会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 12. 发明授权
    • Method for producing three-dimensional structures by means of an etching process
    • 通过蚀刻工艺制备三维结构的方法
    • US06663784B1
    • 2003-12-16
    • US09890080
    • 2002-02-04
    • Nils KummerRoland Mueller-FiedlerKlaus BreitschwerdtAndre MuellerFrauke DriewerAndreas Kern
    • Nils KummerRoland Mueller-FiedlerKlaus BreitschwerdtAndre MuellerFrauke DriewerAndreas Kern
    • H01L2100
    • B81C1/00412
    • A method is proposed for producing three-dimensional structures, especially microlenses, in a substrate using an etching process, at least one original shape having a known original surface shape being present initially on the substrate in a plurality of places. The etching process has at least one first etching removal rate a1 and a second etching removal rate a2 which are material-dependent, and of which at least one is changeable as a function of time. The original shape is converted to a target shape by the etching process, the original surface shape of the original shape and the target surface shape of the target shape to be reached being known before the beginning of the etching process. In order to achieve the target surface shape, at least one of the etching rates a2 or a1 is set by a change of at least one etching parameter calculated before the beginning of the etching process as a function of the etching time.
    • 提出了一种使用蚀刻工艺在衬底中制造三维结构,特别是微透镜的方法,至少一种具有已知原始表面形状的原始形状最初存在于多个位置的衬底上。 蚀刻工艺具有与材料有关的至少一个第一蚀刻去除速率a1和第二蚀刻去除速率a2,其中至少一个可随时间变化。 原始形状通过蚀刻处理转换为目标形状,原始形状的原始表面形状和待形成的目标形状的目标表面形状在蚀刻工艺开始之前是已知的。 为了实现目标表面形状,蚀刻速度a2或a1中的至少一个通过蚀刻工艺开始之前计算的至少一个蚀刻参数的变化来设定,作为蚀刻时间的函数。
    • 14. 发明申请
    • Electrical system, especially a microelectronic or microelectromechanical high frequency system
    • 电气系统,特别是微电子或微机电高频系统
    • US20060097388A1
    • 2006-05-11
    • US10520218
    • 2003-06-24
    • Klaus BreitschwerdtMarkus UlmAndrea UrbanMathias Reimann
    • Klaus BreitschwerdtMarkus UlmAndrea UrbanMathias Reimann
    • H01L23/34
    • H01L23/66H01L2223/6616H01L2223/6627H01L2924/15313H01L2924/16152H01L2924/1903H01L2924/3011H01P1/047H01P11/00
    • An electrical component is proposed, in particular a high-frequency microelectronic or microelectromechanical component having a base element that is provided with a feedthrough, a first conductive structure extending on an upper side of the base element being connected by the feedthrough, continuously for high-frequency electromagnetic waves, to a second conductive structure extending on a lower side of the base element. The feedthrough has the form of a right prism or cylinder, and the first and/or the second conductive structure is embodied as a planar waveguide, in particular as a coplanar waveguide. Also proposed is a method for producing an electrical component having a feedthrough for high-frequency electromagnetic waves through a base element, an electrically conductive layer being applied on an upper side of the base element and an etching mask being applied on a lower side of the base element; a trench, having at least almost perpendicular sidewalls and penetrating through the base element, then being etched into the base element in a plasma etching step; an electrically conductive layer being applied on the lower side after the etching and after removal of the etching mask; and the trench lastly being filled or lined with an electrically conductive material.
    • 提出了一种电气元件,特别是具有设置有馈通的基座元件的高频微电子或微机电元件,在基座元件的上侧延伸的第一导电结构,通过馈通连接, 到基底元件的下侧延伸的第二导电结构。 馈通具有右棱镜或圆筒的形式,并且第一和/或第二导电结构被实施为平面波导,特别是作为共面波导。 还提出了一种用于制造具有通过基底元件的高频电磁波的馈通的电气元件的方法,将导电层施加在基底元件的上侧,并且将蚀刻掩模施加在基底元件的下侧 基本元素 沟槽,具有至少几乎垂直的侧壁并穿过基底元件,然后在等离子体蚀刻步骤中蚀刻到基底元件中; 在蚀刻之后和去除蚀刻掩模之后,在下侧施加导电层; 并且沟槽最后被填充或衬有导电材料。