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11. 发明授权

US6013162A Method of handling a substrate after sputtering and sputtering apparatus 失效
标题翻译：溅射和溅射装置处理基板的方法
公开(公告)号：US6013162A
公开(公告)日：2000-01-11
申请号：US859720
申请日：1997-05-21
申请人： Masahiko Kobayashi , Nobuyuki Takahashi
发明人： Masahiko Kobayashi , Nobuyuki Takahashi
IPC分类号： C23C14/34 , C23C14/50 , C23C14/54 , C23C14/56 , C23C14/58
CPC分类号： C23C14/58 , C23C14/541 , C23C14/566
摘要： A substrate which has been heated to a predetermined temperature by a heating unit during sputtering is transferred into an unload-lock chamber having a vacuum pump system and a vent gas introducing system. The unload-lock chamber is provided with a cooling stage which makes surface contact with the substrate so as to forcedly cool the substrate to a predetermined temperature. The substrate is placed on the cooling stage and forcedly cooled. After the substrate is cooled to the predetermined temperature or lower, the vent gas introducing system is operated so that the interior of the unload-lock chamber is returned to the atmospheric pressure ambient. Since the substrate under a high temperature condition does not make contact with the atmospheric pressure ambient, film properties are prevented from being varied.
摘要翻译：在溅射期间通过加热单元被加热到预定温度的基板被转移到具有真空泵系统和排放气体引入系统的卸载锁定室中。卸载锁定室设置有冷却台，其与基板表面接触，以将基板强制冷却至预定温度。将基板放置在冷却台上并强制冷却。在将基板冷却至预定温度或更低温度之后，排气引入系统被操作，使得卸载锁定室的内部返回到大气压环境。由于在高温条件下的基板不与大气压环境接触，所以防止了膜性能的变化。

12. 发明授权

US5968327A Ionizing sputter device using a coil shield 失效
标题翻译：使用线圈屏蔽的电离溅射装置
公开(公告)号：US5968327A
公开(公告)日：1999-10-19
申请号：US22623
申请日：1998-02-12
申请人： Masahiko Kobayashi , Nobuyuki Takahashi
发明人： Masahiko Kobayashi , Nobuyuki Takahashi
IPC分类号： C23C14/34 , H01J37/32 , H01J37/34 , H01L21/203 , H01L21/285
CPC分类号： H01J37/321 , H01J37/3408
摘要： A coil shield 64 that blocks the arrival at a substrate 50 of the material released by sputtering is provided to a high frequency coil 61 provided such that it surrounds the ionization space between the target 2 and the substrate holder 5. The coil shield 64 is made of metal, and is grounded, which prevents plasma formation in unnecessary places. The coil shield 64 is hollow, gas blowing holes are uniformly formed over the inner surface facing the ionization space, and the gas is flown toward the ionization space.
摘要翻译：提供了阻挡到通过溅射释放的材料到达基板50的线圈屏蔽件64，其设置成使其围绕靶材2和基板保持件5之间的电离空间。高频线圈61被制成的金属，并且接地，这防止在不必要的地方形成等离子体。线圈护罩64是中空的，气体吹出孔均匀地形成在面向电离空间的内表面上，并且气体朝向电离空间流动。

13. 发明授权

US5439574A Method for successive formation of thin films 失效
标题翻译：连续形成薄膜的方法
公开(公告)号：US5439574A
公开(公告)日：1995-08-08
申请号：US277950
申请日：1994-07-19
申请人： Masahiko Kobayashi , Nobuyuki Takahashi
发明人： Masahiko Kobayashi , Nobuyuki Takahashi
IPC分类号： C23C14/35 , H01J37/34 , C23C14/34 , H01L21/44
CPC分类号： C23C14/351 , H01J37/3266 , H01J37/3405
摘要： The present invention provides a method for forming thin films successively by magnetron sputtering, a method achieving uniform thickness distribution of each film on a substrate by varying the composition of process gas with the vacuum chamber and a structural configuration therein kept unchanged.In the magnetron sputtering wherein thin films composed of particles sputtered out of the target [2] are deposited on a substrate surface with plasma maintained by applying perpendicularly intersecting electric and magnetic fields in the space defined between the target and substrate and by introducing process gas into the chamber, the magnetic flux density is varied with the composition ratio of process gas introduced into the vacuum chamber [1] by attaching magnetic field generators [3], [14]: for applying the magnetic field so that the magnetic flux density in the electrode space is adjustable.
摘要翻译：本发明提供了一种通过磁控溅射依次形成薄膜的方法，通过改变处理气体与真空室的组成并在其中保持不变的方法，在基板上实现每个薄膜均匀厚度分布的方法。在磁控溅射中，其中由溅射出目标[2]的颗粒组成的薄膜沉积在基板表面上，等离子体通过在限定在靶和基板之间的空间中施加垂直相交的电场和磁场而维持，并且通过将工艺气体引入通过附加磁场发生器[3]，[14]，磁通密度随着引入真空室的工艺气体的组成比而变化[1]：用于施加磁场，使得磁通密度在电极空间可调。

