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11. 发明申请

US20130341729A1 SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME, AND NONVOLATILE SEMICONDUCTOR MEMORY DEVICE 有权
标题翻译：半导体器件，其制造方法和非易失性半导体存储器件
公开(公告)号：US20130341729A1
公开(公告)日：2013-12-26
申请号：US13812181
申请日：2011-06-20
申请人： Digh Hisamoto , Shinichi Saito , Akio Shima , Hiroyuki Yoshimoto
发明人： Digh Hisamoto , Shinichi Saito , Akio Shima , Hiroyuki Yoshimoto
IPC分类号： H01L27/06
CPC分类号： H01L27/1203 , G11C11/412 , G11C16/0408 , H01L21/8249 , H01L21/84 , H01L23/535 , H01L27/0623 , H01L27/0705 , H01L27/092 , H01L27/1025 , H01L27/1026 , H01L27/11 , H01L27/11521 , H01L27/11568 , H01L29/0649 , H01L29/0804 , H01L29/0821 , H01L29/0847 , H01L29/0895 , H01L29/1004 , H01L29/1033 , H01L29/66825 , H01L29/66833 , H01L29/7311 , H01L29/788 , H01L29/792 , H01L2924/0002 , H01L2924/00
摘要： Provided is a semiconductor element having, while maintaining the same integratability as a conventional MOSFET, excellent switch characteristics compared with the MOSFET, that is, having the S-value less than 60 mV/order at room temperature. Combining the MOSFET and a tunnel bipolar transistor having a tunnel junction configures a semiconductor element that shows an abrupt change in the drain current with respect to a change in the gate voltage (an S-value of less than 60 mV/order) even at a low voltage.
摘要翻译：提供了与MOSFET相比具有与常规MOSFET相同的可集成性的半导体元件，即在室温下S值小于60mV /阶的优异的开关特性。组合MOSFET和具有隧道结的隧道双极晶体管配置了一个半导体元件，其相对于栅极电压的变化（S值小于60mV /次）显示出漏极电流的突然变化，即使在低电压。

12. 发明授权

US08466236B2 Fluororesin composition, fluororesin molded article and method for producing the same 有权
标题翻译：氟树脂组合物，氟树脂成型体及其制造方法
公开(公告)号：US08466236B2
公开(公告)日：2013-06-18
申请号：US12527510
申请日：2008-02-18
申请人： Hiroyuki Yoshimoto , Hirokazu Yukawa , Yasuhiko Sawada , Taku Yamanaka , Masamichi Sukegawa
发明人： Hiroyuki Yoshimoto , Hirokazu Yukawa , Yasuhiko Sawada , Taku Yamanaka , Masamichi Sukegawa
IPC分类号： C08L27/16 , C08L27/18 , C08L27/00
CPC分类号： B29B13/007 , B29K2027/12 , B29K2027/18 , C08L27/16 , C08L27/18 , C08L2205/02 , C08L2666/04
摘要： The invention provides a fluororesin composition capable of providing a molded article having low relative dielectric constant, excellent in a temperature stability and causing only small transmission losses. The invention is a fluororesin composition wherein a rate of change in relative dielectric constant between 25° C. and 80° C. of a molded article produced therefrom under a standard condition is not greater than 0.2%.
摘要翻译：本发明提供一种氟树脂组合物，其能够提供具有低相对介电常数的模制品，其温度稳定性优异并且仅导致较小的传输损失。本发明是一种氟树脂组合物，其中在标准条件下由其制备的模塑制品在25℃和80℃之间的相对介电常数的变化率不大于0.2％。

