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11. 发明授权

US07888153B2 Method of manufacturing vertical light emitting device 有权
标题翻译：制造垂直发光装置的方法
公开(公告)号：US07888153B2
公开(公告)日：2011-02-15
申请号：US12805132
申请日：2010-07-14
申请人： Hyun-soo Kim , Kyoung-kook Kim , Hyung-kun Kim , Kwang-ki Choi , Jeong-wook Lee
发明人： Hyun-soo Kim , Kyoung-kook Kim , Hyung-kun Kim , Kwang-ki Choi , Jeong-wook Lee
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L33/44
摘要： Provided is a method of manufacturing a vertical light emitting device. The method of manufacturing the vertical light emitting device may include forming an emissive layer including a n-type semiconductor layer, an active layer, and a p-type semiconductor layer on a substrate, forming a first trench dividing the emissive layer into light emitting device units in which the emissive layer remains on the lower part of the first trench to a desired, or alternatively, a predetermined thickness, forming a passivation layer on the emissive layer, forming a p-type electrode on the p-type semiconductor layer of the emissive layer, forming a metal supporting layer on the passivation layer and the p-type electrode, removing the substrate, removing a remaining portion of the emissive layer when the surface of the emissive layer is exposed by removing the substrate, forming a n-type electrode on the n-type semiconductor layer of the emissive layer, and cutting the metal supporting layer to divide the emissive layer into the light emitting device units.
摘要翻译：提供一种垂直发光装置的制造方法。制造垂直发光器件的方法可以包括在衬底上形成包括n型半导体层，有源层和p型半导体层的发射层，形成将发光层划分成发光器件的第一沟槽其中发射层保留在第一沟槽的下部上的单元到期望的或可选的预定厚度，在发射层上形成钝化层，在p型半导体层上形成p型电极发射层，在钝化层和p型电极上形成金属支撑层，去除衬底，当发射层的表面通过去除衬底而暴露时去除发射层的剩余部分，形成n型电极，并且切割金属支撑层以将发光层划分为发光器件单元。

12. 发明授权

US07736924B2 Multiple reflection layer electrode, compound semiconductor light emitting device having the same and methods of fabricating the same 有权
公开(公告)号：US07736924B2
公开(公告)日：2010-06-15
申请号：US12458136
申请日：2009-07-01
申请人： June-o Song , Tae-yeon Seong , Kyoung-kook Kim , Hyun-gi Hong , Kwang-ki Choi , Hyun-soo Kim
发明人： June-o Song , Tae-yeon Seong , Kyoung-kook Kim , Hyun-gi Hong , Kwang-ki Choi , Hyun-soo Kim
IPC分类号： H01L21/00 , H01L33/00
CPC分类号： H01L33/405 , H01L33/32
摘要： Provided are a multiple reflection layer electrode, a compound semiconductor light emitting device having the same and methods of fabricating the same. The multiple reflection layer electrode may include a reflection layer on a p-type semiconductor layer, an APL (agglomeration protecting layer) on the reflection layer so as to prevent or retard agglomeration of the reflection layer, and a diffusion barrier between the reflection layer and the APL so as to retard diffusion of the APL.

