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    • 16. 发明授权
    • Method and apparatus of forming thin films
    • 形成薄膜的方法和装置
    • US5755888A
    • 1998-05-26
    • US518267
    • 1995-08-23
    • Hideo ToriiEiji FujiiShigenori HayashiRyoichi Takayama
    • Hideo ToriiEiji FujiiShigenori HayashiRyoichi Takayama
    • C23C14/00C23C14/56C23C16/44C23C16/54C30B25/14H01L21/203H01L21/205H01L21/285C23C16/00
    • C23C14/568C23C16/4412C23C16/54C30B25/14
    • An apparatus of forming thin films, which is small and requires a short thin-film formation time, is provided which comprises at least one physical vapor deposition device and at least one chemical vapor deposition device, wherein said physical vapor deposition device and said chemical vapor deposition device are provided with an exhaust pipe respectively for connection with a common exhaust means and an exhaust switching means. A method of forming thin films using this apparatus is also provided. According to the configuration in which the exhaust switching means is connected via exhaust pipes to the physical vapor deposition device, to the chemical vapor deposition device, and to the exhaust means, this apparatus can be accomplished in a small size which has at least two chambers and one exhaust means. In this way, thin films can be formed in a short thin-film formation time with a small apparatus, since vapor of a starting material which is led in at the time of chemical vapor deposition does not enter the physical vapor deposition device.
    • 提供一种形成薄膜并需要短的薄膜形成时间的装置,其包括至少一个物理气相沉积装置和至少一个化学气相沉积装置,其中所述物理气相沉积装置和所述化学气相 沉积装置设置有分别用于与公共排气装置和排气开关装置连接的排气管。 还提供了使用该装置形成薄膜的方法。 根据其中排气切换装置经由排气管连接到物理气相沉积装置,化学气相沉积装置和排气装置的结构,该装置可以实现为具有至少两个室的小尺寸 和一个排气装置。 这样,由于在化学气相沉积时引入的原料的蒸气不会进入物理气相沉积装置,因此可以用小的装置在短的薄膜形成时间内形成薄膜。