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11. 发明授权

US07745313B2 Substrate release methods and apparatuses 有权
标题翻译：底物释放方法和装置
公开(公告)号：US07745313B2
公开(公告)日：2010-06-29
申请号：US12473811
申请日：2009-05-28
申请人： David Xuan-Qi Wang , Mehrdad M. Moslehi
发明人： David Xuan-Qi Wang , Mehrdad M. Moslehi
IPC分类号： H01L21/762 , H01L21/20
CPC分类号： H01L31/18 , H01L21/76259
摘要： The present disclosure relates to methods and apparatuses for fracturing or breaking a buried porous semiconductor layer to separate a 3-D thin-film semiconductor semiconductor (TFSS) substrate from a 3-D crystalline semiconductor template. The method involves forming a sacrificial porous semiconductor layer on the 3-D features of the template. A variety of techniques may be used to fracture and release the mechanically weak porous semiconductor layer without damaging the TFSS substrate layer or the template layer such as pressure variations, thermal stress generation, and mechanical bending. The methods also allow for processing three dimensional features not possible with current separation processes. Optional cleaning and final lift-off steps may be performed as part of the release step or after the release step.
摘要翻译：本公开内容涉及用于将埋入的多孔半导体层断裂或断裂以从3-D晶体半导体模板分离3-D薄膜半导体（TFSS）衬底的方法和装置。该方法包括在模板的3-D特征上形成牺牲多孔半导体层。可以使用各种技术来破坏和释放机械上的弱多孔半导体层，而不会损坏TFSS衬底层或模板层，例如压力变化，热应力产生和机械弯曲。这些方法还允许处理当前分离过程不可能的三维特征。可以在释放步骤的一部分或释放步骤之后执行可选的清洁和最终剥离步骤。

12. 发明授权

US09397250B2 Releasing apparatus for separating a semiconductor substrate from a semiconductor template 有权
标题翻译：用于从半导体模板分离半导体衬底的释放装置
公开(公告)号：US09397250B2
公开(公告)日：2016-07-19
申请号：US13463757
申请日：2012-05-03
申请人： Mehrdad M. Moslehi , David Xuan-Qi Wang , Sam Tone Tor , Karl-Josef Kramer
发明人： Mehrdad M. Moslehi , David Xuan-Qi Wang , Sam Tone Tor , Karl-Josef Kramer
IPC分类号： H01L21/20 , H01L31/18 , H01L21/67 , H01L21/683 , H01L21/762
CPC分类号： H01L31/18 , H01L21/67092 , H01L21/6835 , H01L21/6838 , H01L21/76259 , H01L2924/19042 , Y10T29/53683 , Y10T279/11
摘要： According to one embodiment, a releasing apparatus for separating a semiconductor substrate from a semiconductor template, the releasing apparatus having an enclosed pressure chamber having at least one gas inlet and at least one gas outlet. A top vacuum chuck for securing a released semiconductor substrate or semiconductor template in the enclosed pressure chamber. A bottom vacuum chuck for securing an attached semiconductor substrate and semiconductor template in the enclosed pressure chamber. A gap between the attached semiconductor substrate and semiconductor template and the top vacuum chuck allowing gas flowing through the gap to generate lifting forces on the attached semiconductor substrate and semiconductor template.
摘要翻译：根据一个实施例，一种用于从半导体模板分离半导体衬底的释放装置，所述释放装置具有封闭的压力室，其具有至少一个气体入口和至少一个气体出口。用于将释放的半导体衬底或半导体模板固定在封闭的压力室中的顶部真空吸盘。用于将附接的半导体衬底和半导体模板固定在封闭的压力室中的底部真空吸盘。附着的半导体衬底和半导体模板和顶部真空吸盘之间的间隙允许气体流过间隙以在附着的半导体衬底和半导体模板上产生提升力。

