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11. 发明授权

US08580094B2 Magnetron design for RF/DC physical vapor deposition 有权
标题翻译：用于RF / DC物理气相沉积的磁控管设计
公开(公告)号：US08580094B2
公开(公告)日：2013-11-12
申请号：US13163817
申请日：2011-06-20
申请人： Rongjun Wang , Sally Lou , Muhammad Rasheed , Jianxin Lei , Xianmin Tang , Srinivas Gandikota , Ryan Hanson , Tza-Jing Gung , Keith A. Miller , Thanh X. Nguyen
发明人： Rongjun Wang , Sally Lou , Muhammad Rasheed , Jianxin Lei , Xianmin Tang , Srinivas Gandikota , Ryan Hanson , Tza-Jing Gung , Keith A. Miller , Thanh X. Nguyen
IPC分类号： C23C14/35
CPC分类号： C23C14/35 , H01J37/3408 , H01J37/345 , H01J37/3461
摘要： Methods and apparatus to improve target life and deposition uniformity in PVD chambers are provided herein. In some embodiments, a magnetron assembly includes a shunt plate having a central axis, the shunt plate rotatable about the central axis, a first open loop magnetic pole arc coupled to the shunt plate at a first radius from the central axis, and a second open loop magnetic pole arc coupled the shunt plate at a first distance from the first open loop magnetic pole arc, wherein at least one of the first radius varies along the first open loop magnetic pole arc or the first distance varies along the second open loop magnetic pole arc. In some embodiments, a first polarity of the first open loop magnetic pole arc opposes a second polarity of the second open loop magnetic pole arc.
摘要翻译：本文提供了改善PVD室中的目标寿命和沉积均匀性的方法和装置。在一些实施例中，磁控管组件包括具有中心轴线的分流板，分流板可围绕中心轴线旋转，第一开环磁极电弧在与中心轴线成第一半径处耦合到分流板，第二开路环形磁极以与第一开环磁极弧成第一距离的方式将分流板电弧耦合，其中第一半径中的至少一个沿第一开环磁极弧变化，或者第一距离沿第二开环磁极变化弧。在一些实施例中，第一开环磁极的第一极性与第二开环磁极的第二极性相反。

12. 发明申请

US20130157460A1 METHODS FOR ANNEALING A METAL CONTACT LAYER TO FORM A METAL SILICIDATION LAYER 有权
标题翻译：用于退火金属接触层以形成金属硅酸盐层的方法
公开(公告)号：US20130157460A1
公开(公告)日：2013-06-20
申请号：US13714588
申请日：2012-12-14
申请人： Xinyu Fu , Wei Tang , Kavita Shah , Srinivas Gandikota , San H. Yu , Avgerinos Gelatos
发明人： Xinyu Fu , Wei Tang , Kavita Shah , Srinivas Gandikota , San H. Yu , Avgerinos Gelatos
IPC分类号： H01L29/40
CPC分类号： H01L29/401 , H01L21/28052
摘要： Methods for annealing a contact metal layer for a metal silicidation process are provided in the present invention. In one embodiment, a method for annealing a contact metal layer for a silicidation process in a semiconductor device includes providing a substrate having a contact metal layer disposed thereon in a thermal annealing processing chamber, providing a heat energy to the contact metal layer in the thermal processing chamber, supplying a gas mixture including a nitrogen gas and a hydrogen gas while providing the heat energy to the contact layer in the thermal processing chamber, wherein the nitrogen gas and the hydrogen gas is supplied at a ratio between about 1:10 and about 1:1, and forming a metal silicide layer on the substrate.
摘要翻译：在本发明中提供了用于退火金属硅化工艺的接触金属层的方法。在一个实施例中，一种用于对半导体器件中的硅化工艺的接触金属层进行退火的方法包括：在热退火处理室中提供其上设置有接触金属层的基板，在该热退火处理室中向该接触金属层提供热能处理室，供给包括氮气和氢气的气体混合物，同时向热处理室中的接触层提供热能，其中氮气和氢气以约1:10和约 1：1，并在衬底上形成金属硅化物层。

