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    • 13. 发明申请
    • Lens transfer device
    • 镜头转移装置
    • US20070091463A1
    • 2007-04-26
    • US11585283
    • 2006-10-24
    • Ki PaikYoun BinJung LeeDong LeeByung KangJung RyuSung KimBurhanettin Koc
    • Ki PaikYoun BinJung LeeDong LeeByung KangJung RyuSung KimBurhanettin Koc
    • G02B15/14
    • G02B7/102
    • The invention provides a lens transfer device including at least one lens and a lens barrel. The lens barrel has a lens receiving part with the lens arranged in an inner space thereof and an extension extending radially from an outer surface of the lens receiving part. An actuator has a body and an output member at a leading end of the actuator to contact the extension, and is adapted to expand/contract and bend in response to an external supply voltage to provide a driving force necessary for transfer of the lens barrel through the output member. A pressing member has a free end contacting a rear end of the actuator to force the actuator against the extension, and a guide guides the transfer of the lens barrel along an optical axis.
    • 本发明提供一种透镜传送装置,其包括至少一个透镜和镜筒。 透镜镜筒具有透镜接收部分,透镜布置在其内部空间中,并且具有从透镜接收部分的外表面径向延伸的延伸部。 致动器具有在致动器的前端处的主体和输出构件以接触延伸部,并且适于响应于外部电源电压而膨胀/收缩和弯曲,以提供透镜筒通过所需的驱动力 输出成员。 按压构件具有接触致动器的后端的自由端以迫使致动器抵靠延伸部,并且引导件引导透镜镜筒沿着光轴的传送。
    • 20. 发明申请
    • Method for forming landing plug poly of semiconductor device
    • 用于形成半导体器件的着陆塞多晶的方法
    • US20060110910A1
    • 2006-05-25
    • US11123557
    • 2005-05-06
    • Jung LeeKi Nam
    • Jung LeeKi Nam
    • H01L21/4763H01L21/44H01L21/336
    • H01L21/76895H01L21/28061H01L21/76897
    • Disclosed is a method for forming a landing plug poly of a semiconductor device. In such a method, there is provided a substrate formed with gates, each of which has a nitride film as a gate hard mask and nitride film spacers. An insulating interlayer is formed over the entire surface of the substrate and then is subjected to CMP until the nitride film is exposed. A material film having etching selectivity to the nitride film is deposited on the resultant substrate structure. The material film is patterned and the exposed insulating interlayer portions are etched to form a landing plug contact which simultaneously exposes several gates and substrate regions between the gates. A polysilicon film is deposited to fill up the landing plug contact. Finally, the polysilicon film is subjected to CMP until the gates are exposed.
    • 公开了一种用于形成半导体器件的着陆塞多晶的方法。 在这种方法中,提供了形成有栅极的基板,每个栅极具有氮化膜作为栅极硬掩模和氮化物膜间隔物。 在衬底的整个表面上形成绝缘中间层,然后进行CMP直到氮化膜露出。 在所得到的基板结构上沉积具有对氮化物膜的蚀刻选择性的材料膜。 对材料膜进行图案化,并且暴露的绝缘夹层部分被蚀刻以形成同时在栅极之间暴露几个栅极和衬底区域的着色插头接触。 沉积多晶硅膜以填满着陆插头触点。 最后,对多晶硅膜进行CMP直到栅极暴露。