13. 发明授权

US07344904B2 Method of fabricating laser diode 有权
标题翻译：制造激光二极管的方法
公开(公告)号：US07344904B2
公开(公告)日：2008-03-18
申请号：US11152255
申请日：2005-06-15
申请人： Yeon-hee Kim , Kwang-ki Choi , Youn-joon Sung
发明人： Yeon-hee Kim , Kwang-ki Choi , Youn-joon Sung
IPC分类号： H01L33/00
CPC分类号： H01S5/223 , H01S5/22
摘要： Provided is a method of fabricating a laser diode. Embodiments of the method include sequentially forming at least a lower clad layer, a resonance layer, an upper clad layer, an upper contact layer, an upper electrode layer, and a sacrificial layer on a substrate; forming a ridge portion by etching the sacrificial layer, the upper electrode layer, the upper contact layer, and a predetermined depth of the upper clad layer; exposing both top surfaces of the upper contact layer and both bottom surfaces of the sacrificial layer corresponding thereto by etching portions of the upper electrode layer, which are exposed on both sides of the ridge portion; forming a buried layer having an opening that exposes at least a portion of the bottom surface of the sacrificial layer, the buried layer formed on the surface of the ridge portion and the top surface of the upper clad layer that extends from the ridge portion; and removing the sacrificial layer and a portion of the buried layer disposed thereon by supplying an etchant through the opening.
摘要翻译：提供了一种制造激光二极管的方法。该方法的实施例包括在基板上顺序地形成下包层，谐振层，上覆层，上接触层，上电极层和牺牲层; 通过蚀刻牺牲层，上电极层，上接触层和上包层的预定深度来形成脊部; 通过暴露在脊部两侧的上电极层的腐蚀部分，暴露上接触层的上表面和对应于其的牺牲层的两个底表面; 形成具有露出所述牺牲层的底面的至少一部分的开口的掩埋层，所述掩埋层形成在所述脊部的表面上以及所述上覆盖层的从所述脊部延伸的顶面; 以及通过通过所述开口提供蚀刻剂来去除所述牺牲层和设置在其上的所述掩埋层的一部分。

14. 发明申请

US20060045155A1 Method of fabricating laser diode 有权
标题翻译：制造激光二极管的方法
公开(公告)号：US20060045155A1
公开(公告)日：2006-03-02
申请号：US11152255
申请日：2005-06-15
申请人： Yeon-hee Kim , Kwang-ki Choi , Youn-joon Sung
发明人： Yeon-hee Kim , Kwang-ki Choi , Youn-joon Sung
IPC分类号： H01S5/00
CPC分类号： H01S5/223 , H01S5/22
摘要： Provided is a method of fabricating a laser diode. Embodiments of the method include sequentially forming at least a lower clad layer, a resonance layer, an upper clad layer, an upper contact layer, an upper electrode layer, and a sacrificial layer on a substrate; forming a ridge portion by etching the sacrificial layer, the upper electrode layer, the upper contact layer, and a predetermined depth of the upper clad layer; exposing both top surfaces of the upper contact layer and both bottom surfaces of the sacrificial layer corresponding thereto by etching portions of the upper electrode layer, which are exposed on both sides of the ridge portion; forming a buried layer having an opening that exposes at least a portion of the bottom surface of the sacrificial layer, the buried layer formed on the surface of the ridge portion and the top surface of the upper clad layer that extends from the ridge portion; and removing the sacrificial layer and a portion of the buried layer disposed thereon by supplying an etchant through the opening.
摘要翻译：提供了一种制造激光二极管的方法。该方法的实施例包括在基板上顺序地形成下包层，谐振层，上覆层，上接触层，上电极层和牺牲层; 通过蚀刻牺牲层，上电极层，上接触层和上包层的预定深度来形成脊部; 通过暴露在脊部两侧的上电极层的腐蚀部分，暴露上接触层的上表面和对应于其的牺牲层的两个底表面; 形成具有露出所述牺牲层的底面的至少一部分的开口的掩埋层，所述掩埋层形成在所述脊部的表面上以及所述上覆盖层的从所述脊部延伸的顶面; 以及通过通过所述开口提供蚀刻剂来去除所述牺牲层和设置在其上的所述掩埋层的一部分。