13. 发明授权

US09343299B2 Trench formation method for releasing a substrate from a semiconductor template 有权
标题翻译：用于从半导体模板释放衬底的沟槽形成方法
公开(公告)号：US09343299B2
公开(公告)日：2016-05-17
申请号：US13633723
申请日：2012-10-02
申请人： David Xuan-Qi Wang , Mehrdad M. Moslehi
发明人： David Xuan-Qi Wang , Mehrdad M. Moslehi
IPC分类号： H01L21/02 , F16L21/035
CPC分类号： H01L21/0243 , F16L21/035 , H01L21/7806 , H01L21/7813 , H01L31/00
摘要： A method is provided for fabricating a semiconductor substrate by forming a porous semiconductor layer conformally on a semiconductor template and then forming a semiconductor substrate conformally on the porous semiconductor layer. An inner trench having a depth less than the thickness of the semiconductor substrate is formed on the semiconductor substrate. An outer trench providing access to the porous semiconductor layer is formed on the semiconductor substrate and is positioned between the inner trench and the edge of the semiconductor substrate. The semiconductor substrate is then released from the semiconductor template.
摘要翻译：提供了一种通过在半导体模板上共形形成多孔半导体层然后在多孔半导体层上保形地形成半导体衬底来制造半导体衬底的方法。在半导体衬底上形成深度小于半导体衬底厚度的内沟槽。提供对多孔半导体层的访问的外部沟槽形成在半导体衬底上并且位于内部沟槽和半导体衬底的边缘之间。然后半导体衬底从半导体模板中释放。

14. 发明申请

US20130167915A1 HIGH-EFFICIENCY PHOTOVOLTAIC BACK-CONTACT SOLAR CELL STRUCTURES AND MANUFACTURING METHODS USING THREE-DIMENSIONAL SEMICONDUCTOR ABSORBERS 审中-公开
标题翻译：高效光伏反接触太阳能电池结构和使用三维半导体吸收器的制造方法
公开(公告)号：US20130167915A1
公开(公告)日：2013-07-04
申请号：US13057123
申请日：2010-12-09
申请人： Mehrdad M. Moslehi , Pawan Kapur , Karl-Josef Kramer , David Xuan-Qi Wang , Sean M. Seutter , Virenda V. Rana
发明人： Mehrdad M. Moslehi , Pawan Kapur , Karl-Josef Kramer , David Xuan-Qi Wang , Sean M. Seutter , Virenda V. Rana
IPC分类号： H01L31/0236 , H01L31/18
CPC分类号： H01L31/0236 , H01L31/0201 , H01L31/02167 , H01L31/022441 , H01L31/022458 , H01L31/02363 , H01L31/035281 , H01L31/03529 , H01L31/03921 , H01L31/056 , H01L31/068 , H01L31/0682 , H01L31/18 , H01L31/1804 , H01L31/1892 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： Back contact back junction three dimensional solar cell and methods for manufacturing are provided. The back contact back contact back junction three dimensional solar cell comprises a three-dimensional substrate. The substrate comprises a light capturing frontside surface with a passivation layer, a doped base region, and a doped backside emitter region with a polarity opposite the doped base region. A backside passivation layer is positioned on the doped backside emitter region. Backside emitter contacts and backside base contacts connected to metal interconnects and selectively formed on three-dimensional features of the backside of three-dimensional solar cell.
摘要翻译：提供背面接头三维太阳能电池及制造方法。背面接触背面接合三维太阳能电池包括三维基板。衬底包括具有钝化层的光捕获前侧表面，掺杂的基极区域和与掺杂的基极区域极性相反的掺杂的背侧发射极区域。背面钝化层位于掺杂背侧发射极区域上。连接到金属互连的背面发射极触点和背面底部触点，并且选择性地形成在三维太阳能电池的背面的三维特征上。