13. 发明授权

US08183635B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08183635B2
公开(公告)日：2012-05-22
申请号：US12756451
申请日：2010-04-08
申请人： Nobuyuki Sugii , Ryuta Tsuchiya , Shinichiro Kimura , Takashi Ishigaki , Yusuke Morita , Hiroyuki Yoshimoto
发明人： Nobuyuki Sugii , Ryuta Tsuchiya , Shinichiro Kimura , Takashi Ishigaki , Yusuke Morita , Hiroyuki Yoshimoto
IPC分类号： H01L21/00
CPC分类号： H01L27/1203 , H01L21/76283
摘要： A technique to be applied to a semiconductor device for achieving low power consumption by improving a shape at a boundary portion of a shallow trench and an SOI layer of an SOI substrate. A position (SOI edge) at which a main surface of a silicon substrate and a line extended along a side surface of an SOI layer are crossed is recessed away from a shallow-trench isolation more than a position (STI edge) at which a line extended along a sidewall of a shallow trench and a line extended along the main surface of the silicon substrate are crossed, and a corner of the silicon substrate at the STI edge has a curved surface.
摘要翻译：通过改善在SOI衬底的浅沟槽和SOI层的边界部分的形状来实现低功耗的半导体器件的技术。硅衬底的主表面和沿着SOI层的侧表面延伸的线交叉的位置（SOI边缘）比浅沟槽隔离更远离位于（STI边缘）的位置（STI边缘），在该位置处沿着浅沟槽的侧壁延伸并且沿着硅衬底的主表面延伸的线交叉，并且在STI边缘处的硅衬底的拐角具有弯曲表面。

14. 发明申请

US20110097984A1 Variable duct apparatus 有权
标题翻译：可变风管装置
公开(公告)号：US20110097984A1
公开(公告)日：2011-04-28
申请号：US12923886
申请日：2010-10-13
申请人： Masami Hasegawa , Hiroyuki Yoshimoto
发明人： Masami Hasegawa , Hiroyuki Yoshimoto
IPC分类号： B60H1/34
CPC分类号： B60K11/085 , Y02T10/88
摘要： A variable duct apparatus that controls outside air flowing in to a radiator includes a variable louver that is provided so as to extend in the vehicle width direction between a grille opening and a radiator of a vehicle, and regulates the amount of outside air admitted to the radiator, a lower louver that is provided so as to extend in the vehicle width direction between an air inlet and the radiator, and regulates the amount of outside air admitted to the radiator, and a link mechanism that coordinates and synchronizes the variable louver and the lower louver with each other, and interrupts the coordination between the variable louver and the lower louver upon application of an external force to the lower louver to thereby permit swinging of the lower louver.
摘要翻译：控制流入散热器的外部空气的可变风道装置包括：可变百叶窗，其设置成在车辆宽度方向上在车辆的格栅开口和散热器之间延伸，并且调节进入到所述车辆的外部空气的量散热器，设置成在空气入口和散热器之间沿车宽方向延伸的下百叶窗，并且调节进入散热器的外部空气的量，以及将可变百叶窗和下百叶窗，并且在向下百叶窗施加外力时中断可变百叶窗和下百叶窗之间的协调，从而允许下百叶窗的摆动。

15. 发明授权

US06270707B1 Manufacturing method of a highly conductive polytetrafluoroethylene sheet 失效
标题翻译：高导电性聚四氟乙烯片的制造方法
公开(公告)号：US06270707B1
公开(公告)日：2001-08-07
申请号：US09145284
申请日：1998-09-02
申请人： Yoshinori Hori , Toshinori Kadowaki , Hiroyuki Yoshimoto , Kyohiro Kang
发明人： Yoshinori Hori , Toshinori Kadowaki , Hiroyuki Yoshimoto , Kyohiro Kang
IPC分类号： B29C4710
CPC分类号： C08J5/18 , B29C47/0004 , B29C47/0016 , B29C47/0021 , B29C47/54 , B29C55/005 , B29C55/18 , B29K2027/18 , B29K2105/16 , B29K2995/0005 , C08J2327/18
摘要： This invention concerns a method of manufacturing a highly conductive polytetrafluoroethylene sheet; a method of manufacturing a highly conductive unsintered polytetrafluoroethylene sheet: and a method of manufacturing a highly conductive sintered sheet. In the first method, a paste of polytetrafluoroethylene powder admixed with conductive substance and extrusion lubricant is extruded to preform an unsintered tube-like material, and at least one place on the circumference of this extruded material, the material is cut open longitudinally and the resulting sheet is calendered if necessary. The second method includes a sintering process for the sheet. This invention also concerns a highly conductive polytetrafluoroethylene sheet having a wide-width and long-length, which is obtained by the above-mentioned method. This sheet is not less than 170 mm in width and has variance of volume resistivity (conductivity) in the longitudinal direction, 10% or less, preferably 7% or less in the cross direction. This invention can provide a highly conductive wide-type PTFE sheet whose conductivity in the longitudinal direction is nearly uniform in the cross direction.
摘要翻译：本发明涉及一种制造高导电性聚四氟乙烯片材的方法; 高导电性未烧结聚四氟乙烯片的制造方法以及高导电性烧结片的制造方法。在第一种方法中，挤出与导电物质和挤出润滑剂混合的聚四氟乙烯粉末的糊料，以预成型未烧结的管状材料，并且在该挤出材料的圆周上至少有一个位置，将材料纵向切开，如果需要，片材被压延。第二种方法包括用于片材的烧结过程。本发明还涉及通过上述方法获得的具有宽宽度和长度的高导电性聚四氟乙烯片。该片材的宽度不小于170mm，并且在纵向方向上的体积电阻率（电导率）的差异为10％以下，优选为横向的7％以下。本发明可以提供一种导电性宽的PTFE片，其纵向的导电性在横向上几乎均匀。

