专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明授权

US5693835A Fish oil having decreased fish odor and a method for preparing the same 失效
标题翻译：鱼油味道减少的鱼油及其制备方法
公开(公告)号：US5693835A
公开(公告)日：1997-12-02
申请号：US378276
申请日：1995-01-26
申请人： Hiroaki Konishi , Kiyoshi Tatsumi , Norifumi Sato
发明人： Hiroaki Konishi , Kiyoshi Tatsumi , Norifumi Sato
IPC分类号： C11C3/12 , C07C51/36
CPC分类号： C11C3/126 , C11C3/123
摘要： A method for preparing fish oil having decreased fish odor, which comprises slightly hydrogenating fish oil to have decrease rate of iodine value of 15% or less and decrease rate of highly unsaturated fatty acid of 33% or less. A method for preparing fish oil having decreased fish odor, which comprises slightly hydrogenating fish oil under the following non-selective conditions: (1) an amount of catalyst used in the hydrogenation is 0.05% by weight or more to an amount of the fish oil; (2) hydrogen pressure in gaseous phase at the beginning of the hydrogenation is 3 kg/cm.sup.2 or more; (3) reaction temperature of the hydrogenation is in the range from 90.degree. to 150.degree. C.; (4) reaction time of the hydrogenation is in the range from 5 to 30 minutes. The fish oil is preferably sardine oil, mackerel oil, skipjack oil, tuna oil, skipjack orbital fat or tuna orbital fat.
摘要翻译：一种制备鱼油味减少的鱼油的方法，其包括使鱼油稍微加氢使碘值降低15％以下，高不饱和脂肪酸的降低率为33％以下。一种制备鱼油味的鱼油的方法，其包括在以下非选择性条件下轻微加氢鱼油：（1）氢化中使用的催化剂的量为鱼油的量的0.05重量％以上 ; （2）氢化开始时的气相氢压为3kg / cm 2以上; （3）氢化反应温度在90〜150℃的范围内。（4）氢化反应时间为5〜30分钟。鱼油优选为沙丁鱼油，鲭鱼油，skip鱼油，金枪鱼油，skip鱼轨道脂肪或金枪鱼轨道脂肪。

12. 发明授权

US5686131A Edible oil or fat and edible oil or fat mixture 失效
标题翻译：食用油或脂肪和食用油或脂肪混合物
公开(公告)号：US5686131A
公开(公告)日：1997-11-11
申请号：US443993
申请日：1995-05-18
申请人： Norifumi Sato , Yuzi Murakami , Tadashi Idota , Hiroaki Konishi , Kiyoshi Tatsumi , Mototake Murakami
发明人： Norifumi Sato , Yuzi Murakami , Tadashi Idota , Hiroaki Konishi , Kiyoshi Tatsumi , Mototake Murakami
IPC分类号： A23L1/30 , A23D9/00 , C11C3/10 , A23D7/00
CPC分类号： A23D9/00 , C11C3/10
摘要： An edible oil or fat improved in oxidative stability and suppressed in the development of off flavor is obtained without impairment of high physiological functions inherent to highly-unsaturated fatty acids. To obtain the edible oil or fat, a specific polyunsaturated fatty acid-base oil or a particular fat and saturated fatty acid-base oil or fat are mixed and subjected to an interesterification reaction so that fatty acids are caused to bond at random on glycerol skeletons of the oil or fat to achieve the following properties: (a) the content of polyunsaturated fatty acids of at least three unsaturated bonds per molecule in fatty acid residual groups: 5 to 30%, (b) the content of saturated fatty acids free of any unsaturated bond: 50 to 80%, (c) iodine value: at least 35, and (d) melting point: 35.degree. C. or higher.
摘要翻译：在高度不饱和脂肪酸固有的高生理功能的情况下，可获得改善氧化稳定性和抑制脱味风味的食用油脂。为了获得食用油或脂肪，将特定的多不饱和脂肪酸基油或特定脂肪和饱和脂肪酸基油或脂肪混合并进行酯交换反应，使脂肪酸随机地在甘油骨架上结合的油或脂肪，以达到以下性能：（a）脂肪酸残基中每分子至少三个不饱和键的多不饱和脂肪酸含量：5-30％，（b）不含饱和脂肪酸的饱和脂肪酸含量任何不饱和键：50〜80％，（c）碘值：至少35，（d）熔点：35℃以上。

