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11. 发明申请

US20050176067A1 Biosensor for determining an allergen with operating procedures 审中-公开
标题翻译：用于通过操作程序确定过敏原的生物传感器
公开(公告)号：US20050176067A1
公开(公告)日：2005-08-11
申请号：US11049953
申请日：2005-02-04
申请人： Maximilian Fleischer , Corinna Haindl , Hans Meixner , Elfriede Simon
发明人： Maximilian Fleischer , Corinna Haindl , Hans Meixner , Elfriede Simon
IPC分类号： C12M1/34 , G01N33/53 , G01N33/537 , G01N33/543 , G01N33/68
CPC分类号： G01N33/5438 , G01N33/6854
摘要： A biosensor is for detecting an allergen-specific immunoglobulin E (IgE) via antigen/antibody coupling. The biosensor includes a silicon substrate and at least one interdigital electrode pair structure applied to the silicon substrate with a gap between the electrode pairs of a maximum of 1.0 μm. A counter electrode is further applied to the silicon substrate. The biosensor also includes a reference electrode. Additionally, coatings are included on the biosensor. A first coat is made from protein coating at least the interdigital electrode structure; a selective second coat is made from protein applied over the first coat, the second coat containing a selected captor antibody; and a third coat is applied over the first coat, which contains the allergen which can couple to the captor antibody. A sensor signal can be readout at the interdigital electrode structure, if an allergen-specific immunoglobulin E (IgE) from a sample of a human blood serum in contact with a biosensor couples to the allergen present on the sensor surface. Further, an enzymatic release of a redox reactive molecule takes place on the sensor surface via an enzyme-marked detection antibody similarly coupled to the allergen-specific immumoglobulin E (IgE).
摘要翻译：生物传感器用于通过抗原/抗体偶联检测变应原特异性免疫球蛋白E（IgE）。生物传感器包括硅衬底和至少一个指状硅电极对结构，其中电极对之间的间隙最大为1.0μm。另外将对电极施加到硅衬底上。生物传感器还包括参比电极。另外，生物传感器上也包含涂层。第一层由蛋白质涂层至少形成叉指电极结构; 选择性第二层由在第一层上施用的蛋白质制成，第二层包含选定的捕获抗体; 并且第三层涂覆在第一层上，其含有可以偶联到捕获体抗体的变应原。如果来自与生物传感器接触的人血清样品的变应原特异性免疫球蛋白E（IgE）与存在于传感器表面上的变应原相耦合，则可以在叉指电极结构处读出传感器信号。此外，通过类似地与变应原特异性免疫球蛋白E（IgE）偶联的酶标记的检测抗体，在传感器表面上发生氧化还原反应性分子的酶促释放。

12. 发明授权

US07851202B2 Biosensor and method for operating the latter 有权
标题翻译：生物传感器和操作后者的方法
公开(公告)号：US07851202B2
公开(公告)日：2010-12-14
申请号：US10588493
申请日：2005-01-27
申请人： Maximilian Fleischer , Corinna Haindl , Hans Meixner , Elfriede Simon
发明人： Maximilian Fleischer , Corinna Haindl , Hans Meixner , Elfriede Simon
IPC分类号： C12M1/34 , C12M1/00 , C12Q1/26 , C12Q1/70
CPC分类号： G01N33/5438
摘要： A biosensor for detecting an antigen using an antigen/antibody coupling includes: a silicon substrate, at least one interdigital electrode pair structure that is located on the silicon substrate, the electrode pair being interspaced at a maximum distance of 1.0 μm; a counter-electrode on the silicon substrate; a reference electrode; a first layer of protein, covering at least the interdigital electrode structure; a selective second protein layer applied to the first layer and containing a capture antibody selected specifically with respect to the antigen of interest and to which the antigen can be coupled. A sensor signal can be read on the interdigital electrode structure, if the antigen is coupled to the capture antibody by way of a sample to be analyzed that comes into contact with the biosensor and a redox reactive molecule is enzymatically released on the sensor surface by an enzyme-marked detection antibody likewise coupled to the antigen.
摘要翻译：用于使用抗原/抗体偶联检测抗原的生物传感器包括：硅衬底，位于硅衬底上的至少一个叉指电极对结构，电极对间隔1.0μm的最大距离; 在硅衬底上的对电极; 参考电极; 蛋白质的第一层，至少覆盖指状电极结构; 选择性第二蛋白质层，其施加到第一层并且含有相对于感兴趣的抗原特异性选择的抗体可以偶联的捕获抗体。如果抗原通过与生物传感器接触的待分析样品与捕获抗体偶联，并且氧化还原反应性分子在传感器表面上被酶促释放，则可以在叉指电极结构上读取传感器信号同样与抗原偶联的酶标记检测抗体。