14. 发明授权

US06200432B1 Method of handling a substrate after sputtering and sputtering apparatus 有权
标题翻译：溅射和溅射装置处理基板的方法
公开(公告)号：US06200432B1
公开(公告)日：2001-03-13
申请号：US09437227
申请日：1999-11-10
申请人： Masahiko Kobayashi , Nobuyuki Takahashi
发明人： Masahiko Kobayashi , Nobuyuki Takahashi
IPC分类号： C23C1434
CPC分类号： C23C14/58 , C23C14/541 , C23C14/566
摘要： A substrate which has been heated to a predetermined temperature by a heating unit during sputtering is transferred into an unload-lock chamber having a vacuum pump system and a vent gas introducing system. The unload-lock chamber is provided with a cooling stage which makes surface contact with the substrate so as to forcedly cool the substrate to a predetermined temperature. The substrate is placed on the cooling stage and forcedly cooled. After the substrate is cooled to the predetermined temperature or lower, the vent gas introducing system is operated so that the interior of the unload-lock chamber is returned to the atmospheric pressure ambient. Since the substrate under a high temperature condition does not make contact with the atmospheric pressure ambient, film properties are prevented from being varied.
摘要翻译：在溅射期间通过加热单元被加热到预定温度的基板被转移到具有真空泵系统和排放气体引入系统的卸载锁定室中。卸载锁定室设置有冷却台，其与基板表面接触，以将基板强制冷却至预定温度。将基板放置在冷却台上并强制冷却。在将基板冷却至预定温度或更低温度之后，排气引入系统被操作，使得卸载锁定室的内部返回到大气压环境。由于在高温条件下的基板不与大气压环境接触，所以防止了膜性能的变化。

15. 发明授权

US06030510A Hot reflow sputtering method and apparatus 有权
标题翻译：热回流溅射法和设备
公开(公告)号：US06030510A
公开(公告)日：2000-02-29
申请号：US151738
申请日：1998-09-11
申请人： Masahiko Kobayashi , Nobuyuki Takahashi
发明人： Masahiko Kobayashi , Nobuyuki Takahashi
IPC分类号： C23C14/14 , C23C14/04 , C23C14/34 , C23C14/35 , C23C14/50 , C23C14/54 , C23C14/56 , H01L21/203 , H01L21/285 , H01L21/768
CPC分类号： C23C14/564 , C23C14/046 , C23C14/35 , C23C14/50 , C23C14/541 , H01J37/3405 , H01L21/76877
摘要： A method and apparatus for facilitating high-quality hot reflow sputtering with no occurrence of voids while reducing the processing time by rapid heating of the substrate. The method comprises two steps. In the first step, a thin base film 81 of aluminum is formed on the side and bottom surfaces of a minute hole 90 formed in the surface of a substrate 9. Substrate 9 is heated to a first temperature of no more than 100.degree. C. at which it is possible to prevent gaps occurring in the base film 81. In the second step, the hole is filled in with aluminum by depositing a further film of aluminum 82 inside hole 90 and causing it to reflow. Substrate 9 is heated to a second temperature which is higher than the first temperature. The hot reflow sputtering apparatus is equipped with an electrostatic attraction mechanism 43, which uses static electricity to grip substrate 9 against a substrate holder 4 provided with an indentation 40 in the substrate mounting surface thereof, and a pressurizing gas introduction system 42 which introduces a pressurizing gas into the indentation 40. A control unit 47 controls the apparatus so that neither electrostatic attraction mechanism 43 nor pressurizing gas introduction system 42 are operated in the first step. In the second step the pressurizing gas introduction system 42 is operated after the electrostatic attraction mechanism 43 has been operated.
摘要翻译：一种用于在不发生空隙的情况下促进高质量热回流溅射的方法和装置，同时通过快速加热衬底减少处理时间。该方法包括两个步骤。在第一步骤中，在基板9的表面形成的微小孔90的侧面和底面上形成有薄的铝基底膜81.将基板9加热至不超过100℃的第一温度。在此可以防止在基膜81中发生间隙。在第二步骤中，通过在孔90内沉积另外的铝82膜并使其回流，用铝填充孔。将基板9加热到高于第一温度的第二温度。热回流溅射装置配备有静电吸引机构43，该静电吸引机构43使用静电来将基板9抵靠在其基板安装表面中设置有凹口40的基板保持件4和加压气体导入系统42，气体进入压痕40.控制单元47控制装置，使得静电吸引机构43和加压气体导入系统42都不在第一步骤中操作。在第二步骤中，在静电吸引机构43被操作之后，加压气体引入系统42被操作。

