or an optical condition which projects this onto the silicon film, whereby a display device comprising a high-quality crystalline silicon film is produced. In the present invention, (1) the energy distribution of the linear-shaped laser beam is measured by a detector type CCD camera moved stepwise in the directions that its long axis and short axis extend, respectively, (2) a value obtained by dividing an accumulated intensity E in the long axis direction obtained by accumulating the detected signals in a direction parallel to the short axis by the square root of the width W of the short axis of the linear-shaped laser beam in each position in the long axis: E/√{square root over ( )}(W), is determined in all the positions of a cross section of the linear-shaped laser beam. Since a laser power which is suitable for lateral crystal growth of the silicon film has a close correlation with E/√{square root over ( )}(W), this value is used as an evaluation result mentioned above in the present invention.
摘要翻译：在用具有不均匀宽度的光束的线形激光束退火的硅膜的结晶中，评估激光束的轮廓（强度分布），并将结果反馈到振荡条件的激光束或将其投影到硅膜上的光学条件，由此产生包括高质量结晶硅膜的显示装置。在本发明中，（1）线状激光的能量分布通过分别沿其长轴和短轴延伸的方向逐步移动的检测器型CCD照相机来测量，（2）通过分割获得的值通过在长轴方向的各位置上将线性激光束的短轴的宽度W的平方根累积到与短轴平行的方向上的检测信号而获得的长轴方向上的累积强度E：在线形激光束的横截面的所有位置中确定E /√{平方根超过（）}（W）。由于适合于硅膜的横向晶体生长的激光功率与E /√{平方根超过（）}（W）具有密切相关性，所以将该值用作本发明上述的评估结果。

19. 发明申请

US20080188012A1 MANUFACTURING METHOD OF DISPLAY DEVICE 有权
标题翻译：显示装置的制造方法
公开(公告)号：US20080188012A1
公开(公告)日：2008-08-07
申请号：US12022201
申请日：2008-01-30
申请人： Akio Yazaki , Mikio Hongo , Takeshi Sato , Takahiro Kamo
发明人： Akio Yazaki , Mikio Hongo , Takeshi Sato , Takahiro Kamo
IPC分类号： H01L21/66
CPC分类号： H01L21/02691 , B23K26/032 , H01L21/02532 , H01L21/02678 , H01L21/02683 , H01L21/02686 , H01L27/1214 , H01L27/1285
摘要： In crystallization of a silicon film by annealing with a linear-shaped laser beam having an ununiform width of the short axis of the beam, the profile (intensity distribution) of the laser beam is evaluated, and the result is fed back to an oscillating condition of the laser beam or an optical condition which projects this onto the silicon film, whereby a display device comprising a high-quality crystalline silicon film is produced. In the present invention, (1) the energy distribution of the linear-shaped laser beam is measured by a detector type CCD camera moved stepwise in the directions that its long axis and short axis extend, respectively, (2) a value obtained by dividing an accumulated intensity E in the long axis direction obtained by accumulating the detected signals in a direction parallel to the short axis by the square root of the width W of the short axis of the linear-shaped laser beam in each position in the long axis: E/√{square root over ( )}(W), is determined in all the positions of a cross section of the linear-shaped laser beam. Since a laser power which is suitable for lateral crystal growth of the silicon film has a close correlation with E/√{square root over ( )}(W), this value is used as an evaluation result mentioned above in the present invention.
摘要翻译：在用具有不均匀宽度的光束的线形激光束退火的硅膜的结晶中，评估激光束的轮廓（强度分布），并将结果反馈到振荡条件的激光束或将其投影到硅膜上的光学条件，由此产生包括高质量结晶硅膜的显示装置。在本发明中，（1）线状激光的能量分布通过分别沿其长轴和短轴延伸的方向逐步移动的检测器型CCD照相机来测量，（2）通过分割获得的值通过在长轴方向的各位置上将线性激光束的短轴的宽度W的平方根累积到与短轴平行的方向上的检测信号而获得的长轴方向上的累积强度E：在线性激光束的横截面的所有位置中确定E /√{（W））的平方根，由于适合于硅膜的横向晶体生长的激光功率与 E（√）（（W））的平方根，将该值用作本发明上述的评价结果。

20. 发明授权

US07193693B2 Apparatus for manufacturing flat panel display devices 有权
标题翻译：用于制造平板显示装置的装置
公开(公告)号：US07193693B2
公开(公告)日：2007-03-20
申请号：US10991482
申请日：2004-11-19
申请人： Akio Yazaki , Mikio Hongo , Mutsuko Hatano , Takeshi Noda
发明人： Akio Yazaki , Mikio Hongo , Mutsuko Hatano , Takeshi Noda
IPC分类号： G01N21/00 , G01J1/00 , B23K26/06
CPC分类号： B23K26/073 , B23K26/702 , H01L27/14625
摘要： A mechanism for always measuring the spatial intensity distribution of a laser beam and displacement of the optical axis of the laser beam is provided so that a measured signal is processed when the laser beam incident on a laser beam shaping optical element is out of a predetermined condition. The shape, diameter and incidence position of the laser beam incident on the laser beam shaping optical element are always kept in the predetermined condition by a spatial filter disposed at the position of a focal point of lenses forming a beam expander disposed in the optical axis, on the basis of a result of the signal processing.In this manner, silicon thin films uniform in crystallinity can be formed stably with a high yield on an insulating substrate which forms display panels of flat panel display devices.
摘要翻译：提供用于总是测量激光束的空间强度分布和激光束的光轴位移的机构，使得当入射到激光束整形光学元件上的激光束处于预定条件时，处理测量信号。入射到激光束整形光学元件上的激光束的形状，直径和入射位置总是通过设置在设置在光轴上的形成光束扩展器的透镜的焦点的位置处的空间滤光器保持在预定条件，基于信号处理的结果。以这种方式，可以在形成平板显示装置的显示面板的绝缘基板上以高产率稳定地形成结晶度均匀的硅薄膜。

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