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11. 发明授权

US06791150B2 Optical module and optical transceiver apparatus 有权
标题翻译：光模块和光收发器
公开(公告)号：US06791150B2
公开(公告)日：2004-09-14
申请号：US10327091
申请日：2002-12-24
申请人： Shinichi Takagi
发明人： Shinichi Takagi
IPC分类号： H01L2972
CPC分类号： H01S5/02415 , H01L2224/45144 , H01L2224/48091 , H01L2924/16195 , H01S5/02216 , H01S5/02248 , H01S5/02284 , H01S5/0683 , H01L2924/00014 , H01L2924/00
摘要： A thermoelectric semiconductor has a P-type semiconductor and an N-type semiconductor disposed in parallel. A heat absorbing side of the thermoelectric semiconductor and a substrate that has an optical element mounted on its upper surface are disposed on the same plane. A heat radiation side of the thermoelectric semiconductor is disposed such that a direction from the heat absorbing side to the heat radiation side of the thermoelectric semiconductor is parallel with the upper surface of the substrate. Based on this arrangement, it is possible to set the environmental temperature of an optical module to the same level as the operation temperature of a laser diode.
摘要翻译：热电半导体具有平行配置的P型半导体和N型半导体。热电半导体的吸热侧和安装在其上表面上的光学元件的基板设置在同一平面上。热电半导体的散热侧被配置为使得从热电半导体的吸热侧到散热侧的方向与基板的上表面平行。基于这种布置，可以将光学模块的环境温度设置为与激光二极管的操作温度相同的水平。

12. 发明授权

US06690043B1 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06690043B1
公开(公告)日：2004-02-10
申请号：US09717039
申请日：2000-11-22
申请人： Koji Usuda , Shinichi Takagi
发明人： Koji Usuda , Shinichi Takagi
IPC分类号： H01L310328
CPC分类号： H01L29/78696 , H01L29/1054 , H01L29/66742 , H01L29/78681 , H01L29/78687
摘要： A semiconductor device comprises a base substrate, an insulating film formed on the substrate, an undoped first and lattice-relaxed semiconductor layer formed on the insulating film, a second semiconductor layer having a tensile strain and formed on the first semiconductor layer, and a MISFET formed on the second semiconductor layer. Since the MISFET is formed in a strained Si layer, electrons are prevented from scattering in a channel region, improving the electron mobility. Furthermore, since the MISFET is formed in a thin SOI layer having a thickness of 100 nm or less, it is possible to reduce a parasitic capacitance in addition to the improvement of the electron mobility. As a result, the MISFET excellent in drivability can be obtained.
摘要翻译：半导体器件包括基底基板，形成在基板上的绝缘膜，形成在绝缘膜上的未掺杂的第一和晶格弛豫半导体层，具有拉伸应变并形成在第一半导体层上的第二半导体层，以及MISFET 形成在第二半导体层上。由于MISFET形成在应变Si层中，所以防止电子在沟道区域中散射，提高电子迁移率。此外，由于MISFET形成在厚度为100nm以下的薄SOI层中，除了改善电子迁移率之外，还可以减小寄生电容。结果，可以获得驾驶性优异的MISFET。

13. 发明授权

US6102823A Toothed power transmission belt 失效
标题翻译：齿形传动皮带
公开(公告)号：US6102823A
公开(公告)日：2000-08-15
申请号：US958240
申请日：1992-10-07
申请人： Yasutoshi Hosokawa , Akiyoshi Homan , Kiyokazu Wada , Koji Matsuo , Isao Koyama , Shinichi Takagi , Mitsuo Ishikawa
发明人： Yasutoshi Hosokawa , Akiyoshi Homan , Kiyokazu Wada , Koji Matsuo , Isao Koyama , Shinichi Takagi , Mitsuo Ishikawa
IPC分类号： F16G5/16 , F16G1/21
CPC分类号： F16G5/16 , F16G5/166
摘要： A power transmission belt having a center belt with a length, an inside surface, and an outside surface. Upper and lower blocks are provided and each has a leading face, a trailing face, and laterally oppositely facing pulley-engaging side surfaces. The upper and lower blocks are connected to each other to maintain the upper block, lower block and center belt together in an operative relationship without penetrating the center belt. At least one of the pulley-engaging side surfaces on at least one of the upper and lower blocks is uninterrupted between the leading and trailing faces on the one of the upper and lower blocks so that the at least one side surface can engage a cooperating pulley surface along an uninterrupted line between the leading and trailing faces of the at least one side surface.
摘要翻译：具有长度，内表面和外表面的中心带的动力传动带。设置上下块，并且每个具有前表面，后表面和与侧向相对的滑轮接合侧表面。上部和下部块彼此连接以将上部块，下部块和中心带以可操作的关系一起保持而不穿透中心带。所述上部和下部块中的至少一个上的滑轮接合侧表面中的至少一个在所述上部和下部块之一之间的前表面和后表面之间不间断，使得所述至少一个侧表面可以接合协作滑轮表面沿着至少一个侧表面的前表面和后表面之间的不间断的线。

