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11. 发明授权

US07323350B2 Method of fabricating thin film calibration features for electron/ion beam image based metrology 失效
标题翻译：制造电子/离子束图像测量的薄膜校准特征的方法
公开(公告)号：US07323350B2
公开(公告)日：2008-01-29
申请号：US10957097
申请日：2004-09-30
申请人： Sukhbir Singh Dulay , Justin Jia-Jen Hwu , Thao John Pham
发明人： Sukhbir Singh Dulay , Justin Jia-Jen Hwu , Thao John Pham
IPC分类号： H01L21/00 , H01L23/58
CPC分类号： G11B5/3173 , G11B5/3163
摘要： A method of making and using thin film calibration features is described. To fabricate a calibration standard according to the invention raised features are first formed from an electrically conductive material with a selected atomic number. A conformal thin film layer is deposited over the exposed sidewalls of the raised features. The sidewall material is selected to have a different atomic number and is preferably an nonconductive such as silicon dioxide or alumina. After the nonconductive material deposition, a controlled directional RIE process is used to remove the insulator layer deposited on the top and bottom surface of the lines and trenches. The remaining voids between the sidewalls of the raised features are filled with a conductive material. The wafer is then planarized with chemical mechanical planarization (CMP) to expose the nonconductive sidewall material on the surface. The nonconductive sidewall material will be fine lines embedded in conductive material.
摘要翻译：描述制造和使用薄膜校准特征的方法。为了制造根据本发明的校准标准，首先由具有所选原子序数的导电材料形成凸起特征。在凸起特征的暴露的侧壁上沉积保形薄膜层。侧壁材料选择为具有不同的原子序数，并且优选为非导电性，例如二氧化硅或氧化铝。在非导电材料沉积之后，使用受控的定向RIE工艺来去除沉积在线和沟槽的顶表面和底表面上的绝缘体层。凸起特征的侧壁之间的剩余空隙填充有导电材料。然后用化学机械平面化（CMP）对晶片进行平面化，以暴露表面上的非导电侧壁材料。非导电侧壁材料将是嵌入导电材料中的细线。

12. 发明授权

US09469525B2 Modified surface for block copolymer self-assembly 有权
标题翻译：用于嵌段共聚物自组装的改性表面
公开(公告)号：US09469525B2
公开(公告)日：2016-10-18
申请号：US13018414
申请日：2011-01-31
申请人： XiaoMin Yang , Wei Hu , Zhaoning Yu , Justin Jia-Jen Hwu , Kim Yang Lee
发明人： XiaoMin Yang , Wei Hu , Zhaoning Yu , Justin Jia-Jen Hwu , Kim Yang Lee
IPC分类号： B81C1/00 , G03F7/00 , G03F7/16 , B82Y10/00 , B82Y40/00
CPC分类号： B81C1/00031 , B81C2201/0149 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/165 , Y10T428/24479
摘要： A method of self-assembling density multiplied block copolymers (BCP) structures includes applying a block copolymer (BCP) to a feature-imprinted resist layer. The BCP is thermally annealed to laterally segregate the BCP into self-assembled columns of a first polymer block surrounded by a second polymer block.
摘要翻译：自组装密度倍增嵌段共聚物（BCP）结构的方法包括将嵌段共聚物（BCP）施加到特征印记的抗蚀剂层上。 BCP被热退火以将BCP横向分离成由第二聚合物嵌段包围的第一聚合物嵌段的自组装柱。

