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11. 发明授权

US4617248A Doped photoconductive film including selenium and tellurium 失效
标题翻译：掺杂的光电导膜包括硒和碲
公开(公告)号：US4617248A
公开(公告)日：1986-10-14
申请号：US736149
申请日：1985-05-20
申请人： Kenkichi Tanioka , Keiichi Shidara , Takao Kuriyama , Yukio Takasaki , Tadaaki Hirai , Yasuhiko Nonaka , Eisuke Inoue
发明人： Kenkichi Tanioka , Keiichi Shidara , Takao Kuriyama , Yukio Takasaki , Tadaaki Hirai , Yasuhiko Nonaka , Eisuke Inoue
IPC分类号： H01J31/26 , H01J1/78 , H01J29/45 , H01L31/0248 , H01L31/08 , G03G5/08 , G03G5/09
CPC分类号： H01J29/456
摘要： A structure of a photoconductive film related to a target of an image pickup tube of the photo conductivity type is disclosed. This photoconductive film is formed from mainly Se and Te is added in a central part thereof. Further, As, which is considered to form a deep trap level which captures electrons in Se and GaF.sub.3, etc. which form negative space charges by capturing electrons in Se are added in the region adjacent to the region where Te exists. In addition, a thickness of film in the region where GaF.sub.3, etc. exists is selected to be thinner (not smaller than 20 .ANG. and not larger than 90 .ANG.) than a value which has been adopted so far.
摘要翻译：公开了与光电导型的图像拾取管的靶相关的光电导膜的结构。该感光膜主要由Se形成，Te的中心部分添加Te。此外，被认为形成通过在Se中捕获电子而形成负空间电荷的Se和GaF 3等中的电子形成深阱陷阱的As被添加在与Te存在的区域相邻的区域中。此外，存在GaF 3等的区域中的膜的厚度比迄今采用的值更薄（不小于20，不大于90）。

12. 发明授权

US4463279A Doped photoconductive film comprising selenium and tellurium 失效
标题翻译：包含硒和碲的掺杂光导膜
公开(公告)号：US4463279A
公开(公告)日：1984-07-31
申请号：US380779
申请日：1982-05-21
申请人： Keiichi Shidara , Kenkichi Tanioka , Teruo Uchida , Chushirou Kusano , Yukio Takasaki , Yasuhiko Nonaka , Eisuke Inoue
发明人： Keiichi Shidara , Kenkichi Tanioka , Teruo Uchida , Chushirou Kusano , Yukio Takasaki , Yasuhiko Nonaka , Eisuke Inoue
IPC分类号： H01L31/0248 , H01J29/45 , H01L31/08 , H01J31/38
CPC分类号： H01L31/08 , H01J29/456
摘要： A photoconductive film comprising a photo-conductive layer which is mainly made of selenium and a region added with tellurium in a direction of the thickness of the layer, wherein at least either one of a portion in a direction of hole flow of said region added with tellurium and a portion in the hole flow of another region which is located adjacent to said region added with tellurium is doped with at least one member selected from the group consisting of an oxide, a fluoride and elements which belong to the group II, III and VII, which are capable of forming a negative space charge in selenium, at a concentration in a range of 10 ppm to 1% by weight on an average. Typical examples of such oxide, fluoride and element include CuO, In.sub.2 O.sub.3, SeO.sub.2, V.sub.2 O.sub.5, MoO.sub.3, WO.sub.3, GaF.sub.2 InF.sub.3, Zn, Ga, In, Cl, I, Br and the like. The after image characteristic ascribable to incident light of high intensity can be significantly improved.
摘要翻译：一种光导电膜，其包含主要由硒制成的光导电层和在层的厚度方向上添加有碲的区域，其中所述区域的空穴流动方向上的一部分中的至少一个添加有碲和与添加有碲的所述区域相邻的另一区域的空穴流中的一部分掺杂有选自氧化物，氟化物和属于II，III族的元素中的至少一种，以及 VII能够在硒中形成负空间电荷，浓度平均为10〜1重量％。这种氧化物，氟化物和元素的典型实例包括CuO，In2O3，SeO2，V2O5，MoO3，WO3，GaF2 + L，InF3，Zn，Ga，In，Cl，I，Br等。可以显着提高归因于高强度入射光的后图像特性。

