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11. 发明授权

US06791887B2 High reliable reference current generator for MRAM 有权
标题翻译： MRAM的高可靠参考电流发生器
公开(公告)号：US06791887B2
公开(公告)日：2004-09-14
申请号：US10653992
申请日：2003-09-04
申请人： Chien-Chung Hung , Ming-Jer Kao , Tsung-Ming Pan , Yung-Hsiang Chen
发明人： Chien-Chung Hung , Ming-Jer Kao , Tsung-Ming Pan , Yung-Hsiang Chen
IPC分类号： G11C714
CPC分类号： G11C5/147 , G11C7/14 , G11C11/15 , G11C11/5607
摘要： The present invention relates to a simplified reference current generator for a magnetic random access memory. The reference current generator is positioned in the vicinity of the memory cells of the magnetic random access memory, and applies reference elements which are the same as the magnetic tunnel junctions of the memory cell and bear the same cross voltages. The plurality of reference elements are used for forming the reference current generator by using one or several bit lines, and the voltage which is the same as the voltage of the memory cell is crossly connected to the reference elements so as to generate a plurality of current signals; and a peripheral IC circuit is used for generating the plurality of midpoint reference current signals and judging the data states. Thanks to the midpoint reference current signals, the multiple-states memory cell, including the 2-states memory cell, can read data more accurately.
摘要翻译：本发明涉及一种用于磁随机存取存储器的简化参考电流发生器。参考电流发生器位于磁随机存取存储器的存储单元附近，并且施加与存储单元的磁隧道结相同并且承受相同交叉电压的参考元件。多个参考元件用于通过使用一个或几个位线形成参考电流发生器，并且与存储器单元的电压相同的电压被交叉地连接到参考元件，以便产生多个电流信号; 并且使用外围IC电路来产生多个中点参考电流信号并判断数据状态。由于中点参考电流信号，包括2状态存储单元的多状态存储单元可以更精确地读取数据。

12. 发明申请

US20090003043A1 Method for switching magnetic moment in magnetoresistive random access memory with low current 有权
标题翻译：低电流磁阻随机存取存储器中磁矩切换的方法
公开(公告)号：US20090003043A1
公开(公告)日：2009-01-01
申请号：US12219247
申请日：2008-07-18
申请人： Chien-Chung Hung , Ming-Jer Kao , Yuan-Jen Lee , Lien-Chang Wang
发明人： Chien-Chung Hung , Ming-Jer Kao , Yuan-Jen Lee , Lien-Chang Wang
IPC分类号： G11C11/02 , G11C7/00
CPC分类号： G11C11/1693 , G11C11/1673 , G11C11/1675
摘要： A method for writing a memory cell of a magnetoresistive random access memory (MRAM) device includes, sequentially, providing a first magnetic field in a first direction, providing a second magnetic field in a second direction substantially perpendicular to the first direction, turning off the first magnetic field, providing a third magnetic field in a third direction opposite to the first direction, turning off the second magnetic field, and turning off the third magnetic field. A method for switching magnetic moments in an MRAM memory cell includes providing a magnetic field in a direction forming a blunt angle with a direction of a bias magnetic field. A method for reading an MRAM device includes partially switching magnetic moments in a reference memory cell to generate a reference current; measuring a read current through a memory cell to be read; and comparing the read current with the reference current.
摘要翻译：用于写入磁阻随机存取存储器（MRAM）器件的存储单元的方法包括：依次在第一方向上提供第一磁场，在基本上垂直于第一方向的第二方向上提供第二磁场，第一磁场，在与第一方向相反的第三方向上提供第三磁场，关闭第二磁场，并且关闭第三磁场。用于切换MRAM存储单元中的磁矩的方法包括在与偏置磁场的方向形成钝角的方向上提供磁场。一种用于读取MRAM器件的方法包括部分地转换参考存储器单元中的磁矩以产生参考电流; 测量要读取的存储单元的读取电流; 并将读取的电流与参考电流进行比较。

