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11. 发明申请

US20100009079A1 Method for processing substrate and substrate processing apparatus 审中-公开
标题翻译：基板和基板处理装置的处理方法
公开(公告)号：US20100009079A1
公开(公告)日：2010-01-14
申请号：US12457779
申请日：2009-06-22
申请人： Hirohisa Yamazaki , Yuji Takebayashi , Masanori Sakai , Tsutomu Kato
发明人： Hirohisa Yamazaki , Yuji Takebayashi , Masanori Sakai , Tsutomu Kato
IPC分类号： C23C16/455 , C23C16/40
CPC分类号： H01L21/0228 , C23C16/405 , C23C16/4412 , C23C16/45527 , C23C16/45557 , H01L21/02112 , H01L21/02205
摘要： There is provided a substrate processing method, comprising the steps of: supplying source gas into a processing chamber in which substrates are accommodated; removing the source gas and an intermediate body of the source gas remained in the processing chamber; supplying ozone into the processing chamber in a state of substantially stopping exhaust of an atmosphere in the processing chamber; and removing the ozone and the intermediate body of the ozone remained in the processing chamber; with these steps repeated multiple number of times, to thereby form an oxide film on the surface of the substrates by supplying the source gas and the ozone alternately so as not to be mixed with each other.
摘要翻译：提供了一种基板处理方法，包括以下步骤：将源气体供应到容纳基板的处理室中; 去除源气体和源气体的中间体残留在处理室中; 在基本上停止排出处理室中的气氛的状态下将臭氧供给到处理室中; 并且除去臭氧和中间体的臭氧残留在处理室中; 这些步骤重复多次，由此通过交替地供给源气体和臭氧而不使其彼此混合而在基板的表面上形成氧化膜。

12. 发明申请

US20090197424A1 Substrate processing apparatus and method for manufacturing semiconductor device 审中-公开
标题翻译：基板处理装置及半导体装置的制造方法
公开(公告)号：US20090197424A1
公开(公告)日：2009-08-06
申请号：US12320577
申请日：2009-01-29
申请人： Masanori Sakai , Yuji Takebayashi , Tsutomu Kato , Shinya Sasaki , Hirohisa Yamazaki
发明人： Masanori Sakai , Yuji Takebayashi , Tsutomu Kato , Shinya Sasaki , Hirohisa Yamazaki
IPC分类号： H01L21/30 , C23C16/54
CPC分类号： C23C16/4584 , C23C16/405 , C23C16/4412 , C23C16/45546 , C23C16/45591
摘要： A substrate processing apparatus according to the present invention promotes supplying gases to spaces between adjacent substrates without reducing the number of substrates which can be collectively processed. The substrate processing apparatus includes: a processing chamber for storing and processing substrates stacked in multiple stages in horizontal posture; at least one processing gas supply nozzle which extends running along an inner wall of the processing chamber in the stacking direction of the substrates and supplies a processing gas to the inside of the processing chamber; a pair of inactive gas supply nozzles which are provided so as to extend running along the inner wall of the processing chamber in the stacking direction of the substrates and so as to sandwich the processing gas supply nozzle from both sides thereof along the circumferential direction of the substrates and which supply the inactive gas to the inside of the processing chamber; and an exhaust line for exhausting the inside of the processing chamber.
摘要翻译：根据本发明的基板处理装置促进向相邻基板之间的空间供应气体，而不减少可以共同处理的基板的数量。基板处理装置包括：处理室，用于以水平姿态存储和处理以多级堆叠的基板; 至少一个处理气体供给喷嘴，其沿着所述处理室的内壁在所述基板的层叠方向上延伸，并且将处理气体供给到所述处理室的内部; 一对非活性气体供给喷嘴，沿着基板的堆叠方向沿着处理室的内壁延伸，并且沿着该基板的圆周方向从其两侧夹着处理气体供给喷嘴并且将惰性气体供应到处理室的内部; 以及用于排出处理室内部的排气管线。