13. 发明授权

US06905622B2 Electroless deposition method 有权
公开(公告)号：US06905622B2
公开(公告)日：2005-06-14
申请号：US10117712
申请日：2002-04-03
申请人： Deenesh Padhi , Joseph Yahalom , Sivakami Ramanathan , Chris R. McGuirk , Srinivas Gandikota , Girish Dixit
发明人： Deenesh Padhi , Joseph Yahalom , Sivakami Ramanathan , Chris R. McGuirk , Srinivas Gandikota , Girish Dixit
IPC分类号： C23C18/16 , H01L21/02 , H01L21/285 , H01L21/288 , H01L21/306 , H01L21/321 , H01L21/768 , B44C1/22 , B05D3/04 , B05D3/10
CPC分类号： H01L21/02074 , C23C18/1694 , C23C18/1831 , C23C18/1834 , C23C18/1851 , C23C18/1879 , C23C18/1882 , C23C18/1893 , C23C18/31 , C23C18/34 , C23C18/36 , C23C18/50 , H01L21/02068 , H01L21/28518 , H01L21/288 , H01L21/76843 , H01L21/76849 , H01L21/76874 , H01L2221/1089
摘要： Methods and apparatus are provided for forming a metal or metal silicide layer by an electroless deposition technique. In one aspect, a method is provided for processing a substrate including depositing an initiation layer on a substrate surface, cleaning the substrate surface, and depositing a conductive material on the initiation layer by exposing the initiation layer to an electroless solution. The method may further comprise etching the substrate surface with an acidic solution and cleaning the substrate of the acidic solution prior to depositing the initiation layer. The initiation layer may be formed by exposing the substrate surface to a noble metal electroless solution or a borane-containing solution. The conductive material may be deposited with a borane-containing reducing agent. The conductive material may be used as a passivation layer, a barrier layer, a seed layer, or for use in forming a metal silicide layer.

14. 发明授权

US06899816B2 Electroless deposition method 有权
标题翻译：无电沉积法
公开(公告)号：US06899816B2
公开(公告)日：2005-05-31
申请号：US10117711
申请日：2002-04-03
申请人： Deenesh Padhi , Joseph Yahalom , Sivakami Ramanathan , Chris R. McGuirk , Srinivas Gandikota , Girish Dixit
发明人： Deenesh Padhi , Joseph Yahalom , Sivakami Ramanathan , Chris R. McGuirk , Srinivas Gandikota , Girish Dixit
IPC分类号： C23C18/18 , H01L21/285 , H01L21/288 , H01L21/336 , H01L21/768 , B44C1/22 , B05D3/04 , B05D3/10
CPC分类号： H01L21/76843 , C23C18/1651 , C23C18/1893 , H01L21/28518 , H01L21/288 , H01L21/76849 , H01L21/76874 , H01L29/665 , H01L2221/1089
摘要： Methods and apparatus are provided for forming a metal or metal silicide layer by an electroless deposition technique. In one aspect, a method is provided for processing a substrate including depositing an initiation layer on a substrate surface, cleaning the substrate surface, and depositing a conductive material on the initiation layer by exposing the initiation layer to an electroless solution. The method may further comprise etching the substrate surface with an acidic solution and cleaning the substrate of the acidic solution prior to depositing the initiation layer. The initiation layer may be formed by exposing the substrate surface to a noble metal electroless solution or a borane-containing solution. The conductive material may be deposited with a borane-containing reducing agent. The conductive material may be used as a passivation layer, a barrier layer, a seed layer, or for use in forming a metal silicide layer.
摘要翻译：提供了通过无电沉积技术形成金属或金属硅化物层的方法和装置。在一个方面，提供了一种用于处理衬底的方法，包括在衬底表面上沉积起始层，清洁衬底表面，以及通过将引发层暴露于无电镀溶液而在引发层上沉积导电材料。该方法可以进一步包括用酸性溶液蚀刻衬底表面并在沉积起始层之前清洁酸性溶液的衬底。起始层可以通过将基材表面暴露于贵金属化学电解溶液或含硼烷溶液来形成。导电材料可以用含硼烷的还原剂沉积。导电材料可以用作钝化层，阻挡层，种子层，或用于形成金属硅化物层。