13. 发明授权

US07707869B2 FET-based gas sensor 有权
标题翻译：基于FET的气体传感器
公开(公告)号：US07707869B2
公开(公告)日：2010-05-04
申请号：US11587172
申请日：2005-04-21
申请人： Maximilian Fleischer , Hans Meixner , Elfriede Simon , Uwe Lampe , Roland Pohle
发明人： Maximilian Fleischer , Hans Meixner , Elfriede Simon , Uwe Lampe , Roland Pohle
IPC分类号： G01N33/00 , B01L5/00
CPC分类号： G01N33/0013 , G01N27/4143
摘要： An operating method is disclosed for the selective detection of a target gas in a gas mixture to be measured by a field effect transistor with a gas-sensitive layer disposed on a carrier substrate, wherein the gas mixture to be measured is prepared by an electrochemical element such that the measured gas mixture includes minimal amounts of interfering gases that interfere with the measurement of the target gas, and/or at least one target gas is activated such that it is detected by the gas-sensitive layer.
摘要翻译：公开了一种操作方法，用于选择性地检测待由气体敏感层设置在载体基底上的场效应晶体管测量的气体混合物中的目标气体，其中待测量的气体混合物由电化学元素使得测量的气体混合物包括干扰目标气体测量的最小量的干扰气体，和/或至少一个目标气体被激活，使得其被气敏层检测到。

14. 发明授权

US07459732B2 Gas-sensitive field-effect transistor with air gap 失效
标题翻译：具有气隙的气敏场效应晶体管
公开(公告)号：US07459732B2
公开(公告)日：2008-12-02
申请号：US11396243
申请日：2006-03-31
申请人： Maximilian Fleischer , Uwe Lampe , Hans Meixner , Roland Pohle , Ralf Schneider , Elfriede Simon
发明人： Maximilian Fleischer , Uwe Lampe , Hans Meixner , Roland Pohle , Ralf Schneider , Elfriede Simon
IPC分类号： H01L27/108
CPC分类号： G01N27/002 , G01N27/414
摘要： A gas-sensitive field-effect transistor may be formed from a substrate with a gas-sensitive layer and a transistor processed separately and then assembled. The substrate may be patterned to form spacers by which the height of an air gap between the transistor and the sensitive layer may be adjustable to a relatively precise degree. Formation of the spacers can be achieved by patterning the substrate using material-removal techniques. The height of the spacers may be adjusted in the layer thickness of the gas-sensitive layer and for the transistor fabricated using a CMOS process. Suitable techniques for producing recesses between the spacers include, for example, polishing, cutting, sandblasting, lithographic dry etching, or wet-chemical etching. Suitable materials for the substrate may include, for example, glass, ceramic, aluminum oxide, silicon, or a dimensionally stable polymer. Following preparation of the substrate and the transistor, the two elements of the transistor are joined, for example, using flip-chip methods or adhesive-bonding technology.
摘要翻译：气体敏感场效应晶体管可以由具有气体敏感层的衬底和分开处理的晶体管形成，然后组装。衬底可以被图案化以形成间隔物，通过该间隔物，晶体管和敏感层之间的气隙的高度可以相对精确地调节。可以通过使用材料去除技术对衬底进行图案化来实现间隔物的形成。间隔物的高度可以在气敏层的层厚度和使用CMOS工艺制造的晶体管中进行调整。用于在间隔件之间产生凹槽的合适技术包括例如抛光，切割，喷砂，光刻干蚀刻或湿法化学蚀刻。用于基材的合适材料可以包括例如玻璃，陶瓷，氧化铝，硅或尺寸稳定的聚合物。在准备衬底和晶体管之后，晶体管的两个元件例如使用倒装芯片方法或粘接技术连接。