13. 发明授权

US08518480B2 Developing treatment method, program, computer storage medium and developing treatment system 有权
标题翻译：开发治疗方法，程序，计算机存储介质和开发治疗系统
公开(公告)号：US08518480B2
公开(公告)日：2013-08-27
申请号：US13004246
申请日：2011-01-11
申请人： Norifumi Sato , Yukio Kiba , Tetsushi Miyamoto , Kazuhisa Hasebe
发明人： Norifumi Sato , Yukio Kiba , Tetsushi Miyamoto , Kazuhisa Hasebe
IPC分类号： B05C5/02 , B05D1/26
CPC分类号： H01L21/6715 , G03F7/3021 , H01L21/67109 , H01L21/67178 , H01L21/67742 , H01L21/67748
摘要： The present invention is a method of developing a resist film on a substrate using a developing solution at a predetermined temperature lower than room temperature, including a first cooling step of mounting and cooling the substrate on a cooling plate at a temperature lower than room temperature and higher than the predetermined temperature in a cooling apparatus; a second cooling step of then carrying the substrate into a developing apparatus and supplying a rinse solution at the predetermined temperature or lower onto the substrate to cool the substrate in the developing apparatus; a developing step of then supplying the developing solution onto the substrate and developing the resist film on the substrate to form a resist pattern in the resist film; and a cleaning step of then supplying a rinse solution at the predetermined temperature onto the substrate to clean a front surface of the substrate.
摘要翻译：本发明是一种在低于室温的预定温度下使用显影液在基板上显影抗蚀剂膜的方法，该方法包括：在低于室温的温度下将基板安装和冷却在冷却板上的第一冷却步骤;以及高于冷却装置中的预定温度; 第二冷却步骤，然后将衬底运送到显影装置中并将预定温度或更低的冲洗溶液供应到衬底上以冷却显影装置中的衬底; 显影步骤，然后将显影液供应到基底上，并在基底上显影抗蚀剂膜，以在抗蚀剂膜中形成抗蚀剂图案; 以及清洗步骤，然后将所述预定温度的冲洗溶液供应到所述基板上以清洁所述基板的前表面。

14. 外观设计

USD666979S1 Substrate holder 有权
标题翻译：基板支架
公开(公告)号：USD666979S1
公开(公告)日：2012-09-11
申请号：US29393934
申请日：2011-06-10
申请人： Akihiro Teramoto , Norifumi Sato
设计人： Akihiro Teramoto , Norifumi Sato

15. 发明授权

US5796145A Semiconductor device composed of MOSFET having threshold voltage control section 失效
标题翻译：由具有阈值电压控制部分的MOSFET组成的半导体器件
公开(公告)号：US5796145A
公开(公告)日：1998-08-18
申请号：US843834
申请日：1997-04-21
申请人： Norifumi Sato
发明人： Norifumi Sato
IPC分类号： H01L29/78 , H01L21/336 , H01L21/8238 , H01L27/092 , H01L29/00 , H01L29/10 , H01L29/76
CPC分类号： H01L21/823814 , H01L27/092 , H01L29/1045 , H01L29/66575
摘要： A semiconductor device includes a MOSFET which has a source and drain region of a first conductivity type, and an ion implanted channel section, and a pair of threshold control sections having a second conductivity type, one being disposed in a substrate surface between the channel section and the source region and the other being disposed in the substrate surface between the channel section and the drain region, and each of the threshold control sections having an impurity concentration so high that a threshold voltage of the MOSFET can be controlled. The threshold voltage of the MOSFET is not determined by the impurity concentration in the ion implanted channel section but is determined by the impurity concentration in the threshold voltage control sections. This enables the adequate control of the threshold voltage of the MOSFET that is part of a MOS integrated circuit and the simplification of the manufacturing method of the MOS integrated circuit.
摘要翻译：半导体器件包括具有第一导电类型的源极和漏极区域以及离子注入沟道部分的MOSFET以及具有第二导电类型的一对阈值控制部分，一个设置在沟道部分之间的衬底表面中并且源极区域和另一个设置在沟道部分和漏极区域之间的衬底表面中，并且每个阈值控制部分具有如此高的杂质浓度，使得可以控制MOSFET的阈值电压。 MOSFET的阈值电压不取决于离子注入通道部分中的杂质浓度，而是由阈值电压控制部分中的杂质浓度决定。这使得能够充分地控制作为MOS集成电路的一部分的MOSFET的阈值电压以及简化MOS集成电路的制造方法。