16. 发明授权

US5470451A Sputtering apparatus 失效
标题翻译：溅射装置
公开(公告)号：US5470451A
公开(公告)日：1995-11-28
申请号：US249271
申请日：1994-05-25
申请人： Masahiko Kobayashi , Nobuyuki Takahashi
发明人： Masahiko Kobayashi , Nobuyuki Takahashi
IPC分类号： C23C14/34 , H01J37/32 , H01J37/34 , C23C14/52 , C23C14/54
CPC分类号： H01J37/3244 , C23C14/34 , H01J37/34 , H01J37/3441
摘要： A sputtering apparatus in which transfer of a substrate and formation of a thin film on the substrate are performed in a face-up manner, the apparatus comprising a cylindrical shield member provided so as to surround a plasma discharge space in a substantially tightly enclosing state, and a process gas inlet means having gas outlet openings formed in an inner surface thereof. The cylindrical shield member is provided in its inside with a ring-like or cylindrical path so as to communicate with the process gas inlet means and so as to have a plurality of gas outlet openings. Further, a hole for inserting a pressure gauge is formed in the inner surface of the shield member.
摘要翻译：一种溅射装置，其中基板的转移和基板上的薄膜的形成是以面朝上的方式执行的，该装置包括一个以基本上紧密包围的状态包围等离子体放电空间的圆筒形屏蔽件，以及具有形成在其内表面中的气体出口的工艺气体入口装置。圆筒形屏蔽构件在其内部设置有环状或圆柱形路径，以便与处理气体入口装置连通并且具有多个气体出口。此外，在屏蔽部件的内表面形成有用于插入压力计的孔。

17. 发明授权

US5340460A Vacuum processing equipment 失效
标题翻译：真空加工设备
公开(公告)号：US5340460A
公开(公告)日：1994-08-23
申请号：US746920
申请日：1991-08-19
申请人： Masahiko Kobayashi , Hirobumi Takemura , Tetsuo Ishida , Nobuyuki Takahashi
发明人： Masahiko Kobayashi , Hirobumi Takemura , Tetsuo Ishida , Nobuyuki Takahashi
IPC分类号： C23C14/54 , C23C14/00 , C23C14/56 , C23C14/34
CPC分类号： C23C14/564
摘要： A vacuum processing equipment is disclosed, which comprises a vacuum chamber and main and fore vacuum pumping mechanism for pumping down the vacuum chamber. The fore vacuum pumping mechanism includes a cooling means and a residual gas trapping means coupled to the cooling means. The cooling means is provided outside the vacuum chamber. The residual gas trapping means is provided in a zone of the vacuum chamber free from interference with the vacuum processing.
摘要翻译：公开了一种真空处理设备，其包括真空室和用于抽空真空室的主和真空抽真空机构。前级真空抽吸机构包括冷却装置和联接到冷却装置的残余气体捕集装置。冷却装置设置在真空室的外部。残余气体捕集装置设置在真空室的区域中，不受真空处理的干扰。

18. 发明授权

US09412198B2 Collision determination device and collision determination program 有权
公开(公告)号：US09412198B2
公开(公告)日：2016-08-09
申请号：US13144702
申请日：2009-09-10
申请人： Akira Miyata , Nobuyuki Takahashi , Toshihiro Azuma
发明人： Akira Miyata , Nobuyuki Takahashi , Toshihiro Azuma
IPC分类号： G06F7/60 , G06F17/10 , G06T17/00 , B25J9/16 , G05B19/4061 , G06F17/50
摘要： A collision determination device includes a target cell designation unit that designates a target cell for a voxel model which represents the shape of a first object. A determination test point generation unit generates determination test points for the target cell. A spatial curve creation unit creates a spatial curve as the trajectory curve of a determination test point. A curve intersecting determination unit determines whether or not each boundary element of a boundary representation model representing the shape of a second object is intersecting the spatial curve. A distance computation unit computes the closest distance from the spatial curve to the boundary surface of the boundary representation model. A collision determination unit determines, based on the determination result and the computation result, whether there is a possibility of collision between both objects.

