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    • 12. 发明申请
    • DC-DC converter
    • DC-DC转换器
    • US20100060254A1
    • 2010-03-11
    • US12585123
    • 2009-09-03
    • Norihito TokuraHisato KatoNorikazu KanatakeMasakiyo Horie
    • Norihito TokuraHisato KatoNorikazu KanatakeMasakiyo Horie
    • G05F5/00
    • H02M3/158
    • A synchronous-rectifier type DC-DC converter includes a high-side main switch element, a low-side rectifying switch element, and a control drive circuit. The rectifying switch element includes a rectifying transistor element and a rectifying diode element connected in antiparallel with the rectifying transistor element. The control drive circuit detects an input voltage to the main switch element and determines the input voltage or a rate of increase in the input voltage. When the determined value exceeds a predetermined reference value, a complementary ON/OFF operation of the main switch element and the rectifying transistor element is released, and a state where both the main switch element and the rectifying transistor element are kept OFF for a time period that is longer than a dead-time during the complementary ON/OFF operation is set.
    • 同步整流型DC-DC转换器包括高侧主开关元件,低侧整流开关元件和控制驱动电路。 整流开关元件包括整流晶体管元件和与整流晶体管元件反并联连接的整流二极管元件。 控制驱动电路检测到主开关元件的输入电压,并确定输入电压或输入电压的增加率。 当确定的值超过预定的参考值时,主开关元件和整流晶体管元件的互补的导通/截止操作被解除,并且主开关元件和整流晶体管元件两者保持断开一段时间的状态 在补充ON / OFF操作期间比死区时间长。
    • 16. 发明授权
    • Method for production of magnetic recording medium
    • 磁记录介质的制造方法
    • US5576075A
    • 1996-11-19
    • US551341
    • 1995-11-01
    • Kaoru KawasakiAkira SaitohAkihiko SekiKazuyuki ShimazakiTakahiro MoriHisato Kato
    • Kaoru KawasakiAkira SaitohAkihiko SekiKazuyuki ShimazakiTakahiro MoriHisato Kato
    • B05D5/12G11B5/842G11B5/848B05D3/00
    • G11B5/842G11B5/848
    • This invention concerns a method for producing a magnetic recording medium by passing a magnetic coating material comprising a ferromagnetic powder and a binder resin through an ultrasonic treating device under the operating conditions of 10 to 200 kHz of frequency of oscillation and 10 to 100 .mu.m of amplitude of ultrasonic wave thereby effecting ultrasonic treatment of the magnetic coating material and coating the treated magnetic coating material on a substrate either directly or through an undercoating layer, characterized in that the ultrasonic treating device comprises an ultrasonic treating tank adapted to effect ultrasonic wave treatment of the magnetic coating material by passing the material therethrough, an ultrasonic wave horn inserted into the ultrasonic treating tank and provided with an operating end surface capable of exerting an ultrasonic oscillation on the magnetic coating material, and an ultrasonic wave oscillator connected to a basal part side of the ultrasonic wave horn, an operating depth H defined by the distance from the operating end surface of the ultrasonic wave horn to a bottom wall surface of the ultrasonic treating tank opposed to the operating end surface is set at a magnitude in the range of 2 to 40 mm, and the magnetic coating material to be coated on the substrate is subjected to tile ultrasonic treatment.
    • 本发明涉及一种磁记录介质的制造方法,其特征在于,在振荡频率为10〜200kHz,振动频率为10〜100μm的运行条件下,通过超声波处理装置使包含铁磁性粉末和粘结剂树脂的磁性涂层材料通过 超声波的振幅,从而对磁性涂层材料进行超声波处理,并将处理过的磁性涂层材料直接或通过底涂层涂覆在基底上,其特征在于,超声波处理装置包括适用于超声波处理的超声波处理槽 所述磁性涂层材料通过所述材料通过,超声波喇叭插入所述超声波处理槽中并且具有能够在所述磁性涂层材料上施加超声波振荡的操作端面,以及连接到所述基底部侧的超声波振荡器 的超声波 通过从超声波喇叭的操作端面到操作端面的超声波处理槽的底壁面的距离限定的操作深度H被设定在2〜40mm的范围内 并且将要涂覆在基底上的磁性涂层材料进行瓦片超声波处理。
    • 18. 发明授权
    • Oxide semiconductor, thin-film transistor and method for producing the same
    • 氧化物半导体,薄膜晶体管及其制造方法
    • US07807515B2
    • 2010-10-05
    • US12086628
    • 2007-05-25
    • Hisato KatoHaruo KawakamiNobuyuki SekineKyoko Kato
    • Hisato KatoHaruo KawakamiNobuyuki SekineKyoko Kato
    • H01L21/00H01L21/84
    • H01L29/78693C01G19/006C01P2006/40H01L29/66969
    • Disclosed is an oxide semiconductor having an amorphous structure, wherein higher mobility and reduced carrier concentration are achieved. Also disclosed are a thin film transistor, a method for producing the oxide semiconductor, and a method for producing the thin film transistor. Specifically disclosed is an oxide semiconductor which is characterized by being composed of an amorphous oxide represented by the following a general formula: Inx+1MZny+1SnzO(4+1.5x+y+2z) (wherein M is Ga or Al, 0≦x≦1, −0.2≦y≦1.2, z≧0.4 and 0.5≦(x+y)/z≦3). This oxide semiconductor is preferably subjected to a heat treatment in an oxidizing gas atmosphere after film formation. Also specifically disclosed is a thin film transistor which is characterized by comprising the oxide semiconductor.
    • 公开了具有非晶结构的氧化物半导体,其中实现了更高的迁移率和降低的载流子浓度。 还公开了薄膜晶体管,氧化物半导体的制造方法以及薄膜晶体管的制造方法。 具体公开了一种氧化物半导体,其特征在于由以下通式表示的无定形氧化物组成:Inx + 1MZny + 1SnzO(4 + 1.5x + y + 2z)(其中M为Ga或Al,0≦̸ x&nlE ; 1,-0.2≦̸ y≦̸ 1.2,z≥0.4和0.5≦̸(x + y)/ z≦̸ 3)。 该氧化物半导体优选在成膜后在氧化气体气氛中进行热处理。 还具体公开了一种薄膜晶体管,其特征在于包括氧化物半导体。