16. 发明授权

US5721619A Misregistration detecting marks for pattern formed on semiconductor substrate 失效
标题翻译：在半导体衬底上形成图案的对准检测标记
公开(公告)号：US5721619A
公开(公告)日：1998-02-24
申请号：US767846
申请日：1996-12-17
申请人： Takami Hiruma , Norifumi Sato
发明人： Takami Hiruma , Norifumi Sato
IPC分类号： G03F1/42 , G03F7/20 , H01L21/027 , G01B11/00
CPC分类号： G03F7/70633
摘要： A semiconductor device according to the present invention has misregistration detecting marks provided in the periphery of a semiconductor chip. The misregistration detecting marks consist of a first scale mark for detecting misalignment in a first direction, a second scale mark for detecting misalignment in a second direction perpendicular to the first direction, and a third scale mark for detecting misalignment in a third direction making respectively specified angles with the first direction and the second direction.
摘要翻译：根据本发明的半导体器件具有设置在半导体芯片周围的不对准检测标记。不对准检测标记包括用于检测在第一方向上的不对准的第一刻度标记，用于检测与第一方向垂直的第二方向上的未对准的第二刻度标记和用于检测分别指定的第三方向上的未对准的第三刻度标记与第一方向和第二方向成角度。

17. 发明授权

US08707893B2 Substrate treatment system, substrate treatment method, and non-transitory computer storage medium 有权
标题翻译：底物处理系统，底物处理方法和非暂时计算机存储介质
公开(公告)号：US08707893B2
公开(公告)日：2014-04-29
申请号：US13300114
申请日：2011-11-18
申请人： Masatoshi Deguchi , Hideo Funakoshi , Toshichika Takei , Norifumi Sato , Wataru Kiyota , Daisuke Ishimaru , Shinichi Machidori , Ikuo Sunaka , Shigenori Kamei
发明人： Masatoshi Deguchi , Hideo Funakoshi , Toshichika Takei , Norifumi Sato , Wataru Kiyota , Daisuke Ishimaru , Shinichi Machidori , Ikuo Sunaka , Shigenori Kamei
IPC分类号： B05C13/00 , B05C13/02 , B05C21/00 , B65H1/00
CPC分类号： H01L21/67178 , H01L21/6708 , H01L21/6715 , H01L21/6719 , H01L21/67259 , H01L21/681 , H01L21/68707
摘要： A substrate treatment system includes a plurality of treatment apparatuses, a position adjustment apparatus adjusting a center position of the substrate, a substrate transfer apparatus transferring the substrate to the treatment apparatuses and the position adjustment apparatus, and a control unit controlling operations of the apparatuses. The substrate transfer apparatus includes an arm part curved along a peripheral edge portion of the substrate with a radius of curvature larger than a radius of the substrate, and a holding part projecting inward from the arm part and holding a rear surface of the substrate. The position adjustment apparatus includes a mounting table which holds a central portion of the rear surface of the substrate and is rotatable and horizontally movable. The control unit controls the mounting table such that the center position of the substrate held on the mounting table is aligned with a center position of the arm part.
摘要翻译：基板处理系统包括多个处理装置，调整基板的中心位置的位置调整装置，将基板传送到处理装置和位置调整装置的基板输送装置，以及控制装置的动作的控制部。该基片传送装置包括：沿着基片周边部分弯曲的臂部分，其曲率半径大于基片的半径;以及保持部分，其从臂部向内突出并保持基片的后表面。位置调整装置包括安装台，该安装台保持基板后表面的中心部分并且可旋转和水平移动。控制单元控制安装台，使得保持在安装台上的基板的中心位置与臂部的中心位置对准。

18. 外观设计

USD665759S1 Substrate transfer holder 有权
标题翻译：基板转印支架
公开(公告)号：USD665759S1
公开(公告)日：2012-08-21
申请号：US29393919
申请日：2011-06-10
申请人： Norifumi Sato
设计人： Norifumi Sato