13. 发明授权

US5021705A Method of fabricating an image pick-up tube and target section used therewith 失效
标题翻译：制造图像拾取管的方法和与其一起使用的目标部分
公开(公告)号：US5021705A
公开(公告)日：1991-06-04
申请号：US357513
申请日：1989-05-24
申请人： Masanao Yamamoto , Takaaki Unnai , Shigeru Ehata , Tadaaki Hirai , Kenji Sameshima , Eikiyu Hiruma , Shirou Suzuki , Kenkichi Tanioka , Junichi Yamazaki , Keiichi Shidara
发明人： Masanao Yamamoto , Takaaki Unnai , Shigeru Ehata , Tadaaki Hirai , Kenji Sameshima , Eikiyu Hiruma , Shirou Suzuki , Kenkichi Tanioka , Junichi Yamazaki , Keiichi Shidara
IPC分类号： H01J9/233 , H01J29/45 , H01J31/26 , H01J31/38
CPC分类号： H01J29/456 , H01J9/233
摘要： An image pick-up tube and a method of fabricating an image pick-up tube and a target section used therewith, in which the target includes at least a conductive film and a photoconductive film on a substrate for photo-electric conversion, and a signal from the target section is read by an electron beam scanning system. At least a part of the surface area outside the effective scanning region of the electron beam scanning side of the target section is formed of a secondary electron emission dampening layer.
摘要翻译：一种图像拾取管及其制造方法，其中所述目标在至少包括用于光电转换的基板上的导电膜和光电导膜，以及信号从目标部分通过电子束扫描系统读取。目标部分的电子束扫描侧的有效扫描区域外的表面区域的至少一部分由二次电子发射阻挡层形成。

14. 发明授权

US4860093A Method and apparatus for driving a plurality of pick-up tubes having their cathodes supplied by a common negative potential 失效
标题翻译：用于驱动多个拾取管的方法和装置，其阴极由共同的负电位提供
公开(公告)号：US4860093A
公开(公告)日：1989-08-22
申请号：US143655
申请日：1988-01-13
申请人： Takashi Yamashita , Keiichi Shidara , Masaaki Aiba , Yukio Takasaki , Tadaaki Hirai
发明人： Takashi Yamashita , Keiichi Shidara , Masaaki Aiba , Yukio Takasaki , Tadaaki Hirai
IPC分类号： H04N5/228 , H04N9/09
CPC分类号： H04N5/228 , H04N9/09
摘要： The present invention relates to a method and an apparatus for driving image pick-up tubes in, particular, a color television camera or the like having more than one image pick-up tube and in particular to a method and an apparatus for driving image pick-up tubes in which the potentials of the cathode electrodes of the respective image pick-up tubes are set to the same common potential, the potential of the target electrode of at least one of the image pick-up tubes is set substantially to earth potential, target drive potentials are individually applied to the target electrodes of the other image pick-up tubes, and the target potential of each image pick-up tube is set to a value near the earth potential, so that a high S/N ratio is obtained. The driving appartatus can be miniaturized and easily driven. According to the invention, a capacitor, such as a chip capcitor or the like, with a low withstanding voltage can be used in a first-stage amplifier to amplify the video signal from the target electrode. This first-stage amplifier can be arranged near a signal output electrode of the target. Thus, the stray capacitance can be reduced.
摘要翻译：本发明涉及一种用于驱动图像拾取管的方法和装置，特别是具有多于一个图像拾取管的彩色电视摄像机等，特别涉及一种用于驱动图像拾取的方法和装置将各个图像拾取管的阴极的电位设定为相同的公共电位的至少一个摄像管的目标电极的电位基本上设定为接地电位的管将目标驱动电位分别施加到其他摄像管的目标电极，并且将每个摄像管的目标电位设置为接近地电位的值，使得高S / N比为获得。驾驶舱可以小型化，易于驾驶。根据本发明，可以在第一级放大器中使用诸如芯片电容器等具有低耐压的电容器来放大来自目标电极的视频信号。该第一级放大器可以布置在目标的信号输出电极附近。因此，可以减小杂散电容。

15. 发明授权

US5070272A Photoconductive device and method of operating same 失效
标题翻译：光电装置及其操作方法
公开(公告)号：US5070272A
公开(公告)日：1991-12-03
申请号：US547226
申请日：1990-07-03
申请人： Takeshi Kikawa , Kazutaka Tsuji , Kenji Sameshima , Tadaaki Hirai , Junichi Yamazaki , Misao Kubota , Keiichi Shidara
发明人： Takeshi Kikawa , Kazutaka Tsuji , Kenji Sameshima , Tadaaki Hirai , Junichi Yamazaki , Misao Kubota , Keiichi Shidara
IPC分类号： H01J31/38 , H01J29/45 , H01J29/86 , H01J29/88 , H01L27/146 , H01L31/024 , H01L31/0272 , H01L31/0392 , H01L31/09
CPC分类号： H01L31/0392 , H01J29/45 , H01L31/024 , H01L31/0272 , H01L31/09 , Y02E10/50
摘要： A photoconductive device having a transparent substrate, a transparent conductive film, a photoconductive film and a layer of an insulator provided on at least part of the substrate and of high thermal conductivity, and a method of operating the photoconductive device. Thus, especially, the temperature of a photoconductive film of an imaging device typical of an image pick-up tube or the photoconductive device which may be a one- or a two-dimensional image sensor or a photocell can be controlled precisely and efficiently.

