会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 12. 发明授权
    • Semiconductor device and manufacturing method thereof
    • 半导体装置及其制造方法
    • US07081641B2
    • 2006-07-25
    • US10786097
    • 2004-02-26
    • Masahiro KawasakiShuji ImazekiMasahiko Ando
    • Masahiro KawasakiShuji ImazekiMasahiko Ando
    • H01L29/08
    • H01L51/0545H01L51/0021H01L51/0037H01L51/0052H01L51/0516
    • An object of the present invention is to provide a semiconductor device such as a display device, ID tag, sensor or the like at low cost by using a bottom contact type organic TFT as a switching element. In the present invention, the semiconductor layer of the bottom contact type organic TFT is formed of a polycrystalline material, and the taper width of each of the source and drain electrodes of the TFT in the direction of the channel length is smaller than the average particle size of semiconductor crystals grown on the source and drain electrodes. Alternatively, the side on the channel side of each of the source and drain electrodes of the bottom contact type organic TFT is formed so as to be convex upward with respect to the substrate surface. Alternatively, an organic compound layer different from the semiconductor layer of the bottom contact type organic TFT is made present between each of the source and drain electrodes of the bottom contact type organic TFT and said semiconductor layer, in a thickness of not more than 10 Å and not less than 1 Å.
    • 本发明的目的是通过使用底接触型有机TFT作为开关元件,以低成本提供诸如显示装置,ID标签,传感器等的半导体器件。 在本发明中,底部接触型有机TFT的半导体层由多晶材料形成,TFT的源极和漏极的沟道长度方向的锥形宽度小于平均粒子 在源极和漏极上生长的半导体晶体的尺寸。 或者,底接触型有机TFT的源电极和漏电极的沟道侧的一侧形成为相对于衬底表面向上凸起。 或者,在底接触型有机TFT和所述半导体层的每个源电极和漏电极之间存在不同于底接触型有机TFT的半导体层的有机化合物层,其厚度不大于 并且不小于1。
    • 13. 发明授权
    • Solid-state self-emission display and its production method
    • 固态自发光显示及其制作方法
    • US07053422B2
    • 2006-05-30
    • US10490660
    • 2002-09-30
    • Masahiko AndoToshikazu ShimadaMasatoshi ShiikiShunri OdaNobuyoshi Koshida
    • Masahiko AndoToshikazu ShimadaMasatoshi ShiikiShunri OdaNobuyoshi Koshida
    • H01L33/00
    • H05B33/145H05B33/10H05B33/22
    • The present invention provides a solid state light-emissive display apparatus of high brightness and efficiency, high reliability, and of thin type, and method of manufacturing the same at low cost.Said apparatus has the luminous thin film made up by laminating or mixing crystal fine particle coated with insulator (5) of nm size and fluorescent fine particles (7) of nm size, and the lower electrode and the transparent upper electrode sandwiching said luminous thin film, wherein the electrons injected from said lower electrode are accelerated in the crystal fine particle coated with insulator layer (6) not being scattered by phonons to become high energy ballistic electrons, and form excitons (13) by colliding excitation of fluorescent fine particles. Since said fluorescent fine particles are of nm size, the exciton concentration is high, and luminescence intensity by extinction of excitons is also high.
    • 本发明提供一种高亮度,高效率,高可靠性,薄型的固态发光显示装置及其制造方法。 所述装置具有通过层叠或混合涂覆有nm尺寸的绝缘体(5)和nm尺寸的荧光细颗粒(7)的结晶微粒组成的发光薄膜,并且下电极和透明上电极夹着所述发光薄膜 其特征在于,从所述下部电极注入的电子在不被声子散射的绝缘体层(6)的结晶细小颗粒中被加速,成为高能量的弹道电子,并通过荧光细粒子的激发而形成激子(13)。 由于所述荧光细粒子为nm大小,所以激子浓度高,激子的消光发光强度也高。
    • 15. 发明授权
    • Liquid crystal display device utilizing in-plane-switching system and having alignment film separating picture element electrode or counter electrode from liquid crystal layer
    • 利用面内切换系统的液晶显示装置,具有将液晶层与图像元素电极或对置电极分离的取向膜
    • US06300995B1
    • 2001-10-09
    • US09405229
    • 1999-09-24
    • Masatoshi WakagiMasahiko AndoRitsuo Fukaya
    • Masatoshi WakagiMasahiko AndoRitsuo Fukaya
    • G02F11345
    • G02F1/134363G02F1/133345G02F1/1368
    • A liquid crystal display device includes a pair of substrates, a liquid crystal layer supported between the pair of substrates, a plurality of gate electric wirings provided on one of the pair of substrates, a plurality of drain electric wirings respectively intersecting with the plurality of gate electric wirings in a matrix configuration, a plurality of thin film transistors formed on respective points of the gate electric wirings and the drain electric wirings, a plurality of common electric wirings extending in the same direction as the gate electric wirings, a plurality of picture elements with at least one of the picture elements being respectively surrounded by the gate electric wirings and the drain electric wirings, and a plurality of counter electrodes connected to the common electric wirings and extending in the same direction as the drain electric wirings. A plurality of picture element electrodes made of at least one of conductive oxide and graphite are connected to the thin film transistors and extend in the same direction as the drain electric wirings. An electric field having a component parallel to one of the pair of substrates is produced in the liquid crystal layer by an electric voltage applied between the counter electrodes and the picture element electrodes, and the respective picture element electrodes are in contact with the liquid crystal layer directly or through an alignment film.
    • 液晶显示装置包括一对基板,支撑在该对基板之间的液晶层,设置在一对基板中的一个基板上的多个栅极电布线,分别与多个栅极交叉的多个漏极电布线 形成在矩阵结构中的电布线,形成在栅极电布线和漏极电布线的各个点上的多个薄膜晶体管,沿与栅极电布线相同的方向延伸的多个公共电线,多个像素 其中至少一个图像元素分别被栅极电布线和漏极布线围绕,以及连接到公共电线并沿与漏电布线相同的方向延伸的多个对置电极。 由导电氧化物和石墨中的至少一种制成的多个像素电极被连接到薄膜晶体管并沿与漏极电布线相同的方向延伸。 通过施加在对置电极和像素电极之间的电压,在液晶层中产生具有与一对基板中的一个基板平行的分量的电场,并且各个像素电极与液晶层接触 直接或通过取向膜。