14. 发明授权

US5744097A DNA base sequencer 失效
标题翻译： DNA碱基测序仪
公开(公告)号：US5744097A
公开(公告)日：1998-04-28
申请号：US621888
申请日：1996-03-26
申请人： Hiroaki Machida , Yuusuke Miyazaki , Shinichi Takagi , Yoshinori Mishina
发明人： Hiroaki Machida , Yuusuke Miyazaki , Shinichi Takagi , Yoshinori Mishina
IPC分类号： G01N21/64 , C07H21/04 , C12M1/00 , C12Q1/68 , G01N27/447 , G01N33/50 , G01N15/06 , C12N15/00 , G01N33/00
CPC分类号： G01N27/44743 , Y10T436/143333
摘要： The improved DNA base sequencer comprising an electrophoresis plate having a gel electrolyte layer held between two glass plates, one of which is partially cut away on the top edge in the direction of width, an assay compartment for accommodating said electrophoresis plate in a vertically erect position, a lower reservoir of a buffer solution in which the lower part of the gel electrolyte layer in the electrophoresis plate is to be immersed, an upper reservoir of a buffer solution in which the upper part of said electrolyte layer is to be immersed, photoexciting laser light applying means by which laser light is emitted from a lateral side of the electrophoresis plate in such a way that it crosses the lanes in said plate at right angles, and fluorescence detecting means by which the fluorescence emitted from a DNA fragment illuminated with the laser light is picked up and converted to an electric signal, and the apparatus is characterized in that a sharkstoothcomb made of a water-swellable material is inserted from the top edge of said electrophoresis plate into the space between the two glass plates, either the top or bottom edge of said sharkstoothcomb being provided with a plurality of teeth which are each tapered from the root toward the tip. Using this apparatus, samples can be easily and yet positively injected at specified lane positions on the gel electrolyte layer.
摘要翻译：改进的DNA碱基测序仪包括电泳板，该电泳板具有保持在两个玻璃板之间的凝胶电解质层，其中一个玻璃板在宽度方向上的顶部边缘部分地被切除;测定室，用于将所述电泳板容纳在垂直竖立位置将要浸渍电泳板中的凝胶电解质层的下部的缓冲溶液的下部储存器，要浸渍所述电解质层的上部的缓冲溶液的上部储存器，光激发光照射装置，其从电泳板的侧面以这样的方式从激光垂直方向穿过所述板中的通道;以及荧光检测装置，从激光照射的DNA片段发出的荧光光拾取并转换为电信号，该装置的特征在于，由水膨胀制成的鲨鱼架将能量材料从所述电泳板的顶部边缘插入到两个玻璃板之间的空间中，所述鲨鱼架的顶部或底部边缘设置有多个齿，其从根部朝向尖端逐渐变细。使用该装置，可以在凝胶电解质层上的特定泳道位置容易且积极地注入样品。

15. 发明授权

US5473435A Method of measuring the bent shape of a movable mirror of an exposure apparatus 失效
标题翻译：测量曝光装置的可动反射镜的弯曲形状的方法
公开(公告)号：US5473435A
公开(公告)日：1995-12-05
申请号：US338170
申请日：1994-11-09
申请人： Takashi Masuyuki , Kenji Nishi , Shinichi Takagi
发明人： Takashi Masuyuki , Kenji Nishi , Shinichi Takagi
IPC分类号： G01B11/30 , G03F7/20 , G01B11/00
CPC分类号： G03F7/70591 , G01B11/306 , G03F7/70425 , G03F7/70633 , G03F7/70716 , G03F7/70725
摘要： A method of measuring a bent shape of a movable mirror of an exposure apparatus, which includes:a two-dimensionally movable stage;a movable mirror provided to the stage;a position measurement device for radiating a light beam onto the movable mirror, and measuring a position of the stage using the light beam reflected by the movable mirror;an illumination optical system for illuminating a mask; anda projection optical system for forming an image on the mask on a photosensitive substrate placed on the stage, includes:the first step of stepping the stage along array coordinates on the basis of a measured value of the position measurement device;the second/step of sequentially exposing first and second measurement marks on the photosensitive substrate, so that images of at least two first measurement marks and images of at least two second measurement marks substantially overlap each other, the mask having the first and second measurement marks;the third step of measuring differences between positions of the images of the first and second measurement marks; andthe fourth step of calculating a bent shape of the movable mirror on the basis of the differences between the positions of the images of the first and second measurement marks.
摘要翻译：一种测量曝光装置的可动反射镜的弯曲形状的方法，包括：二维可移动台; 提供到舞台的可移动镜; 位置测量装置，用于将光束照射到可移动反射镜上，以及使用由可移动反射镜反射的光束测量舞台的位置; 用于照明面罩的照明光学系统; 以及投影光学系统，用于在放置在平台上的感光基板上的掩模上形成图像，包括：基于位置测量装置的测量值沿着阵列坐标步进台的第一步骤; 在感光基板上依次曝光第一和第二测量标记的第二/步骤，使得至少两个第一测量标记的图像和至少两个第二测量标记的图像基本上彼此重叠，该掩模具有第一和第二测量标记 ; 测量第一和第二测量标记的图像的位置之间的差异的第三步骤; 以及基于第一和第二测量标记的图像的位置之间的差异来计算可移动反射镜的弯曲形状的第四步骤。