13. 发明申请

US20080198648A1 WRITING METHOD FOR MAGNETIC MEMORY CELL AND MAGNETIC MEMORY ARRAY STRUCTURE 失效
标题翻译：磁记忆体和磁记忆阵列结构的写入方法
公开(公告)号：US20080198648A1
公开(公告)日：2008-08-21
申请号：US11762085
申请日：2007-06-13
申请人： Yuan-Jen Lee , Ming-Jer Kao
发明人： Yuan-Jen Lee , Ming-Jer Kao
IPC分类号： G11C11/14
CPC分类号： G11C11/16
摘要： A writing method for a magnetic memory cell which has a magnetic free stack layer with a bi-directional easy axis. A magnetic X axis and a magnetic Y axis are taken as reference directions, and the bi-directional easy axis is substantially on the magnetic X axis. The method includes applying a first magnetic field in a first direction of the magnetic Y axis. Then, a second magnetic field added onto the first magnetic field is applied in a first direction of the magnetic X axis. Next, the application of the first magnetic field is terminated. Thereafter, a third magnetic field is applied on the magnetic Y axis in a second direction opposite to the first direction. The second magnetic field is terminated and the third magnetic field is terminated.
摘要翻译：一种具有双向易轴的无磁性堆叠层的磁存储单元的写入方法。磁X轴和磁Y轴作为基准方向，双向易轴基本上在磁X轴上。该方法包括在磁性Y轴的第一方向上施加第一磁场。然后，在磁性X轴的第一方向施加添加到第一磁场上的第二磁场。接下来，终止第一磁场的施加。此后，在与第一方向相反的第二方向上的磁性Y轴上施加第三磁场。第二磁场终止，第三磁场终止。

14. 发明授权

US07359237B2 High write selectivity and low power magnetic random access memory and method for fabricating the same 失效
标题翻译：高写选择性和低功率磁随机存取存储器及其制造方法
公开(公告)号：US07359237B2
公开(公告)日：2008-04-15
申请号：US10846663
申请日：2004-05-17
申请人： Chien-Chung Hung , Ming-Jer Kao , Yung-Hsiang Chen , Shu-En Li
发明人： Chien-Chung Hung , Ming-Jer Kao , Yung-Hsiang Chen , Shu-En Li
IPC分类号： G11C11/15
CPC分类号： G11C11/14
摘要： A low-power magnetic random access memory (MRAM) with high write selectivity is provided. Write word lines and pillar write word lines covered with a magnetic material are disposed in an zigzag relation, solving the magnetic interference problem generated by cells adjacent to the pillar write word line in the magnetic RAM with the pillar write word line form. According to the disclosed structure, each of the cells has a smaller bit size and a lower write current. This effectively reduces the power consumption of the MRAM.
摘要翻译：提供了具有高写入选择性的低功率磁随机存取存储器（MRAM）。写入用磁性材料覆盖的字线和柱写字字线以锯齿形关系布置，解决了具有柱写字线形式的磁RAM中与柱写字字相邻的单元产生的磁干扰问题。根据所公开的结构，每个单元具有较小的位大小和较低的写入电流。这有效地降低了MRAM的功耗。

15. 发明申请

US20070242501A1 STRUCTURE AND ACCESS METHOD FOR MAGNETIC MEMORY CELL AND CIRCUIT OF MAGNETIC MEMORY 失效
标题翻译：磁记忆体和磁记忆电路的结构和访问方法
公开(公告)号：US20070242501A1
公开(公告)日：2007-10-18
申请号：US11465460
申请日：2006-08-18
申请人： Chien-Chung Hung , Yung-Hsiang Chen , Ming-Jer Kao , Yuan-Jen Lee , Yung-Hung Wang
发明人： Chien-Chung Hung , Yung-Hsiang Chen , Ming-Jer Kao , Yuan-Jen Lee , Yung-Hung Wang
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A magnetic memory cell, used in a magnetic memory device, includes a stacked magnetic pinned layer, serving as a part of the base structure. The stacked magnetic pinned stacked layer has a top pinned layer and a bottom pinned layer, between which there is a sufficient large magnetic coupling force to maintain magnetization of the top pinned layer on a reference direction. A tunnel barrier layer is disposed on the stacked magnetic pinned layer. A magnetic free stacked layer is disposed on the tunnel barrier layer. The magnetic free stacked layer includes a bottom free layer having a bottom magnetization and a top free layer having a top magnetization. When no assisted magnetic field is applied, the bottom magnetization is anti-parallel to the top magnetization and is perpendicular to the reference direction on the top pinned layer. A magnetic bias layer can be also disposed on the top free layer.
摘要翻译：在磁存储器件中使用的磁存储单元包括用作基础结构的一部分的层叠磁性固定层。堆叠的磁性钉扎堆叠层具有顶部被钉扎层和底部被钉扎层，在其之间存在足够大的磁耦合力以保持顶部钉扎层在参考方向上的磁化。隧道势垒层设置在堆叠的磁性钉扎层上。无磁性堆叠层设置在隧道势垒层上。无磁性堆叠层包括具有底部磁化的底部自由层和具有顶部磁化强度的顶部自由层。当没有施加辅助磁场时，底部磁化与顶部磁化反平行并且垂直于顶部被钉扎层上的参考方向。磁偏置层也可以设置在顶部自由层上。