13. 发明授权

US08828141B2 Substrate processing apparatus and method for manufacturing semiconductor device 有权
标题翻译：基板处理装置及半导体装置的制造方法
公开(公告)号：US08828141B2
公开(公告)日：2014-09-09
申请号：US12379420
申请日：2009-02-20
申请人： Masanori Sakai , Yuji Takebayashi , Tsutomu Kato , Shinya Sasaki , Hirohisa Yamazaki
发明人： Masanori Sakai , Yuji Takebayashi , Tsutomu Kato , Shinya Sasaki , Hirohisa Yamazaki
IPC分类号： C23C16/455 , C23C16/458 , C23C16/46 , C23C16/52 , C23F1/00 , H01L21/306 , C23C16/40 , C23C16/44 , C23C16/06 , C23C16/22
CPC分类号： C23C16/4584 , C23C16/405 , C23C16/4412 , C23C16/45546 , C23C16/45591
摘要： A substrate processing apparatus of the present invention comprises: a processing chamber for storing and processing substrates stacked in multiple stages in horizontal posture; a processing gas supply unit for supplying two or more types of the processing gases to the inside of the processing chamber; an inactive gas supply unit for supplying an inactive gas to the inside of the processing chamber; and an exhaust unit for exhausting an atmosphere of the inside of the processing chamber, wherein the processing gas supply unit has at least two processing gas supply nozzles which extend running along an inner wall of the processing chamber in the stacking direction of the substrates and supply the processing gas to the inside of the processing chamber, and the inactive gas supply unit has a pair of inactive gas supply nozzles which are provided so as to extend running along the inner wall of the processing chamber in the stacking direction of the substrates and so as to sandwich at least one processing gas supply nozzle of the at least two processing gas supply nozzles from both sides thereof, along the circumferential direction of the substrates, and which supply the inactive gas to the inside of the processing chamber.
摘要翻译：本发明的基板处理装置包括：处理室，用于以水平姿态多层堆放和处理基板; 处理气体供应单元，用于将两种或多种类型的处理气体供应到处理室的内部; 用于向处理室的内部供应惰性气体的非活性气体供应单元; 以及用于排出处理室内部的气氛的排气单元，其中处理气体供应单元具有至少两个处理气体供应喷嘴，所述处理气体供应喷嘴沿着基板的堆叠方向沿处理室的内壁延伸并且供应处理室内部的处理气体和非活性气体供给单元具有一对非活性气体供给喷嘴，其设置成沿着基板的堆叠方向沿着处理室的内壁延伸，因此从而沿着基板的圆周方向从其两侧夹着至少两个处理气体供给喷嘴的至少一个处理气体供给喷嘴，并将惰性气体供给到处理室的内部。

14. 发明申请

US20090130860A1 Method of manufacturing a semiconductor device and processing apparatus 有权
标题翻译：制造半导体器件和处理装置的方法
公开(公告)号：US20090130860A1
公开(公告)日：2009-05-21
申请号：US12216596
申请日：2008-07-08
申请人： Hironobu Miya , Eisuke Nishitani , Yuji Takebayashi , Masanori Sakai , Hirohisa Yamazaki , Toshinori Shibata , Minoru Inoue
发明人： Hironobu Miya , Eisuke Nishitani , Yuji Takebayashi , Masanori Sakai , Hirohisa Yamazaki , Toshinori Shibata , Minoru Inoue
IPC分类号： H01L21/31 , C23C16/00
CPC分类号： C23C16/4405 , H01L21/3141 , H01L21/31645
摘要： To remove the deposit including a high dielectric constant film deposited on an inside of a processing chamber, by using a cleaning gas activated only by heat. The method includes the steps of: loading a substrate or a plurality of substrates into the processing chamber; performing processing to deposit the high dielectric constant film on the substrate by supplying processing gas into the processing chamber; unloading the processed substrate from the inside of the processing chamber; and cleaning the inside of the processing chamber by supplying a halide gas and an oxygen based gas into the processing chamber, and removing the deposit including the high dielectric constant film deposited on the inside of the processing chamber, and in the step of cleaning the inside of the processing chamber, the concentration of the oxygen based gas in the halide gas and the oxygen based gas is set to be less than 7%.
摘要翻译：为了除去沉积在处理室内部的高介电常数膜的沉积物，通过使用仅通过加热活化的清洗气体。该方法包括以下步骤：将衬底或多个衬底装载到处理室中; 进行处理，通过向处理室供给处理气体，将高介电常数膜沉积在基板上; 从处理室的内部卸载经处理的基板; 以及通过向所述处理室中供给卤化物气体和氧气基气体来清洁所述处理室的内部，以及去除包括沉积在所述处理室内部的所述高介电常数膜的沉积物，以及在所述处理室的内部清洁步骤处理室中的卤化物气体和氧气基气体中的氧基气体的浓度设定为小于7％。