16. 发明申请

US20110044572A1 DLC-COATED SLIDING MEMBER AND METHOD FOR PRODUCING THE SAME 有权
标题翻译： DLC涂层滑动构件及其制造方法
公开(公告)号：US20110044572A1
公开(公告)日：2011-02-24
申请号：US12866196
申请日：2009-02-03
申请人： Makoto Kano , Takahiro Horiuchi , Shinichi Takagi , Masao Kumagai , Eiji Shimodaira , Yoshio Miyasaka
发明人： Makoto Kano , Takahiro Horiuchi , Shinichi Takagi , Masao Kumagai , Eiji Shimodaira , Yoshio Miyasaka
IPC分类号： F16C33/06 , B05D3/12
CPC分类号： C23C24/04 , C23C16/0281 , C23C16/26 , C23C28/044 , C23C28/046 , F16C33/043 , F16C2206/04 , F16C2240/54
摘要： A sliding member is produced by forming hardening layers with two-layered structure on surface of a substrate metal with a Vickers hardness of not more than Hv300, such as aluminum or magnesium alloy for example, and then forming a DLC film having surface roughness defined as maximum height roughness Rz of 1 to 10 μm further on the hardening layers. The above-described hardening layers are composed of a first hardening layer dispersed with heavy metal particles, preferably made of tungsten and/or tantalum in the substrate metal, and a second hardening layer formed under the first hardening layer.
摘要翻译：通过在例如铝或镁合金等维氏硬度不高于Hv300的基板金属的表面上形成具有两层结构的硬化层，然后形成表面粗糙度定义为在硬化层上的最大高度粗糙度Rz为1〜10μm。上述硬化层由在基板金属中分散有优选由钨和/或钽制成的重金属颗粒的第一硬化层和在第一硬化层下形成的第二硬化层构成。

17. 发明申请

US20110018033A1 SEMICONDUCTOR WAFER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 有权
标题翻译：半导体晶体管，半导体器件及制造半导体器件的方法
公开(公告)号：US20110018033A1
公开(公告)日：2011-01-27
申请号：US12934233
申请日：2009-03-26
申请人： Mitsuru Takenaka , Shinichi Takagi , Masahiko Hata , Osamu Ichikawa
发明人： Mitsuru Takenaka , Shinichi Takagi , Masahiko Hata , Osamu Ichikawa
IPC分类号： H01L29/205 , H01L21/283 , H01L29/78 , H01L21/3205
CPC分类号： H01L29/7787 , H01L21/28264 , H01L29/205 , H01L29/517 , H01L29/66462 , H01L29/66522 , H01L29/78648 , H01L29/78681
摘要： It is an objective of the present invention to form a favorable interface between an oxide layer and a group 3-5 compound semiconductor using a practical and simple method.Provided is a semiconductor wafer comprising a first semiconductor layer that is a group 3-5 compound not containing arsenic and that lattice matches or pseudo-lattice matches with InP; and a second semiconductor layer that is formed to contact the first semiconductor layer, is a group 3-5 compound semiconductor layer that lattice matches or pseudo-lattice matches with InP, and can be selectively oxidized relative to the first semiconductor layer. Also provided is a semiconductor device comprising a first semiconductor layer that is a group 3-5 compound not containing arsenic and that lattice matches or pseudo-lattice matches with InP; an oxide layer formed by selectively oxidizing, relative to the first semiconductor layer, at least a portion of a second semiconductor layer that is a group 3-5 compound formed to contact the first semiconductor layer and that lattice matches or pseudo-lattice matches with InP; and a control electrode that adds an electric field to a channel formed in the first semiconductor layer.
摘要翻译：本发明的目的是使用实用和简单的方法在氧化物层和3-5族化合物半导体之间形成良好的界面。提供了包括第一半导体层的半导体晶片，其是不含砷的组3-5化合物，并且晶格匹配或伪晶格与InP匹配; 和形成为与第一半导体层接触的第二半导体层是与InP晶格匹配或伪晶格匹配的组3-5化合物半导体层，并且可相对于第一半导体层选择性地氧化。还提供了一种半导体器件，其包括第一半导体层，其是不含砷的组3-5化合物，并且晶格匹配或伪晶格与InP匹配; 通过相对于第一半导体层选择性地氧化形成为与第一半导体层接触的组3-5化合物的第二半导体层的至少一部分，并且晶格匹配或伪晶格匹配的InP形成的氧化物层 ; 以及将电场与形成在第一半导体层中的沟道相加的控制电极。