16. 发明申请

US20070171704A1 High-bandwidth magnetoresistive random access memory devices and methods of operation thereof 有权
标题翻译：高带宽磁阻随机存取存储器件及其操作方法
公开(公告)号：US20070171704A1
公开(公告)日：2007-07-26
申请号：US11581466
申请日：2006-10-17
申请人： Chien-Chung Hung , Ming-Jer Kao , Yuan-Jen Lee
发明人： Chien-Chung Hung , Ming-Jer Kao , Yuan-Jen Lee
IPC分类号： G11C11/00 , G11C8/00
CPC分类号： G11C11/16 , G11C8/04 , G11C11/5607 , G11C19/00
摘要： A method for accessing a memory cell of a magnetoresistive random access memory (MRAM) device, where the memory cell includes a plurality of memory units, includes writing the memory cell by identifying ones of the memory units having stored therein a datum different from a datum to be written thereto; and simultaneously writing all of the ones of the memory units. An MRAM device includes a plurality of write word lines, a plurality of write bit lines, and a plurality of memory cells. Each memory cell includes a plurality of memory units. Each memory unit includes a free magnetic region having one or more easy axes non-perpendicular to the write bit lines and non-perpendicular to the write word lines, a pinned magnetic region, and a tunneling barrier between the free magnetic region and the pinned magnetic region.
摘要翻译：一种用于访问磁阻随机存取存储器（MRAM）器件的存储单元的方法，其中存储器单元包括多个存储器单元，包括通过识别其中存储有与基准不同的基准的存储器单元来写入存储器单元写入; 并同时写入所有存储单元。 MRAM装置包括多个写字线，多个写位线和多个存储器单元。每个存储单元包括多个存储单元。每个存储单元包括具有一个或多个容易轴的自由磁区，该易磁轴与写位线非垂直并且非垂直于写字线，固定磁区和自由磁区与固定磁之间的隧道势垒地区。

17. 发明申请

US20060148234A1 Non-via method of connecting magnetoelectric elements with conductive line 审中-公开
标题翻译：用电导线连接磁电元件的非通孔方式
公开(公告)号：US20060148234A1
公开(公告)日：2006-07-06
申请号：US11154632
申请日：2005-06-17
申请人： Young-shying Chen , Hong-Hui Hsu , Wei-Chuan Chen , Chun-Fei Chuang , Ming-Jer Kao
发明人： Young-shying Chen , Hong-Hui Hsu , Wei-Chuan Chen , Chun-Fei Chuang , Ming-Jer Kao
IPC分类号： H01L21/00 , H01L21/4763
CPC分类号： H01L43/12
摘要： A non-via method of connecting a magnetoelectric element with a conductive line. A magnetoelectric element is formed on a substrate, and spacers are formed on side walls of the magnetoelectric element. A dielectric layer is deposited over the substrate and magnetoelectric element and planarized to a level above the magnetoelectric element. The dielectric layer is etched to expose the upper surface of the magnetoelectric element, and a conductive line is formed on the magnetoelectric element.
摘要翻译：一种连接磁电元件与导线的非通孔方法。在基板上形成有磁电元件，在磁电元件的侧壁上形成间隔物。介电层沉积在衬底和磁电元件上，并平坦化到高于磁电元件的电平。蚀刻电介质层以暴露磁电元件的上表面，并且在该磁电元件上形成导线。