15. 发明申请

US20130115383A1 DEPOSITION OF METAL FILMS USING ALANE-BASED PRECURSORS 有权
标题翻译：金属膜的沉积使用基于ALANE的前驱体
公开(公告)号：US20130115383A1
公开(公告)日：2013-05-09
申请号：US13669571
申请日：2012-11-06
申请人： Xinliang Lu , David Thompson , Jeffrey W. Anthis , Mei Chang , Seshadri Ganguli , Wei Tang , Srinivas Gandikota , Atif Noori
发明人： Xinliang Lu , David Thompson , Jeffrey W. Anthis , Mei Chang , Seshadri Ganguli , Wei Tang , Srinivas Gandikota , Atif Noori
IPC分类号： C23C16/455
CPC分类号： C23C16/455 , C23C16/06 , C23C16/45525 , H01L21/28562 , H01L21/76841
摘要： Provided are methods of depositing pure metal and aluminum alloy metal films. Certain methods comprises contacting a substrate surface with first and second precursors, the first precursor comprising an aluminum precursor selected from dimethylaluminum hydride, alane coordinated to an amine, and a compound having a structure represented by: wherein R is a C1-C6 alkyl group, and the second precursor comprising a metal halide. Other methods relate to sequentially exposing a substrate to a first and second precursor, the first precursor comprising an aluminum precursor as described above, and the second precursor comprising Ti(NR′2)4 or Ta(NR′2)5, wherein R′ is an alkyl, alkenyl, alkynyl, keto or aldehyde group.
摘要翻译：提供沉积纯金属和铝合金金属膜的方法。某些方法包括使基材表面与第一和第二前体接触，第一前体包含选自二甲基氢化铝，与胺配位的烷烃的铝前驱物和具有下列结构的化合物：其中R是C1-C6烷基，并且第二前体包含金属卤化物。其它方法涉及将衬底顺序地暴露于第一和第二前体，第一前体包含如上所述的铝前体，第二前体包含Ti（NR'2）4或Ta（NR'2）5，其中R' 是烷基，烯基，炔基，酮基或醛基。

16. 发明申请

US20100330795A1 Krypton Sputtering of Low Resistivity Tungsten 有权
标题翻译：氪气溅射低电阻钨
公开(公告)号：US20100330795A1
公开(公告)日：2010-12-30
申请号：US12872522
申请日：2010-08-31
申请人： Wei D. Wang , Srinivas Gandikota , Kishore Lavu
发明人： Wei D. Wang , Srinivas Gandikota , Kishore Lavu
IPC分类号： H01L21/283 , H01L21/768
CPC分类号： C23C14/16 , C23C14/0641 , H01L21/28061 , H01L29/4941
摘要： A method of depositing a bilayer of tungsten over tungsten nitride by a plasma sputtering process in which krypton is used as the sputter working gas during the tungsten deposition. Argon may be used as the sputtering working gas during the reactive sputtering deposition of tungsten nitride. The beneficial effect of reduction of tungsten resistivity is increased when the thickness of the tungsten layer is less than 50 nm and further increased when less than 35 nm. The method may be used in forming a gate stack including a polysilicon layer over a gate oxide layer over a silicon gate region of a MOS transistor in which the tungsten nitride acts as a barrier. A plasma sputter chamber in which the invention may be practiced includes gas sources of krypton, argon, and nitrogen.
摘要翻译：通过等离子体溅射工艺在钨沉积中使用氪作为溅射工作气体的钨沉积钨层的方法。在氮化钨的反应溅射沉积期间，可以使用氩作为溅射工作气体。当钨层的厚度小于50nm时，降低钨电阻率的有益效果增加，当小于35nm时，钨电阻率的降低进一步增加。该方法可以用于在MOS晶体管的硅栅极区域上的栅极氧化物层上形成包括多晶硅层的栅极堆叠，其中氮化钨作为势垒。可以实施本发明的等离子体溅射室包括氪气，氩气和氮气的气源。

