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11. 发明申请

US20060196538A1 Systems for depositing material onto workpieces in reaction chambers and methods for removing byproducts from reaction chambers 审中-公开
标题翻译：用于在反应室中将材料沉积到工件上的系统以及用于从反应室除去副产物的方法
公开(公告)号：US20060196538A1
公开(公告)日：2006-09-07
申请号：US11416871
申请日：2006-05-02
申请人： David Kubista , Trung Doan , Lyle Breiner , Ronald Weimer , Kevin Beaman , Er-Xuan Ping , Lingyi Zheng , Cem Basceri
发明人： David Kubista , Trung Doan , Lyle Breiner , Ronald Weimer , Kevin Beaman , Er-Xuan Ping , Lingyi Zheng , Cem Basceri
IPC分类号： F17D1/16 , C23C16/00
CPC分类号： C23C16/45544 , C23C16/4412 , Y10T137/0396
摘要： Systems for depositing material onto workpieces in reaction chambers and methods for removing byproducts from reaction chambers are disclosed herein. In one embodiment, the system includes a gas phase reaction chamber, a first exhaust line coupled to the reaction chamber, first and second traps each in fluid communication with the first exhaust line, and a vacuum pump coupled to the first exhaust line to remove gases from the reaction chamber. The first and second traps are operable independently to individually and/or jointly collect byproducts from the reaction chamber. It is emphasized that this Abstract is provided to comply with the rules requiring an abstract. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.
摘要翻译：用于在反应室中将材料沉积到工件上的系统以及用于从反应室除去副产物的方法在此公开。在一个实施例中，系统包括气相反应室，连接到反应室的第一排气管线，与第一排气管线流体连通的第一和第二阱，以及耦合到第一排气管线以除去气体的真空泵从反应室。第一和第二捕集器独立地可操作地单独地和/或共同地从反应室收集副产物。要强调的是提供本摘要以符合要求摘要的规则。提交它的理解是，它不会用于解释或限制权利要求的范围或含义。

12. 发明申请

US20060121689A1 Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces 审中-公开
标题翻译：微型工件加工设备及控制材料沉积在微型工件上的方法
公开(公告)号：US20060121689A1
公开(公告)日：2006-06-08
申请号：US11327118
申请日：2006-01-06
申请人： Cem Basceri , Trung Doan , Ronald Weimer , Kevin Beaman , Lyle Breiner , Lingyi Zheng , Er-Xuan Ping , Demetrius Sarigiannis , David Kubista
发明人： Cem Basceri , Trung Doan , Ronald Weimer , Kevin Beaman , Lyle Breiner , Lingyi Zheng , Er-Xuan Ping , Demetrius Sarigiannis , David Kubista
IPC分类号： H01L21/76 , H01L21/20 , H01L21/302 , H01L21/31
CPC分类号： C23C16/45527 , C23C16/34 , C23C16/45546
摘要： The present disclosure provides methods and apparatus useful in depositing materials on batches of microfeature workpieces. One implementation provides a method in which a quantity of a first precursor gas is introduced to an enclosure at a first enclosure pressure. The pressure within the enclosure is reduced toga second enclosure pressure while introducing a purge gas at a first flow rate. The second enclosure pressure may approach or be equal to a steady-state base pressure of the processing system at the first flow rate. After reducing the pressure, the purge gas flow may be increased to a second flow rate and the enclosure pressure may be increased to a third enclosure pressure. Thereafter, a flow of a second precursor gas may be introduced with a pressure within the enclosure at a fourth enclosure pressure; the third enclosure pressure is desirably within about 10 percent of the fourth enclosure pressure.
摘要翻译：本公开提供了用于在批次的微特征工件上沉积材料中有用的方法和装置。一个实施方案提供了一种方法，其中一定量的第一前体气体以第一封壳压力被引入外壳。外壳内的压力降低到第二封闭压力，同时以第一流速引入净化气体。第二外壳压力可接近或等于处理系统在第一流量下的稳态基础压力。在降低压力之后，吹扫气体流量可以增加到第二流量，并且外壳压力可以增加到第三外壳压力。此后，第二前体气体的流动可以在第四封闭压力下以外壳内的压力引入; 第三外壳压力理想地在第四外壳压力的约10％内。