18. 发明授权

US07001805B2 Method for fabricating n-type carbon nanotube device 失效
标题翻译：制造n型碳纳米管器件的方法
公开(公告)号：US07001805B2
公开(公告)日：2006-02-21
申请号：US10233601
申请日：2002-09-04
申请人： Hung-Hsiang Wang , Jeng-Hua Wei , Ming-Jer Kao
发明人： Hung-Hsiang Wang , Jeng-Hua Wei , Ming-Jer Kao
IPC分类号： H01L21/8234
CPC分类号： H01L51/0541 , B82Y10/00 , H01L21/3185 , H01L51/002 , H01L51/0048 , H01L51/0052 , H01L51/0525 , H01L51/0545 , H01L51/107 , Y10S977/742 , Y10S977/847 , Y10S977/938
摘要： A method for fabricating an n-type carbon nanotube device, characterized in that thermal annealing and plasma-enhanced chemical vapor-phased deposition (PECVD) are employed to form a non-oxide gate layer on a carbon nanotube device. Moreover, the inherently p-type carbon nanotube can be used to fabricate an n-type carbon nanotube device with reliable device characteristics and high manufacturing compatibility.
摘要翻译：一种制造n型碳纳米管器件的方法，其特征在于，使用热退火和等离子体增强化学气相沉积（PECVD）在碳纳米管器件上形成非氧化物栅极层。此外，固有的p型碳纳米管可用于制造具有可靠的器件特性和高制造兼容性的n型碳纳米管器件。

19. 发明申请

US20050135149A1 High write selectivity and low power magnetic random access memory and method for fabricating the same 失效
标题翻译：高写选择性和低功率磁随机存取存储器及其制造方法
公开(公告)号：US20050135149A1
公开(公告)日：2005-06-23
申请号：US10846663
申请日：2004-05-17
申请人： Chien-Chung Hung , Ming-Jer Kao , Yung-Hsiang Chen , Shu-En Li
发明人： Chien-Chung Hung , Ming-Jer Kao , Yung-Hsiang Chen , Shu-En Li
IPC分类号： G11C11/14 , G11C11/16
CPC分类号： G11C11/14
摘要： A low-power magnetic random access memory (MRAM) with high write selectivity is provided. Write word lines and pillar write word lines covered with a magnetic material are disposed in an zigzag relation, solving the magnetic interference problem generated by cells adjacent to the pillar write word line in the magnetic RAM with the pillar write word line form. According to the disclosed structure, each of the cells has a smaller bit size and a lower write current. This effectively reduces the power consumption of the MRAM.
摘要翻译：提供了具有高写入选择性的低功率磁随机存取存储器（MRAM）。写入用磁性材料覆盖的字线和柱写字字线以锯齿形关系布置，解决了具有柱写字线形式的磁RAM中与柱写字字相邻的单元产生的磁干扰问题。根据所公开的结构，每个单元具有较小的位大小和较低的写入电流。这有效地降低了MRAM的功耗。

20. 发明申请

US20050045875A1 Structure and manufacturing process of a nano device transistor for a biosensor 有权
标题翻译：用于生物传感器的纳米器件晶体管的结构和制造工艺
公开(公告)号：US20050045875A1
公开(公告)日：2005-03-03
申请号：US10721876
申请日：2003-11-26
申请人： Ming-Jiunn Lai , Hung-Hsiang Wang , Jeng-Hua Wei , Hsin-Hui Chen , Ming-Jer Kao
发明人： Ming-Jiunn Lai , Hung-Hsiang Wang , Jeng-Hua Wei , Hsin-Hui Chen , Ming-Jer Kao
IPC分类号： G01N27/414 , H01L21/00 , H01L35/24 , H01L51/00
CPC分类号： B82Y5/00 , B82Y15/00 , G01N27/4146 , H01L27/283 , H01L51/0545
摘要： The present invention relates to a structure and manufacturing process of a nano device transistor for a biosensor. The structure, the manufacturing process and the related circuit for a carbon nano tube or nano wire transistor biosensor device are provided. The refurbished nano device is used for absorbing various anti-bodies so as to detect the specific antigens or absorbing various biotins. Therefore, the object of the present invention to detect the specific species for bio measurement can be achieved.
摘要翻译：本发明涉及用于生物传感器的纳米器件晶体管的结构和制造工艺。提供了碳纳米管或纳米线晶体管生物传感器装置的结构，制造工艺和相关电路。翻新的纳米装置用于吸收各种抗体，以便检测特异性抗原或吸收各种生物素。因此，可以实现本发明的检测用于生物测量的具体种类的目的。

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