18. 发明申请

US20080135886A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080135886A1
公开(公告)日：2008-06-12
申请号：US11950716
申请日：2007-12-05
申请人： Toshifumi Irisawa , Shinichi Takagi , Naoharu Sugiyama
发明人： Toshifumi Irisawa , Shinichi Takagi , Naoharu Sugiyama
IPC分类号： H01L29/04 , H01L21/84
CPC分类号： H01L21/84 , H01L27/1203 , H01L27/1207 , H01L29/045 , H01L29/1054 , H01L29/42392 , H01L29/7842 , H01L29/785 , H01L29/78684
摘要： A semiconductor device includes an insulator layer, and an n-channel MIS transistor having an n channel and a pMIS transistor having a p channel which are formed on the insulator layer, wherein the n channel of the n-channel MIS transistor is formed of an Si layer having a uniaxial tensile strain in a channel length direction, the p channel of the p-channel MIS transistor is formed of an SiGe or Ge layer having a uniaxial compressive strain in the channel length direction, and the channel length direction of each of the n-channel MIS transistor and the p-channel MIS transistor is a direction.
摘要翻译：半导体器件包括绝缘体层和具有n沟道的n沟道MIS晶体管和具有ap沟道的pMIS晶体管，其形成在绝缘体层上，其中n沟道MIS晶体管的n沟道由Si 层在通道长度方向上具有单轴拉伸应变，p沟道MIS晶体管的p沟道由沟道长度方向上具有单轴压缩应变的SiGe或Ge层形成，并且沟道长度方向 n沟道MIS晶体管和p沟道MIS晶体管是<110>方向。

19. 发明申请

US20070241399A1 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070241399A1
公开(公告)日：2007-10-18
申请号：US11705450
申请日：2007-02-13
申请人： Toshifumi Irisawa , Toshinori Numata , Shinichi Takagi , Naoharu Sugiyama
发明人： Toshifumi Irisawa , Toshinori Numata , Shinichi Takagi , Naoharu Sugiyama
IPC分类号： H01L27/12 , H01L21/84
CPC分类号： H01L29/7853 , H01L29/66636 , H01L29/66795 , H01L29/78687
摘要： In a semiconductor device including a multi-gate MIS transistor having a channel on a plurality of surfaces, a gate electrode is formed on a gate insulating film on side surfaces of an island-like semiconductor layer formed along a given direction on an insulating film, and source/drain electrodes are formed in contact with the semiconductor layer. The semiconductor layer has a plurality of side surfaces along the given direction. All angles formed by adjacent side surfaces are larger than 90°. A section perpendicular to the given direction is vertically and horizontally symmetrical.
摘要翻译：在包括在多个表面上具有沟道的多栅极MIS晶体管的半导体器件中，在绝缘膜上沿着给定方向形成的岛状半导体层的侧表面上的栅极绝缘膜上形成栅电极，并且源极/漏极形成为与半导体层接触。半导体层具有沿给定方向的多个侧表面。由相邻侧面形成的所有角度大于90°。垂直于给定方向的部分垂直和水平对称。

20. 发明授权

US07154126B2 Feed through structure for optical semiconductor package 有权
标题翻译：光学半导体封装的馈通结构
公开(公告)号：US07154126B2
公开(公告)日：2006-12-26
申请号：US10500573
申请日：2003-07-11
申请人： Hiroshi Aruga , Shinichi Takagi , Kiyohide Sakai
发明人： Hiroshi Aruga , Shinichi Takagi , Kiyohide Sakai
IPC分类号： G02B6/42 , H01S5/022
CPC分类号： G02B6/4292 , G02B6/4201 , G02B6/4204 , G02B6/4206 , G02B6/421 , G02B6/4279 , H01L2224/48091 , H01S5/02212 , H01S5/02216 , H01S5/02248 , H01S5/02284 , H01S5/0427 , H01S5/06226 , H01L2924/00014
摘要： Includes a stem with a hole, a dielectric sealed into the hole of the stem and including a pair of pin insertion holes, and a pair of high frequency signal pins that penetrate and fit into the pair of pin insertion holes of the dielectric, and constituting differential lines connected to an optical semiconductor element.
摘要翻译：包括具有孔的杆，密封在杆的孔中的电介质，并且包括一对针插入孔和一对穿透并配合到电介质的一对针插入孔中的高频信号针，并且构成连接到光学半导体元件的差分线。

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