16. 发明授权

US4883562A Method of making a photosensor 失效
标题翻译：制作光电传感器的方法
公开(公告)号：US4883562A
公开(公告)日：1989-11-28
申请号：US301467
申请日：1989-01-26
申请人： Hirofumi Ogawa , Kenji Sameshima , Tadaaki Hirai , Takaaki Unnai , Masanao Yamamoto , Keiichi Shidara , Junichi Yamazaki , Eikiyu Hiruma , Shirou Suzuki
发明人： Hirofumi Ogawa , Kenji Sameshima , Tadaaki Hirai , Takaaki Unnai , Masanao Yamamoto , Keiichi Shidara , Junichi Yamazaki , Eikiyu Hiruma , Shirou Suzuki
IPC分类号： H01J9/233 , H01J29/45 , H01L27/146 , H01L31/0248 , H01L31/0272 , H01L31/09 , H01L31/10 , H01L31/18 , H01L31/20
CPC分类号： H01L31/20 , H01J9/233 , H01L31/0272 , H01L31/095 , H01L31/1884 , Y02E10/50
摘要： A method of making an image pickup tube target (FIG. 1A), etc., using an amorphous photoconductive layer. When an electrode, an amorphous semiconductor layer, etc., are provided on a substrate, the steps of ion etching away a surface of the substrate and forming the electrode are performed so that a target (FIG. 1A) is produced in which no defects are substantially caused in a reproduced image even if a high electric field is applied across the target.
摘要翻译：使用非晶质光电导层制造图像拾取管靶（图1A）等的方法。当在基板上设置电极，非晶半导体层等时，进行离子蚀刻离开基板的表面并形成电极的步骤，使得产生不产生缺陷的目标（图1A）即使在目标上施加高电场，也在再现图像中基本上引起。

17. 发明授权

US4563611A Image pick-up tube target 失效
标题翻译：图像拾取管目标
公开(公告)号：US4563611A
公开(公告)日：1986-01-07
申请号：US548022
申请日：1983-11-02
申请人： Yasuhiko Nonaka , Eisuke Inoue , Keiichi Shidara , Kenkichi Tanioka
发明人： Yasuhiko Nonaka , Eisuke Inoue , Keiichi Shidara , Kenkichi Tanioka
IPC分类号： H01J29/45 , H01L31/08 , H01J31/26
CPC分类号： H01J29/456
摘要： A photoconductive image pick-up tube target comprises a transparent substrate, an N-type conductive film formed on the transparent substrate, and a P-type photoconductive film in rectifying contact with the N-type conductive film and containing Se, As and Te as sensitizer. The P-type photoconductive film includes a first layer contiguous to the N-type conductive film and containing 94.+-.1% by weight of Se and 6.+-.0.5% by weight of As, a second layer formed on the first layer and containing 64.+-.4% by weight of Se, 3.+-.0.5% by weight of As, and 33.+-.2% by weight of Te, a third layer formed on the second layer and containing Se and As, and a fluoride doped region extending over the first layer and a front half layer of the second layer and having a fluoride concentration of 0.1 to 3.0% by weight. The third layer has an As concentration which has a peak of 28.+-.1% by weight at a site contiguous to a rear half layer of the second layer and reduces gradually.
摘要翻译：感光图像拾取管目标包括透明基板，形成在透明基板上的N型导电膜和与N型导电膜整流接触的P型光电导膜，并且包含Se，As和Te作为敏化剂。 P型光电导膜包括与N型导电膜邻接的第一层，含有94 +/- 1重量％的Se和6 +/- 0.5重量％的As，形成在第一层上的第二层并且含有64 +/- 4重量％的Se，3 +/- 0.5重量％的As和33 +/- 2重量％的Te，第三层形成在第二层上并含有Se和As，以及在所述第一层上延伸的氟化物掺杂区域和所述第二层的前半层，并且氟化物浓度为0.1〜3.0重量％。第三层的As浓度在与第二层的后半层相邻的位置具有28 +/- 1重量％的峰值，并且逐渐降低。

