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11. 发明申请

US20120286231A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120286231A1
公开(公告)日：2012-11-15
申请号：US13574405
申请日：2011-01-21
申请人： Yukishige Saito , Kimihiko Ito , Hiromitsu Hada
发明人： Yukishige Saito , Kimihiko Ito , Hiromitsu Hada
IPC分类号： H01L45/00 , H01L21/02
CPC分类号： H01L23/5228 , H01L45/04 , H01L45/1233 , H01L45/145 , H01L45/1675 , H01L2924/0002 , H01L2924/00
摘要： Disclosed is a semiconductor device including a resistive change element between a first wiring and a second wiring, which are arranged in a vertical direction so as to be adjacent to each other, with an interlayer insulation film being interposed on a semiconductor substrate. The resistive change element includes a lower electrode, a resistive change element film made of a metal oxide and an upper electrode. Since the upper electrode on the resistive change element film is formed as part of a plug for the second wiring, a structure in which a side surface of the upper electrode is not in direct contact with the side surface of the metal oxide or the lower electrode is provided so that it is possible to realize excellent device characteristics, even when a byproduct is adhered to the side wall of the metal oxide or the lower electrode in the etching thereof.
摘要翻译：公开了一种半导体器件，其包括在第一布线和第二布线之间的电阻变化元件，它们在垂直方向上彼此相邻地布置，层间绝缘膜插入在半导体衬底上。电阻变化元件包括下电极，由金属氧化物和上电极制成的电阻变化元件膜。由于电阻变化元件膜上的上电极被形成为用于第二布线的插头的一部分，所以上电极的侧表面不与金属氧化物或下电极的侧表面直接接触的结构即使在其蚀刻中副产物附着在金属氧化物或下电极的侧壁上时，也可以实现优异的器件特性。

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