15. 发明授权

US08193076B2 Method for releasing a thin semiconductor substrate from a reusable template 有权
标题翻译：从可重复利用的模板中释放薄的半导体衬底的方法
公开(公告)号：US08193076B2
公开(公告)日：2012-06-05
申请号：US12826641
申请日：2010-06-29
申请人： Mehrdad M. Moslehi , David Xuan-Qi Wang , Sam Tone Tor , Karl-Josef Kramer
发明人： Mehrdad M. Moslehi , David Xuan-Qi Wang , Sam Tone Tor , Karl-Josef Kramer
IPC分类号： H01L21/20
CPC分类号： H01L31/18 , H01L21/67092 , H01L21/6835 , H01L21/6838 , H01L21/76259 , H01L2924/19042 , Y10T29/53683 , Y10T279/11
摘要： The present disclosure relates to methods and apparatuses template. The method involves forming a mechanically weak layer conformally on a semiconductor template. Then forming a thin for releasing a thin semiconductor substrate from a reusable semiconductor substrate conformally on the mechanically weak layer. The thin semiconductor substrate, the mechanically weak layer and the template forming a wafer. Then defining the border of the thin-film semiconductor substrate to be released by exposing the peripheral of the mechanically weak layer. Then releasing the thin-film semiconductor substrate by applying a controlled air flow parallel to said mechanically weak layer wherein the controlled air flow separates the thin semiconductor substrate and template according to lifting forces.
摘要翻译：本公开涉及方法和装置模板。该方法包括在半导体模板上共形形成机械弱层。然后在机械弱层上共形成用于从可重复使用的半导体衬底释放薄半导体衬底的薄层。薄半导体衬底，机械弱层和模板形成晶片。然后通过暴露机械薄弱层的周边来限定待释放的薄膜半导体衬底的边界。然后通过施加平行于所述机械弱层的受控空气流来释放薄膜半导体衬底，其中受控空气流根据提升力分离薄半导体衬底和模板。

16. 发明申请

US20120103408A1 BACKPLANE REINFORCEMENT AND INTERCONNECTS FOR SOLAR CELLS 有权
标题翻译：太阳能电池的背板加固和互连
公开(公告)号：US20120103408A1
公开(公告)日：2012-05-03
申请号：US13204626
申请日：2011-08-05
申请人： Mehrdad M. Moslehi , David Xuan-Qi Wang , Karl-Josef Kramer , Sean M. Seutter , Sam Tone Tor , Anthony Calcaterra
发明人： Mehrdad M. Moslehi , David Xuan-Qi Wang , Karl-Josef Kramer , Sean M. Seutter , Sam Tone Tor , Anthony Calcaterra
IPC分类号： H01L31/0224
CPC分类号： H01L31/022458 , H01L31/02008 , H01L31/02013 , H01L31/022441 , H01L31/028 , H01L31/0516 , H01L31/0682 , H01L31/1804 , H01L31/1892 , Y02E10/50
摘要： Fabrication methods and structures relating to backplanes for back contact solar cells that provide for solar cell substrate reinforcement and electrical interconnects are described. The method comprises depositing an interdigitated pattern of base electrodes and emitter electrodes on a backside surface of a semiconductor substrate, forming electrically conductive emitter plugs and base plugs on the interdigitated pattern, and attaching a backplane having a second interdigitated pattern of base electrodes and emitter electrodes at the conductive emitter and base plugs to form electrical interconnects.
摘要翻译：描述了提供太阳能电池基板加强和电互连的背接触太阳能电池的背板的制造方法和结构。该方法包括在半导体衬底的背面上沉积基底电极和发射电极的交错图案，在交叉图案上形成导电发射器插头和基座插头，并且附接具有第二互补图案的基极和发射极的背板在导电发射器和基座插头上形成电互连。

