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    • 20. 发明授权
    • High power microwave circuit packages
    • 大功率微波电路封装
    • US4951014A
    • 1990-08-21
    • US358279
    • 1989-05-26
    • Albert C. WohlertH. Barteld Van Rees
    • Albert C. WohlertH. Barteld Van Rees
    • H05K7/14
    • H05K7/1417
    • A carrier for high power solid state devices in particular monolithic microwave integrated gallium arsenide circuits includes a dielectric carrier surface comprised of aluminum nitride having disposed over a first surface thereof, a plated ground plane conductor and having disposed over a second surface thereof a ground plane conductor disposed in selected regions of said second surface, connected to the underlying ground plane conductor by via holes. The aluminum nitride carrier provides a dielectric for transmission lines which are supported by said carrier, and a support for resistor and capacitor devices formed over said carrier by thin film techniques. A high power active device such as a FET or gallium arsenide MMIC is bonded to the selective ground plane regions of the second surface of the aluminum nitride carrier. With this approach, a separate metal carrier having separately mounted components such as resistors, capacitors, and transmission lines is eliminated. The techniqu provides improvement in thermal resistance characteristics of the microwave circuit supported by the carrier and simplifies the packaging of such devices.
    • 用于高功率固态器件,特别是单片微波集成砷化镓电路的载体包括由氮化铝构成的电介质载体表面,其上设置有第一表面,电镀接地平面导体,并在其第二表面上设置有接地平面导体 设置在所述第二表面的选定区域中,通过通孔连接到下面的接地平面导体。 氮化铝载体提供了由所述载体支撑的传输线的电介质,以及通过薄膜技术在所述载体上形成的电阻和电容器装置的支撑。 诸如FET或砷化镓MMIC的高功率有源器件被结合到氮化铝载体的第二表面的选择性接地平面区域上。 利用这种方法,消除了具有单独安装的组件如电阻器,电容器和传输线的单独的金属载体。 该技术提供了由载体支撑的微波电路的热阻特性的改进,并且简化了这种装置的封装。