15. 发明授权

US06667186B2 Method of isolating semiconductor laser diode 失效
标题翻译：隔离半导体激光二极管的方法
公开(公告)号：US06667186B2
公开(公告)日：2003-12-23
申请号：US10259325
申请日：2002-09-30
申请人： Kwang-ki Choi
发明人： Kwang-ki Choi
IPC分类号： H01L2100
CPC分类号： H01S5/0201 , H01S5/32341
摘要： A method of isolating semiconductor laser diodes is provided. A n-type compound semiconductor layer is formed on a substrate. A plurality of semiconductor laser diodes having the n-type compound semiconductor layer are formed on the n-type compound semiconductor layer so that laser emitting regions of the semiconductor laser diodes are connected to each other. The n-type compound semiconductor layer and a material layer of which the semiconductor laser diodes are formed are removed around the semiconductor laser diodes and the laser emitting regions for connecting the semiconductor laser diodes to each other. Base cut lines that perpendicularly cross the laser emitting regions are formed on backside of the substrate between the semiconductor laser diodes. The semiconductor laser diodes are isolated from each other along the respective base cut lines. Thus, laser emitting faces perpendicular to an active layer and having clear surfaces can be obtained. Also, failure can be minimized in a process of isolating semiconductor laser diodes.
摘要翻译：提供了隔离半导体激光二极管的方法。在基板上形成n型化合物半导体层。在n型化合物半导体层上形成具有n型化合物半导体层的多个半导体激光二极管，使得半导体激光二极管的激光发射区域彼此连接。在半导体激光二极管和用于将半导体激光二极管彼此连接的激光发射区域周围除去形成半导体激光二极管的n型化合物半导体层和材料层。在半导体激光二极管之间的衬底的背面形成垂直于激光发射区域的基底切割线。半导体激光二极管沿着各自的基本切割线彼此隔离。因此，可以获得垂直于有源层并具有透明表面的激光发射面。此外，在隔离半导体激光二极管的过程中可以最小化故障。

16. 发明申请

US20100279448A1 Method of manufacturing vertical light emitting device 有权
公开(公告)号：US20100279448A1
公开(公告)日：2010-11-04
申请号：US12805132
申请日：2010-07-14
申请人： Hyun-soo Kim , Kyoung-kook Kim , Hyung-kun Kim , Kwang-ki Choi , Jeong-wook Lee
发明人： Hyun-soo Kim , Kyoung-kook Kim , Hyung-kun Kim , Kwang-ki Choi , Jeong-wook Lee
IPC分类号： H01L21/78
CPC分类号： H01L33/0079 , H01L33/44
摘要： Provided is a method of manufacturing a vertical light emitting device. The method of manufacturing the vertical light emitting device may include forming an emissive layer including a n-type semiconductor layer, an active layer, and a p-type semiconductor layer on a substrate, forming a first trench dividing the emissive layer into light emitting device units in which the emissive layer remains on the lower part of the first trench to a desired, or alternatively, a predetermined thickness, forming a passivation layer on the emissive layer, forming a p-type electrode on the p-type semiconductor layer of the emissive layer, forming a metal supporting layer on the passivation layer and the p-type electrode, removing the substrate, removing a remaining portion of the emissive layer when the surface of the emissive layer is exposed by removing the substrate, forming a n-type electrode on the n-type semiconductor layer of the emissive layer, and cutting the metal supporting layer to divide the emissive layer into the light emitting device units.

17. 发明授权

US07737456B2 Multiple reflection layer electrode, compound semiconductor light emitting device having the same and methods of fabricating the same 有权
标题翻译：多反射层电极，具有该反射层电极的化合物半导体发光器件及其制造方法
公开(公告)号：US07737456B2
公开(公告)日：2010-06-15
申请号：US11808172
申请日：2007-06-07
申请人： June-o Song , Tae-yeon Seong , Kyoung-kook Kim , Hyun-gi Hong , Kwang-ki Choi , Hyun-soo Kim
发明人： June-o Song , Tae-yeon Seong , Kyoung-kook Kim , Hyun-gi Hong , Kwang-ki Choi , Hyun-soo Kim
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/405 , H01L33/32
摘要： Provided are a multiple reflection layer electrode, a compound semiconductor light emitting device having the same and methods of fabricating the same. The multiple reflection layer electrode may include a reflection layer on a p-type semiconductor layer, an APL (agglomeration protecting layer) on the reflection layer so as to prevent or retard agglomeration of the reflection layer, and a diffusion barrier between the reflection layer and the APL so as to retard diffusion of the APL.
摘要翻译：提供了多反射层电极，具有该反射层电极的化合物半导体发光器件及其制造方法。多反射层电极可以包括在p型半导体层上的反射层，反射层上的APL（聚集保护层），以防止或阻止反射层的聚集，并且反射层与 APL，以阻止APL的扩散。