18. 发明授权

US4007473A Target structures for use in photoconductive image pickup tubes and method of manufacturing the same 失效
标题翻译：用于光导图像拾取管的目标结构及其制造方法
公开(公告)号：US4007473A
公开(公告)日：1977-02-08
申请号：US580539
申请日：1975-05-23
申请人： Yasuhiko Nonaka , Tadaaki Hirai , Naohiro Goto , Keiichi Shidara
发明人： Yasuhiko Nonaka , Tadaaki Hirai , Naohiro Goto , Keiichi Shidara
IPC分类号： H01J9/233 , H01J29/45 , H01L31/08 , H01L27/14
CPC分类号： H01J29/456 , Y10S148/063 , Y10S148/072 , Y10S148/12 , Y10S148/15
摘要： In a target structure for use in a photoconductive image pickup tube, a P-type photoconductive film is deposited on an N-type transparent conductive film which is deposited on a transparent substrate. The P-type photosensitive film comprises first and second photoconductive substances. The commencement of the deposition of the first photoconductive substance is delayed a predetermined time from that of the second photoconductive substance thereby forming a film of the first photoconductive substance which is not contiguous to the junction surface between the N-type transparent conductive film and the P-type photoconductive film.
摘要翻译：在用于光电导图像拾取管的目标结构中，P型光电导膜沉积在沉积在透明衬底上的N型透明导电膜上。 P型感光膜包含第一和第二光电导物质。开始第一光电导物质的沉积比第二光电导物质的延迟预定时间，从而形成第一光电导物质的膜，其不与N型透明导电膜和P型结合面之间的接合面邻接型感光膜。

19. 发明授权

US4717854A Image pick-up tube target 失效
标题翻译：图像拾取管目标
公开(公告)号：US4717854A
公开(公告)日：1988-01-05
申请号：US830714
申请日：1986-02-19
申请人： Masanao Yamamoto , Eisuke Inoue , Keiichi Shidara , Eikyuu Hiruma
发明人： Masanao Yamamoto , Eisuke Inoue , Keiichi Shidara , Eikyuu Hiruma
IPC分类号： H01J29/45 , H01J31/26 , H01J31/38
CPC分类号： H01J29/456
摘要： An image pick-up tube target comprising an N-type conductive film formed on a transparent substrate, and P-type photoconductive film in rectifying contact with the N-type conductive film and comprising a first layer containing As, fluoride and Se, a second layer containing As, Te and Se, a portion of said second layer containing fluoride, a third layer containing As and Se, the composition of the third layer being different along the direction of thickness thereof, a fourth layer containing As and Se, wherein the concentration of As in the second layer varies continuously along the direction of thickness thereof, and in the second layer the minimum As concentration is located on the first layer side of the second layer and the maximum As concentration is located on the third layer side of the second layer.
摘要翻译：包括形成在透明基板上的N型导电膜的图像拾取管目标和与N型导电膜整流接触的P型光电导膜，并且包括含有As，氟化物和Se的第一层，第二层含有As，Te和Se的层，含有氟化物的第二层的一部分，含有As和Se的第三层，第三层的组成沿其厚度方向不同，含有As和Se的第四层，其中第二层中的As浓度沿其厚度方向连续变化，在第二层中，最小As浓度位于第二层的第一层侧，最大As浓度位于第二层的第三层侧第二层。

20. 发明授权

US4307319A Semiconductor layer of oxygen depletion type cerium oxide or lead oxide 失效
标题翻译：半导体层的氧耗尽型氧化铈或氧化铅
公开(公告)号：US4307319A
公开(公告)日：1981-12-22
申请号：US921948
申请日：1978-07-05
申请人： Motoyasu Terao , Tadaaki Hirai , Eiichi Maruyama , Hideaki Yamamoto , Tsutomu Fujita , Naohiro Goto , Keiichi Shidara
发明人： Motoyasu Terao , Tadaaki Hirai , Eiichi Maruyama , Hideaki Yamamoto , Tsutomu Fujita , Naohiro Goto , Keiichi Shidara
IPC分类号： H01J29/45 , H01L31/08
CPC分类号： H01J29/451
摘要： A photoelectric device comprises a signal electrode, a layer of amorphous photoconductor containing 50 atomic percent or more of selenium and an N-type semiconductor layer made of a material selected from the group consisting of oxygen depletion type cerium oxide and oxygen depletion type lead oxide and disposed therebetween, which has a thickness greater than 8 nm and up to and including 500 nm and a Fermi level located within an energy range of 0.2 to 0.8 eV from the bottom of a conduction band.
摘要翻译：光电装置包括信号电极，含有50原子％以上的硒的非晶质感光体层和由选自氧耗尽型氧化铈和氧耗尽型氧化铅的材料制成的N型半导体层，以及其间具有大于8nm的厚度并且包括500nm的厚度以及从导带的底部位于0.2至0.8eV的能量范围内的费米能级。

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