15. 发明申请

US20090071505A1 CLEANING METHOD AND SUBSTRATE PROCESSING APPARATUS 审中-公开
标题翻译：清洁方法和基板处理装置
公开(公告)号：US20090071505A1
公开(公告)日：2009-03-19
申请号：US12188440
申请日：2008-08-08
申请人： Hironobu Miya , Yuji Takebayashi , Masanori Sakai , Shinya Sasaki , Hirohisa Yamazaki , Atsuhiko Suda
发明人： Hironobu Miya , Yuji Takebayashi , Masanori Sakai , Shinya Sasaki , Hirohisa Yamazaki , Atsuhiko Suda
IPC分类号： B08B7/00 , C23C16/00
CPC分类号： C23C16/4405 , B08B7/0035
摘要： Provided is a cleaning method which can efficiently remove a film, such as a high dielectric constant oxide film, which is difficult to be etched by a fluorine-containing gas alone. As a cleaning method of a substrate processing apparatus which forms a desired film on a wafer by supplying a source gas, there is provided a cleaning method for removing a film attached to the inside of a processing chamber. The cleaning method includes: a step of supplying a halogen-containing gas into the processing chamber; and a step of supplying a fluorine-containing gas into the processing chamber, after starting the supply of the halogen-containing gas, wherein, in the step of supplying the fluorine-containing gas, the fluorine-containing gas is supplied while supplying the halogen-containing gas into the processing chamber.
摘要翻译：本发明提供一种能够有效地除去难以仅通过含氟气体进行蚀刻的高介电常数氧化膜等的膜的清洗方法。作为通过供给源气体在晶片上形成期望的膜的基板处理装置的清洗方法，提供了一种用于除去附着在处理室内部的膜的清洗方法。清洗方法包括：向处理室供给含卤素气体的步骤; 以及在开始供给含卤素气体之后向处理室供给含氟气体的步骤，其中在供给含氟气体的步骤中，供应含氟气体，同时供给卤素的气体进入处理室。

16. 发明申请

US20150008210A1 BOTTLE 审中-公开
标题翻译：瓶子
公开(公告)号：US20150008210A1
公开(公告)日：2015-01-08
申请号：US14371040
申请日：2012-12-20
申请人： Tadayoshi Oshino , Hiromichi Saito , Hirohisa Yamazaki , Takuya Nishimura
发明人： Tadayoshi Oshino , Hiromichi Saito , Hirohisa Yamazaki , Takuya Nishimura
IPC分类号： B65D1/02 , B65D1/44
CPC分类号： B65D1/0276 , B65D1/0223 , B65D1/0261 , B65D1/44 , B65D2501/0027 , B65D2501/0036
摘要： The present invention is a bottle that is formed from a synthetic resin material in a cylindrical shape having a bottom at one end, including: a plurality of circumferential grooves that extend continuously around the entire circumference of a body portion and are formed at a distance from each other in a vertical direction. The circumferential grooves extend cyclically in a circumferential direction while undulating in the vertical direction when viewed from the side of the body portion as to form wave patterns, and the respective phases of circumferential grooves that are mutually adjacent to each other in the vertical direction are offset from each other.
摘要翻译：本发明是由一端具有底部的圆筒形合成树脂材料形成的瓶子，包括：多个周向槽，其围绕主体部分的整个圆周连续延伸，并形成在距离彼此在垂直方向。周向槽沿着圆周方向周向延伸，同时沿着主体部分的侧面沿垂直方向起伏形成波形，并且在垂直方向上彼此相邻的周向槽的相位偏移从彼此。

17. 发明申请

US20120319252A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法，衬底加工设备和半导体器件
公开(公告)号：US20120319252A1
公开(公告)日：2012-12-20
申请号：US13575798
申请日：2011-01-20
申请人： Hirohisa Yamazaki
发明人： Hirohisa Yamazaki
IPC分类号： H01L29/06 , H01L21/66 , C23C16/455 , H01L21/316
CPC分类号： H01L21/0228 , C23C16/40 , C23C16/401 , C23C16/45531 , H01L21/02148
摘要： A method for manufacturing a semiconductor device includes performing a cycle a predetermined number of times to form a film on a substrate. The cycle includes feeding a first material containing a first element, to be adsorbed on a substrate surface, to a processing chamber where the substrate is accommodated; feeding a second material containing a second element, adsorbed on the substrate surface, to the processing chamber after the adsorption of the first material; feeding a third material containing a third element to the processing chamber, so that the substrate surface is modified; and removing an atmosphere in the processing chamber. A content of the second element in the film is controlled by adjusting an adsorption quantity of the first material and an adsorption quantity of the second material with respect to a saturated adsorption quantity of the first material adsorbed on the substrate surface.
摘要翻译：一种半导体器件的制造方法包括：在基板上进行预定次数的循环，以形成膜。该循环包括将包含待吸附在基板表面上的第一元件的第一材料馈送到容纳基板的处理室; 在第一材料吸附之后，将含有吸附在基材表面上的第二元素的第二材料供给到处理室; 将含有第三元素的第三材料供给到所述处理室，使得所述基板表面被修改; 并去除处理室中的气氛。通过相对于吸附在基板表面上的第一材料的饱和吸附量调节第一材料的吸附量和第二材料的吸附量来控制膜中的第二元素的含量。

