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11. 发明申请

US20110233623A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110233623A1
公开(公告)日：2011-09-29
申请号：US12965649
申请日：2010-12-10
申请人： Ki Yeol PARK , Woo Chul Jeon , Young Hwan Park , Jung Hee Lee
发明人： Ki Yeol PARK , Woo Chul Jeon , Young Hwan Park , Jung Hee Lee
IPC分类号： H01L29/778 , H01L21/336
CPC分类号： H01L29/7786 , H01L29/0649 , H01L29/2003 , H01L29/365 , H01L29/4236 , H01L29/66462 , H01L29/78681
摘要： There is provided a semiconductor device and a method of manufacturing the same. The semiconductor device includes a base substrate; a semiconductor layer having a receiving groove, a protrusion part, a first carrier injection layer, at least two insulating patterns, and a second carrier injection layer provided on the base substrate, the insulating patterns being disposed to traverse the first carrier injection layer and the second carrier injection layer being spaced apart from the first carrier injection layer and disposed on a lower portion of the protrusion part; a source electrode and a drain electrode disposed to be spaced apart from each other on the semiconductor layer; and a gate electrode insulated from the source electrode and the drain electrode and having a recess part recessed into the receiving groove, wherein a lowest portion of the receiving groove contacts an uppermost layer of the first carrier injection layer or is disposed above the uppermost layer thereof, and an insulating pattern, disposed at an innermost portion of the semiconductor layer among the insulating patterns, traverses the first carrier injection layer and is disposed at the outside of both sides of the receiving groove in a thickness direction thereof.
摘要翻译：提供了一种半导体器件及其制造方法。半导体器件包括：基底; 具有接收槽的半导体层，突起部分，第一载流子注入层，至少两个绝缘图案和设置在基底基板上的第二载流子注入层，绝缘图案设置成穿过第一载流子注入层和第二载体注入层与第一载体注入层间隔开并设置在突出部分的下部; 源电极和漏电极，设置成在半导体层上彼此间隔开; 以及与源电极和漏电极绝缘的栅电极，并且具有凹入到所述接收槽中的凹部，其中所述接收槽的最下部接触所述第一载流子注入层的最上层，或者设置在所述第一载流子注入层的最上层并且绝缘图案设置在绝缘图案中的半导体层的最内部，穿过第一载流子注入层，并且沿着其厚度方向设置在容纳槽的两侧的外侧。

12. 发明授权

US08426939B2 Semiconductor device and method for manufacturing of the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08426939B2
公开(公告)日：2013-04-23
申请号：US12654935
申请日：2010-01-08
申请人： Woo Chul Jeon , Jung Hee Lee , Young Hwan Park , Ki Yeol Park
发明人： Woo Chul Jeon , Jung Hee Lee , Young Hwan Park , Ki Yeol Park
IPC分类号： H01L29/739
CPC分类号： H01L29/861 , H01L29/417 , H01L29/66143 , H01L29/872
摘要： The present invention provides a semiconductor device including: a base substrate; a first semiconductor layer which is disposed on the base substrate and has a front surface and a rear surface opposite to the front surface; first ohmic electrodes disposed on the front surface of the first semiconductor layer; a second ohmic electrode disposed on the rear surface of the first semiconductor layer; a second semiconductor layer interposed between the first semiconductor layer and the first ohmic electrodes; and a Schottky electrode part which covers the first ohmic electrodes on the front surface of the first semiconductor layer.
摘要翻译：本发明提供一种半导体器件，包括：基底; 第一半导体层，其设置在所述基底基板上，并且具有与所述前表面相对的前表面和后表面; 设置在第一半导体层的前表面上的第一欧姆电极; 设置在所述第一半导体层的后表面上的第二欧姆电极; 插入在第一半导体层和第一欧姆电极之间的第二半导体层; 以及肖特基电极部分，其覆盖第一半导体层的前表面上的第一欧姆电极。