18. 发明申请

US20080038857A1 Method of manufacturing nitride-based semiconductor light-emitting device 失效
标题翻译：制造氮化物系半导体发光元件的方法
公开(公告)号：US20080038857A1
公开(公告)日：2008-02-14
申请号：US11802482
申请日：2007-05-23
申请人： Kyoung-kook Kim , Kwang-ki Choi , June-o Song , Suk-ho Yoon , Kwang-hyeon Baik , Hyun-soo Kim
发明人： Kyoung-kook Kim , Kwang-ki Choi , June-o Song , Suk-ho Yoon , Kwang-hyeon Baik , Hyun-soo Kim
IPC分类号： H01L21/311
CPC分类号： H01L33/0079 , H01L21/0237 , H01L21/0242 , H01L21/02439 , H01L21/02472 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L21/02664 , H01S5/0213 , H01S5/0217
摘要： Provided is a method of manufacturing a nitride-based semiconductor light-emitting device having increased efficiency and increased output properties. The method may include forming a sacrificial layer having a wet etching property on a substrate, forming a protective layer on the sacrificial layer, protecting the sacrificial layer in a reaction gas atmosphere for crystal growth, and facilitating epitaxial growth of a semiconductor layer to be formed on the protective layer, forming a semiconductor device including an n-type semiconductor layer, an active layer, and a p-type semiconductor layer on the protective layer, and removing the substrate from the semiconductor device by wet etching the sacrificial layer.
摘要翻译：提供了一种制造具有提高的效率和增加的输出特性的氮化物基半导体发光器件的方法。该方法可以包括在衬底上形成具有湿蚀刻性质的牺牲层，在牺牲层上形成保护层，在用于晶体生长的反应气体气氛中保护牺牲层，并且促进要形成的半导体层的外延生长在保护层上，在保护层上形成包括n型半导体层，有源层和p型半导体层的半导体器件，并且通过湿式蚀刻牺牲层从半导体器件去除衬底。

19. 发明授权

US07136407B2 Semiconductor laser diode with removable high reflection film and method of manufacturing the same 有权
标题翻译：具有可移除高反射膜的半导体激光二极管及其制造方法
公开(公告)号：US07136407B2
公开(公告)日：2006-11-14
申请号：US10984854
申请日：2004-11-10
申请人： Kwang-ki Choi
发明人： Kwang-ki Choi
IPC分类号： H01S5/00
CPC分类号： H01S5/0425 , H01S5/02276 , H01S5/028
摘要： Provided are a semiconductor laser diode and a method of manufacturing the same. The semiconductor laser diode includes an n-type compound semiconductor layer; a resonant layer stacked on a predetermined region of the n-type compound semiconductor layer; a p-type compound semiconductor layer formed on the resonant layer; electrodes respectively formed on each of the p-type and n-type compound semiconductor layers; a bonding metal film stacked on the electrodes; and a high reflection film stacked on the other surface of the resonant layer facing a surface through which a laser generated from the resonant layer is emitted, wherein the thickness of the bonding metal film is greater than that of the high reflection film.
摘要翻译：提供半导体激光二极管及其制造方法。半导体激光二极管包括n型化合物半导体层; 堆叠在所述n型化合物半导体层的预定区域上的谐振层; 形成在共振层上的p型化合物半导体层; 分别形成在每个p型和n型化合物半导体层上的电极; 层叠在电极上的接合金属膜; 以及叠层在所述谐振层的与所述谐振层产生的激光所发射的表面相对的另一表面上的高反射膜，其中所述接合金属膜的厚度大于所述高反射膜的厚度。

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