16. 发明授权

US5521088A Alcohol acetyltransferase genes and use thereof 失效
标题翻译：醇乙酰转移酶基因及其用途
公开(公告)号：US5521088A
公开(公告)日：1996-05-28
申请号：US77939
申请日：1993-06-18
申请人： Toshio Fujii , Akihiro Iwamatsu , Hiroyuki Yoshimoto , Toshitaka Minetoki , Takayuki Bogaki , Naoshi Nagasawa
发明人： Toshio Fujii , Akihiro Iwamatsu , Hiroyuki Yoshimoto , Toshitaka Minetoki , Takayuki Bogaki , Naoshi Nagasawa
IPC分类号： C12G1/02 , C12C11/00 , C12C11/02 , C12G1/022 , C12G3/02 , C12N1/19 , C12N9/10 , C12N15/09 , C12N15/54 , C12R1/865 , C12N1/15 , C12N15/81
CPC分类号： C12C5/004 , C12C11/00 , C12C11/003 , C12C11/02 , C12C12/004 , C12C12/006 , C12C5/026 , C12G1/0203 , C12N9/1029
摘要： This invention disclosed herein provides an alcohol acetyl transferase ("AATase"), an AATase encoding gene and a yeast having an improved ester producing ability due to transformation with the AATase encoding gene. This invention also provides a process for producing an alcoholic beverage having an enriched ester flavor using the transformed yeast.
摘要翻译：本发明公开了一种醇乙酰转移酶（“AATase”），AATase编码基因和由于用AATase编码基因转化而具有改进的酯生产能力的酵母。本发明还提供了使用转化酵母生产具有富含酯味道的酒精饮料的方法。

17. 发明授权

US4160387A Method and apparatus for detecting internal cavities in casting bars 失效
标题翻译：用于检测铸棒内腔的方法和装置
公开(公告)号：US4160387A
公开(公告)日：1979-07-10
申请号：US864910
申请日：1977-12-27
申请人： Susumu Ihara , Hiroyuki Yoshimoto , Katsumi Mizuuchi , Hideo Nishiumi , Takanobu Suzuki
发明人： Susumu Ihara , Hiroyuki Yoshimoto , Katsumi Mizuuchi , Hideo Nishiumi , Takanobu Suzuki
IPC分类号： B22D11/12 , G01N29/04 , G01N29/24 , G01N29/27
CPC分类号： G01N29/27 , G01N29/2493 , G01N2291/0423 , G01N2291/048 , G01N2291/102 , G01N2291/2626
摘要： A method and an apparatus for detecting the internal cavities in a continuous casting bar in which two opposite surfaces of a casting bar delivered from a continuous casting machine are held between a pair of rollers each having a hollow portion and are pressurized at a predetermined pressure thereby, and an amount of transmission of an ultrasonic wave having a predetermined frequency passing through the casting bar is detected by means of an ultrasonic wave device for transmission and an ultrasonic wave device for reception which are provided respectively in the hollow portions of the rollers to allow the ultrasonic wave to pass through the casting bar running through the rollers, thereby to detect the internal cavities in the casting bar.
摘要翻译：一种用于检测连续铸造棒中的内部空腔的方法和装置，其中从连续铸造机输送的铸造棒的两个相对表面保持在每个具有中空部分的一对辊之间并且以预定压力被加压，由此并且通过用于透射的超声波装置和分别设置在辊的中空部分中的超声波装置来检测通过铸棒的具有预定频率的超声波的透射量，以允许超声波通过贯穿辊的铸造棒，从而检测铸造棒中的内部空腔。