13. 发明申请

US20050126489A1 Methods and systems for controlling temperature during microfeature workpiece processing, e.g., CVD deposition 有权
标题翻译：用于在微特征工件加工（例如CVD沉积）期间控制温度的方法和系统
公开(公告)号：US20050126489A1
公开(公告)日：2005-06-16
申请号：US10733523
申请日：2003-12-10
申请人： Kevin Beaman , Trung Doan , Lyle Breiner , Ronald Weimer , Er-Xuan Ping , David Kubista , Cem Basceri , Lingyi Zheng
发明人： Kevin Beaman , Trung Doan , Lyle Breiner , Ronald Weimer , Er-Xuan Ping , David Kubista , Cem Basceri , Lingyi Zheng
IPC分类号： C23C16/46 , C23C16/00 , B05D1/00
CPC分类号： C23C16/00 , C23C16/46
摘要： The present disclosure provides methods and systems for controlling temperature. The method has particular utility in connection with controlling temperature in a deposition process, e.g., in depositing a heat-reflective material via CVD. One exemplary embodiment provides a method that involves monitoring a first temperature outside the deposition chamber and a second temperature inside the deposition chamber. An internal temperature in the deposition chamber can be increased in accordance with a ramp profile by (a) comparing a control temperature to a target temperature, and (b) selectively delivering heat to the deposition chamber in response to a result of the comparison. The target temperature may be determined in accordance with the ramp profile, but the control temperature in one implementation alternates between the first temperature and the second temperature.
摘要翻译：本公开提供了用于控制温度的方法和系统。该方法在沉积工艺中控制温度，例如通过CVD沉积热反射材料方面具有特别的用途。一个示例性实施例提供了一种方法，其涉及监测沉积室外的第一温度和沉积室内的第二温度。通过（a）将控制温度与目标温度进行比较，可以根据斜坡分布来增加沉积室中的内部温度，以及（b）响应于比较的结果，选择性地将热量输送到沉积室。目标温度可以根据斜坡分布来确定，但是一个实现中的控制温度在第一温度和第二温度之间交替。

14. 发明申请

US20050039686A1 Microfeature workpiece processing apparatus and methods for batch deposition of materials on microfeature workpieces 失效
标题翻译：微型工件加工设备和微型工件上批量堆放材料的微型工件加工设备及方法
公开(公告)号：US20050039686A1
公开(公告)日：2005-02-24
申请号：US10646607
申请日：2003-08-21
申请人： Lingyi Zheng , Trung Doan , Lyle Breiner , Er-Xuan Ping , Ronald Weimer , David Kubista , Kevin Beaman , Cem Basceri
发明人： Lingyi Zheng , Trung Doan , Lyle Breiner , Er-Xuan Ping , Ronald Weimer , David Kubista , Kevin Beaman , Cem Basceri
IPC分类号： C23C16/00 , C23C16/44 , C23C16/455 , C23C16/458
CPC分类号： C23C16/4583 , C23C16/45546 , C23C16/45578 , Y10S206/832
摘要： The present disclosure describes apparatus and methods for processing microfeature workpieces, e.g., by depositing material on a microelectronic semiconductor using atomic layer deposition. Some of these apparatus include microfeature workpiece holders that include gas distributors. One exemplary implementation provides a microfeature workpiece holder adapted to hold a plurality of microfeature workpieces. This workpiece holder includes a plurality of workpiece supports and a gas distributor. The workpiece supports are adapted to support a plurality of microfeature workpieces in a spaced-apart relationship to define a process space adjacent a surface of each microfeature workpiece. The gas distributor includes an inlet and a plurality of outlets, with each of the outlets positioned to direct a flow of process gas into one of the process spaces.
摘要翻译：本公开描述了用于处理微特征工件的装置和方法，例如通过使用原子层沉积在微电子半导体上沉积材料。这些设备中的一些包括微型工件保持器，其包括气体分配器。一个示例性实施例提供了适于保持多个微特征工件的微特征工件保持器。该工件保持器包括多个工件支撑件和气体分配器。工件支撑件适于以间隔的关系支撑多个微特征工件以限定与每个微特征工件的表面相邻的工艺空间。气体分配器包括入口和多个出口，其中每个出口被定位成将处理气体流引导到处理空间中的一个中。

15. 发明申请

US20060057800A1 Methods for treating pluralities of discrete semiconductor substrates 有权
公开(公告)号：US20060057800A1
公开(公告)日：2006-03-16
申请号：US11206340
申请日：2005-08-17
申请人： Trung Doan , Lyle Breiner , Er-Xuan Ping , Lingyi Zheng
发明人： Trung Doan , Lyle Breiner , Er-Xuan Ping , Lingyi Zheng
IPC分类号： H01L21/8238
CPC分类号： H01L21/0228 , C23C16/0236 , C23C16/0245 , C23C16/45546 , C23C16/54 , C30B25/02 , H01L21/02046 , H01L21/0214 , H01L21/02142 , H01L21/02164 , H01L21/0217 , H01L21/02175 , H01L21/02211 , H01L21/02326 , H01L21/28562 , H01L21/3144 , H01L21/31604 , H01L21/31683 , H01L21/3185 , H01L21/76841 , H01L21/76856 , H01L21/76888
摘要： The invention includes a method for treating a plurality of discrete semiconductor substrates. The discrete semiconductor substrates are placed within a reactor chamber. While the substrates are within the chamber, they are simultaneously exposed to one or more of H, F and Cl to remove native oxide. After removing the native oxide, the substrates are simultaneously exposed to a first reactive material to form a first mass across at least some exposed surfaces of the substrates. The first reactive material is removed from the reaction chamber, and subsequently the substrates are exposed to a second reactive material to convert the first mass to a second mass. The invention also includes apparatuses which can be utilized for simultaneous ALD treatment of a plurality of discrete semiconductor substrates.