13. 发明授权

US06929961B2 Dual function array feature for CMP process control and inspection 失效
标题翻译：用于CMP过程控制和检查的双功能阵列功能
公开(公告)号：US06929961B2
公开(公告)日：2005-08-16
申请号：US10733980
申请日：2003-12-10
申请人： Justin Jia-Jen Hwu , Thomas L. Leong
发明人： Justin Jia-Jen Hwu , Thomas L. Leong
IPC分类号： H01L21/00 , H01L23/544
CPC分类号： H01L22/34
摘要： CMP process control array groups are fabricated upon the surface of the wafer for viewing through an optical microscope. The array groups include a plurality of test arrays, where each array includes a plurality of projecting test features. Each of the projecting test features are formed with the same projecting height and have a hard upper surface layer, such as diamond-like-carbon (DLC). All of the projecting test features within an array are formed with the same diameter, and the diameter of projecting test features of a particular array differs from the diameter of projecting test features in another array. The diameters are chosen such that the DLC surface is removed in specifically designed time increments, such as 5 seconds, from array to array, where projecting test features with the DLC surface removed appear as bright white, while the arrays with test features that retain some DLC surface are significantly darker.
摘要翻译： CMP工艺控制阵列组被制造在晶片的表面上，以通过光学显微镜观察。阵列组包括多个测试阵列，其中每个阵列包括多个突出的测试特征。每个突出的测试特征形成具有相同的突出高度并且具有硬的上表面层，例如类金刚石（DLC）。阵列中的所有突出的测试特征形成为具有相同的直径，并且特定阵列的突出测试特征的直径与另一阵列中的突出测试特征的直径不同。选择直径使得DLC表面以特定设计的时间增量（例如从阵列到阵列的5秒）去除，其中去除DLC表面的突出的测试特征显示为亮白色，而具有测试特征的阵列保留一些 DLC表面明显较暗。

14. 发明申请

US20130004736A1 METHOD OF PROTECTING PATTERNED MAGNETIC MATERIALS OF A STACK 审中-公开
标题翻译：保护堆叠图案的磁性材料的方法
公开(公告)号：US20130004736A1
公开(公告)日：2013-01-03
申请号：US13173564
申请日：2011-06-30
申请人： Zhaohui Fan , Yuan Xu , Justin Jia-Jen Hwu , Koichi Wago , David Shiao-Min Kuo
发明人： Zhaohui Fan , Yuan Xu , Justin Jia-Jen Hwu , Koichi Wago , David Shiao-Min Kuo
IPC分类号： B32B3/00 , C23C16/56 , C23C16/00
CPC分类号： G11B5/8408 , C23C16/45525 , C23C16/513 , G11B5/855 , H01F41/32 , Y10T428/24802
摘要： The embodiments disclose a method of protecting patterned magnetic materials of a stack, including depositing a thin continuous film of an inert material that is inert to the magnetic materials of a patterned stack upon which the thin continuous film is being deposited and forming a thin interim interface layer from the thin continuous film to protect top and sidewall areas of non-etched higher relief magnetic islands and magnetic film etched surfaces of the patterned stack from air exposure damage and damage from contact with backfilled materials.
摘要翻译：这些实施方案公开了一种保护叠层的图案化磁性材料的方法，包括沉积惰性材料的薄连续薄膜，惰性材料对图案化叠层的磁性材料是惰性的，薄膜连续薄膜将沉积在其上并形成薄的临时界面层，以保护未蚀刻的更高的浮雕磁岛的顶部和侧壁区域以及图案化叠层的磁性膜蚀刻表面从空气暴露损坏和与回填材料接触的损坏。

15. 发明授权

US08308964B2 Planarization method for media 有权
标题翻译：媒体平面化方法
公开(公告)号：US08308964B2
公开(公告)日：2012-11-13
申请号：US12895630
申请日：2010-09-30
申请人： Yuan Xu , Wei Hu , Justin Jia-Jen Hwu , Gene Gauzner , Koichi Wago , David Shiao-Min Kuo
发明人： Yuan Xu , Wei Hu , Justin Jia-Jen Hwu , Gene Gauzner , Koichi Wago , David Shiao-Min Kuo
IPC分类号： B44C1/22
CPC分类号： G11B5/743 , B44D3/18
摘要： A planarization process may planarize a media disk that has data trenches between data features and larger servo trenches between servo features. A filler material layer is deposited on the media disk and provides step coverage of the trenches. The filler material has data recesses over the data trenches and servo recesses over the servo trenches that must be removed to produce a planar media surface. A first planarization process is used to remove the data recesses and a second planarization process is used to remove the servo recesses.
摘要翻译：平坦化处理可以平坦化在伺服特征之间具有数据特征和较大伺服沟槽之间的数据沟槽的介质盘。填充材料层沉积在介质盘上并提供沟槽的台阶覆盖。填充材料在伺服沟槽上的数据沟槽和伺服凹槽上具有必须被移除以产生平面介质表面的数据凹槽。使用第一平面化处理来去除数据凹槽，并且使用第二平面化处理来去除伺服凹部。