13. 发明申请

US20110049572A1 Semiconductor device and method for manufacturing of the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20110049572A1
公开(公告)日：2011-03-03
申请号：US12654936
申请日：2010-01-08
申请人： Woo Chul Jeon , Jung Hee Lee , Young Hwan Park , Ki Yeol Park
发明人： Woo Chul Jeon , Jung Hee Lee , Young Hwan Park , Ki Yeol Park
IPC分类号： H01L29/205 , H01L29/872 , H01L21/329
CPC分类号： H01L29/872 , H01L29/2003 , H01L29/205 , H01L29/402 , H01L29/475 , H01L29/66212 , H01L29/7787
摘要： The present invention provides a semiconductor device including: a base substrate; a semiconductor layer which is disposed on the base substrate and has a 2-Dimensional Electron Gas (2DEG) formed therewithin; a first ohmic electrode disposed on a central region of the semiconductor layer; a second ohmic electrode which is formed on the edge regions of the semiconductor layer in such a manner to be disposed to be spaced apart from the first ohmic electrodes, and have a ring shape surrounding the first ohmic electrode; and a Schottky electrode part which is formed on the central region to cover the first ohmic electrode and is formed to be spaced apart from the second ohmic electrode.
摘要翻译：本发明提供一种半导体器件，包括：基底; 半导体层，其设置在所述基底基板上并具有在其中形成的二维电子气体（2DEG）; 设置在所述半导体层的中心区域上的第一欧姆电极; 形成在所述半导体层的边缘区域上的第二欧姆电极，以与所述第一欧姆电极间隔开的方式设置，并且具有环绕所述第一欧姆电极的环形形状; 以及形成在中心区域上以覆盖第一欧姆电极并形成为与第二欧姆电极间隔开的肖特基电极部分。

14. 发明授权

US08637902B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08637902B2
公开(公告)日：2014-01-28
申请号：US12907653
申请日：2010-10-19
申请人： Ki Yeol Park , Woo Chul Jeon , Young Hwan Park , Jung Hee Lee
发明人： Ki Yeol Park , Woo Chul Jeon , Young Hwan Park , Jung Hee Lee
IPC分类号： H01L29/737 , H01L29/778
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/41725 , H01L29/66462
摘要： There is provided a semiconductor device having a High Electron Mobility Transistor (HEMT) structure allowing for enhanced performance and a method of manufacturing the same. The semiconductor device includes a base substrate; a semiconductor layer provided on the base substrate; a source electrode, a gate electrode and a drain electrode provided on the semiconductor layer to be spaced apart from one another; and an ohmic-contact layer partially provided at an interface between the drain electrode and the semiconductor layer.
摘要翻译：提供了具有允许增强性能的高电子迁移率晶体管（HEMT）结构的半导体器件及其制造方法。半导体器件包括：基底; 设置在所述基底基板上的半导体层; 源电极，栅电极和漏极，设置在所述半导体层上以彼此间隔开; 以及部分地设置在漏电极和半导体层之间的界面处的欧姆接触层。

15. 发明授权

US08319309B2 Semiconductor device and method for manufacturing of the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08319309B2
公开(公告)日：2012-11-27
申请号：US12654936
申请日：2010-01-08
申请人： Woo Chul Jeon , Jung Hee Lee , Young Hwan Park , Ki Yeol Park
发明人： Woo Chul Jeon , Jung Hee Lee , Young Hwan Park , Ki Yeol Park
IPC分类号： H01L27/095
CPC分类号： H01L29/872 , H01L29/2003 , H01L29/205 , H01L29/402 , H01L29/475 , H01L29/66212 , H01L29/7787
摘要： The present invention provides a semiconductor device including: a base substrate; a semiconductor layer which is disposed on the base substrate and has a 2-Dimensional Electron Gas (2DEG) formed therewithin; a first ohmic electrode disposed on a central region of the semiconductor layer; a second ohmic electrode which is formed on the edge regions of the semiconductor layer in such a manner to be disposed to be spaced apart from the first ohmic electrodes, and have a ring shape surrounding the first ohmic electrode; and a Schottky electrode part which is formed on the central region to cover the first ohmic electrode and is formed to be spaced apart from the second ohmic electrode.
摘要翻译：本发明提供一种半导体器件，包括：基底; 半导体层，其设置在所述基底基板上并具有在其中形成的二维电子气体（2DEG）; 设置在所述半导体层的中心区域上的第一欧姆电极; 形成在所述半导体层的边缘区域上的第二欧姆电极，以与所述第一欧姆电极间隔开的方式设置，并且具有环绕所述第一欧姆电极的环形形状; 以及形成在中心区域上以覆盖第一欧姆电极并形成为与第二欧姆电极间隔开的肖特基电极部分。