19. 发明授权

US08017058B2 Castable refractory powder composition, premixed material prepared therefrom, method for casting premixed material, and hardened refractory body obtained therefrom 有权
$Castable refractory powder composition, premixed material prepared therefrom, method for casting premixed material, and hardened refractory body obtained therefrom$
标题翻译：铸造耐火粉末组合物，由其制备的预混合材料，浇注预混材料的方法和由其获得的硬化耐火材料体
公开(公告)号：US08017058B2
公开(公告)日：2011-09-13
申请号：US12240411
申请日：2008-09-29
申请人： Jun Oba , Kunio Tanaka , Nobuyuki Takahashi , Takashi Fujisaki
发明人： Jun Oba , Kunio Tanaka , Nobuyuki Takahashi , Takashi Fujisaki
IPC分类号： B28B3/00
CPC分类号： C04B35/62665 , C04B28/06 , C04B35/66 , C04B2235/3206 , C04B2235/3217 , C04B2235/3222 , C04B2235/3418 , C04B2235/3873 , C04B2235/424 , C04B2235/5427 , C04B2235/5436 , C04B14/30 , C04B20/0076 , C04B2103/10 , C04B2103/20 , C04B22/0093 , C04B24/06 , C04B40/0028 , C04B40/0658 , C04B22/062 , C04B24/2641 , C04B2103/0094 , C04B22/0013 , C04B22/085 , C04B22/10 , C04B22/16
摘要： A premixed material is obtained by tempering a castable refractory powder composition comprising refractory aggregate, fine refractory powder, alumina cement, a dispersing agent and an alumina cement hydration stopper with water. The hydration stopper is acidic in a state of an aqueous solution. The amount of the hydration stopper is controlled such that the premixed material has a pH of 2 to 7. Immediately after adding and mixing an alumina cement hydration starter to the premixed material, the resultant mixture is cast into a mold. The addition of the hydration starter can be carried out 5 days or more after the production of the premixed material.
摘要翻译：通过回火具有耐火骨料，精细耐火粉末，氧化铝水泥，分散剂和氧化铝水泥水合塞子的可浇注耐火材料组合物与水回收来获得预混合材料。水合塞在水溶液状态下呈酸性。控制水合塞的量使得预混合材料的pH值为2-7。在将氧化铝水泥水化起动剂加入并混合到预混合材料之后，将所得混合物立即浇注到模具中。水合起始剂的添加可以在预混材料生产后5天或更长时间进行。

20. 发明授权

US07881035B2 High-pressure fuel pump drive circuit for engine 有权
标题翻译：发动机高压燃油泵驱动电路
公开(公告)号：US07881035B2
公开(公告)日：2011-02-01
申请号：US11833677
申请日：2007-08-03
申请人： Nobuyuki Takahashi , Takashi Okamoto , Takuya Mayuzumi
发明人： Nobuyuki Takahashi , Takashi Okamoto , Takuya Mayuzumi
IPC分类号： H01H9/00
CPC分类号： F02D41/20 , F02D41/406 , F02D2041/2041 , F02M59/466 , F02M2037/085 , F04B49/06 , F04B49/10 , H01F7/1811
摘要： There is provided a high-pressure fuel pump drive circuit for manipulating the electric current to be passed to a solenoid coil for controlling a high-pressure pump. This circuit is characterized in that a first switching element, the solenoid coil and a second switching element are connected in series with each other in a rout from a source voltage side to the ground side, that a flywheel diode for passing electric current to a power source is disposed parallel with the solenoid and with the first switching element, and that a Zener diode connected with the power source is disposed parallel with the second switching element, wherein a counter electromotive force to be developed at the opposite ends of solenoid coil on the occasion when the second switching element is changed from ON to OFF is consumed by the flywheel diode provided that the first switching element is in a state of ON, and the counter electromotive force is more rapidly consumed by the Zener diode provided that the first switching element is turned OFF.
摘要翻译：提供了用于操纵要通过到用于控制高压泵的螺线管线圈的电流的高压燃料泵驱动电路。该电路的特征在于，第一开关元件，螺线管线圈和第二开关元件在从源极电压侧到接地侧的路径中彼此串联连接，用于将电流传递到电力的续流二极管源极与螺线管和第一开关元件平行设置，并且与电源连接的齐纳二极管与第二开关元件平行设置，其中在电磁线圈的相对端处形成的反电动势只要第一开关元件处于ON状态，并且反电动势被齐纳二极管更快地消耗，则由续流二极管消耗第二开关元件由ON变为OFF的情况，只要第一开关元件关闭。

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