16. 发明授权

US07783101B2 Method and system for determining dimensions of a structure having a re-entrant profile 有权
标题翻译：用于确定具有入口轮廓的结构的尺寸的方法和系统
公开(公告)号：US07783101B2
公开(公告)日：2010-08-24
申请号：US11013613
申请日：2004-12-15
申请人： Justin Jia-Jen Hwu
发明人： Justin Jia-Jen Hwu
IPC分类号： G06K9/00
CPC分类号： G06T7/593 , G06T2207/30148
摘要： Methods and systems for determining dimensions of a structure that has a re-entrant profile are disclosed. A method includes imaging at least a portion of a top surface of the structure. Subsequently, a second portion of the structure is imaged from a plurality of perspectives. A third portion of the structure is also imaged from a plurality of perspectives. A dimension of a bottom portion of the structure is determined based on the imaging.
摘要翻译：公开了用于确定具有入口轮廓的结构的尺寸的方法和系统。一种方法包括对结构的顶表面的至少一部分进行成像。随后，结构的第二部分从多个视角成像。结构的第三部分也从多个视角成像。基于成像确定结构的底部的尺寸。

17. 发明授权

US08946835B2 Magnetic device with different planarization areas 有权
标题翻译：具有不同平面化区域的磁性装置
公开(公告)号：US08946835B2
公开(公告)日：2015-02-03
申请号：US13618691
申请日：2012-09-14
申请人： Yuan Xu , Wei Hu , Justin Jia-Jen Hwu , Gene Gauzner , Koichi Wago , David Shiao-Min Kuo
发明人： Yuan Xu , Wei Hu , Justin Jia-Jen Hwu , Gene Gauzner , Koichi Wago , David Shiao-Min Kuo
IPC分类号： H01L29/82
CPC分类号： G11B5/743 , B44D3/18
摘要： A planarization process may planarize a media disk that has data trenches between data features and larger servo trenches between servo features. A filler material layer is deposited on the media disk and provides step coverage of the trenches. The filler material has data recesses over the data trenches and servo recesses over the servo trenches that must be removed to produce a planar media surface. A first planarization process is used to remove the data recesses and a second planarization process is used to remove the servo recesses.
摘要翻译：平坦化处理可以平坦化在伺服特征之间具有数据特征和较大伺服沟槽之间的数据沟槽的介质盘。填充材料层沉积在介质盘上并提供沟槽的台阶覆盖。填充材料在伺服沟槽上的数据沟槽和伺服凹槽上具有必须被移除以产生平面介质表面的数据凹槽。使用第一平面化处理来去除数据凹槽，并且使用第二平面化处理来去除伺服凹部。

18. 发明授权

US07454828B2 Method for manufacturing a magnetic write head 有权
标题翻译：磁写头的制造方法
公开(公告)号：US07454828B2
公开(公告)日：2008-11-25
申请号：US11286076
申请日：2005-11-23
申请人： Sukhbir Singh Dulay , Justin Jia-Jen Hwu , Thao John Pham
发明人： Sukhbir Singh Dulay , Justin Jia-Jen Hwu , Thao John Pham
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/1278 , G11B5/3163 , Y10T29/49041 , Y10T29/49043 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method for measuring recession in a wafer undergoing an asymmetrical ion mill process. The method includes the formation of first and second reference features and possibly a dummy feature. The reference features are constructed such that the location of the midpoint between them is unaffected by the asymmetrical ion mill. By measuring the distance between a portion of the dummy feature and the midpoint between the reference features, the amount of recession of the dummy feature can be measured. The measurement can be used to calculate the relative location of the flare to the read sensor rear edge through overlay information. By keeping the angles of the sides of the features steep (ie. nearly parallel with the direction in which the ion mill is asymmetrical) the amount of material consumed on each of the reference features is substantially equal and the midpoint between the reference features is substantially stationary.
摘要翻译：用于测量经历不对称离子磨工艺的晶片中的凹陷的方法。该方法包括形成第一和第二参考特征以及可能的虚拟特征。参考特征被构造成使得它们之间的中点的位置不受不对称离子磨机的影响。通过测量虚拟特征的一部分与参考特征之间的中点之间的距离，可以测量虚拟特征的衰退量。该测量可用于通过覆盖信息计算耀斑与读取传感器后缘的相对位置。通过保持特征的侧面的角度陡峭（即，几乎平行于离子磨机的方向不对称），在每个参考特征上消耗的材料的量基本相等，并且参考特征之间的中点基本相等静止的

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