15. 发明申请

US20060260737A1 Gas-sensitive field-effect transistor with air gap 失效
标题翻译：具有气隙的气敏场效应晶体管
公开(公告)号：US20060260737A1
公开(公告)日：2006-11-23
申请号：US11396243
申请日：2006-03-31
申请人： Maximilian Fleischer , Uwe Lampe , Hans Meixner , Roland Pohle , Ralf Schneider , Elfriede Simon
发明人： Maximilian Fleischer , Uwe Lampe , Hans Meixner , Roland Pohle , Ralf Schneider , Elfriede Simon
IPC分类号： B32B37/00
CPC分类号： G01N27/002 , G01N27/414
摘要： A gas-sensitive field-effect transistor may be formed from a substrate with a gas-sensitive layer and a transistor processed separately and then assembled. The substrate may be patterned to form spacers by which the height of an air gap between the transistor and the sensitive layer may be adjustable to a relatively precise degree. Formation of the spacers can be achieved by patterning the substrate using material-removal techniques. The height of the spacers may be adjusted in the layer thickness of the gas-sensitive layer and for the transistor fabricated using a CMOS process. Suitable techniques for producing recesses between the spacers include, for example, polishing, cutting, sandblasting, lithographic dry etching, or wet-chemical etching. Suitable materials for the substrate may include, for example, glass, ceramic, aluminum oxide, silicon, or a dimensionally stable polymer. Following preparation of the substrate and the transistor, the two elements of the transistor are joined, for example, using flip-chip methods or adhesive-bonding technology.
摘要翻译：气体敏感场效应晶体管可以由具有气体敏感层的衬底和分开处理的晶体管形成，然后组装。衬底可以被图案化以形成间隔物，通过该间隔物，晶体管和敏感层之间的气隙的高度可以相对精确地调节。可以通过使用材料去除技术对衬底进行图案化来实现间隔物的形成。间隔物的高度可以在气敏层的层厚度和使用CMOS工艺制造的晶体管中进行调整。用于在间隔件之间产生凹槽的合适技术包括例如抛光，切割，喷砂，光刻干蚀刻或湿法化学蚀刻。用于基材的合适材料可以包括例如玻璃，陶瓷，氧化铝，硅或尺寸稳定的聚合物。在准备衬底和晶体管之后，晶体管的两个元件例如使用倒装芯片方法或粘接技术连接。

16. 发明申请

US20080274559A1 Gas Sensor for Determining Ammonia 审中-公开
标题翻译：气体传感器用于测定氨
公开(公告)号：US20080274559A1
公开(公告)日：2008-11-06
申请号：US11629550
申请日：2005-06-13
申请人： Maximilian Fleischer , Hans Meixner , Roland Pohle , Kerstin Wiesner
发明人： Maximilian Fleischer , Hans Meixner , Roland Pohle , Kerstin Wiesner
IPC分类号： G01N27/00 , B01J19/00
CPC分类号： G01N33/0054 , Y02A50/246 , Y10T436/175383
摘要： The invention relates to a gas sensor which is used to detect ammonia by detecting and evaluating conductivity variations on semi-conductive metal oxides, comprising: a substrate, a gas sensitive layer made of a semi-conductive metal oxide, a catalytic filter which is disposed in front of the metal oxide, said filter being used to convert ammonia, contained in the measuring gas, into a NO/NO2 mixture or to only NO2, measuring electrodes which are arranged on the surface of the substrate in order to detect conductivity variations in the semi-conductive metal oxide which is at least sensitive to NO/NO2, a controllable electric heating device which is used to adjust predetermined temperatures at least for the semi-conductive metal oxide, whereby the formed NO/NO2 can be guided to the metal oxide and the content of ammonia in the measuring gas can be determined from the NO/NO2-measurement by means of the semi-conductive metal oxide.
摘要翻译：本发明涉及一种用于通过检测和评估半导电金属氧化物的导电率变化来检测氨的气体传感器，包括：基板，由半导体金属氧化物制成的气敏层，设置在催化过滤器在金属氧化物的前面，所述过滤器用于将包含在测量气体中的氨转化为NO / NO 2混合物或仅将NO2测量电极设置在衬底的表面上，以便检测电导率变化至少对NO / NO2敏感的半导体金属氧化物，至少用于半导体金属氧化物调节预定温度的可控电加热装置，由此所形成的NO / NO 2可被引导到金属氧化物，测定气体中的氨的含量可以通过半导体金属氧化物从NO / NO 2测定中求出。

17. 发明申请

US20060163483A1 Device and method for monitoring the oxygen concentration in an aircraft tank 失效
标题翻译：用于监测飞机罐中氧气浓度的装置和方法
公开(公告)号：US20060163483A1
公开(公告)日：2006-07-27
申请号：US10559261
申请日：2004-06-08
申请人： Gilles Chabanis , Maximilian Fleischer , Philippe Mangon , Hans Meixner , Rainer Strzoda
发明人： Gilles Chabanis , Maximilian Fleischer , Philippe Mangon , Hans Meixner , Rainer Strzoda
IPC分类号： G01J5/02
CPC分类号： B64D37/32 , G01N21/3504 , G01N21/39
摘要： The invention relates to a device for monitoring the oxygen concentration in an aircraft tank. The device includes an absorption measuring section equipped with a laser or laser diode (6), a photodiode (7), a temperature sensor (8) and a reflector (5) for carrying out laser spectroscopy on a gas volume to be measured inside the tank. The conducting components of the device are positioned outside the tank and its reflector (5) is positioned in the tank in the gas volume to be measured, the components and reflector being optically coupled by a window (3) that is situated in the tank wall (2). The absorption measuring section is mainly located in the chamber containing the gas to be measured.
摘要翻译：本发明涉及一种用于监测飞机罐中的氧气浓度的装置。该装置包括配备有激光或激光二极管（6），光电二极管（7），温度传感器（8）和反射器（5）的吸收测量部分，用于在待测量的气体体积上进行激光光谱坦克。装置的导电部件位于罐外部，其反射器（5）在待测量的气体体积中定位在罐中，部件和反射器通过位于罐壁中的窗口（3）光学耦合（2）。吸收测量部分主要位于包含要测量气体的腔室中。