16. 发明申请

US20050009335A1 Apparatuses for treating pluralities of discrete semiconductor substrates; and methods for treating pluralities of discrete semiconductor substrates 审中-公开
标题翻译：用于处理多个分立半导体衬底的设备; 以及用于处理多个分立半导体衬底的方法
公开(公告)号：US20050009335A1
公开(公告)日：2005-01-13
申请号：US10914828
申请日：2004-08-09
申请人： Trung Dean , Lyle Breiner , Er-Xuan Ping , Lingyi Zheng
发明人： Trung Dean , Lyle Breiner , Er-Xuan Ping , Lingyi Zheng
IPC分类号： C23C16/02 , C23C16/44 , C23C16/455 , C23C16/54 , C30B25/02 , H01L21/285 , H01L21/306 , H01L21/314 , H01L21/316 , H01L21/318 , H01L21/768 , G03C1/725 , G03C1/73 , H01L21/20 , H01L21/469
CPC分类号： H01L21/0228 , C23C16/0236 , C23C16/0245 , C23C16/45546 , C23C16/54 , C30B25/02 , H01L21/02046 , H01L21/0214 , H01L21/02142 , H01L21/02164 , H01L21/0217 , H01L21/02175 , H01L21/02211 , H01L21/02326 , H01L21/28562 , H01L21/3144 , H01L21/31604 , H01L21/31683 , H01L21/3185 , H01L21/76841 , H01L21/76856 , H01L21/76888
摘要： The invention includes a method for treating a plurality of discrete semiconductor substrates. The discrete semiconductor substrates are placed within a reactor chamber. While the substrates are within the chamber, they are simultaneously exposed to one or more of H, F and Cl to remove native oxide. After removing the native oxide, the substrates are simultaneously exposed to a first reactive material to form a first mass across at least some exposed surfaces of the substrates. The first reactive material is removed from the reaction chamber, and subsequently the substrates are exposed to a second reactive material to convert the first mass to a second mass. The invention also includes apparatuses which can be utilized for simultaneous ALD treatment of a plurality of discrete semiconductor substrates.
摘要翻译：本发明包括用于处理多个分立半导体衬底的方法。离散的半导体衬底被放置在反应室内。当衬底在室内时，它们同时暴露于H，F和Cl中的一种或多种以除去天然氧化物。在除去天然氧化物之后，将基板同时暴露于第一反应性材料，以在基底的至少一些暴露表面上形成第一质量。将第一反应性材料从反应室中除去，随后将基板暴露于第二反应性材料以将第一质量转化为第二质量。本发明还包括可以用于多个分立半导体衬底的同时ALD处理的装置。

17. 发明申请

US20070170552A1 Ultra thin TCS (SiCl4) cell nitride for DRAM capacitor with DCS (SiH2cl2) interface seeding layer 失效
标题翻译：具有DCS（SiH2cl2）界面接种层的DRAM电容器的超薄TCS（SiCl4）电池氮化物
公开(公告)号：US20070170552A1
公开(公告)日：2007-07-26
申请号：US11712077
申请日：2007-02-28
申请人： Lingyi Zheng , Er-Xuan Ping
发明人： Lingyi Zheng , Er-Xuan Ping
IPC分类号： H01L23/58
CPC分类号： H01L21/0217 , C23C16/0272 , C23C16/345 , H01L21/02211 , H01L21/02271 , H01L21/31051 , H01L21/3115 , H01L21/3185 , H01L21/3211 , H01L29/94 , H01L2924/0002 , H01L2924/00
摘要： A method for forming silicon nitride films on semiconductor devices is provided. In one embodiment of the method, a silicon-comprising substrate is first exposed to a mixture of dichlorosilane (DCS) and a nitrogen-comprising gas to deposit a thin silicon nitride seeding layer on the surface, and then exposed to a mixture of silicon tetrachloride (TCS) and a nitrogen comprising gas to deposit a TCS silicon nitride layer on the DCS seeding layer. In another embodiment, the method involves first nitridizing the surface of the silicon-comprising substrate prior to forming the DCS nitride seeding layer and the TCS nitride layer. The method achieves a TCS nitride layer having a sufficient thickness to eliminate bubbling and punch-through problems and provide high electrical performance regardless of the substrate type. Also provided are methods of forming a capacitor, and the resulting capacitor structures.
摘要翻译：提供了一种在半导体器件上形成氮化硅膜的方法。在该方法的一个实施方案中，首先将含硅衬底暴露于二氯硅烷（DCS）和含氮气体的混合物以在表面上沉积薄氮化硅接种层，然后暴露于四氯化硅（TCS）和包含气体的氮气以在DCS籽晶层上沉积TCS氮化硅层。在另一个实施方案中，该方法包括在形成DCS氮化物接种层和TCS氮化物层之前首先氮化含硅衬底的表面。该方法实现了具有足够厚度的TCS氮化物层，以消除起泡和穿通问题，并且不管衬底类型如何，都能提供高电性能。还提供了形成电容器的方法以及所得到的电容器结构。