17. 发明申请

US20090053882A1 KRYPTON SPUTTERING OF THIN TUNGSTEN LAYER FOR INTEGRATED CIRCUITS 有权
标题翻译：用于集成电路的薄膜溅射的KRYPTON溅射
公开(公告)号：US20090053882A1
公开(公告)日：2009-02-26
申请号：US11841205
申请日：2007-08-20
申请人： WEI D. WANG , Srinivas Gandikota , Kishore Lavu
发明人： WEI D. WANG , Srinivas Gandikota , Kishore Lavu
IPC分类号： H01L21/3205 , C23C16/00
CPC分类号： C23C14/16 , C23C14/0641 , H01L21/28061 , H01L29/4941
摘要： A method of depositing a bilayer of tungsten over tungsten nitride by a plasma sputtering process in which krypton is used as the sputter working gas during the tungsten deposition. Argon may be used as the sputtering working gas during the reactive sputtering deposition of tungsten nitride. The beneficial effect of reduction of tungsten resistivity is increased when the thickness of the tungsten layer is less than 50 nm and further increased when less than 35 nm. The method may be used in forming a gate stack including a polysilicon layer over a gate oxide layer over a silicon gate region of a MOS transistor in which the tungsten nitride acts as a barrier. A plasma sputter chamber in which the invention may be practiced includes gas sources of krypton, argon, and nitrogen.
摘要翻译：通过等离子体溅射工艺在钨沉积中使用氪作为溅射工作气体的钨沉积钨层的方法。在氮化钨的反应溅射沉积期间，可以使用氩作为溅射工作气体。当钨层的厚度小于50nm时，降低钨电阻率的有益效果增加，当小于35nm时，钨电阻率的降低进一步增加。该方法可以用于在MOS晶体管的硅栅极区域上的栅极氧化物层上形成包括多晶硅层的栅极堆叠，其中氮化钨作为势垒。可以实施本发明的等离子体溅射室包括氪气，氩气和氮气的气源。

18. 发明授权

US06824666B2 Electroless deposition method over sub-micron apertures 有权
标题翻译：亚微米孔径上的无电沉积方法
公开(公告)号：US06824666B2
公开(公告)日：2004-11-30
申请号：US10059822
申请日：2002-01-28
申请人： Srinivas Gandikota , Chris R. McGuirk , Deenesh Padhi , Muhammad Atif Malik , Sivakami Ramanathan , Girish A. Dixit , Robin Cheung
发明人： Srinivas Gandikota , Chris R. McGuirk , Deenesh Padhi , Muhammad Atif Malik , Sivakami Ramanathan , Girish A. Dixit , Robin Cheung
IPC分类号： C23C2800
CPC分类号： H01L21/76843 , C23C18/1651 , C23C18/1653 , C23C18/1696 , C23C18/1831 , C23C18/28 , C23C18/30 , C23C18/38 , H01L21/288 , H01L21/2885 , H01L21/6708 , H01L21/76864 , H01L21/76868 , H01L21/76871 , H01L21/76874 , H01L21/76877 , H01L2221/1089 , Y10S428/936
摘要： An apparatus and a method of depositing a catalytic layer comprising at least one metal selected from the group consisting of noble metals, semi-noble metals, alloys thereof, and combinations thereof in sub-micron features formed on a substrate. Examples of noble metals include palladium and platinum. Examples of semi-noble metals include cobalt, nickel, and tungsten. The catalytic layer may be deposited by electroless deposition, electroplating, or chemical vapor deposition. In one embodiment, the catalytic layer may be deposited in the feature to act as a barrier layer to a subsequently deposited conductive material. In another embodiment, the catalytic layer may be deposited over a barrier layer. In yet another embodiment, the catalytic layer may be deposited over a seed layer deposited over the barrier layer to act as a “patch” of any discontinuities in the seed layer. Once the catalytic layer has been deposited, a conductive material, such as copper, may be deposited over the catalytic layer. In one embodiment, the conductive material is deposited over the catalytic layer by electroless deposition. In another embodiment, the conductive material is deposited over the catalytic layer by electroless deposition followed by electroplating or followed by chemical vapor deposition. In still another embodiment, the conductive material is deposited over the catalytic layer by electroplating or by chemical vapor deposition.
摘要翻译：一种沉积包含至少一种选自贵金属，半贵金属，其合金及其组合的金属的催化剂层的装置和方法，其形成在基板上形成的亚微米特征。贵金属的实例包括钯和铂。半贵金属的实例包括钴，镍和钨。可通过无电沉积，电镀或化学气相沉积来沉积催化层。在一个实施方案中，催化层可以沉积在特征中以用作随后沉积的导电材料的阻挡层。在另一个实施方案中，催化剂层可以沉积在阻挡层上。在另一个实施方案中，催化层可以沉积在沉积在阻挡层上的种子层上，以充当种子层中任何不连续性的“贴片”。一旦沉积了催化层，可以在催化剂层上沉积诸如铜的导电材料。在一个实施例中，导电材料通过无电沉积沉积在催化剂层上。在另一个实施方案中，导电材料通过无电沉积然后电镀或随后进行化学气相沉积沉积在催化剂层上。在另一个实施例中，导电材料通过电镀或化学气相沉积沉积在催化层上。