17. 发明申请

US20100300518A1 THREE-DIMENSIONAL THIN-FILM SEMICONDUCTOR SUBSTRATE WITH THROUGH-HOLES AND METHODS OF MANUFACTURING 有权
标题翻译：具有穿孔的三维薄膜半导体衬底及其制造方法
公开(公告)号：US20100300518A1
公开(公告)日：2010-12-02
申请号：US12791842
申请日：2010-06-01
申请人： Mehrdad M. Moslehi , David Xuan-Qi Wang
发明人： Mehrdad M. Moslehi , David Xuan-Qi Wang
IPC分类号： H01L31/0352 , H01L31/18
CPC分类号： H01L31/0352 , H01L21/00 , H01L27/142 , H01L31/022458 , H01L31/035281 , H01L31/03529 , H01L31/0468 , H01L31/054 , H01L31/056 , H01L31/1804 , H01L31/1892 , Y02E10/547 , Y02P70/521
摘要： A method for the fabrication of a three-dimensional thin-film semiconductor substrate with selective through-holes is provided. A porous semiconductor layer is conformally formed on a semiconductor template comprising a plurality of three-dimensional inverted pyramidal surface features defined by top surface areas aligned along a (100) crystallographic orientation plane of the semiconductor template and a plurality of inverted pyramidal cavities defined by sidewalls aligned along the (111) crystallographic orientation plane of the semiconductor template. An epitaxial semiconductor layer is conformally formed on the porous semiconductor layer. The epitaxial semiconductor layer is released from the semiconductor template. Through-holes are selectively formed in the epitaxial semiconductor layer with openings between the front and back lateral surface planes of the epitaxial semiconductor layer to form a partially transparent three-dimensional thin-film semiconductor substrate.
摘要翻译：提供了一种制造具有选择性通孔的三维薄膜半导体衬底的方法。多孔半导体层保形地形成在半导体模板上，该半导体模板包括由半导体模板的（100）晶体取向平面对准的顶表面区域和由侧壁限定的多个反向锥体腔限定的多个三维倒锥体表面特征沿着半导体模板的（111）晶体取向平面排列。在多孔半导体层上共形形成外延半导体层。外延半导体层从半导体模板释放。在外延半导体层中选择性地形成通孔，该外延半导体层在外延半导体层的正面和背面侧面之间具有开口，形成部分透明的三维薄膜半导体衬底。

18. 发明申请

US20100279494A1 Method For Releasing a Thin-Film Substrate 有权
标题翻译：剥离薄膜基板的方法
公开(公告)号：US20100279494A1
公开(公告)日：2010-11-04
申请号：US12719766
申请日：2010-03-08
申请人： David Xuan-Qi Wang , Mehrdad M. Moslehi , Rafael Ricolcol , Joe Kramer
发明人： David Xuan-Qi Wang , Mehrdad M. Moslehi , Rafael Ricolcol , Joe Kramer
IPC分类号： H01L21/20
CPC分类号： H01L31/18 , H01L21/30608
摘要： The present disclosure relates to methods for selectively etching a porous semiconductor layer to separate a thin-film semiconductor substrate (TFSS) having planar or three-dimensional features from a corresponding semiconductor template. The method involves forming a conformal sacrificial porous semiconductor layer on a template. Next, a conformal thin film silicon substrate is formed on top of the porous silicon layer. The middle porous silicon layer is then selectively etched to separate the TFSS and semiconductor template. The disclosed advanced etching chemistries and etching methods achieve selective etching with minimal damage to the TFSS and template.
摘要翻译：本公开涉及用于选择性蚀刻多孔半导体层以从相应的半导体模板分离具有平面或三维特征的薄膜半导体衬底（TFSS）的方法。该方法包括在模板上形成共形牺牲多孔半导体层。接着，在多孔硅层的顶部形成保形薄膜硅衬底。然后选择性地蚀刻中间多孔硅层以分离TFSS和半导体模板。所公开的高级蚀刻化学和蚀刻方法实现选择性蚀刻，对TFSS和模板的损害最小。