18. 发明申请

US20070181426A1 Fet-based sensor for detecting reducing gases or alcohol, and associated production and operation method 审中-公开
标题翻译：用于检测还原气体或酒精的基于Fet的传感器，以及相关的生产和操作方法
公开(公告)号：US20070181426A1
公开(公告)日：2007-08-09
申请号：US11587070
申请日：2005-04-21
申请人： Maximilian Fleischer , Gabor Kiss , Hans Meixner , Uwe Lampe
发明人： Maximilian Fleischer , Gabor Kiss , Hans Meixner , Uwe Lampe
IPC分类号： G01N27/26 , G01F1/64
CPC分类号： G08B17/117 , G01N27/4141
摘要： An FET-based gas sensor includes at least one field-effect transistor and at least one gas-sensitive layer and a reference layer. Any changes in work function occurring when materials of the layers are exposed to a gas are used to trigger the field-effect structures. The gas-sensitive layer includes a metal oxide having an oxidation catalyst on its surface and accessible to the measured gas.
摘要翻译：基于FET的气体传感器包括至少一个场效应晶体管和至少一个气体敏感层和参考层。用于暴露于气体的层的材料发生的作用函数的任何变化被用于触发场效应结构。气敏层包括其表面上具有氧化催化剂的金属氧化物，并且可被测量的气体接近。

19. 发明申请

US20060086580A1 Device for shock absorption by means of piezoelectric actuators 审中-公开
标题翻译：通过压电致动器减震的装置
公开(公告)号：US20060086580A1
公开(公告)日：2006-04-27
申请号：US10515323
申请日：2003-05-22
申请人： Maximilian Fleischer , Reinhard Freitag , Hans Meixner
发明人： Maximilian Fleischer , Reinhard Freitag , Hans Meixner
IPC分类号： F16F9/512
CPC分类号： F16F9/3214 , F16F9/466 , F16F2224/0283
摘要： A connection between a piezoelectric stack/actuator and a mobile object in a damping mechanism. The connection is embodied in such a way that a cross-section of the object expands via electrical control of the piezoelectric stack or the width of through-openings in the object varies, enabling the width of a passage for the liquid contained in the damping housing to be determined. The invention is advantageous in that a plurality of embodiments can be achieved as a result of the fundamentally simple inventive device, but basically in that a significantly improved reaction time and variability of the damping properties are ensured as a result of an especially simple device.
摘要翻译：压电叠层/致动器与阻尼机构中的移动物体之间的连接。该连接体以这样的方式实现，即物体的横截面通过压电叠层的电气控制而膨胀，或者物体中的通孔的宽度变化，从而使包含在阻尼壳体中的液体通道的宽度待定本发明的优点在于，作为本发明的基本简单的装置可以实现多个实施例，但是基本上由于特别简单的装置，确保了显着改善的反应时间和阻尼特性的变化性。

20. 发明授权

US06353225B1 Method for the selective detection of gasses and gas sensor for carrying out this method 失效
标题翻译：用于气体和气体传感器的选择性检测方法
公开(公告)号：US06353225B1
公开(公告)日：2002-03-05
申请号：US09065336
申请日：1998-04-23
申请人： Rainer Strzoda , Erhard Magori , Maximilian Fleischer , Hans Meixner
发明人： Rainer Strzoda , Erhard Magori , Maximilian Fleischer , Hans Meixner
IPC分类号： G01N2135
CPC分类号： G01N21/39
摘要： A method an apparatus uses the narrow-band measurement of the absorption of given spectral lines of a gas using laser light sources, so that the spectrally resolved measurement of individual absorption lines, and thus the selection of an individual gas component, is possible. A laser diode which is operated at a higher temperature is correspondingly varied over a certain temperature region, wherein the selected spectral line is crossed. On the basis of absorption measurements, the method and sensor deliver the gas concentration, with a high selectivity.
摘要翻译：一种装置的方法是使用激光源对气体的给定谱线的吸收进行窄带测量，从而可以对各吸收线进行光谱分辨测量，从而可以选择各个气体成分。在较高温度下操作的激光二极管在一定温度区域相应地变化，其中所选择的光谱线被交叉。在吸收测量的基础上，该方法和传感器以高选择性提供气体浓度。

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