18. 发明申请

US20130213696A1 METAL-CLAD LAMINATE, METHOD FOR PRODUCING SAME, AND FLEXIBLE PRINTED BOARD 有权
标题翻译：金属层压板，其制造方法和柔性印刷板
公开(公告)号：US20130213696A1
公开(公告)日：2013-08-22
申请号：US13881059
申请日：2011-10-25
申请人： Yoshihisa Yamamoto , Hiroyuki Yoshimoto , Hideto Nakagawa
发明人： Yoshihisa Yamamoto , Hiroyuki Yoshimoto , Hideto Nakagawa
IPC分类号： H05K1/03 , B32B37/14 , B32B15/092
CPC分类号： H05K1/0393 , B32B15/092 , B32B37/14 , B32B38/10 , B32B2270/00 , B32B2457/08 , C08L63/00 , H05K3/386 , H05K2201/015 , H05K2201/0154 , Y10T156/10 , Y10T428/31522 , Y10T428/31529 , C08L27/18
摘要： A metal-clad laminate, including metal foil, and a first resin layer arranged on the metal foil, the first resin layer including an epoxy resin and a fluoropolymer with a curable functional group. Also disclosed is a method of producing the metal-clad laminate.
摘要翻译：包括金属箔的覆金属层压板和布置在金属箔上的第一树脂层，第一树脂层包括环氧树脂和具有可固化官能团的含氟聚合物。还公开了制造覆金属层压板的方法。

19. 发明申请

US20120227999A1 CABLE, CABLE DUCT AND METHODS FOR MANUFACTURING CABLE AND CABLE DUCT 审中-公开
标题翻译：电缆，电缆槽和制造电缆和电缆管道的方法
公开(公告)号：US20120227999A1
公开(公告)日：2012-09-13
申请号：US13508680
申请日：2010-11-09
申请人： Masamichi Sukegawa , Hiroyuki Yoshimoto
发明人： Masamichi Sukegawa , Hiroyuki Yoshimoto
IPC分类号： H01B7/00 , B05D1/36 , B32B1/08 , B05D5/00
CPC分类号： H01B7/28 , H01B19/04 , Y10T428/1393
摘要： The present invention provides an electric wire having excellent weather resistance and durability. The present invention relates to: an electric wire, comprising: a conductor; an insulating layer formed around the periphery of the conductor; and an outer layer formed around the periphery of the insulating layer, wherein the outer layer is formed by application of a weatherproof coating material; and a production method thereof.
摘要翻译：本发明提供一种具有优异耐候性和耐久性的电线。本发明涉及一种电线，包括：导体; 形成在导体周边周围的绝缘层; 以及形成在所述绝缘层的周围的外层，其中所述外层通过施加防风雨涂层材料形成; 及其制造方法。

20. 发明申请

US20100258869A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100258869A1
公开(公告)日：2010-10-14
申请号：US12757090
申请日：2010-04-09
申请人： Yusuke MORITA , Ryuta Tsuchiya , Takashi Ishigaki , Hiroyuki Yoshimoto , Nobuyuki Sugii , Shinichiro Kimura
发明人： Yusuke MORITA , Ryuta Tsuchiya , Takashi Ishigaki , Hiroyuki Yoshimoto , Nobuyuki Sugii , Shinichiro Kimura
IPC分类号： H01L27/12 , H01L21/336
CPC分类号： H01L21/76283 , H01L21/823878 , H01L21/84 , H01L27/1203
摘要： An n well and a p well disposed at a predetermined interval on a main surface of a SOI substrate with a thin BOX layer are formed, and an nMIS formed on the p well has a pair of n-type source/drain regions formed on semiconductor layers stacked on a main surface of the SOI layer at a predetermined distance, a gate insulating film, a gate electrode and sidewalls sandwiched between the pair of n-type source/drain regions. A device isolation is formed between the n well and the p well, and a side edge portion of the device isolation extends toward a gate electrode side more than a side edge portion of the n-type source/drain region (sidewall of the BOX layer).
摘要翻译：形成在具有薄BOX层的SOI衬底的主表面上以预定间隔布置的n阱和p阱，并且在p阱上形成的nMIS具有形成在半导体层上的一对n型源极/漏极区堆叠在SOI层的主表面上，预定距离处，栅极绝缘膜，栅电极和夹在该对n型源极/漏极区之间的侧壁。在n阱和p阱之间形成器件隔离，并且器件隔离的侧边缘部分比n型源极/漏极区域的侧边缘部分（BOX层的侧壁）朝向栅电极侧延伸）。

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