18. 发明申请

US20060244092A1 Semiconductor constructions 有权
公开(公告)号：US20060244092A1
公开(公告)日：2006-11-02
申请号：US11477958
申请日：2006-06-28
申请人： Lingyi Zheng , Er-Xuan Ping
发明人： Lingyi Zheng , Er-Xuan Ping
IPC分类号： H01L29/00
CPC分类号： H01L21/02175 , C23C16/34 , H01L21/022 , H01L21/02205 , H01L21/3141 , H01L21/76841 , H01L28/60
摘要： The invention encompasses methods of forming metal nitride proximate dielectric materials. The metal nitride comprises two portions, with one of the portions being nearer the dielectric material than the other. The portion of the metal nitride nearest the dielectric material is formed from a non-halogenated metal-containing precursor, and the portion of the metal nitride further from the dielectric material is formed from a halogenated metal-containing precursor. The methodology of the present invention can be utilized for forming capacitor constructions, with the portion of the metal nitride formed from the halogenated metal-containing precursor being incorporated into a capacitor electrode.

19. 发明申请

US20060009019A1 Methods of forming metal nitride, and methods of forming capacitor constructions 有权
公开(公告)号：US20060009019A1
公开(公告)日：2006-01-12
申请号：US10887962
申请日：2004-07-08
申请人： Lingyi Zheng , Er-Xuan Ping
发明人： Lingyi Zheng , Er-Xuan Ping
IPC分类号： H01L21/44
CPC分类号： H01L21/02175 , C23C16/34 , H01L21/022 , H01L21/02205 , H01L21/3141 , H01L21/76841 , H01L28/60
摘要： The invention encompasses methods of forming metal nitride proximate dielectric materials. The metal nitride comprises two portions, with one of the portions being nearer the dielectric material than the other. The portion of the metal nitride nearest the dielectric material is formed from a non-halogenated metal-containing precursor, and the portion of the metal nitride further from the dielectric material is formed from a halogenated metal-containing precursor. The methodology of the present invention can be utilized for forming capacitor constructions, with the portion of the metal nitride formed from the halogenated metal-containing precursor being incorporated into a capacitor electrode.

20. 发明申请

US20050003611A1 Methods of fabricating double-sided hemispherical silicon grain electrodes and capacitor modules 失效
标题翻译：制造双面半球硅晶片电极和电容器模块的方法
公开(公告)号：US20050003611A1
公开(公告)日：2005-01-06
申请号：US10898523
申请日：2004-07-23
申请人： Lingyi Zheng
发明人： Lingyi Zheng
IPC分类号： H01L21/02 , H01L21/84 , H01L27/12 , H01L21/8242
CPC分类号： H01L28/84 , H01L21/84 , H01L27/1085 , H01L27/1203 , H01L28/91
摘要： The invention provides robust and cost effective techniques to fabricate a semiconductor device having double-sided hemispherical silicon grain (HSG) electrodes for container capacitors. In an embodiment, this is accomplished by forming a layer of hemispherical silicon grain (HSG) polysilicon over interior surfaces of a container formed in a substrate. Any HSG polysilicon and barrier layers formed over the substrate and around the container opening during the forming of the HSG polysilicon and barrier layers are removed. An inside surface of the formed HSG polysilicon layer is nitridized to form a nitridation layer. A layer of cell nitride is deposited over the nitridation layer and the outside HSG polysilicon layer. A top electrode is formed over the deposited cell nitride layer.
摘要翻译：本发明提供了用于制造具有用于容器电容器的双面半球形硅晶粒（HSG）电极的半导体器件的鲁棒且成本有效的技术。在一个实施例中，这是通过在形成在基底中的容器的内表面上形成半球状硅晶粒（HSG）多晶硅层来实现的。去除在形成HSG多晶硅和阻挡层期间在衬底上和容器开口周围形成的任何HSG多晶硅和阻挡层。形成的HSG多晶硅层的内表面被氮化以形成氮化层。在氮化层和外部HSG多晶硅层上沉积一层细胞氮化物。顶部电极形成在沉积的单元氮化物层上。

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