19. 发明申请

US20150020877A1 HIGH-EFFICIENCY SOLAR PHOTOVOLTAIC CELLS AND MODULES USING THIN CRYSTALLINE SEMICONDUCTOR ABSORBERS 有权
标题翻译：高效太阳能光伏电池和使用薄晶体半导体吸收器的模块
公开(公告)号：US20150020877A1
公开(公告)日：2015-01-22
申请号：US13807631
申请日：2012-08-09
申请人： Mehrdad M. Moslehi , Pawan Kapur , Karl-Josef Kramer , Virendra V. Rana , Sean Seutter , Anand Deshpande , Anthony Calcaterra , Gerry Olsen , Kamran Manteghi , Thom Stalcup , George D. Kamian , David Xuan-Qi Wang , Yen-Sheng Su , Michael Wingert
发明人： Mehrdad M. Moslehi , Pawan Kapur , Karl-Josef Kramer , Virendra V. Rana , Sean Seutter , Anand Deshpande , Anthony Calcaterra , Gerry Olsen , Kamran Manteghi , Thom Stalcup , George D. Kamian , David Xuan-Qi Wang , Yen-Sheng Su , Michael Wingert
IPC分类号： H01L31/0224 , H01L31/0232 , H01L31/18 , H01L31/075 , H01L31/0376 , H01L31/0216 , H01L31/02
CPC分类号： H01L31/022441 , H01L31/0201 , H01L31/02167 , H01L31/02327 , H01L31/03765 , H01L31/0392 , H01L31/049 , H01L31/0516 , H01L31/0682 , H01L31/075 , H01L31/1812 , H01L31/1896 , Y02E10/547
摘要： Fabrication methods and structures relating to backplanes for back contact solar cells that provide for solar cell substrate reinforcement and electrical interconnects as well as Fabrication methods and structures for forming thin film back contact solar cells are described.
摘要翻译：描述了提供太阳能电池基板加强和电互连的背接触太阳能电池的背板以及用于形成薄膜背接触太阳能电池的制造方法和结构的制造方法和结构。

20. 发明申请

US20130288418A1 METHOD FOR FABRICATING A THREE-DIMENSIONAL THIN-FILM SEMICONDUCTOR SUBSTRATE FROM A TEMPLATE 审中-公开
标题翻译：从模板制造三维薄膜半导体基板的方法
公开(公告)号：US20130288418A1
公开(公告)日：2013-10-31
申请号：US13652237
申请日：2012-10-15
申请人： David Xuan-Qi Wang , Mehrdad M. Moslehi
发明人： David Xuan-Qi Wang , Mehrdad M. Moslehi
IPC分类号： H01L31/18
CPC分类号： H01L31/186 , H01L31/02363 , H01L31/035281 , H01L31/068 , H01L31/18 , H01L31/1804 , H01L31/1892 , Y02E10/547 , Y02P70/521
摘要： A method is presented for fabrication of a three-dimensional thin-film solar cell semiconductor substrate from a template. A semiconductor template having three-dimensional surface features comprising a top surfaces substantially aligned along a (100) crystallographic plane of semiconductor template and a plurality of inverted pyramidal cavities defined by sidewalls substantially aligned along a (111) crystallographic plane is formed according to an anisotropic etching process. A dose of relatively of high energy light-mass species is implanted in the template at a uniform depth and parallel to the top surfaces and said sidewalls defining the inverted pyramidal cavities of the template. The semiconductor template is annealed to convert the dose of relatively of high energy light-mass species to a mechanically-weak-thin layer. The semiconductor template is cleaved along the mechanically-weak-thin layer to release a three-dimensional thin-film semiconductor substrate from the semiconductor template.
摘要翻译：介绍了从模板制造三维薄膜太阳能电池半导体衬底的方法。具有三维表面特征的半导体模板包括沿着半导体模板的（100）结晶平面基本上对准的顶表面和由沿（111）晶面平行排列的侧壁限定的多个倒置金字塔形腔，根据各向异性蚀刻工艺。将相对高能量光质物质的剂量以均匀的深度注入模板中，并平行于顶表面和限定模板的倒锥形腔的所述侧壁。将半导体模板退火以将相对较高能量的光质物质的剂量转换成机械弱薄层。半导体模板沿着机械弱薄层切割，以从半导体模板释放三维薄膜半导体衬底。

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