19. 发明授权

US06797620B2 Method and apparatus for improved electroplating fill of an aperture 失效
标题翻译：用于改善孔的电镀填充物的方法和装置
公开(公告)号：US06797620B2
公开(公告)日：2004-09-28
申请号：US10124095
申请日：2002-04-16
申请人： John S. Lewis , Srinivas Gandikota , Sivakami Ramanathan , Girish Dixit , Robin Cheung , Fusen Chen
发明人： John S. Lewis , Srinivas Gandikota , Sivakami Ramanathan , Girish Dixit , Robin Cheung , Fusen Chen
IPC分类号： H01L2144
CPC分类号： H01L21/2855 , H01L21/76879
摘要： A method and apparatus is provided for filling apertures formed in a substrate surface by depositing materials that selectively inhibit or limit the formation or growth of subsequent layers used to fill an aperture. In one aspect, a method is provided for processing a substrate including providing a substrate having a field and apertures formed therein, wherein the apertures each have a bottom and sidewalls, depositing a seed layer on the bottom and sidewalls of the apertures, depositing a growth-inhibiting layer on at least one of the field of the substrate or an upper portion of the sidewalls of the apertures, and depositing a conductive layer on the growth-inhibiting layer and the seed layer. Deposition of the growth-inhibiting layer improves fill of the aperture from the bottom of the aperture up to the field of the substrate.
摘要翻译：提供了一种方法和装置，用于通过沉积选择性地抑制或限制用于填充孔的后续层的形成或生长的材料来填充形成在衬底表面中的孔。在一个方面，提供了一种用于处理衬底的方法，包括提供具有形成在其中的场和孔的衬底，其中每个孔具有底部和侧壁，在孔的底部和侧壁上沉积种子层，沉积生长在衬底的场中的至少一个或孔的侧壁的上部中的至少一个上的抑制层，并且在生长抑制层和种子层上沉积导电层。生长抑制层的沉积改善了孔的填充，从孔的底部到基底的场。

20. 发明授权

US06627542B1 Continuous, non-agglomerated adhesion of a seed layer to a barrier layer 有权
标题翻译：种子层与阻挡层的连续的非团聚粘附
公开(公告)号：US06627542B1
公开(公告)日：2003-09-30
申请号：US09604858
申请日：2000-06-27
申请人： Srinivas Gandikota , Rong Tao , Liang-Yuh Chen , Seshadri Ramaswami
发明人： Srinivas Gandikota , Rong Tao , Liang-Yuh Chen , Seshadri Ramaswami
IPC分类号： H01L2144
CPC分类号： H01L21/76868 , H01L21/76843 , H01L21/76846 , H01L21/76873 , H01L21/76877 , H01L2221/1089
摘要： A method and apparatus is provided for improving adherence of metal seed layers to barrier layers in electrochemical deposition techniques. The method includes depositing an adhesion layer continuously or semi-continuously without agglomeration onto a barrier layer prior to depositing a seed layer by controlling the substrate temperature, the chamber pressure, and/or the power delivered to a deposition chamber. Deposition of the adhesion layer prevents layer delamination which leads to agglomeration of the deposited layers and formation of voids in the high aspect ratio features.
摘要翻译：提供了一种用于在电化学沉积技术中改善金属种子层对阻挡层的粘附性的方法和装置。该方法包括通过控制衬底温度，室压力和/或输送到沉积室的功率沉积种子层之前将粘附层连续地或半连续地沉积在阻挡层上。粘附层的沉积防止了层析层，导致沉积层的聚集和高纵横比特征形成空隙。

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