19. 发明申请

US20120135148A1 SUBSTRATE TREATMENT SYSTEM, SUBSTRATE TREATMENT METHOD, AND NON-TRANSITORY COMPUTER STORAGE MEDIUM 有权
标题翻译：基板处理系统，基板处理方法和非终端计算机存储介质
公开(公告)号：US20120135148A1
公开(公告)日：2012-05-31
申请号：US13300114
申请日：2011-11-18
申请人： Masatoshi Deguchi , Hideo Funakoshi , Toshichika Takei , Norifumi Sato , Wataru Kiyota , Daisuke Ishimaru , Shinichi Machidori , Ikuo Sunaka , Shigenori Kamei
发明人： Masatoshi Deguchi , Hideo Funakoshi , Toshichika Takei , Norifumi Sato , Wataru Kiyota , Daisuke Ishimaru , Shinichi Machidori , Ikuo Sunaka , Shigenori Kamei
IPC分类号： H01L21/68 , B05D1/02 , G06F19/00 , B05C11/00 , H01L21/677 , B05C9/14 , B05D3/02
CPC分类号： H01L21/67178 , H01L21/6708 , H01L21/6715 , H01L21/6719 , H01L21/67259 , H01L21/681 , H01L21/68707
摘要： A substrate treatment system includes a plurality of treatment apparatuses, a position adjustment apparatus adjusting a center position of the substrate, a substrate transfer apparatus transferring the substrate to the treatment apparatuses and the position adjustment apparatus, and a control unit controlling operations of the apparatuses. The substrate transfer apparatus includes an arm part curved along a peripheral edge portion of the substrate with a radius of curvature larger than a radius of the substrate, and a holding part projecting inward from the arm part and holding a rear surface of the substrate. The position adjustment apparatus includes a mounting table which holds a central portion of the rear surface of the substrate and is rotatable and horizontally movable. The control unit controls the mounting table such that the center position of the substrate held on the mounting table is aligned with a center position of the arm part.
摘要翻译：基板处理系统包括多个处理装置，调整基板的中心位置的位置调整装置，将基板传送到处理装置和位置调整装置的基板输送装置，以及控制装置的动作的控制部。该基片传送装置包括：沿着基片周边部分弯曲的臂部分，其曲率半径大于基片的半径;以及保持部分，其从臂部向内突出并保持基片的后表面。位置调整装置包括安装台，该安装台保持基板后表面的中心部分并且可旋转和水平移动。控制单元控制安装台，使得保持在安装台上的基板的中心位置与臂部的中心位置对准。

20. 发明申请

US20110183073A1 DEVELOPING TREATMENT METHOD, PROGRAM, COMPUTER STORAGE MEDIUM AND DEVELOPING TREATMENT SYSTEM 有权
标题翻译：开发处理方法，程序，计算机存储介质和开发处理系统
公开(公告)号：US20110183073A1
公开(公告)日：2011-07-28
申请号：US13004246
申请日：2011-01-11
申请人： Norifumi Sato , Yukio Kiba , Tetsushi Miyamoto , Kazuhisa Hasebe
发明人： Norifumi Sato , Yukio Kiba , Tetsushi Miyamoto , Kazuhisa Hasebe
IPC分类号： B05D3/00 , B05C9/10
CPC分类号： H01L21/6715 , G03F7/3021 , H01L21/67109 , H01L21/67178 , H01L21/67742 , H01L21/67748
摘要： The present invention is a method of developing a resist film on a substrate using a developing solution at a predetermined temperature lower than room temperature, including a first cooling step of mounting and cooling the substrate on a cooling plate at a temperature lower than room temperature and higher than the predetermined temperature in a cooling apparatus; a second cooling step of then carrying the substrate into a developing apparatus and supplying a rinse solution at the predetermined temperature or lower onto the substrate to cool the substrate in the developing apparatus; a developing step of then supplying the developing solution onto the substrate and developing the resist film on the substrate to form a resist pattern in the resist film; and a cleaning step of then supplying a rinse solution at the predetermined temperature onto the substrate to clean a front surface of the substrate.
摘要翻译：本发明是一种在低于室温的预定温度下使用显影液在基板上显影抗蚀剂膜的方法，该方法包括：在低于室温的温度下将基板安装和冷却在冷却板上的第一冷却步骤;以及高于冷却装置中的预定温度; 第二冷却步骤，然后将衬底运送到显影装置中并将预定温度或更低的冲洗溶液供应到衬底上以冷却显影装置中的衬底; 显影步骤，然后将显影液供应到基底上，并在基底上显影抗蚀剂膜，以在抗蚀剂膜中形成抗蚀剂图案; 以及清洗步骤，然后将所述预定温度的冲洗溶液供应到所述基板上以清洁所述基板的前表面。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式