18. 发明授权

US06686281B2 Method for fabricating a semiconductor device and a substrate processing apparatus 有权
标题翻译：半导体装置的制造方法以及基板处理装置
公开(公告)号：US06686281B2
公开(公告)日：2004-02-03
申请号：US10234520
申请日：2002-09-05
申请人： Hirohisa Yamazaki , Takaaki Noda
发明人： Hirohisa Yamazaki , Takaaki Noda
IPC分类号： H01L21311
CPC分类号： C23C16/45574 , C23C16/30 , C23C16/45578 , C30B25/02 , C30B29/52 , H01L21/67017 , Y10S438/933 , Y10S438/935 , Y10S438/936
摘要： A substrate processing apparatus for forming a boron doped silicon-germanium film on one or more substrates in a reaction furnace of a low pressure CVD apparatus uses a mixture gas of GeH4 and SiH4 as a reaction gas, and BCl3 as a doping gas. The substrate processing apparatus includes a plurality of gas outlets for supplying GeH4 at different locations in the reaction tube and a doping gas line for supplying BCl3 at least at an upstream side of gas flow in the reaction tube.
摘要翻译：在低压CVD装置的反应炉中，在一个或多个基板上形成硼掺杂的硅 - 锗膜的基板处理装置使用GeH 4和SiH 4的混合气体作为反应气体，BCl3作为掺杂气体。基板处理装置包括用于在反应管中的不同位置处供给GeH 4的多个气体出口和用于至少在反应管中的气流的上游侧供给BCl 3的掺杂气体管线。

19. 发明授权

US10214313B2 Bottle 有权
公开(公告)号：US10214313B2
公开(公告)日：2019-02-26
申请号：US14371040
申请日：2012-12-20
申请人： Tadayoshi Oshino , Hiromichi Saito , Hirohisa Yamazaki , Takuya Nishimura
发明人： Tadayoshi Oshino , Hiromichi Saito , Hirohisa Yamazaki , Takuya Nishimura
IPC分类号： B65D1/00 , B65D1/02 , B65D1/44
摘要： The present invention is a bottle that is formed from a synthetic resin material in a cylindrical shape having a bottom at one end, including: a plurality of circumferential grooves that extend continuously around the entire circumference of a body portion and are formed at a distance from each other in a vertical direction. The circumferential grooves extend cyclically in a circumferential direction while undulating in the vertical direction when viewed from the side of the body portion as to form wave patterns, and the respective phases of circumferential grooves that are mutually adjacent to each other in the vertical direction are offset from each other.

20. 发明授权

US08741063B2 Substrate processing apparatus and method of manufacturing semiconductor device 有权
标题翻译：基板处理装置及半导体装置的制造方法
公开(公告)号：US08741063B2
公开(公告)日：2014-06-03
申请号：US12510572
申请日：2009-07-28
申请人： Hirohisa Yamazaki , Satoshi Okada , Tsutomu Kato
发明人： Hirohisa Yamazaki , Satoshi Okada , Tsutomu Kato
IPC分类号： C23C16/458
CPC分类号： F16L25/00 , C23C16/405 , C23C16/4405 , C23C16/4408 , C23C16/45527 , C23C16/45546 , H01L21/02271
摘要： Substrate processing uniformity is improved in the surfaces of wafers and between the wafers. A substrate processing apparatus including: a substrate holder including a substrate stacking part configured to hold a plurality of vertically stacked substrates and a cylinder part disposed under the substrate stacking part to enclose a lower portion of the substrate holder; an inner tube configured to accommodate the substrate holder wherein a space between the cylinder part and a lower portion of the inner tube is smaller than a space between the substrate stacking part and an upper portion of the inner tube; an outer tube configured to enclose the inner tube with a gap therebetween; a gas nozzle installed in the inner tube; a gas injection hole disposed in the gas nozzle; a source gas supply unit configured to supply a source gas to an inside of the inner tube through the gas nozzle; a gas exhaust outlet disposed in a sidewall of the inner tube such that the inside of the inner tube communicates with the gap through the plurality of gas exhaust outlets; an exhaust unit configured to exhaust the gap so as to create a gas stream inside the inner tube in a direction from the gas injection hole to the plurality of gas exhaust outlets.
摘要翻译：晶片表面和晶片之间的基板加工均匀性得到改善。一种基板处理装置，包括：基板保持器，其包括被配置为保持多个垂直堆叠的基板的基板堆叠部分和设置在所述基板堆叠部分下方以包围所述基板保持器的下部的圆筒部分; 内管，其构造成容纳所述基板保持器，其中所述筒部与所述内管的下部之间的间隔小于所述基板堆叠部与所述内管的上部之间的间隔; 外管，其构造成围绕内管间隙; 安装在内管中的气体喷嘴; 设置在所述气体喷嘴中的气体注入孔; 源气体供给单元，其构造成通过所述气体喷嘴将源气体供给到所述内管的内部; 排气出口，其设置在所述内管的侧壁中，使得所述内管的内部通过所述多个排气出口与所述间隙连通; 排气单元，其构造成排出所述间隙，以在从所述气体注入孔到所述多个排气出口的方向上在所述内管内产生气流。

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