16. 发明申请

US20110233612A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110233612A1
公开(公告)日：2011-09-29
申请号：US12907653
申请日：2010-10-19
申请人： Ki Yeol PARK , Woo Chul Jeon , Young Hwan Park , Jung Hee Lee
发明人： Ki Yeol PARK , Woo Chul Jeon , Young Hwan Park , Jung Hee Lee
IPC分类号： H01L29/778 , H01L21/335
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/41725 , H01L29/66462
摘要： There is provided a semiconductor device having a High Electron Mobility Transistor (HEMT) structure allowing for enhanced performance and a method of manufacturing the same. The semiconductor device includes a base substrate; a semiconductor layer provided on the base substrate; a source electrode, a gate electrode and a drain electrode provided on the semiconductor layer to be spaced apart from one another; and an ohmic-contact layer partially provided at an interface between the drain electrode and the semiconductor layer.
摘要翻译：提供了具有允许增强性能的高电子迁移率晶体管（HEMT）结构的半导体器件及其制造方法。半导体器件包括：基底; 设置在所述基底基板上的半导体层; 源电极，栅电极和漏极，设置在所述半导体层上以彼此间隔开; 以及部分地设置在漏电极和半导体层之间的界面处的欧姆接触层。

17. 发明申请

US20110057234A1 Semiconductor device and method for manufacturing of the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20110057234A1
公开(公告)日：2011-03-10
申请号：US12654940
申请日：2010-01-08
申请人： Woo Chul Jeon , Jung Hee Lee , Young Hwan Park , Ki Yeol Park
发明人： Woo Chul Jeon , Jung Hee Lee , Young Hwan Park , Ki Yeol Park
IPC分类号： H01L29/778 , H01L21/335
CPC分类号： H01L29/66007 , H01L21/02521 , H01L29/0692 , H01L29/2003 , H01L29/66143 , H01L29/872
摘要： Disclosed is a semiconductor device including: a base substrate; a semiconductor layer disposed on the base substrate; an ohmic electrode part which has ohmic electrode lines disposed in a first direction, on the semiconductor layer; and a Schottky electrode part which is disposed to be spaced apart from the ohmic electrode lines on the semiconductor layer and includes Schottky electrode lines disposed in the first direction, wherein the Schottky electrode lines and the ohmic electrode lines are alternately disposed in parallel, and the ohmic electrode part further includes first ohmic electrodes covered by the Schottky electrode lines on the semiconductor layer.
摘要翻译：公开了一种半导体器件，包括：基底; 设置在所述基底基板上的半导体层; 在所述半导体层上具有沿第一方向设置的欧姆电极线的欧姆电极部; 以及肖特基电极部，其设置为与半导体层上的欧姆电极线间隔开，并且包括沿第一方向设置的肖特基电极线，其中肖特基电极线和欧姆电极线交替地平行设置，并且欧姆电极部分还包括由半导体层上的肖特基电极线覆盖的第一欧姆电极。

18. 发明申请

US20110057231A1 Semiconductor device and method for manufacturing of the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20110057231A1
公开(公告)日：2011-03-10
申请号：US12654897
申请日：2010-01-07
申请人： Woo Chul Jeon , Jung Hee Lee , Young Hwan Park , Ki Yeol Park
发明人： Woo Chul Jeon , Jung Hee Lee , Young Hwan Park , Ki Yeol Park
IPC分类号： H01L29/47 , H01L21/20 , H01L21/28
CPC分类号： H01L29/0692 , H01L29/861 , H01L29/872
摘要： The present invention provides a semiconductor device including: a base substrate; a first semiconductor layer disposed on the base substrate; first ohmic electrodes disposed on a central region of the first semiconductor layer; a second ohmic electrode having a ring shape surrounding the first ohmic electrodes, on edge regions of the first semiconductor layer; a second semiconductor layer interposed between the first ohmic electrodes and the first semiconductor layer; and a Schottky electrode part which covers the first ohmic electrodes on the central regions, and is spaced apart from the second ohmic electrode.
摘要翻译：本发明提供一种半导体器件，包括：基底; 设置在所述基底基板上的第一半导体层; 设置在第一半导体层的中心区域上的第一欧姆电极; 在所述第一半导体层的边缘区域上具有围绕所述第一欧姆电极的环形形状的第二欧姆电极; 插入在所述第一欧姆电极和所述第一半导体层之间的第二半导体层; 以及肖特基电极部件，其覆盖中心区域上的第一欧姆电极，并且与第二欧姆电极间隔开。

19. 发明申请

US20120267642A1 Nitride semicondutor device and manufacturing method thereof 有权
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US20120267642A1
公开(公告)日：2012-10-25
申请号：US13137311
申请日：2011-08-04
申请人： Woo Chul Jeon , Ki Yeol Park , Young Hwan Park
发明人： Woo Chul Jeon , Ki Yeol Park , Young Hwan Park
IPC分类号： H01L29/12 , H01L21/335 , H01L29/778
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/402 , H01L29/42368 , H01L29/42376 , H01L29/475 , H01L29/66462
摘要： Provided is a nitride semiconductor device including: a nitride semiconductor layer over a substrate wherein the nitride semiconductor has a two-dimensional electron gas (2DEG) channel inside; a drain electrode in ohmic contact with the nitride semiconductor layer; a source electrode in Schottky contact with the nitride semiconductor layer wherein the source electrode is spaced apart from the drain electrode; a dielectric layer formed on the nitride semiconductor layer between the drain electrode and the source electrode and on at least a portion of the source electrode; and a gate electrode disposed on the dielectric layer to be spaced apart from the drain electrode, wherein a portion of the gate electrode is formed over a drain-side edge portion of the source electrode with the dielectric layer interposed therebetween, and a manufacturing method thereof.
摘要翻译：提供一种氮化物半导体器件，其包括：氮化物半导体层，其在氮化物半导体内部具有二维电子气体（2DEG）通道的衬底上; 与氮化物半导体层欧姆接触的漏电极; 与氮化物半导体层肖特基接触的源电极，其中源电极与漏电极间隔开; 形成在所述氮化物半导体层上的所述漏电极和所述源电极之间以及所述源电极的至少一部分上的电介质层; 以及设置在所述电介质层上以与所述漏极间隔开的栅电极，其中所述栅电极的一部分形成在所述源电极的漏极侧边缘部分之间，并且介电层插入其间;以及其制造方法。

20. 发明申请

US20130082277A1 NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US20130082277A1
公开(公告)日：2013-04-04
申请号：US13442494
申请日：2012-04-09
申请人： Young Hwan PARK , Woo Chul Jeon , Ki Yeol Park , Seok Yoon Hong
发明人： Young Hwan PARK , Woo Chul Jeon , Ki Yeol Park , Seok Yoon Hong
IPC分类号： H01L29/20 , H01L21/335
CPC分类号： H01L29/41725 , H01L29/2003 , H01L29/42316 , H01L29/66462 , H01L29/7787
摘要： The present invention relates to a nitride semiconductor device and a manufacturing method thereof. According to one aspect of the present invention, a nitride semiconductor device including: a nitride semiconductor layer having a 2DEG channel; a source electrode in ohmic contact with the nitride semiconductor layer; a drain electrode in ohmic contact with the nitride semiconductor layer; a plurality of p-type nitride semiconductor segments formed on the nitride semiconductor layer and each formed lengthways from a first sidewall thereof, which is spaced apart from the source electrode, to a drain side; and a gate electrode formed to be close to the source electrode and in contact with the nitride semiconductor layer between the plurality of p-type semiconductor segments and portions of the p-type semiconductor segments extending in the direction of a source-side sidewall of the gate electrode aligned with the first sidewalls of the p-type nitride semiconductor segments is provided.
摘要翻译：本发明涉及一种氮化物半导体器件及其制造方法。根据本发明的一个方面，一种氮化物半导体器件包括：具有2DEG通道的氮化物半导体层; 与氮化物半导体层欧姆接触的源电极; 与氮化物半导体层欧姆接触的漏电极; 多个p型氮化物半导体段形成在氮化物半导体层上，并且每个从源极电极间隔开的第一侧壁纵向形成到漏极侧; 以及栅电极，其形成为靠近所述源电极并且与所述多个p型半导体区段之间的所述氮化物半导体层和所述p型半导体区段沿所述源极侧侧壁的方向延伸的部分接触提供了与p型氮化物半导体段的第一侧壁对准的栅电极。

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